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公开(公告)号：US20080048194A1
公开(公告)日：2008-02-28
申请号：US11629532
申请日：2005-06-13
IPC分类号： H01L29/22
摘要： A nitride semiconductor light emitting element having a laminate S made of a semiconductor crystal layer, wherein the laminate S includes an n-type layer 2, a light emitting layer 3 and a p-type layer 4. The p-type layer 4 has a p-type contact layer 42 to be in contact with the p-side electrode P2. The p-type contact layer 42 comprises a first contact layer 42a and a second contact layer 42b. The first contact layer 42a is in contact with the p-side electrode P2 on one surface and in contact with the second contact layer 42b on the other surface. The first contact layer 42a is made of Alx1Iny1Gaz1N (0
摘要翻译： 具有由半导体晶体层构成的层叠体S的氮化物半导体发光元件，其中层叠体S包括n型层2，发光层3和p型层4. p型层4具有 p型接触层42与p侧电极P 2接触.p型接触层42包括第一接触层42a和第二接触层42b。 第一接触层42a在一个表面上与p侧电极P 2接触并且在另一个表面上与第二接触层42b接触。 第一接触层42a由Al x 1 N 1（0
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2.发明授权Semiconductor light emitting element with In GaAlP active layer of specified thickness 失效具有规定厚度的InGaAlP有源层的半导体发光元件
公开(公告)号：US5710440A
公开(公告)日：1998-01-20
申请号：US600295
申请日：1996-02-12
CPC分类号： H01L33/30 , H01L33/14 , H01L33/305
摘要： A semiconductor light emitting element comprising an n-type semiconductor substrate and a light emitting part comprising an n-type cladding layer composed of an InGaAlP compound semiconductor material, an active layer and a p-type cladding layer formed in that order from the substrate side by double heterojunction, wherein said semiconductor light emitting element satisfies at least one of the following conditions: A. the thickness of said active layer being greater than 0.75 .mu.m and not more than 1.5 .mu.m, and B. the thickness of said p-type cladding layer being 0.5 .mu.m-2.0 .mu.m. According to the light emitting element of the present invention, an overflow of electron into the p-type cladding layer can be suppressed by setting the thickness of the active layer and the p-type cladding layer to fall within the above-mentioned specific ranges, as a result of which the element shows luminous efficiency peaked within the specified range.
摘要翻译： 一种半导体发光元件，包括n型半导体衬底和发光部分，所述发光部分包括由InGaAlP化合物半导体材料，有源层和p型覆层组成的n型覆层，所述n型覆盖层从衬底侧依次形成 通过双异质结，其中所述半导体发光元件满足以下条件中的至少一个：A.所述有源层的厚度大于0.75μm且不大于1.5μm，并且B.所述p- 型包层为0.5μm-2.0μm。 根据本发明的发光元件，通过将有源层和p型覆盖层的厚度设定在上述特定范围内，可以抑制电子向p型覆层的溢出， 结果，该元件显示在特定范围内达到峰值的发光效率。
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3.发明授权Semiconductor light emitting element with a current diffusing layer having a changing carrier concentration therein 失效具有其中载流子浓度变化的电流扩散层的半导体发光元件
公开(公告)号：US5635733A
公开(公告)日：1997-06-03
申请号：US601279
申请日：1996-02-16
CPC分类号： H01L33/14
摘要： In the light emitting element comprising an n-type semiconductor substrate, a lower electrode formed on the lower surface of the substrate, and a light emitting part having a pn junction, which is composed of an InGaAlP compound semiconductor material, a p-type current diffusing layer and an upper electrode which are laminated on the upper surface of the substrate in that order from the substrate side, the improvement wherein a carrier concentration of the current diffusing layer is lower on a light emitting part side thereof than that on an upper electrode side thereof, and at least the upper electrode side of the current diffusing layer is composed of GaP. By employing such structure, diffusion of the dopant to a light emitting part can be suppressed even when the carrier concentration of the upper part of the current diffusing layer is set to be higher, thereby affording a lower resistance of the current diffusing layer as a whole. The GaP being a compound semiconductor without Al, the amount of the dopant necessary for affording the superior effects of suppressing the diffusion of the dopant to the light emitting part can be less. Consequently, the luminous efficiency can be improved as compared with conventional ones, and a light emitting element having a long service life and superior reliability can be obtained.
摘要翻译： 在包含n型半导体衬底的发光元件中，形成在衬底的下表面上的下电极和由InGaAlP化合物半导体材料构成的具有pn结的发光部分，p型电流 扩散层和上电极，从衬底侧依次层叠在衬底的上表面上，其中电流扩散层的发光部分侧的载流子浓度比上电极的载流子浓度低 并且电流扩散层的至少上电极侧由GaP构成。 通过采用这样的结构，即使将电流扩散层的上部的载流子浓度设定得较高，也能够抑制掺杂剂向发光部的扩散，从而提供整体上的电流扩散层的较低的电阻 。 GaP是没有Al的化合物半导体，可以减少为了提供抑制掺杂剂向发光部的扩散的优异效果所需的掺杂剂的量。 因此，与现有技术相比，能够提高发光效率，能够得到使用寿命长，可靠性优异的发光元件。
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公开(公告)号：US06794210B2
公开(公告)日：2004-09-21
申请号：US10703330
申请日：2003-11-07
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02658 , H01L33/007 , H01L33/0075
摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.
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5.发明授权Method for growing GaN compound semiconductor crystal and semiconductor substrate 失效生长GaN化合物半导体晶体和半导体衬底的方法公开(公告)号：US06700179B1
公开(公告)日：2004-03-02
申请号：US09937337
申请日：2001-12-18
IPC分类号： H01L2922
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02658 , H01L33/007 , H01L33/0075
摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.
摘要翻译： 用抗表面活性剂材料改变形成在基板11上的基板11或GaN基化合物半导体膜12的表面的状态，并通过气相生长法提供GaN族化合物半导体材料，以形成点状结构 的半导体膜12的表面上的GaN族化合物半导体，并且继续生长直到点结构接合并且表面变平坦。 在这种情况下，点状结构在抗表面活性剂区域上形成空腔21时连接。 从底层延伸的位错线22被空腔21阻挡，因此可以减小外延膜表面的位错密度。 结果，可以在外延生长中不使用掩模材料来降低GaN族化合物半导体晶体的位错密度，由此可以获得高质量的外延膜。
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公开(公告)号：US5793061A
公开(公告)日：1998-08-11
申请号：US703482
申请日：1996-08-28
CPC分类号： H01L33/32
摘要： A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer between a p-type cladding layer and an active layer. The diode having a diffusion suppressive layer of the present invention has higher luminous intensity, greater forward voltage, and longer lifetime than the conventional diodes.
摘要翻译： 一种III族氮化物基发光体，例如LED和LD，其具有双异质结构，并且在p型包覆层和有源层之间包括扩散抑制层。 具有本发明的扩散抑制层的二极管具有比常规二极管更高的发光强度，更大的正向电压和更长的寿命。
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公开(公告)号：US07179667B2
公开(公告)日：2007-02-20
申请号：US10380933
申请日：2001-09-17
CPC分类号： C30B29/403 , C30B25/18 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265
摘要： As shown in FIG. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in FIG. 1(b), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in FIG. 1(c). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality.
摘要翻译： 如图所示。 如图1（a）所示，使用具有凹凸表面的生长面的基板1。 当GaN基晶体使用该衬底气相生长时，凹凸形状抑制横向生长并促进C轴方向的生长，从而提供能够形成小平面的基表面。 因此，如图1所示。 如图1（b）所示，具有小平面的晶体生长在凸部中，并且晶体也在凹部中生长。 当晶体生长持续时，如图3所示，从凸部和凹部生长的膜及时接合以覆盖凹凸表面并变平。 1（c）。 在这种情况下，在形成有小平面的凸部的上部形成有位错密度低的区域，所制备的膜具有高质量。
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8.发明申请Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method 有权半导体基体及其制造方法，半导体晶体制造方法公开(公告)号：US20070026643A1
公开(公告)日：2007-02-01
申请号：US11529905
申请日：2006-09-29
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/0265 , H01L33/007
摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.
摘要翻译： 基板1的生长面被加工成具有凹凸表面。 凹部的底部可能被遮蔽。 当通过使用该基板的气相生长生长晶体时，成分气体不能充分到达凹部12的内部，因此仅从凸部11的上部仅发生晶体生长。如图 。 因此，如图1（b）所示，当晶体生长开始时发生晶体单元20，并且随着晶体生长的进行，从作为起点的凸部11的上部沿横向方向生长的膜被连接 衬底1的凹凸表面，在凹部中留下空腔13，如图1所示。 如图1（c）所示，得到结晶层2，得到本发明的半导体基底。 在这种情况下，沿横向生长的部分或凹部12的上部具有低位错区域，并且所制备的晶体层具有高质量。 本发明的半导体晶体的制造方法将该半导体基体在其空腔部分分割成基板1和晶体层2，得到半导体晶体。
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9.发明授权公开(公告)号：US07053420B2
公开(公告)日：2006-05-30
申请号：US10472324
申请日：2002-03-20
IPC分类号： H01L29/22 , H01L29/24 , H01L29/227
摘要： Concaves and convexes 1a are formed by processing the surface layer of a first layer 1, and second layer 2 having a different refractive index from the first layer is grown while burying the concaves and convexes (or first crystal 10 is grown as concaves and convexes on crystal layer S to be the base of the growth, and second crystal 20 is grown, which has a different refractive index from the first crystal). After forming these concavo-convex refractive index interfaces 1a (10a), an element structure, wherein semiconductor crystal layers containing a light-emitting layer A are laminated, is formed. As a result, the light in the lateral direction, which is generated in the light-emitting layer changes its direction by an influence of the concavo-convex refractive index interface and heads toward the outside. Particularly, when an ultraviolet light is to be emitted using InGaN as a material of a light-emitting layer, a quantum well structure is employed and all the layers between the quantum well structure and the low temperature buffer layer are formed of a GaN crystal, removing AlGaN. The quantum well structure preferably consists of a well layer made of InGaN and a barrier layer made of GaN, and the thickness of the barrier layer is preferably 6 nm–30 nm.
摘要翻译： 通过处理第一层1的表面层形成凹凸1a，同时生长具有与第一层不同的折射率的第二层2，同时埋入凹凸（或第一晶体10生长为凹凸） 在晶体层S上作为生长的基底，生长第二晶体20，其具有与第一晶体不同的折射率）。 在形成这些凹凸折射率界面1a（10a）之后，形成其中层叠有发光层A的半导体晶体层的元件结构。 结果，在发光层中产生的横向的光通过凹凸折射率界面的影响而朝向外部改变其方向。 特别地，当使用InGaN作为发光层的材料发射紫外光时，采用量子阱结构，量子阱结构和低温缓冲层之间的所有层由GaN晶体形成， 去除AlGaN。 量子阱结构优选由由InGaN制成的阱层和由GaN制成的阻挡层组成，并且阻挡层的厚度优选为6nm〜30nm。
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公开(公告)号：US06734515B1
公开(公告)日：2004-05-11
申请号：US09787502
申请日：2001-03-16
申请人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Masahiro Koto , Kazumasa Hiramatsu , Yutaka Hamamura , Sumito Shimizu
发明人： Kazuyuki Tadatomo , Hiroaki Okagawa , Youichiro Ohuchi , Masahiro Koto , Kazumasa Hiramatsu , Yutaka Hamamura , Sumito Shimizu
IPC分类号： H01L2714
CPC分类号： H01L31/0304 , H01L31/022408 , H01L31/1035 , H01L31/108 , Y02E10/544
摘要： A semiconductor light receiving element having a light receiving layer (1) formed from a GaN group semiconductor, and an electrode (2) formed on one surface of the light receiving layer as a light receiving surface (1a) in such a way that the light (L) can enter the light receiving layer is provided. When the light receiving element is of a Schottky barrier type, the aforementioned electrode (2) contains at least a Schottky electrode, which is formed in such a way that, on the light receiving surface (1a), the total length of the boundary lines between areas covered with the Schottky electrode and exposed areas is longer than the length of the outer periphery of the light receiving surface (1a). In addition, when the light receiving element is of a photoconductive type, the aforementioned light receiving layer (1) is a first conductivity type i layer, and the aforementioned electrode (2) is an ohmic electrode of one polarity, and an ohmic electrode of the other polarity is formed directly or via a first conductivity type and low resistance GaN group semiconductor layer on the other surface of the light receiving layer (1).
摘要翻译： 具有由GaN族半导体形成的受光层（1）的半导体光接收元件和形成在光接收层的一个表面上的光接收表面（1a）的电极（2），使得光 （L）可以进入光接收层。 当受光元件为肖特基势垒型时，上述电极（2）至少含有肖特基电极，其形成为在受光面（1a）上形成的边界线的总长度 在被肖特基电极覆盖的区域和暴露区域之间的距离比受光面（1a）的外周长度长。 此外，当光接收元件是光电导型时，上述光接收层（1）是第一导电型i层，上述电极（2）是一极性欧姆电极，欧姆电极 另一极性直接或经由光接收层（1）的另一个表面上的第一导电类型和低电阻GaN族半导体层形成。
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