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    Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination
    1.
    发明申请
    Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开
    具有降低粒子污染的半导体器件制造装置

    公开(公告)号：US20110100555A1

    公开(公告)日：2011-05-05

    申请号：US12987448

    申请日：2011-01-10

    申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    IPC分类号： C23F1/08 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44

    CPC分类号： C23C16/4401 ,  H01J37/32091 ,  H01J37/32678 ,  H01J2237/022

    摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.

    摘要翻译： 半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。 加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为 处理。 温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。

    WAFER EDGE CLEANER
    3.
    发明申请
    WAFER EDGE CLEANER 审中-公开

    公开(公告)号：US20080277061A1

    公开(公告)日：2008-11-13

    申请号：US11835463

    申请日：2007-08-08

    申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa ,  Kenetsu Yokogawa

    发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Masaru Izawa ,  Kenetsu Yokogawa

    IPC分类号： H01L21/306 ,  G06F19/00

    CPC分类号： H01L21/02087 ,  B08B7/0042 ,  H01L21/67028

    摘要： An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm2 in the peak power density.

    摘要翻译： 本发明的目的是提供一种晶片边缘清洁器，其能够以低成本和高产量去除附着在被处理物体的外周的不需要的材料。 根据本发明的晶片边缘清洁器用在其中的至少30kW / mm 2的激光束照射附着在待处理物体的后表面外周的沉积材料 峰值功率密度。

    Plasma processing apparatus
    4.
    发明申请
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US20060254717A1

    公开(公告)日：2006-11-16

    申请号：US11213737

    申请日：2005-08-30

    申请人： Hiroyuki Kobayashi ,  Masaru Izawa ,  Kenetsu Yokogawa ,  Tomoyuki Tamura ,  Kenji Maeda

    发明人： Hiroyuki Kobayashi ,  Masaru Izawa ,  Kenetsu Yokogawa ,  Tomoyuki Tamura ,  Kenji Maeda

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/32642 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32532 ,  H01L21/02087 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68707 ,  H01L21/68742

    摘要： A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.

    摘要翻译： 等离子体处理装置包括真空处理室，将处理气体导入真空处理室的供给单元，将真空室内的试样安装在真空处理室内的安装电极，以及将试样放置在 所述安装电极将所述试样保持在所述安装电极上，其中所述安装电极包括用于安装所述试样的内部区域，用于安装聚焦环的外部区域和用于向所述内部区域供电的高频电源， 外部区域，并且其中高频电力施加到外部区域，以在样本被推动销升高的同时在试样的背面的外边缘处产生等离子体。

    Plasma processing apparatus and method for venting the same to atmosphere
    5.
    发明授权
    Plasma processing apparatus and method for venting the same to atmosphere 有权
    等离子体处理装置和方法，用于将其排放到大气中

    公开(公告)号：US08029874B2

    公开(公告)日：2011-10-04

    申请号：US12035759

    申请日：2008-02-22

    申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    IPC分类号： H05H1/24

    CPC分类号： C23C16/4401

    摘要： In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.

    摘要翻译： 在设置有控制装置的等离子体处理装置中，气体供给装置包括用于通过淋浴板将排放气体供给到处理室中的第一气体供给路径和用于将排出气体供给到处理室中的第二气体供给路径， 并且控制装置能够调节第一和第二气体供给路径中的至少一个的排出气体的流量，使得淋浴板的背侧的压力成为压力 这是相对于处理室中的压力的​​正压力并且小于喷淋板的耐受压力。

    Plasma processing apparatus
    7.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US07767054B2

    公开(公告)日：2010-08-03

    申请号：US11213737

    申请日：2005-08-30

    申请人： Hiroyuki Kobayashi ,  Masaru Izawa ,  Kenetsu Yokogawa ,  Tomoyuki Tamura ,  Kenji Maeda

    发明人： Hiroyuki Kobayashi ,  Masaru Izawa ,  Kenetsu Yokogawa ,  Tomoyuki Tamura ,  Kenji Maeda

    IPC分类号： C23F1/00

    CPC分类号： H01J37/32642 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32532 ,  H01L21/02087 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/68707 ,  H01L21/68742

    摘要： A plasma processing apparatus includes a vacuum processing chamber, supplying means for introducing a processing gas into the vacuum processing chamber, a mounting electrode in the vacuum processing chamber for mounting a specimen on the mounting electrode, and a pusher pin for raising the specimen placed on the mounting electrode and holding the specimen over the mounting electrode, wherein the mounting electrode includes an inner area for mounting the specimen, an outer area for mounting a focus ring, and a high-frequency power source for supplying electric power to the inner area and the outer area, and wherein high-frequency electric power is applied to the outer area to generate plasma at the outer edge of the backside of the specimen while the specimen is raised with the pusher pin.

    摘要翻译： 等离子体处理装置包括真空处理室，将处理气体导入真空处理室的供给单元，将真空室内的试样安装在真空处理室内的安装电极，以及将试样放置在 所述安装电极将所述试样保持在所述安装电极上，其中所述安装电极包括用于安装所述试样的内部区域，用于安装聚焦环的外部区域和用于向所述内部区域供电的高频电源， 外部区域，并且其中高频电力施加到外部区域，以在样本被推动销升高的同时在试样的背面的外边缘处产生等离子体。

    Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination
    9.
    发明申请
    Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开
    具有降低粒子污染的半导体器件制造装置

    公开(公告)号：US20090294060A1

    公开(公告)日：2009-12-03

    申请号：US12539140

    申请日：2009-08-11

    申请人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    发明人： Hiroyuki Kobayashi ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Masaru Izawa

    IPC分类号： H01L21/465

    CPC分类号： C23C16/4401 ,  H01J37/32091 ,  H01J37/32678 ,  H01J2237/022

    摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.

    摘要翻译： 半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。 加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为 处理。 温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。