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152 条记录 (耗时 0.033 秒)

    METHODS TO OBTAIN LOW K DIELECTRIC BARRIER WITH SUPERIOR ETCH RESISTIVITY
    1.
    发明申请
    METHODS TO OBTAIN LOW K DIELECTRIC BARRIER WITH SUPERIOR ETCH RESISTIVITY 有权
    获得具有超级蚀刻电阻率的低K介电阻挡层的方法

    公开(公告)号：US20090093132A1

    公开(公告)日：2009-04-09

    申请号：US11869416

    申请日：2007-10-09

    申请人： HUIWEN XU ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

    发明人： HUIWEN XU ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02205 ,  C23C16/22 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/3185

    摘要： The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.

    摘要翻译： 本发明通常提供一种形成具有降低的介电常数，改进的蚀刻电阻率和良好的阻挡性能的介电阻挡层的方法。 一个实施例提供了一种用于处理半导体衬底的方法，包括将前体流入处理室，其中前体包含硅 - 碳键和碳 - 碳键，并在处理室中产生前体的低密度等离子体以形成电介质 在半导体衬底上具有碳 - 碳键的阻挡膜，其中前体中的至少一部分碳 - 碳键保存在低密度等离子体中并且并入介电阻挡膜中。

    Methods to obtain low k dielectric barrier with superior etch resistivity
    2.
    发明授权
    Methods to obtain low k dielectric barrier with superior etch resistivity 有权
    获得具有优异蚀刻电阻率的低k电介质阻挡层的方法

    公开(公告)号：US07964442B2

    公开(公告)日：2011-06-21

    申请号：US11869416

    申请日：2007-10-09

    申请人： Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Huiwen Xu ,  Yijun Liu ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H01L51/40

    CPC分类号： H01L21/02205 ,  C23C16/22 ,  C23C16/505 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/3185

    摘要： The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.

    摘要翻译： 本发明通常提供一种形成具有降低的介电常数，改进的蚀刻电阻率和良好的阻挡性能的介电阻挡层的方法。 一个实施例提供了一种用于处理半导体衬底的方法，包括将前体流入处理室，其中前体包含硅 - 碳键和碳 - 碳键，并在处理室中产生前体的低密度等离子体以形成电介质 在半导体衬底上具有碳 - 碳键的阻挡膜，其中前体中的至少一部分碳 - 碳键保存在低密度等离子体中并且并入介电阻挡膜中。

    In-situ oxide capping after CVD low k deposition
    4.
    发明授权
    In-situ oxide capping after CVD low k deposition 有权
    CVD低k沉积后的原位氧化物封盖

    公开(公告)号：US07112541B2

    公开(公告)日：2006-09-26

    申请号：US10840754

    申请日：2004-05-06

    申请人： Li-Qun Xia ,  Huiwen Xu ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Li-Qun Xia ,  Huiwen Xu ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76826 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

    摘要： A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.

    摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在室内存在RF功率的情况下，从包含有机硅化合物和氧化气体的气体混合物中沉积低介电常数膜。 在低介电常数薄膜以低于在低介电常数膜上沉积富含氧化物的盖子的流速下沉积后，室内继续进行RF功率和有机硅化合物和氧化气体的流动。

    Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
    6.
    发明授权
    Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure 有权
    使用氮等离子体原位处理和非原位UV固化来增加氮化硅拉伸应力的方法

    公开(公告)号：US08138104B2

    公开(公告)日：2012-03-20

    申请号：US11762590

    申请日：2007-06-13

    申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    IPC分类号： H01L21/469

    CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

    摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

    摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

    Method of depositing boron nitride and boron nitride-derived materials
    9.
    发明授权
    Method of depositing boron nitride and boron nitride-derived materials 有权
    沉积氮化硼和氮化硼衍生材料的方法

    公开(公告)号：US08084105B2

    公开(公告)日：2011-12-27

    申请号：US11765257

    申请日：2007-06-19

    申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H05H1/24

    CPC分类号： C23C16/342 ,  C23C16/45523

    摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

    摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。