摘要:
In a semiconductor memory device of a divided bit line system, read signals from memory cell blocks are sense-amplified together by a single differential bit line sense amplifier. The bit line sense amplifier includes a plurality of first transistors, the base electrodes of which are connected to local bit lines of the memory cell blocks, the emitter electrodes of which are commonly connected to corresponding main bit lines, and the collector electrodes of which are connected to a first power supply node, a second transistor, which forms a differential pair with each of the first transistors, the base electrode of which is applied with a reference bias potential, and the emitter electrode of which is connected to the main bit lines, a current source connected between the emitter electrode of the second transistor, and a second power supply node, and a load circuit connected between the collector electrode of the second transistor and the first power supply node. The main bit lines with a heavy load can be driven by the emitters having a large driving force, and the outputs from the memory cell blocks can be sensed without going through selectors, thus attaining high-speed read access.
摘要:
Disclosed is a semiconductor integrated circuit of a bipolar CMOS gate array type having a plurality of basic cells arranged in a matrix. Each cell comprises MOS transistors as memory cells, a bipolar transistor, a resistance and bit lines, for transferring data stored in the memory cells to the outside. The semiconductor integrated circuit is characterized in that the basic cells are grouped into a plurality of blocks, the bipolar NPN transistor in each block is used as a driver for reading operations of the data stored in the memory cells in each block, and the bit line is kept at a logic state "0" before the reading operations for the memory cells.
摘要:
A semiconductor memory circuit device having memory cells constructed on a BiCMOS gate array includes amplifying means constituted by a bipolar transistor connected to the output stage of each of memory cells arranged in a matrix form on a semiconductor substrate and formed in a gate array memory cell configuration by use of the Master slice approach. The amplifying means amplifies the potential level of readout data of the memory cell and output the same to an output line, thus enhancing the driving ability of the output line and reducing the whole readout time for reading out data from the memory circuit.
摘要:
An electrooptic device includes first and second substrates that are disposed opposing each other with an electrooptic material layer therebetween, a sealing material that bonds the first and second substrates, a pixel area, and an ion trap portion between the pixel area and the sealing material. The ion trap portion includes first and second electrodes that are formed in a comb-tooth shape and are disposed so that branch electrodes of the first electrode and branch electrodes of the second electrode are engaged with each other. A direction of the branch electrodes intersects with an orientation direction of the electrooptic material at an interface between the electrooptic material layer and the first substrate.
摘要:
A CPU perform the steps of: (a) causing a compression/decompression processor to decompress the compressed data of one of three bands in the data area except for the first block in the band, and storing decompressed bitmap data in the data area; (b) rasterizing each of the intermediate data blocks in the band and synthesizing the rasterized data and the decompressed bitmap data in the band; and (c) causing the compression/decompression processor to compress the synthesized bitmap data and storing the compressed data in the data area. The CPU performs the steps (a) to (c) in different respective tasks in parallel, and performs the steps (a) to (c) along the order of (a), (b), (c) for each of the intermediate code blocks in each of the bands while using the 1st to the 3rd bitmap data area in turn for each of the steps (a) to (c).
摘要:
A CPU perform the steps of: (a) causing a compression/decompression processor to decompress the compressed data of one of three bands in the data area except for the first block in the band, and storing decompressed bitmap data in the data area; (b) rasterizing each of the intermediate data blocks in the band and synthesizing the rasterized data and the decompressed bitmap data in the band; and (c) causing the compression/decompression processor to compress the synthesized bitmap data and storing the compressed data in the data area. The CPU performs the steps (a) to (c) in different respective tasks in parallel, and performs the steps (a) to (c) along the order of (a), (b), (c) for each of the intermediate code blocks in each of the bands while using the 1st to the 3rd bitmap data area in turn for each of the steps (a) to (c).
摘要:
A data processing apparatus includes a storage controller and a processor. The storage controller is configured to write a series of data blocks constituting a particular unit of data to a storage and read out the series of data blocks from the storage. The processor is further configured to generate a write-side process and a read-side process, notify the read-side process from the write-side process of an identifier of a storage area in the storage, cause the storage controller to sequentially write the series of data blocks to the storage area using the write-side process, and cause the storage controller to read the series of data blocks from the storage area corresponding to the identifier using the read-side process after the identifier is received in the read-side process.
摘要:
In a display region, pixel electrodes are arranged with a predetermined pitch in a matrix. Dummy pixel electrodes provided in a dummy display region surrounding the display region are formed from the same layer as the pixel electrodes, and are arranged in an island shape so as to have the same size and pitch as the pixel electrodes. The dummy pixel electrodes are connected to each other via a wire positioned under the pixel electrodes.
摘要:
In an electro-optical device, a liquid crystal element can be driven more appropriately.An electro-optical device 1 includes: a scanning line driving circuit 130 which, in a plurality of subfields sf1 to sf8 constituting a field, sequentially supplies scanning signals for causing selection transistors 116 to be in an ON state to a plurality of scanning lines 112 and selects a pixel 110 for each of the scanning lines 112; and a data line driving circuit 140 which writes a signal potential corresponding to an image to be displayed on a pixel electrode 118 of the pixel 110 selected by the scanning line driving circuit 130 via a plurality of data lines 114, in the writing of the signal potential, when it is assumed that a polarity of the signal potential with respect to a potential of an opposite electrode 119 is a writing polarity, reverses the writing polarity a plurality of times in the field, and writes the signal potential so that the writing polarities of the plurality of subfield periods constituting a given field are the reverse of the writing polarities of the plurality of subfields constituting the next field.
摘要:
An ink cartridge that is filled with ink and, used with the ink cartridge loaded into a printer includes a reservoir that reserves the ink, an outlet through which the ink is supplied to the printer with the ink cartridge loaded, at least one ink supply system that includes a channel that leads the ink from the reservoir to the outlet, and a sensor that detects whether the channel is filled with the ink or gas, an ink cartridge terminal that is electrically coupled to the sensor and makes contact with a printer terminal disposed on the printer upon loading of the ink cartridge. A detection region of the channel where detection is carried out by the sensor is previously filled with gas with the ink cartridge yet to be used. Whether or not the use of the ink cartridge is proper is determined based on information from the sensor.