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98 条记录 (耗时 0.039 秒)

    ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES
    3.
    发明申请
    ENGINEERING EMISSION WAVELENGTHS IN LASER AND LIGHT EMITTING DEVICES 有权
    在激光和发光器件中的工程辐射波长

    公开(公告)号：US20110316018A1

    公开(公告)日：2011-12-29

    申请号：US12821643

    申请日：2010-06-23

    申请人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    发明人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    IPC分类号： H01L33/02 ,  H01L33/00

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3403 ,  H01S5/34333

    摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

    摘要翻译： 提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。 至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。 所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。 所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

    Microphotonic waveguide including core/cladding interface layer
    4.
    发明授权
    Microphotonic waveguide including core/cladding interface layer 有权
    微波导管包括芯/包层界面层

    公开(公告)号：US07831123B2

    公开(公告)日：2010-11-09

    申请号：US11899234

    申请日：2007-09-05

    申请人： Daniel K. Sparacin ,  Anuradha M. Agarwal ,  Pradip K. Roy ,  Lionel C. Kimerling

    发明人： Daniel K. Sparacin ,  Anuradha M. Agarwal ,  Pradip K. Roy ,  Lionel C. Kimerling

    IPC分类号： G02B6/10

    CPC分类号： G02B6/132 ,  G02B6/122 ,  G02B6/1223 ,  G02B2006/12097 ,  G02B2006/121 ,  G02B2006/12169 ,  G02B2006/12176

    摘要： The invention provides a waveguide with a waveguide core having longitudinal sidewall surfaces, a longitudinal top surface, and a longitudinal bottom surface that is disposed on a substrate. An interface layer is disposed on at least one longitudinal sidewall surface of the waveguide core. A waveguide cladding layer is disposed on at least the waveguide core sidewall and top surfaces, over the interface layer. The waveguide of the invention can be produced by forming a waveguide undercladding layer on a substrate, and then forming a waveguide core on the undercladding layer. An interface layer is then formed on at least a longitudinal sidewall surface of the waveguide core, and an upper cladding layer is formed on a longitudinal top surface and on longitudinal sidewall surfaces of the waveguide core, over the interface layer.

    摘要翻译： 本发明提供一种具有波导芯的波导，波导芯具有纵向侧壁表面，纵向顶表面和设置在基底上的纵向底表面。 界面层设置在波导芯的至少一个纵向侧壁表面上。 至少在波导芯侧壁和顶表面上，在界面层上设置波导覆层。 本发明的波导可以通过在基板上形成波导管下封层，然后在下封层上形成波导芯来制造。 然后在波导芯的至少纵向侧壁表面上形成界面层，并且在该界面层上的纵向顶表面和波导芯的纵向侧壁表面上形成上覆层。

    Energy coupled superlattice structures for silicon based lasers and modulators
    6.
    发明授权
    Energy coupled superlattice structures for silicon based lasers and modulators 有权
    用于硅基激光器和调制器的能量耦合超晶格结构

    公开(公告)号：US07738756B2

    公开(公告)日：2010-06-15

    申请号：US11490961

    申请日：2006-07-21

    申请人： Luca Dal Negro ,  Jae Hyung Yi ,  Lionel C. Kimerling

    发明人： Luca Dal Negro ,  Jae Hyung Yi ,  Lionel C. Kimerling

    IPC分类号： G02B6/10

    CPC分类号： H01S3/0632 ,  G02B6/12004 ,  H01S3/0637 ,  H01S3/1603 ,  H01S3/1608 ,  H01S3/1628 ,  H01S3/17

    摘要： A waveguide structure includes a SOI substrate. A core structure is formed on the SOI substrate comprising a plurality of multilayers having alternating or aperiodically distributed thin layers of either Si-rich oxide (SRO), Si-rich nitride (SRN) or Si-rich oxynitride (SRON). The multilayers are doped with a rare earth material so as to extend the emission range of the waveguide structure to the near infrared region. A low index cladding includes conductive oxides to act as electrodes.

    摘要翻译： 波导结构包括SOI衬底。 在包括多个具有富Si氧化物（SRO），富Si的氮化物（SRN）或富Si氧氮化物（SRON）的交替或非周期分布的薄层的多层的SOI衬底上形成芯结构。 多层掺杂有稀土材料，以将波导结构的发射范围扩展到近红外区域。 低折射率包层包括用作电极的导电氧化物。

    Photodiode
    7.
    发明授权
    Photodiode 有权
    光电二极管

    公开(公告)号：US07659627B2

    公开(公告)日：2010-02-09

    申请号：US11950795

    申请日：2007-12-05

    申请人： Yukiya Miyachi ,  Wojciech P. Giziewicz ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Yukiya Miyachi ,  Wojciech P. Giziewicz ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： H01L29/41

    CPC分类号： H01L27/1446 ,  H01L31/022408 ,  H01L31/085

    摘要： A photodiode balanced in increased sensitivity and speed. The photodiode includes a semiconductor substrate, an active region formed on the semiconductor substrate, and a comb electrode connected to the active region. The comb electrode includes a plurality of electrode fingers, and each of the electrode fingers includes a transparent electrode contacting the active region, and an opaque electrode formed on the transparent electrode. Here, the width of the opaque electrode is set smaller than the width of the transparent electrode.

    摘要翻译： 光敏二极管平衡灵敏度和速度提高。 光电二极管包括半导体衬底，形成在半导体衬底上的有源区和连接到有源区的梳状电极。 梳状电极包括多个电极指，并且每个电极指包括与活性区接触的透明电极和形成在透明电极上的不透明电极。 这里，不透明电极的宽度被设定为小于透明电极的宽度。

    Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches
    9.
    发明申请
    Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches 审中-公开
    通过顺序热退火方法从硅基纳米晶体的光发射

    公开(公告)号：US20090093074A1

    公开(公告)日：2009-04-09

    申请号：US12137224

    申请日：2008-06-11

    申请人： Jae Hyung Yi ,  Luca Dal Negro ,  Lionel C. Kimerling

    发明人： Jae Hyung Yi ,  Luca Dal Negro ,  Lionel C. Kimerling

    IPC分类号： H01L21/28

    CPC分类号： H05B33/10 ,  B82Y30/00 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.

    摘要翻译： 一种用于增强光致发光的方法包括提供设置在衬底上的膜，所述膜包括半导体和电介质材料中的至少一种。 当使用SiO 2和SiN x或富Si氧化物的薄膜层时，可以通过生长后处理热退火来激发发光。 在处理室或退火炉中的第一温度下进行第一退火步骤; 之后，在处理室或退火炉中，在第二温度下进行第二退火工序。 第二温度大于第一温度，第二退火步骤后的膜的光致发光比没有第一退火步骤的膜的光致发光大。

    Partial confinement photonic crystal waveguides
    10.
    发明授权
    Partial confinement photonic crystal waveguides 有权
    局部约束光子晶体波导

    公开(公告)号：US07480430B2

    公开(公告)日：2009-01-20

    申请号：US11349761

    申请日：2006-02-08

    申请人： Sajan Saini ,  Jurgen Michel ,  Dong Pan ,  Wojciech Giziewicz ,  Lionel C. Kimerling

    发明人： Sajan Saini ,  Jurgen Michel ,  Dong Pan ,  Wojciech Giziewicz ,  Lionel C. Kimerling

    IPC分类号： G02B6/26

    CPC分类号： H01L29/768

    摘要： An optical waveguide structure includes an air-via region that receives an optical signal from an optical source. A photonic crystal cladding region is formed on the surface of the air-via region. The photonic crystal cladding region confines the optical signal within the air-via region and propagates the optical signal along the axial direction while ensuring near complete transmission of the optical signal.

    摘要翻译： 光波导结构包括从光源接收光信号的通气区域。 在透气区域的表面上形成光子晶体包层区域。 光子晶体覆盖区域将光信号限制在通气区域内，并且沿着轴向传播光信号，同时确保光信号的接近完全传输。