公开(公告)号：US20130149467A1

公开(公告)日：2013-06-13

申请号：US13467324

申请日：2012-05-09

申请人： Hitoshi KATO ,  Katsuyuki Hishiya ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo ,  Shigenori Ozaki

发明人： Hitoshi KATO ,  Katsuyuki Hishiya ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo ,  Shigenori Ozaki

IPC分类号： C23C16/54

CPC分类号： C23C16/54 ,  C23C16/4554 ,  H01J37/321

摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

摘要翻译： 一种成膜装置包括：第一和第二气体依次供给多次的真空室，包括具有接收区域的第一表面和旋转真空室内部的接收区域的旋转台，第一部分供应第一气体 在第一区域中，第二部分经由分离区域将第二气体供给到沿着旋转台的周向方向与第一区域分离的第二区域;等离子体气体部分，其将等离子体产生气体供应到真空中的等离子体区域中 天线，面向旋转台的第一表面的天线，并通过电感耦合从等离子体空间内的等离子体产生气体产生等离子体，并且法拉第屏蔽层接地并设置在天线和等离子体空间之间，并且包括在方向 垂直于天线相交。

公开(公告)号：US09932674B2

公开(公告)日：2018-04-03

申请号：US13467324

申请日：2012-05-09

申请人： Hitoshi Kato ,  Katsuyuki Hishiya ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo ,  Shigenori Ozaki

发明人： Hitoshi Kato ,  Katsuyuki Hishiya ,  Hiroyuki Kikuchi ,  Shigehiro Ushikubo ,  Shigenori Ozaki

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23C16/54 ,  H01J37/32 ,  C23C16/455

CPC分类号： C23C16/54 ,  C23C16/4554 ,  H01J37/321

摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

公开(公告)号：US08642487B2

公开(公告)日：2014-02-04

申请号：US13471587

申请日：2012-05-15

申请人： Hitoshi Kato ,  Shigehiro Ushikubo ,  Tatsuya Tamura ,  Shigenori Ozaki ,  Takeshi Kumagai ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Shigehiro Ushikubo ,  Tatsuya Tamura ,  Shigenori Ozaki ,  Takeshi Kumagai ,  Hiroyuki Kikuchi

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/4554 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32779 ,  H01L21/02164 ,  H01L21/0228

摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

摘要翻译： 一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到 反应产物。

公开(公告)号：US08961735B2

公开(公告)日：2015-02-24

申请号：US13425872

申请日：2012-03-21

申请人： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

发明人： Yutaka Fujino ,  Atsushi Ueda ,  Shigenori Ozaki ,  Junichi Kitagawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32201 ,  C23C16/511 ,  H01J37/32211 ,  H01J37/32238 ,  H01J37/32431 ,  H05H1/46 ,  H05H2001/463

摘要： A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

摘要翻译： 等离子体处理装置包括将微波引入处理室的微波引入装置。 微波引入装置包括多个安装在天花板的多个开口中的微波透射板。 微波传输板布置在平行于安装台的安装表面的一个虚拟平面上，其中微波传输板安装在相应的开口中。 微波透射板包括第一至第三微波透射板。 第一至第三微波透射板以这样的方式布置，使得第一微波透射窗口的中心点与第二微波透射窗口的中心点之间的距离变为等于或近似等于第二微波透射窗口的中心点之间的距离 第一微波发射窗口和第三微波发射窗口的中心点。

公开(公告)号：US08021987B2

公开(公告)日：2011-09-20

申请号：US12632131

申请日：2009-12-07

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/38 ,  H01L21/469

CPC分类号： H01L21/02112 ,  H01L21/0234 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L29/518 ,  H01L29/78

摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

摘要翻译： 通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。 通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

公开(公告)号：US20100096707A1

公开(公告)日：2010-04-22

申请号：US12647902

申请日：2009-12-28

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/3185 ,  Y10T428/12736 ,  Y10T428/12806

摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

摘要翻译： 在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性 原理。 通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。 此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

公开(公告)号：US20050176263A1

公开(公告)日：2005-08-11

申请号：US11068933

申请日：2005-03-02

申请人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

发明人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L29/51 ,  H01L21/469

CPC分类号： C23C16/56 ,  C23C16/401 ,  C23C16/402 ,  H01J37/3222 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/76826 ,  H01L21/76828 ,  H01L29/517 ,  H01L29/518

摘要： A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.

摘要翻译： 一种制造高品质MOS型半导体的电子器件材料的方法，包括绝缘层和电特性优异的半导体层。 该方法包括：将包含单晶硅作为主要成分的待处理衬底进行CVD处理，从而形成绝缘层; 以及通过经由具有多个狭缝的平面天线构件基于微波照射从处理气体产生的等离子体曝光被处理基板的步骤，由此通过使用由此产生的等离子体来修正绝缘膜 。

公开(公告)号：US07622402B2

公开(公告)日：2009-11-24

申请号：US10509371

申请日：2003-03-31

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama ,  Kazuhide Hasebe ,  Shigeru Nakajima ,  Tomonori Fujiwara

IPC分类号： H01L21/31

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/31662 ,  H01L28/56 ,  H01L29/517 ,  H01L29/518

摘要： The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.

摘要翻译： 基于包含至少含氧原子气体的工艺气体，等离子体照射设置在电子器件基板上的绝缘膜的表面，从而在绝缘膜和电子器件基板之间的界面处形成下面的膜。 在绝缘膜和电子器件基板之间的界面处提供了良好的底层膜，从而使得这样形成的底膜能够提高绝缘膜的性能。

公开(公告)号：US20080274370A1

公开(公告)日：2008-11-06

申请号：US12145971

申请日：2008-06-25

申请人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

发明人： Takuya Sugawara ,  Yoshihide Tada ,  Genji Nakamura ,  Shigenori Ozaki ,  Toshio Nakanishi ,  Masaru Sasaki ,  Seiji Matsuyama

IPC分类号： B32B15/00 ,  B32B15/20

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3165 ,  H01L21/3185 ,  Y10T428/12736 ,  Y10T428/12806

摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

摘要翻译： 在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性 原理。 通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。 此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

公开(公告)号：US20070218687A1

公开(公告)日：2007-09-20

申请号：US11798029

申请日：2007-05-09

申请人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

发明人： Takuya Sugawara ,  Toshio Nakanishi ,  Shigenori Ozaki ,  Seiji Matsuyama ,  Shigemi Murakawa ,  Yoshihide Tada

IPC分类号： H01L21/44

CPC分类号： H01L21/28185 ,  C23C16/401 ,  C23C16/402 ,  C23C16/56 ,  H01J37/3222 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76828 ,  H01L29/40114 ,  H01L29/517 ,  H01L29/518

摘要： A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.

摘要翻译： 一种制造高品质MOS型半导体的电子器件材料的方法，包括绝缘层和电特性优异的半导体层。 该方法包括：将包含单晶硅作为主要成分的待处理衬底进行CVD处理，从而形成绝缘层; 以及通过经由具有多个狭缝的平面天线构件基于微波照射从处理气体产生的等离子体曝光被处理基板的步骤，由此通过使用由此产生的等离子体来修正绝缘膜 。