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公开(公告)号：US07298045B2
公开(公告)日：2007-11-20
申请号：US10995140
申请日：2004-11-24
IPC分类号： H01L23/34
CPC分类号： H01L24/97 , H01L24/73 , H01L24/92 , H01L25/0657 , H01L2224/05571 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/4824 , H01L2224/484 , H01L2224/49171 , H01L2224/73204 , H01L2224/73215 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06572 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1515 , H01L2924/15311 , H01L2924/15787 , H01L2924/1815 , H01L2924/19107 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2224/92247 , H01L2224/05599
摘要： A first semiconductor element and second semiconductor element are bonded via die-bonding material. A first electrode of the first semiconductor element and a third electrode are joined, by means of flip-chip bonding, to a semiconductor carrier that has the third electrode on the one face of the semiconductor carrier and a fourth electrode on the perimeter of the other face of the semiconductor carrier. The bonding pad of the second semiconductor element and the fourth electrode of the semiconductor carrier are connected via fine metal wire by means of wire bonding. The periphery of the first semiconductor element and the wiring portion of the fine metal wire are filled with insulating sealing resin between the semiconductor carrier and second semiconductor element and the sealing fill region for the sealing resin is formed substantially the same as the external dimensions of the second semiconductor element.
摘要翻译： 第一半导体元件和第二半导体元件通过芯片接合材料接合。 第一半导体元件的第一电极和第三电极通过倒装芯片接合连接到半导体载体，半导体载体在半导体载体的一个面上具有第三电极，在另一个半导体周边的周边连接第四电极 半导体载体的面。 第二半导体元件的焊盘和半导体载体的第四电极通过引线接合通过细金属线连接。 第一半导体元件的周边和细金属线的布线部分在半导体载体和第二半导体元件之间填充有绝缘密封树脂，并且用于密封树脂的密封填充区域形成为基本上与外部尺寸相同 第二半导体元件。
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公开(公告)号：US20050116353A1
公开(公告)日：2005-06-02
申请号：US10995140
申请日：2004-11-24
IPC分类号： H01L25/18 , H01L23/00 , H01L23/12 , H01L25/04 , H01L25/065 , H01L25/07 , H01L27/108
CPC分类号： H01L24/97 , H01L24/73 , H01L24/92 , H01L25/0657 , H01L2224/05571 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/4824 , H01L2224/484 , H01L2224/49171 , H01L2224/73204 , H01L2224/73215 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06572 , H01L2225/06586 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1515 , H01L2924/15311 , H01L2924/15787 , H01L2924/1815 , H01L2924/19107 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2224/92247 , H01L2224/05599
摘要： A first semiconductor element and second semiconductor element are bonded via die-bonding material. A first electrode of the first semiconductor element and a third electrode are joined, by means of flip-chip bonding, to a semiconductor carrier that has the third electrode on the one face of the semiconductor carrier and a fourth electrode on the perimeter of the other face of the semiconductor carrier. The bonding pad of the second semiconductor element and the fourth electrode of the semiconductor carrier are connected via fine metal wire by means of wire bonding. The periphery of the first semiconductor element and the wiring portion of the fine metal wire are filled with insulating sealing resin between the semiconductor carrier and second semiconductor element and the sealing fill region for the sealing resin is formed substantially the same as the external dimensions of the second semiconductor element.
摘要翻译： 第一半导体元件和第二半导体元件通过芯片接合材料接合。 第一半导体元件的第一电极和第三电极通过倒装芯片接合连接到半导体载体，半导体载体在半导体载体的一个面上具有第三电极，在另一个半导体周边的周边连接第四电极 半导体载体的面。 第二半导体元件的焊盘和半导体载体的第四电极通过引线接合通过细金属线连接。 第一半导体元件的周边和细金属线的布线部分在半导体载体和第二半导体元件之间填充有绝缘的密封树脂，并且用于密封树脂的密封填充区域形成为与外部尺寸基本相同 第二半导体元件。
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公开(公告)号：US08012869B2
公开(公告)日：2011-09-06
申请号：US12614170
申请日：2009-11-06
IPC分类号： H01L23/24
CPC分类号： H01L24/85 , H01L21/2007 , H01L21/563 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/81 , H01L2224/0401 , H01L2224/04042 , H01L2224/05644 , H01L2224/13099 , H01L2224/13124 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48455 , H01L2224/4847 , H01L2224/48599 , H01L2224/48644 , H01L2224/48699 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83102 , H01L2224/85 , H01L2224/85205 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2224/78 , H01L2924/00 , H01L2224/48744 , H01L2924/00015
摘要： An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.
摘要翻译： 通过将铝线压靠在硅电极上的楔形工具将铝线结合到硅电极。 以这种方式，通过依次层叠铝，氧化铝，氧化硅和硅来获得牢固结合的结构。
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公开(公告)号：US20070035035A1
公开(公告)日：2007-02-15
申请号：US11491029
申请日：2006-07-24
IPC分类号： H01L23/52
CPC分类号： H01L24/85 , H01L21/2007 , H01L21/563 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/81 , H01L2224/0401 , H01L2224/04042 , H01L2224/05644 , H01L2224/13099 , H01L2224/13124 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48455 , H01L2224/4847 , H01L2224/48599 , H01L2224/48644 , H01L2224/48699 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83102 , H01L2224/85 , H01L2224/85205 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2224/78 , H01L2924/00 , H01L2224/48744 , H01L2924/00015
摘要： An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.
摘要翻译： 通过将铝线压靠在硅电极上的楔形工具将铝线结合到硅电极。 以这种方式，通过依次层叠铝，氧化铝，氧化硅和硅来获得牢固结合的结构。
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公开(公告)号：US07629688B2
公开(公告)日：2009-12-08
申请号：US11491029
申请日：2006-07-24
IPC分类号： H01L23/48
CPC分类号： H01L24/85 , H01L21/2007 , H01L21/563 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/81 , H01L2224/0401 , H01L2224/04042 , H01L2224/05644 , H01L2224/13099 , H01L2224/13124 , H01L2224/16225 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48455 , H01L2224/4847 , H01L2224/48599 , H01L2224/48644 , H01L2224/48699 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83102 , H01L2224/85 , H01L2224/85205 , H01L2224/92125 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2224/78 , H01L2924/00 , H01L2224/48744 , H01L2924/00015
摘要： An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded structure is obtained by sequentially stacking aluminum, aluminum oxide, silicon oxide, and silicon.
摘要翻译： 通过将铝线压靠在硅电极上的楔形工具将铝线结合到硅电极。 以这种方式，通过依次层叠铝，氧化铝，氧化硅和硅来获得牢固结合的结构。
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公开(公告)号：US07495339B2
公开(公告)日：2009-02-24
申请号：US11544633
申请日：2006-10-10
IPC分类号： H01L23/52
CPC分类号： H01L24/10 , B23K20/004 , B23K20/10 , B23K35/002 , B23K35/0227 , B23K35/286 , B23K35/3601 , B23K2101/32 , B23K2101/40 , B23K2103/10 , B23K2103/18 , B23K2103/50 , B23K2103/56 , H01L21/563 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/13 , H01L2224/13099 , H01L2224/13124 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/4807 , H01L2224/48091 , H01L2224/48247 , H01L2224/48458 , H01L2224/4847 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/73203 , H01L2224/73204 , H01L2224/81205 , H01L2224/81801 , H01L2224/85205 , H01L2224/8582 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12032 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/0002
摘要： There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.
摘要翻译： 提供了Si电极（Si构件）和Al线（Al构件）之间的连接结构。 在Si电极和Al线之间，第一部分和第二部分呈中间关系。 第一和第二部分中的每一个与Si电极和Al线接触。 在第一部分中存在Si氧化物层和Al氧化物层。 Si氧化物层与Si电极接触。 Al氧化物层介于Si氧化物层和Al线之间。 在一些第二部分中，Al存在。 在第二部分的其它部分中，存在Si部分和Al部分。
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公开(公告)号：US20070187834A1
公开(公告)日：2007-08-16
申请号：US11544633
申请日：2006-10-10
CPC分类号： H01L24/10 , B23K20/004 , B23K20/10 , B23K35/002 , B23K35/0227 , B23K35/286 , B23K35/3601 , B23K2101/32 , B23K2101/40 , B23K2103/10 , B23K2103/18 , B23K2103/50 , B23K2103/56 , H01L21/563 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/81 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/05556 , H01L2224/13 , H01L2224/13099 , H01L2224/13124 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/4807 , H01L2224/48091 , H01L2224/48247 , H01L2224/48458 , H01L2224/4847 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/73203 , H01L2224/73204 , H01L2224/81205 , H01L2224/81801 , H01L2224/85205 , H01L2224/8582 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12032 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/0002
摘要： There is provided a connection structure between a Si electrode (Si member) and an Al wire (Al member). Between the Si electrode and the Al wire, a first part and second parts are present in interposed relation. Each of the first and second parts is in contact with the Si electrode and with the Al wire. In the first part, a Si oxide layer and an Al oxide layer are present. The Si oxide layer is in contact with the Si electrode. The Al oxide layer is interposed between the Si oxide layer and the Al wire. In some of the second parts, Al is present. In the others of the second parts, a Si portion and an Al portion are present.
摘要翻译： 提供了Si电极（Si构件）和Al线（Al构件）之间的连接结构。 在Si电极和Al线之间，第一部分和第二部分呈中间关系。 第一和第二部分中的每一个与Si电极和Al线接触。 在第一部分中存在Si氧化物层和Al氧化物层。 Si氧化物层与Si电极接触。 Al氧化物层介于Si氧化物层和Al线之间。 在一些第二部分中，Al存在。 在第二部分的其它部分中，存在Si部分和Al部分。
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