Nonvolatile resistance change device
    1.
    发明授权
    Nonvolatile resistance change device 有权
    非易失性电阻变化装置

    公开(公告)号:US08450709B2

    公开(公告)日:2013-05-28

    申请号:US13052165

    申请日:2011-03-21

    IPC分类号: H01L29/02

    摘要: According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner.

    摘要翻译: 根据一个实施例,布置在第二电极和第一电极之间并且第一导电细丝能够基于从第二电极提供的金属生长的第一可变电阻层,以及第n可变电阻层,其是第 布置在第n电极和第(n + 1)电极之间,并且其中生长速度不同于第一导电细丝的第n导电细丝能够基于从第(n + 1)个 )电极,包括在第一电极层和第(n + 1)电极层之间串联电连接多根导电丝的结构,并且电阻以逐步的方式改变。

    Nonvolatile variable resistive device
    4.
    发明授权
    Nonvolatile variable resistive device 有权
    非易失性可变电阻器件

    公开(公告)号:US09105838B2

    公开(公告)日:2015-08-11

    申请号:US13228753

    申请日:2011-09-09

    摘要: According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode.

    摘要翻译: 根据一个实施例,第一电极包括金属元件。 第二电极包括半导体元件。 第三电极包括金属元件。 第一可变电阻层布置在第一电极和第二电极之间,并且能够通过灯丝形成和第一电极的金属元件的溶解来可逆地改变电阻。 第二可变电阻层布置在第二电极和第三电极之间,并且能够通过灯丝形成和第三电极的金属元件的溶解来可逆地改变电阻。

    Programmable logic switch
    5.
    发明授权
    Programmable logic switch 有权
    可编程逻辑开关

    公开(公告)号:US08432186B1

    公开(公告)日:2013-04-30

    申请号:US13484639

    申请日:2012-05-31

    IPC分类号: H03K19/173

    摘要: One embodiment provides a programmable logic switch in which a first nonvolatile memory and a second nonvolatile memory are formed in the same well, and in which to change the first nonvolatile memory from an erased state to a written state and leave the second nonvolatile memory being in the erased state, a first write voltage is applied to a first line connected with gate electrodes of the first and second nonvolatile memories, a second write voltage is applied to a second line connected to a source in the first nonvolatile memory, and a third write voltage lower than the second write voltage is applied to a fourth line connected to a source of the second nonvolatile memory.

    摘要翻译: 一个实施例提供一种可编程逻辑开关,其中在同一个阱中形成第一非易失性存储器和第二非易失性存储器,并且其中将第一非易失性存储器从擦除状态改变为写入状态,并使第二非易失性存储器处于 擦除状态时,将第一写入电压施加到与第一和第二非易失性存储器的栅电极连接的第一线,第二写入电压被施加到连接到第一非易失性存储器中的源极的第二线,并且第三写入 低于第二写入电压的电压被施加到连接到第二非易失性存储器的源极的第四线路。

    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    非挥发性半导体存储器件及其制造方法

    公开(公告)号:US20120280303A1

    公开(公告)日:2012-11-08

    申请号:US13366845

    申请日:2012-02-06

    IPC分类号: H01L29/788 H01L21/336

    摘要: According to one embodiment, a first trench extending in a first direction is formed in a stacked structure in which a plurality of spacer films and a plurality of channel semiconductor films are alternately stacked. A first space is formed by forming a recess in the channel semiconductor films from the first trench. A tunnel dielectric film is formed in the first space, and the first space is further filled with a floating gate electrode film. Second trenches that divide the stacked structure at predetermined interval in the first direction are formed so as to divide the floating gate electrode film between memory cells adjacent to each other in the first direction but not to divide the channel semiconductor films.

    摘要翻译: 根据一个实施例,沿着第一方向延伸的第一沟槽以堆叠结构形成,其中多个隔离膜和多个沟道半导体膜交替堆叠。 通过在沟道半导体膜中形成来自第一沟槽的凹部来形成第一空间。 在第一空间中形成隧道电介质膜,并且第一空间进一步填充浮栅电极膜。 形成在第一方向上以预定间隔划分堆叠结构的第二沟槽,以便在第一方向上彼此相邻的存储单元之间划分浮栅电极膜,但不划分沟道半导体膜。

    NONVOLATILE VARIABLE RESISTIVE DEVICE
    9.
    发明申请
    NONVOLATILE VARIABLE RESISTIVE DEVICE 有权
    非易失性可变电阻器件

    公开(公告)号:US20120211719A1

    公开(公告)日:2012-08-23

    申请号:US13228753

    申请日:2011-09-09

    IPC分类号: H01L45/00

    摘要: According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode.

    摘要翻译: 根据一个实施例,第一电极包括金属元件。 第二电极包括半导体元件。 第三电极包括金属元件。 第一可变电阻层布置在第一电极和第二电极之间,并且能够通过灯丝形成和第一电极的金属元件的溶解来可逆地改变电阻。 第二可变电阻层布置在第二电极和第三电极之间,并且能够通过灯丝形成和第三电极的金属元件的溶解来可逆地改变电阻。