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12 条记录 (耗时 0.024 秒)

    Compositions of neutral layer for directed self assembly block copolymers and processes thereof
    5.
    发明授权
    Compositions of neutral layer for directed self assembly block copolymers and processes thereof 有权
    用于定向自组装嵌段共聚物的中性层组合物及其工艺

    公开(公告)号：US09052598B2

    公开(公告)日：2015-06-09

    申请号：US14180848

    申请日：2014-02-14

    申请人： Hengpeng Wu ,  Yi Cao ,  SungEun Hong ,  Jian Yin ,  Margareta Paunescu ,  Mark O Neisser ,  Guanyang Lin

    发明人： Hengpeng Wu ,  Yi Cao ,  SungEun Hong ,  Jian Yin ,  Margareta Paunescu ,  Mark O Neisser ,  Guanyang Lin

    IPC分类号： G03F7/20 ,  C08L53/00 ,  C08F118/02 ,  C08L33/12 ,  C08F293/00 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

    CPC分类号： G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  C08F212/08 ,  C08F212/32 ,  C08F220/14 ,  C08F293/00 ,  C08L53/00 ,  C09D125/14 ,  C09D125/16 ,  G03F7/0002 ,  G03F7/2037

    摘要： The present invention relates to novel processes for using the neutral layer compositions for aligning microdomains of directed self-assembling block copolymers (BCP). The processes are useful for fabrication of electronic devices. The novel processes comprise a step of forming a coating of the neutral layer from the neutral layer composition, wherein the neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where R1 is selected from the group consisting of a C1-C8 alkyl, C1-C8 fluoroalkyl moiety, C1-C8 partially fluorinated alkyl, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl and C1-C8 fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, C1-C8 alkyl and a C1-C8 fluoroalkyl and m ranges from 1 to 3.

    摘要翻译： 本发明涉及使用中性层组合物对准定向自组装嵌段共聚物（BCP）的微区域的新方法。 该方法对于制造电子器件是有用的。 该新方法包括从中性层组合物形成中性层的涂层的步骤，其中中性层组合物包含至少一种具有至少一个结构单元（1），至少一个结构单元（2）的无规共聚物 ）和至少一个结构单元（3），其中R 1选自C 1 -C 8烷基，C 1 -C 8氟烷基部分，C 1 -C 8部分氟化烷基，C 4 -C 8环烷基，C 4 -C 8环氟烷基，C 4 -C8部分氟化的环烷基，和C2-C8羟烷基; R2，R3和R5独立地选自H，C1-C4烷基，CF3和F; R 4选自H，C 1 -C 8烷基，C 1 -C 8部分氟化烷基和C 1 -C 8氟代烷基，n为1至5，R 6选自H，F，C 1 -C 8烷基 和C 1 -C 8氟烷基，m为1至3。

    Compositions of neutral layer for directed self assembly block copolymers and processes thereof
    7.
    发明授权
    Compositions of neutral layer for directed self assembly block copolymers and processes thereof 有权
    用于定向自组装嵌段共聚物的中性层组合物及其工艺

    公开(公告)号：US08691925B2

    公开(公告)日：2014-04-08

    申请号：US13243640

    申请日：2011-09-23

    申请人： Hengpeng Wu ,  Yi Cao ,  SungEun Hong ,  Jian Yin ,  Margareta Paunescu ,  Mark O. Neisser ,  Guanyang Lin

    发明人： Hengpeng Wu ,  Yi Cao ,  SungEun Hong ,  Jian Yin ,  Margareta Paunescu ,  Mark O. Neisser ,  Guanyang Lin

    IPC分类号： C08F118/02 ,  G03F7/20 ,  C08L33/12

    CPC分类号： G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  C08F212/08 ,  C08F212/32 ,  C08F220/14 ,  C08F293/00 ,  C08L53/00 ,  C09D125/14 ,  C09D125/16 ,  G03F7/0002 ,  G03F7/2037

    摘要： The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where R1 is selected from the group consisting of a C1-C8 alkyl, C1-C8 fluoroalkyl moiety, C1-C8 partially fluorinated alkyl, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl and C1-C8 fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, C1-C8 alkyl and a C1-C8 fluoroalkyl and m ranges from 1 to 3.

    摘要翻译： 本发明涉及新型中性层组合物和使用该组合物的方法。 中性层组合物包含至少一种具有至少一个结构单元（1），至少一个结构单元（2）和至少一个结构单元（3）的无规共聚物，其中R1选自 C 1 -C 8烷基，C 1 -C 8氟烷基部分，C 1 -C 8部分氟化烷基，C 4 -C 8环烷基，C 4 -C 8环氟烷基，C 4 -C 8部分氟化环烷基和C 2 -C 8羟烷基; R2，R3和R5独立地选自H，C1-C4烷基，CF3和F; R 4选自H，C 1 -C 8烷基，C 1 -C 8部分氟化烷基和C 1 -C 8氟代烷基，n为1至5，R 6选自H，F，C 1 -C 8烷基 和C 1 -C 8氟烷基，m为1至3。

    Composition for Coating over a Photoresist Pattern Comprising a Lactam
    9.
    发明申请
    Composition for Coating over a Photoresist Pattern Comprising a Lactam 审中-公开
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US20120219919A1

    公开(公告)日：2012-08-30

    申请号：US13033912

    申请日：2011-02-24

    申请人： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    发明人： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    IPC分类号： G03F7/26

    CPC分类号： G03F7/405

    摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4.The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    摘要翻译： 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH） （NH 2），羧酸和酰胺（CONH 2）表示与聚合物的连接，m = 1-6，n = 1-4。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。

    Composition for coating over a photoresist pattern comprising a lactam
    10.
    发明授权
    Composition for coating over a photoresist pattern comprising a lactam 有权
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US07923200B2

    公开(公告)日：2011-04-12

    申请号：US11697804

    申请日：2007-04-09

    申请人： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    发明人： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    IPC分类号： G03F7/40

    CPC分类号： G03F7/40 ,  C09D139/00

    摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2),  represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    摘要翻译： 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH） （NH 2），羧酸和酰胺（CONH 2）表示与聚合物的连接，m = 1-6，n = 1-4。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。