摘要:
According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion provided at one end of the beam, and a low resistance portion provided between the contact portion and the end portion of the structure.
摘要:
According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to n-th semiconductor layers extending in a second direction parallel to the surface of the insulating layer, the first to n-th semiconductor layers being insulated from each other, a common electrode connected to the first to n-th semiconductor layers in a first end of the second direction thereof, and a layer select transistor which uses the first to n-th semiconductor layers as channels and which selects one of the first to n-th semiconductor layers.
摘要:
According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode.
摘要:
One embodiment provides a programmable logic switch in which a first nonvolatile memory and a second nonvolatile memory are formed in the same well, and in which to change the first nonvolatile memory from an erased state to a written state and leave the second nonvolatile memory being in the erased state, a first write voltage is applied to a first line connected with gate electrodes of the first and second nonvolatile memories, a second write voltage is applied to a second line connected to a source in the first nonvolatile memory, and a third write voltage lower than the second write voltage is applied to a fourth line connected to a source of the second nonvolatile memory.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor layers stacked in a perpendicular direction. Assist gate electrodes are disposed in an in-plane direction and divided on a surface in the perpendicular direction of the structures.
摘要:
According to one embodiment, a semiconductor device includes a fin type stacked layer structure which has first to third semiconductor layers, and first to third layer select transistors to select one of the first to third semiconductor layers. The second layer select transistor is normally on in the second semiconductor layer, and is controlled to be on or off in the first and third semiconductor layers. A channel region of the second semiconductor layer which is covered with a gate electrode of the second layer select transistor has a metal silicide.
摘要:
According to one embodiment, a first trench extending in a first direction is formed in a stacked structure in which a plurality of spacer films and a plurality of channel semiconductor films are alternately stacked. A first space is formed by forming a recess in the channel semiconductor films from the first trench. A tunnel dielectric film is formed in the first space, and the first space is further filled with a floating gate electrode film. Second trenches that divide the stacked structure at predetermined interval in the first direction are formed so as to divide the floating gate electrode film between memory cells adjacent to each other in the first direction but not to divide the channel semiconductor films.
摘要:
According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode.