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    Organic films and a process for producing fine pattern using the same
    1.
    发明授权
    Organic films and a process for producing fine pattern using the same 失效
    有机膜和使用其制造精细图案的方法

    公开(公告)号：US06225239B1

    公开(公告)日：2001-05-01

    申请号：US09163975

    申请日：1998-09-30

    申请人： Hirotaka Ohno ,  Kazushi Fujioka ,  Mikihiro Yamanaka ,  Satoko Mitarai ,  Hiroshi Tokumoto

    发明人： Hirotaka Ohno ,  Kazushi Fujioka ,  Mikihiro Yamanaka ,  Satoko Mitarai ,  Hiroshi Tokumoto

    IPC分类号： H01L21469

    CPC分类号： B05D1/185 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/3128

    摘要： This invention provides a process for accumulating different organic molecular films on oxidized III-V-group compound semiconductor substrates in order to produce a stable, high-quality organic monomolecular film that is three-dimensionally regularly arranged, as well as a process for producing a fine pattern of such organic films. This organic film is formed by immersing a III-V group compound semiconductor substrates in a vessel containing a solution containing phosphonic acid dissolved into a solvent in order to form a self-assembled film, and placing the substrate into a different solution to adsorb metal ions to the surface of the film, or immersing the substrate in a bromide or an acid or alkali solution to denature functional groups, then immersing it in a solution containing organic molecules that are selectively chemically adsorbed to the modified functional groups. These steps are repeated to form a stable, high-quality multilayer film that is three-dimensionally regularly arranged, while controlling film thickness with an accuracy on the scale of thickness of a molecular layer. In addition, the present invention realizes the formation of a fine composite three-dimensional organic self-assembled film of the order of nanometer, characterized in that the process comprises using a cleavage method or a very-high-vacuum vessel to form on a substrate with different types of III-V-group semiconductor materials mixed thereon by means of the heteroepitaxial process such as the MBE or MOCVD process, a self-assembled film of the molecules having thiol groups in a non-oxidized area and then forming on an oxidized surface a self-assembled film of molecules having phosphoric acid group, trichlorosilyl groups or alkoxylyl groups.

    摘要翻译： 本发明提供一种用于在氧化的III-V族化合物半导体衬底上积聚不同的有机分子膜的方法，以产生三维规则排列的稳定，高质量的有机单分子膜，以及制备 这种有机薄膜的精细图案。 该有机膜通过将III-V族化合物半导体基板浸渍在含有溶解于溶剂中的膦酸溶液的容器中形成自组装膜而形成，并将基板放置在不同的溶液中以吸附金属离子 或者将基材浸入溴化物或酸或碱溶液中以使官能团变性，然后将其浸入含有选择性地化学吸附至改性官能团的有机分子的溶液中。 重复这些步骤以形成三维规则排列的稳定，高质量的多层膜，同时以分子层厚度的精度控制膜厚。此外，本发明实现了 精细复合三维有机自组装膜的纳米级，其特征在于该方法包括使用切割方法或非常高的真空容器在具有不同类型的III-V族半导体材料的基底上形成 通过诸如MBE或MOCVD工艺的异质外延工艺在其上混合，在非氧化区域中具有硫醇基的分子的自组装膜然后在氧化表面上形成具有磷酸的分子的自组装膜 基团，三氯甲硅烷基或烷氧基。

    Method for fabricating organic thin film
    2.
    发明授权
    Method for fabricating organic thin film 失效
    有机薄膜的制造方法

    公开(公告)号：US5970381A

    公开(公告)日：1999-10-19

    申请号：US924697

    申请日：1997-09-05

    申请人： Hirotaka Ohno ,  Larry A. Nagahara ,  Hiroshi Tokumoto

    发明人： Hirotaka Ohno ,  Larry A. Nagahara ,  Hiroshi Tokumoto

    IPC分类号： C30B33/00 ,  B05D1/18 ,  H01L21/20 ,  H01L51/05 ,  H01L51/40 ,  H01L21/265

    CPC分类号： B82Y30/00 ,  B05D1/185 ,  B82Y40/00 ,  Y10S438/939

    摘要： A method is provided that produces a good, strong organic monomolecular film having its atoms arranged in a three-dimensionally ordered manner by cleaving a III-V group compound semiconductor substrate in film formation molecules or in a solution containing them, in order to cause selective chemisorption which forms a monomolecular film and then deposits another layer of organic molecule film. In this method, the III-V group compound semiconductor substrate is cleaved in a solution containing SH groups dissolved into a solvent in order to form a self-assembled monolayer and is then placed in another solution, where metallic ions are adsorbed to the surface of the film or where the functional groups are converted by chemical treatment. The substrate is then immersed in a solution containing organic molecules that are selectively chemisorbed to the functional groups. This process is sequentially repeated to form good, strong multilayers having a three-dimensionally ordered arrangement while also controlling film thickness.

    摘要翻译： 提供一种方法，其通过在成膜分子中或在含有它们的溶液中裂解III-V族化合物半导体衬底，产生其原子以三维有序的方式排列的良好的强有机单分子膜，以引起选择性 化学吸附形成单分子膜，然后沉积另一层有机分子膜。 在该方法中，将III-V族化合物半导体衬底在含有溶解在溶剂中的SH基团的溶液中裂解，形成自组装单层，然后置于另一种溶液中，其中金属离子被吸附在 该膜或通过化学处理转化官能团的位置。 然后将衬底浸入含有选择性化学吸附到官能团的有机分子的溶液中。 顺序地重复该过程以形成具有三维有序排列的良好，强的多层，同时还控制膜厚度。

    Stirling engine
    8.
    发明授权
    Stirling engine 失效
    斯特林发动机

    公开(公告)号：US07168248B2

    公开(公告)日：2007-01-30

    申请号：US10564094

    申请日：2004-07-20

    申请人： Jin Sakamoto ,  Kazushi Yoshimura ,  Kenji Takai ,  Shinji Yamagami ,  Yoshiyuki Kitamura ,  Hiroshi Yasumura ,  Hirotaka Ohno

    发明人： Jin Sakamoto ,  Kazushi Yoshimura ,  Kenji Takai ,  Shinji Yamagami ,  Yoshiyuki Kitamura ,  Hiroshi Yasumura ,  Hirotaka Ohno

    IPC分类号： F01B29/10

    CPC分类号： F25B9/14 ,  F02G1/0435 ,  F02G1/053 ,  F25B2309/001

    摘要： A Stirling engine, wherein when a linear motor reciprocatingly move a piston in a cylinder, a displacer also reciprocatingly moves in the cylinder storing the displacer. By this, working mixture moves between a compression space and an expansion space. Though a spring for generating resonance is combined with the displacer, a spring for generating resonance for the piston is eliminated. Gas bearings are installed for the piston at two or more positions at specified intervals in the axial direction. An inside flange formed at the end of the cylinder and a stopper plate fixed to the linear motor determine the moving limit of the piston. Since a pin projected from the stopper plate is received by a through hole in a magnet holder, the piston can be prevented from being rotated.

    摘要翻译： 一种斯特林发动机，其中当线性马达往复运动的气缸中的活塞时，置换器也在容纳置换器的气缸中往复运动。 由此，工作混合物在压缩空间和膨胀空间之间移动。 虽然用于产生共振的弹簧与置换器组合，但是消除了用于产生活塞的共振的弹簧。 在轴向上以规定的间隔在两个或多个位置安装气体轴承。 形成在气缸端部的内凸缘和固定到线性电动机的止动板确定活塞的移动极限。 由于从止动板突出的销被磁体保持器中的通孔接收，所以可以防止活塞旋转。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140232016A1

    公开(公告)日：2014-08-21

    申请号：US14347505

    申请日：2011-09-29

    申请人： Hirotaka Ohno ,  Takuya Kadoguchi

    发明人： Hirotaka Ohno ,  Takuya Kadoguchi

    IPC分类号： H01L23/28

    CPC分类号： H01L23/28 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/562 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/0603 ,  H01L2224/3754 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： This semiconductor device includes: a first metal plate; a plurality of semiconductor elements mounted on the first metal plate; a spacer that is connected to a surface on the opposite side to the surface where the plurality of semiconductor elements are mounted on the first metal plate; a second metal plate that is connected to a surface on the opposite side to the surface where the spacer is connected to the semiconductor elements; and an encapsulating resin between the first plate and the second plate that seals the plurality of semiconductor elements. Stress due to contraction that occurs in the encapsulating resin between the plurality of semiconductor elements is relaxed to a greater extent than stress due to contraction that occurs in the encapsulating resin in the locations other than the location between the plurality of semiconductor devices.

    摘要翻译： 该半导体装置包括：第一金属板; 安装在所述第一金属板上的多个半导体元件; 连接到与所述多个半导体元件安装在所述第一金属板上的表面相反侧的表面的间隔件; 第二金属板，其连接到与间隔件连接到半导体元件的表面相反侧的表面; 以及密封所述多个半导体元件的所述第一板和所述第二板之间的封装树脂。 由于在多个半导体元件之间的位置以外的位置处发生在封装树脂中的收缩引起的由于在多个半导体元件之间的封装树脂中发生的收缩而产生的收缩的应力被更大程度地松弛。