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公开(公告)号：US4940863A
公开(公告)日：1990-07-10
申请号：US356354
申请日：1989-05-25
申请人： Hajime Fujita , Seishi Chiba , Tsutomu Okutomi , Kazuo Suzuki , Masami Idehara , Mitsutaka Honma , Seikichi Takashima
发明人： Hajime Fujita , Seishi Chiba , Tsutomu Okutomi , Kazuo Suzuki , Masami Idehara , Mitsutaka Honma , Seikichi Takashima
CPC分类号： H01H11/041 , H01H1/0203
摘要： A vacuum breaker contact produced according to the coating step of forming a metal coated layer comprising at least one metal selected from the group consisting of Cu, Ag, Ni, Sn, In, Fe and alloys thereof on at least a part of the surface of the contact substrate having a predetermined shape to a thickness of 10 .mu.m or less, and the diffusion step of having a part of said metal coated layer diffused into said contact substrate.
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公开(公告)号：US5109145A
公开(公告)日：1992-04-28
申请号：US356354
申请日：1989-05-25
申请人： Hajime Fujita , Seishi Chiba , Tsutomu Okutomi , Kazuo Suzuki , Masami Idehara , Mitsutaka Honma , Seikichi Takashima
发明人： Hajime Fujita , Seishi Chiba , Tsutomu Okutomi , Kazuo Suzuki , Masami Idehara , Mitsutaka Honma , Seikichi Takashima
CPC分类号： H01H11/041 , H01H1/0203
摘要： A vacuum breaker contact produced according to the coating step of forming a metal coated layer comprising at least one metal selected from the group consisting of Cu, Ag, Ni, Sn, In, Fe and alloys thereof on at least a part of the surface of the contact substrate having a predetermined shape to a thickness of 10 .mu.m or less, and the diffusion step of having a part of the metal coated layer diffused into the contact substrate.
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公开(公告)号：US5045281A
公开(公告)日：1991-09-03
申请号：US486259
申请日：1990-02-27
申请人： Tsutomu Okutomi , Mikio Okawa , Atsushi Yamamoto , Tsuneyo Seki , Yoshinari Satoh , Mitsutaka Honma , Seishi Chiba , Tadaaki Sekiguchi
发明人： Tsutomu Okutomi , Mikio Okawa , Atsushi Yamamoto , Tsuneyo Seki , Yoshinari Satoh , Mitsutaka Honma , Seishi Chiba , Tadaaki Sekiguchi
IPC分类号： C22C5/08 , C22C1/04 , C22C14/00 , C22C16/00 , C22C27/02 , C22C27/04 , C22C27/06 , C22C29/08 , C22C29/14 , H01H1/02 , H01H1/0233 , H01H33/66
CPC分类号： H01H1/0203 , H01H1/0233
摘要： A contact forming material for a vacuum interrupter comprising: from 25% to 65% by weight of a highly conductive component comprising Ag and Cu, and from 35% to 75% by weight of an arc-proof component selected from the group consisting of Ti, V, Cr, Zr, Mo, W and their carbides and borides, and mixtures thereof wherein the highly conductive component of the contact forming material comprises (i) a first highly conductive component region composed of a first discontinuous phase having a thickness or width of no more than 5 micrometers and a first matrix surrounding the first discontinuous phase, and (ii) a second highly conductive component region composed of a second discontinuous phase having a thickness or width of at least 5 micrometers and a second matrix surrounding the second discontinuous phase, wherein the first discontinuous phase in the first highly conductive component region is finely and uniformly dispersed in the first matrix at intervals of no more than 5 micrometers, and wherein the amount of the second highly conductive component region based on the total highly conductive component is within the range of from 10% to 60% by weight.
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公开(公告)号：US5149362A
公开(公告)日：1992-09-22
申请号：US386264
申请日：1989-07-28
申请人： Tsutomu Okutomi , Atsushi Yamamoto , Seishi Chiba , Tsuneyo Seki , Mikio Okawa , Mitsutaka Honma , Kiyofumi Otobe , Yoshinari Satoh , Tadaaki Sekiguchi
发明人： Tsutomu Okutomi , Atsushi Yamamoto , Seishi Chiba , Tsuneyo Seki , Mikio Okawa , Mitsutaka Honma , Kiyofumi Otobe , Yoshinari Satoh , Tadaaki Sekiguchi
IPC分类号： H01H33/66 , H01H1/02 , H01H1/0233
CPC分类号： H01H1/0203 , H01H1/0233 , Y10T428/12049
摘要： An Ag-Cu-WC contact forming material for a vacuum interrupter comprising a highly conductive component comprising Ag and Cu and an arc-proof component comprising WC wherein the content of the highly conductive component is such that the total amount of Ag and Cu(Ag+Cu) is from 25% to 65% by weight and the percentage of Ag based on the total amount of Ag and Cu[Ag/(Ag+Cu)] is from 40% to 80% by weight; wherein the content of the arc-proof component is from 35% to 75% by weight; wherein the structure of the highly conductive component comprises a matrix and a discontinuous phase, the discontinuous phase having a thickness or width of no more than 5 micrometers and wherein said arc-proof component comprises a discontinuous grain having a grain size of no more than 1 micrometer.
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公开(公告)号：US4830821A
公开(公告)日：1989-05-16
申请号：US224401
申请日：1988-07-26
申请人： Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
发明人： Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
CPC分类号： C22C1/0475 , H01H1/0206
摘要： A contact forming material for a vacuum valve or vacuum circuit breaker comprising (a) a conductive material consisting of copper and/or silver, and (b) an arc-proof material consisting of chromium, titanium, zirconium, or an alloy thereof wherein the amount of said arc-proof material present in said conductive material matrix is no more than 0.35% by weight. This contact forming material is produced by a process which comprises the steps of compacting arc-proof material powder into a green compact, sintering said green compact to obtain a skeleton of the arc-proof material, infiltrating the voids of said skeleton with a conductive material, and cooling the infiltrated material. The contact forming material can provide contacts for a vacuum valve or vacuum circuit breaker which has excellent characteristics such as temperature rise characteristic and contact resistance characteristic.
摘要翻译： 一种用于真空阀或真空断路器的接触形成材料，包括（a）由铜和/或银组成的导电材料，和（b）由铬，钛，锆或其合金组成的防弧材料，其中 存在于所述导电材料基体中的所述防弧材料的量不大于0.35重量％。 该接触形成材料通过以下步骤制造，该方法包括以下步骤：将抗电弧材料粉末压实成生坯，烧结所述生坯以获得防弧材料的骨架，用导电材料渗透所述骨架的空隙 ，并冷却渗透的材料。 接触形成材料可以提供具有诸如温度上升特性和接触电阻特性等优异特性的真空阀或真空断路器的触头。
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公开(公告)号：US4777335A
公开(公告)日：1988-10-11
申请号：US4904
申请日：1987-01-20
申请人： Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
发明人： Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
CPC分类号： C22C1/0475 , H01H1/0206
摘要： A contact forming material for a vacuum valve or vacuum circuit breaker comprising (a) a conductive material consisting of copper and/or silver, and (b) an arc-proof material consisting of chromium, titanium, zirconium, or an alloy thereof wherein the amount of said arc-proof material present in said conductive material matrix is no more than 0.35% by weight. This contact forming material is produced by a process which comprises the steps of compacting arc-proof material powder into a green compact, sintering said green compact to obtain a skeleton of the arc-proof material, infiltrating the voids of said skeleton with a conductive material, and cooling the infiltrated material. The contact forming material can provide contacts for a vacuum valve or vacuum circuit breaker which has excellent characteristics such as temperature rise characteristic and contact resistance characteristic.
摘要翻译： 一种用于真空阀或真空断路器的接触形成材料，包括（a）由铜和/或银组成的导电材料，和（b）由铬，钛，锆或其合金组成的防弧材料，其中 存在于所述导电材料基体中的所述防弧材料的量不大于0.35重量％。 该接触形成材料通过以下步骤制造，该方法包括以下步骤：将抗电弧材料粉末压实成生坯，烧结所述生坯以获得防弧材料的骨架，用导电材料渗透所述骨架的空隙 ，并冷却渗透的材料。 接触形成材料可以提供具有诸如温度上升特性和接触电阻特性等优异特性的真空阀或真空断路器的触头。
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公开(公告)号：US4129761A
公开(公告)日：1978-12-12
申请号：US801218
申请日：1977-05-27
CPC分类号： H01H1/0203
摘要： A vacuum circuit breaker comprising an evacuated envelope and a pair of movable conductive rods within the envelope having points of contact equipped with contact members, wherein the conductive rods slide into and out of engaging contact, the improvement comprising at least one of said contacts having circuit making and breaking contact members formed of an alloy consisting essentially of 9.4 wt% to 15 wt% Al, 4.5 wt% to 20 wt% Ni, 0.1 wt% to 10 wt% of at least one metal (Me) selected from the group consisting of bismuth, tellurium, selenium, antimony and magnesium with copper as the balance of the alloy, wherein said alloy contains an .alpha. copper phase (Cu(.alpha.)) containing nickel and a .gamma. copper phase (Cu(.gamma.)) containing nickel substantially dispersed throughout said alloy.
摘要翻译： 一种真空断路器，包括抽真空的外壳和位于外壳内的一对可移动的导电棒，其具有接触构件的接触点，其中导电棒滑入和离开接合触点，该改进包括至少一个所述触点具有电路 制造和断开由基本上由9.4重量％至15重量％的Al，4.5重量％至20重量％的Ni，0.1重量％至10重量％的至少一种选自以下的金属（Me）组成的合金形成的接触构件： 铋，碲，硒，锑和镁与铜作为合金的余量，其中所述合金含有含镍的α铜相（Cu（α））和含有镍的γ铜相（Cu（γ）），其基本上分散 贯穿所有合金。
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公开(公告)号：US4129760A
公开(公告)日：1978-12-12
申请号：US801214
申请日：1977-05-27
申请人： Tsutomu Okutomi , Hisashi Yoshino , Seishi Chiba
发明人： Tsutomu Okutomi , Hisashi Yoshino , Seishi Chiba
CPC分类号： H01H1/0203
摘要： A vacuum circuit breaker comprising an evacuated envelope and a pair of movable conductive rods within the envelope having points of contact equipped with contact members, wherein the conductive rods slide into and out of engaging contact, the improvement comprising at least one of said contacts having circuit-making and breaking members formed of an alloy consisting essentially of 4 wt% to 9.4 wt% aluminum, 0.5 wt% to 3.5 wt% of beryllium, 0.1 wt% to 10 wt% of Me.sub.1, wherein Me.sub.1 is at least one metal selected from the group consisting of bismuth, tellurium, selenium, antimony, magnesium and lead, and the balance copper.
摘要翻译： 一种真空断路器，包括抽真空的外壳和位于外壳内的一对可移动的导电棒，其具有接触构件的接触点，其中导电棒滑入和离开接合触点，该改进包括至少一个所述触点具有电路 由基本上由4重量％至9.4重量％的铝，0.5重量％至3.5重量％的铍，0.1重量％至10重量％的Me 1组成的合金制成和断裂的构件，其中Me1是至少一种选自 由铋，碲，硒，锑，镁和铅组成的组，余量为铜。
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公开(公告)号：US5760469A
公开(公告)日：1998-06-02
申请号：US602421
申请日：1996-02-16
申请人： Yutaka Higashiguchi , Mitsuo Inagaki , Toshio Kumai , Ryoichi Ochiai , Yasuhiro Teshima , Mamoru Niishiro , Yasushi Kobayashi , Hideaki Tamura , Hiroshi Iimura , Seishi Chiba , Yukio Sekiya , Shuzo Igarashi , Yasuhiro Ichihara
发明人： Yutaka Higashiguchi , Mitsuo Inagaki , Toshio Kumai , Ryoichi Ochiai , Yasuhiro Teshima , Mamoru Niishiro , Yasushi Kobayashi , Hideaki Tamura , Hiroshi Iimura , Seishi Chiba , Yukio Sekiya , Shuzo Igarashi , Yasuhiro Ichihara
IPC分类号： H01L23/12 , H01L23/057 , H01L23/31 , H01L23/498 , H01L23/50 , H05K1/02 , H05K3/34 , H01L23/02 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H05K3/3436 , H01L23/057 , H01L23/3107 , H01L23/49816 , H01L2224/48091 , H01L2224/48227 , H01L24/48 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15153 , H01L2924/15159 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/1532 , H01L2924/16195 , H01L2924/181 , H05K1/0271 , H05K2201/068 , H05K2201/09036 , H05K2201/10477 , H05K2201/10568 , H05K2201/10666 , H05K3/3431 , Y02P70/613
摘要： A semiconductor device includes a package having opposing surfaces, a first terminal for an outer connection supported by said package and electronic components supported by said package, and the opposing surfaces of the package having slits so that a shape of the package can be changed in a mounted state. Therefore, stress applied to soldered junctions of the first and second terminals is decreased.
摘要翻译： 半导体器件包括具有相对表面的封装，用于由所述封装支撑的外部连接的第一端子和由所述封装支撑的电子部件，并且封装的相对表面具有狭缝，使得封装的形状可以在 安装状态。 因此，施加到第一端子和第二端子的焊接接头的应力减小。
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