摘要:
A method for fabricating a thin film transistor array and driving circuit comprising the steps of: providing a substrate; patterning a polysilicon layer and an N+ thin film over the substrate to form a plurality of islands; patterning the islands to form P+ doped regions; patterning out source/drain terminals and the lower electrode of a storage capacitor; etching back the N+ thin film; patterning out a gate and the upper electrode of the storage capacitor and patterning a passivation layer and a conductive layer to form pixel electrodes and a wiring layout.
摘要:
The invention provides a nonvolatile memory apparatus. The nonvolatile memory apparatus comprises a plurality of memory cells and a signal generator. The memory cells are arranged in an array, and each of the memory cells has a control gate terminal, a floating gate, a source line terminal, a bit-line terminal, a selected gate terminal and a word-line terminal. The signal generator is coupled to the memory cells. When the nonvolatile memory apparatus executes a programming operation, the signal generator provides a programming signal to the control gate terminals of a plurality of inhibited memory cells among the memory cells. Wherein, the programming signal is a pulse signal with a direct-current (DC) offset voltage.
摘要:
An erasable programmable single-poly nonvolatile memory includes a floating gate transistor having a floating gate, a gate oxide layer under the floating gate, and a channel region; and an erase gate region, wherein the floating gate is extended to and is adjacent to the erase gate region. The gate oxide layer comprises a first portion above the channel region of the floating gate transistor and a second portion above the erase gate region, and a thickness of the first portion of the gate oxide layer is different from a thickness of the second portion of the gate oxide layer.
摘要:
An erasable programmable single-poly nonvolatile memory includes a first PMOS transistor comprising a select gate, a first p-type doped region, and a second p-type doped region, wherein the select gate is connected to a select gate voltage, and the first p-type doped region is connected to a source line voltage; a second PMOS transistor comprising the second p-type doped region, a third p-type doped region, and a floating gate, wherein the third p-type doped region is connected to a bit line voltage; and an erase gate region adjacent to the floating gate, wherein the erase gate region is connected to an erase line voltage.
摘要:
The present invention provides a versatile flower container includes a base, a top cover, a carrying container placing on the top of top cover and a sensing device placing in the base, the carrying container has a concave space can be used to accommodate the sponge, floral and water, the sensing device includes an electronic control panel, two humidity detection rod, a number of lamps and speakers, the two humidity detection rods are through the top cover and inserting into the sponge in the concave space, thereby they can detect the humidity values of the sponge, the lamps and the speaker can be activated to produce light and sound and then generate warning effect when the humidity values are not enough in the carrying container.
摘要:
A one-time-programmable memory device comprises a one-time-programmable memory cell array, a voltage pumping circuit, and a programming verification circuit. The one-time-programmable memory cell array comprises a plurality of memory cells. Each memory cell is arranged at an intersection of a bit line and a word line. The voltage pumping circuit comprises a plurality of local voltage boost circuits. Each local voltage boost circuit is shared by a corresponding memory cell of the plurality of memory cells. The programming verification circuit is coupled to the one-time-programmable memory cell array for verifying that conduction current of programmed memory cells of the plurality of memory cells is greater than a predetermined current level after programming. Each local boost circuit isolates leakage current of a corresponding programmed memory cell, and prevents programming voltage failure due to current overloading at a corresponding voltage pumping circuit.
摘要:
A non-volatile memory disposed in a SOI substrate is provided. The non-volatile memory includes a memory cell and a first conductive type doped region. The memory cell includes a gate, a charge storage structure, a bottom dielectric layer, a second conductive type drain region, and a second conductive type source region. The gate is disposed on the SOI substrate. The charge storage structure is disposed between the gate and the SOI substrate. The bottom dielectric layer is disposed between the charge storage layer and the SOI substrate. The second conductive type drain region and the second conductive type source region are disposed in a first conductive type silicon body layer next to the two sides of the gate. The first conductive type doped region is disposed in the first conductive type silicon body layer and electrically connected to the first conductive type silicon body layer beneath the gate.
摘要:
A single-poly SOI memory cell includes a PMOS select transistor serially connected with a floating-gate PMOS transistor on an SOI substrate. The PMOS select transistor includes a select gate, a P+ source region and a P+ drain/source region. The floating-gate PMOS transistor includes a floating gate, a P+ drain region and the P+ drain/source region, wherein the P+ drain/source region is shared by the PMOS select transistor and the floating-gate PMOS transistor. A floating first N+ doping region is disposed within the P+ drain/source region. The first N+ doping region, which is adjacent to the floating gate, acts as a source-tie pick-up.
摘要:
A non-volatile single-poly memory device is disclosed. The non-volatile single-poly memory device includes two mirror symmetric unit cells, which is capable of providing improved data correctness. Further, the non-volatile single-poly memory device is operated at low voltages and is fully compatible with logic processes.
摘要:
A non-volatile memory formed on a first conductive type substrate is provided. The non-volatile memory includes a gate, a second conductive type drain region, a charge storage layer, and a second conductive type first lightly doped region. The gate is formed on the first conductive type substrate. The second conductive type drain region is formed in the first conductive type substrate at the first side of the gate. The charge storage layer is formed on the first conductive type substrate at the first side of the gate and between the second conductive type drain region and the gate. The second conductive type first lightly doped region is formed in the first conductive type substrate at the second side of the gate. The second side is opposite to the first side.