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1.发明授权
公开(公告)号：US5473173A
公开(公告)日：1995-12-05
申请号：US245314
申请日：1994-05-18
IPC分类号： H01L21/20 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01S5/00 , H01S5/34 , H01S5/343 , H01L27/14 , H01L29/205 , H01L31/04
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/34 , H01S5/3403
摘要： A quantum well structure is provided which is capable of efficiently confining electrons and holes in a quantum well layer. The quantum well structure includes a first cladding layer, a second cladding layer, and a plurality of quantum well layers and one or more barrier layers each disposed between the first cladding layer and the second cladding layer. The quantum well layers and the barrier layers are laminated in an alternating manner. The quantum well layers include at least two selected from the group consisting of a layer having tensile strain, a layer having no strain, and a layer having compressive strain. The thickness of each of the quantum well layers is selected so that the energy difference in each of the quantum well layers between the ground quantum state of an electron at the conduction band and the ground quantum state of a hole at the valence band is substantially the same.
摘要翻译： 提供了能够有效地限制量子阱层中的电子和空穴的量子阱结构。 量子阱结构包括第一覆层，第二覆层和多个量子阱层以及一个或多个阻挡层，每个势垒层设置在第一覆层和第二覆层之间。 量子阱层和阻挡层以交替的方式层叠。 量子阱层包括选自具有拉伸应变的层，不具有应变的层和具有压应变的层的至少两个。 选择每个量子阱层的厚度，使得在导带处的电子的基准量子态与价带的空穴的基准量子态之间的每个量子阱层中的能量差基本上是 相同。
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公开(公告)号：US5571376A
公开(公告)日：1996-11-05
申请号：US404508
申请日：1995-03-15
IPC分类号： H01L29/06 , H01L21/335 , H01L29/12 , H01L29/66 , H01L31/10 , H01S5/00 , H01S5/34 , H01L21/31
CPC分类号： B82Y10/00 , H01L29/125 , H01L29/127 , H01L29/66469 , Y10S438/962
摘要： A quantum confined device is provided having raised portions formed on opposing walls of a groove, thereby defining a region of reduced width in the vicinity of the intersection of the walls. During fabrication, a "V" groove is formed in a substrate and then further masking and etching steps are performed on the walls of the groove to form the raised portions. Quantum confined devices can be formed within the groove by epitaxial deposition of semiconducting layers into the region of reduced width.
摘要翻译： 提供了一种量子限制装置，其具有形成在槽的相对壁上的凸起部分，从而限定了在壁的相交附近附近的宽度减小的区域。 在制造过程中，在衬底中形成“V”槽，然后在槽的壁上执行进一步的掩模和蚀刻步骤以形成凸起部分。 可以通过将半导体层外延沉积到减小宽度的区域中而在沟内形成量子限制的器件。
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3.发明授权III-nitride optoelectronic semiconductor device containing Lattice mismatched III-nitride semiconductor materials 失效含有晶格不匹配的III族氮化物半导体材料的III族氮化物光电半导体器件
公开(公告)号：US6072189A
公开(公告)日：2000-06-06
申请号：US111975
申请日：1998-07-08
申请人： Geoffrey Duggan
发明人： Geoffrey Duggan
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/0025 , H01S5/32341 , H01S5/3201 , H01S5/3215 , H01S5/3409 , H01S5/34333
摘要： A light-emitting diode or laser diode comprises a sapphire substrate and, grown on the substrate, a GaN buffer layer, an n-doped GaN contact layer, an n-doped (AlGa)N cladding layer, a Zn-doped (InGa)N active layer, a p-doped (AlGa)N cladding layer and a p-doped GaN contact layer. Graded layers are introduced at the interfaces between the cladding layers and both the contact layers and the active layer. The constituency of each graded layer is graded from one side to the other of the layer such that the layer is lattice matched with the adjacent layer on each side with the result that the strain at the interfaces between the layers is reduced and the possibility of deleterious dislocations being introduced at the interfaces is minimized. By removing or reducing such dislocations, the efficiency of the operation of the device is increased.
摘要翻译： 发光二极管或激光二极管包括蓝宝石衬底，并且在衬底上生长GaN缓冲层，n掺杂GaN接触层，n掺杂（AlGa）N包覆层，Zn掺杂（InGa） N有源层，p掺杂（AlGa）N覆层和p掺杂的GaN接触层。 在包覆层和接触层和有源层之间的界面处引入渐变层。 每个分级层的选区从层的一侧分级到另一层，使得该层与每侧的相邻层晶格匹配，结果是层之间的界面处的应变减小，并且有害的可能性 在界面处引入的位错最小化。 通过去除或减少这种位错，装置的操作效率提高。
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公开(公告)号：US6146458A
公开(公告)日：2000-11-14
申请号：US41269
申请日：1998-03-12
IPC分类号： C30B23/08 , C30B23/02 , C30B29/38 , H01L21/203 , C30B25/14
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , Y10T117/10
摘要： A method of growing a layer of Group III nitride material on a substrate by molecular beam epitaxy includes the steps of (i) disposing a substrate in a vacuum chamber, (ii) reducing the pressure in the vacuum chamber to a pressure suitable for epitaxial growth by molecular beam epitaxy, (iii) supplying ammonia through an outlet of a first supply conduit into the vacuum chamber so that the ammonia flows towards the substrate; and (iv) supplying a Group III element in elemental form through an outlet of a second supply conduit into the vacuum chamber so that said Group III element flows towards the substrate. The method causes a layer containing Group III nitride to be grown on the substrate by molecular beam epitaxy. In the method, the outlet of the first supply conduit is disposed nearer to the substrate than the outlet of the second supply conduit.
摘要翻译： 通过分子束外延在衬底上生长III族氮化物材料层的方法包括以下步骤：（i）在真空室中设置衬底，（ii）将真空室中的压力降低至适于外延生长的压力 通过分子束外延，（iii）将氨通过第一供应导管的出口供应到真空室中，使得氨向基板流动; 和（iv）通过第二供应导管的出口将元素III族元素供应到真空室中，使得所述III族元件朝向基底流动。 该方法通过分子束外延使含有III族氮化物的层在衬底上生长。 在该方法中，第一供应管道的出口设置成比第二供应管道的出口更靠近基板。
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公开(公告)号：US6001173A
公开(公告)日：1999-12-14
申请号：US866527
申请日：1997-05-30
申请人： Timothy David Bestwick , Geoffrey Duggan , Stewart Edward Hooper , Tin Sung Cheng , Charles Thomas Bayley Foxon
发明人： Timothy David Bestwick , Geoffrey Duggan , Stewart Edward Hooper , Tin Sung Cheng , Charles Thomas Bayley Foxon
IPC分类号： C30B29/40 , C30B23/02 , H01L21/203 , H01L21/205 , H01L33/00 , H01S5/00 , H01S5/323 , C30B25/02
CPC分类号： C30B23/02 , C30B29/40 , C30B29/406 , H01L33/007
摘要： A method of forming a smooth, continuous compound semiconductor film, e.g., a GaN film, is provided. When a GaN film is formed in accordance with this method, Ga is caused to arrive at a sapphire substrate in accordance with a first arrival rate profile over a growth period during which the film is formed, and nitrogen is caused to arrive at the substrate in accordance with a second arrival rate profile over the growth period. The first and second arrival rate profiles are such that the Ga and N are caused to arrive simultaneoulsly at the substrate over the growth period and so that (i) during an initial part of the growth period, growth of the film takes place under a stoichiometric exccess of Ga and (ii) during a subsequent part of the growth period, growth of the film takes place under a stoichiometric excess of N.
摘要翻译： 提供了形成平滑连续的化合物半导体膜例如GaN膜的方法。 当根据该方法形成GaN膜时，使Ga在形成膜的生长期内按照第一到达速率曲线到达蓝宝石衬底，并且使氮气到达衬底处 按照增长期的第二个到达率曲线。 第一和第二到达速率曲线是这样的，使Ga和N在生长期间同时到达底物，并且使得（i）在生长期的初始部分期间，膜的生长在化学计量 Ga的分解和（ii）在生长期的后续部分期间，膜的生长在化学计量过量的N下进行。
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公开(公告)号：US5747827A
公开(公告)日：1998-05-05
申请号：US612294
申请日：1996-03-07
IPC分类号： H01S5/00 , H01L31/0352 , H01L33/04 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/347 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L33/04 , B82Y20/00 , H01L31/0352 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/2013 , H01S5/3216 , H01S5/3415 , H01S5/3416 , H01S5/3425 , H01S5/34333 , H01S5/347
摘要： An optoelectronic semiconductor device is provided in which carrier transport towards the active region thereof is enhanced by the formation of a miniband within a superlattice region of the device having a repeating pattern of first and second semiconductor regions. The minimum energy level of the miniband is equal to or greater than the energy level of a guiding region between the active region and the superlattice region.
摘要翻译： 提供了一种光电半导体器件，其中通过在具有第一和第二半导体区域的重复图案的器件的超晶格区域内形成微型物体来增强其向其有源区域的载流子传输。 微型物体的最小能级等于或大于有源区域和超晶格区域之间的引导区域的能级。
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公开(公告)号：US20090161713A1
公开(公告)日：2009-06-25
申请号：US11916962
申请日：2006-06-02
IPC分类号： H01S5/00
CPC分类号： H01S5/18394 , B82Y20/00 , H01L33/105 , H01S5/18311 , H01S5/18327 , H01S5/18391 , H01S5/34326 , H01S2301/166 , H01S2302/00
摘要： A visible wavelength vertical cavity surface emitting laser suitable for single mode operation has an oxide aperture (81, 82) for concentrating electrical current within a central axial portion (143) of the device and a surface relief feature (144, 146) at an output surface of the device selecting for substantially single lateral mode of operation. The relationship between oxide confinement structure diameter (140) and surface relief feature diameter (141) has been mapped to provide optimum conditions for single mode behaviour and define a region of that space to produce optimum device performance in the visible device operating wavelength band between 630 nm and 690 nm.
摘要翻译： 适用于单模操作的可见波长垂直腔表面发射激光器具有用于将电流集中在装置的中心轴向部分（143）内的氧化物孔（81,82）和在输出端处的表面起伏特征（144,146） 该装置的表面选择基本上单一横向操作模式。 氧化物限制结构直径（140）和表面起伏特征直径（141）之间的关系已经被映射以提供单模行为的最佳条件，并且定义该空间的区域以在630的可见设备工作波长带中产生最佳设备性能 nm和690nm。
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8.发明授权III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials 失效含有晶格不匹配的III-Nitride半导体材料的III-Nitride光电半导体器件公开(公告)号：US06695913B1
公开(公告)日：2004-02-24
申请号：US09500164
申请日：2000-02-08
申请人： Geoffrey Duggan
发明人： Geoffrey Duggan
IPC分类号： C30B2510
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/0025 , H01S5/3201 , H01S5/3215 , H01S5/32341 , H01S5/3409 , H01S5/34333
摘要： A light-emitting diode or laser diode comprises a sapphire substrate and, grown on the substrate, a GaN buffer layer, an n-doped GaN contact layer, an n-doped (AlGa)N cladding layer, a Zn-doped (InGa)N active layer, a p-doped (AlGa)N cladding layer and a p-doped GaN contact layer. Graded layers are introduced at the interfaces between the cladding layers and both the contact layers and the active layer. The constituency of each graded layer is graded from one side to the other of the layer such that the layer is lattice matched with the adjacent layer on each side with the result that the strain at the interfaces between the layers is reduced and the possibility of deleterious dislocations being introduced at the interfaces is minimised. By removing or reducing such dislocations, the efficiency of the operation of the device is increased.
摘要翻译： 发光二极管或激光二极管包括蓝宝石衬底，并且在衬底上生长GaN缓冲层，n掺杂GaN接触层，n掺杂（AlGa）N包覆层，Zn掺杂（InGa） N有源层，p掺杂（AlGa）N覆层和p掺杂的GaN接触层。 在包覆层和接触层和有源层之间的界面处引入渐变层。 每个分级层的选区从层的一侧分级到另一层，使得该层与每侧的相邻层晶格匹配，结果是层之间的界面处的应变减小，并且有害的可能性 在界面处引入的位错最小化。 通过去除或减少这种位错，装置的操作效率提高。
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公开(公告)号：US6084898A
公开(公告)日：2000-07-04
申请号：US991237
申请日：1997-12-16
CPC分类号： B82Y20/00 , H01S5/2004 , H01S2301/176 , H01S5/183 , H01S5/2009 , H01S5/3211 , H01S5/3415 , H01S5/3416 , H01S5/3432 , H01S5/34326
摘要： A separate confinement heterostructure (SCH) laser device (LD) has: a quantum well active region within an optical guiding region; and, n-type and p-type cladding regions provided on opposite sides of the optical guiding region. An electron-capture layer is provided in the n-side portion of the optical guiding region. The composition of the electron-capture layer is set in such a manner that the minimum energy for X-electrons in the conduction band is lower than that in the surrounding parts of the active region and/or the n-side portion of the optical guiding region. The electron-capture layer is thick enough to bind X-electrons so that, in use, the electron-capture layer promotes the capture of the X-electrons. The electron-capture layer is disposed sufficiently close to the active region to permit transfer ot the captured X-electrons to at least one .GAMMA.-confined level in the active region.
摘要翻译： 单独的约束异质结构（SCH）激光器件（LD）具有：在光学引导区域内的量子阱有源区; 以及设置在光导引区域的相对侧上的n型和p型包层区域。 电子捕获层设置在光导区域的n侧部分。 电子捕获层的组成被设定为使得导电带中的X电子的最小能量低于有源区域的周围部分和/或导光体的n侧部分的能量 地区。 电子捕获层足够厚以结合X电子，使得在使用中，电子捕获层促进X电子的捕获。 电子捕获层设置得足够靠近有源区，以允许捕获的X电子转移到活性区域中的至少一个GAMMA限制水平。
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公开(公告)号：US5991321A
公开(公告)日：1999-11-23
申请号：US991236
申请日：1997-12-16
申请人： Geoffrey Duggan
发明人： Geoffrey Duggan
CPC分类号： H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/2013
摘要： A separate confinement heterostructure laser device has an optical guiding region, an active region in the optical guiding region, and p-type and n-type cladding regions on opposite sides of the optical guiding region. At least one barrier layer is present within the p-type cladding region. The composition of the barrier layer is such that it has an X-minimum higher than that of adjacent parts of the p-type cladding region. The composition and/or thickness of the barrier layer is also such that it has a .GAMMA.-minimum which is higher than the X-minima of the adjacent parts of the p-type, cladding region. The thickness of the barrier layer is such as to prevent electron tunneling between the X-bands of the adjacent parts of the p-type cladding region on opposite sides of the barrier layer, and/or the compositions of the adjacent parts of the p-type cladding region on opposite sides of the barrier layer are sufficiently different from one another to prevent such tunneling.
摘要翻译： 单独的限制异质结构激光器件具有光导引区域，光导引区域中的有源区域以及光导引区域的相对侧上的p型和n型覆盖区域。 至少一个阻挡层存在于p型包层区域内。 阻挡层的组成使得其具有比p型包层区域的相邻部分高的X最小值。 阻挡层的组成和/或厚度也使得其具有高于p型包层区域的相邻部分的X最小值的GAMMA最小值。 阻挡层的厚度是为了防止在阻挡层的相对侧上的p型包层区域的相邻部分的X带之间的电子隧穿，和/或p型包层区的相邻部分的组成， 在阻挡层的相对侧上的类型包层区域彼此充分地不同以防止这种隧道化。
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