摘要:
An optical transceiver that reduces the EMI radiation leaked therefrom is disclosed. The optical transceiver includes a top cover and the bottom base to form a cavity into which a TOSA, a ROSA, and a circuit are set. The top cover provides a combed structure in a rear portion thereof, where the combed structure has a plurality of fins with a distance preferably less that quarter wavelength λ/4 of the noise wavelength to be reduced. The combed structure operates as a short stub for the electromagnetic wave traveling longitudinally in the cavity.
摘要:
An optical transceiver that reduces the EMI radiation leaked therefrom is disclosed. The optical transceiver includes a top cover and the bottom base to form a cavity into which a TOSA, a ROSA, and a circuit are set. The top cover provides a combed structure in a rear portion thereof, where the combed structure has a plurality of fins with a distance preferably less that quarter wavelength λ/4 of the noise wavelength to be reduced. The combed structure operates as a short stub for the electromagnetic wave traveling longitudinally in the cavity.
摘要:
Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.
摘要:
Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.
摘要:
An image display apparatus of the present invention includes: a display panel; a signal processing unit which corrects an input video signal using correction parameters, and outputs the corrected video signal to the display panel; a power supply unit which supplies voltage to the display panel; a storage unit which stores the correction parameters; and a control unit, which, at startup of the image display apparatus, executes boosting processing for boosting voltage supplied from the power supply unit to the display panel up to a voltage required for driving the display panel in stages, and transfer processing for transferring the correction parameters from the storage unit to the signal processing unit, wherein the transfer processing is processing for intermittently transferring the correction parameters using a period when boosting is not performed in the boosting processing.
摘要:
To provide a field-effect transistor having a large power conversion capacity and its fabrication method by decreasing the leakage current between the source and the drain of a semiconductor device made of hexagonal-system silicon carbide when the gate voltage of the semiconductor device is turned off and also decreasing the electrical resistance of the semiconductor device when the gate voltage of the semiconductor device is turned on. The main current path of the field-effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane is parallel with the {1120} plane. �Selected Drawing!FIG. 1
摘要:
Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.
摘要:
Use of Pb-free solder has become essential due to the environmental problem. A power module is formed by soldering substrates with large areas. It is known that in Sn-3Ag-0.5Cu which hardly creeps and deforms with respect to large deformation followed by warpage of the substrate, life is significantly shortened with respect to the temperature cycle test, and the conventional module structure is in the situation having difficulty in securing high reliability. Thus, the present invention has an object to select compositions from which increase in life can be expected at a low strain rate. In Sn solder, by doping In by 3 to 7% and Ag by 2 to 4.5%, the effect of delaying crack development at a low strain rate is found out, and as a representative composition stable at a high temperature, Sn-3Ag-0.5Cu-5In is selected. Further, for enhancement of reliability, a method for partially coating a solder end portion with a resin is shown.