公开(公告)号：US20090140843A1

公开(公告)日：2009-06-04

申请号：US12256147

申请日：2008-10-22

申请人： Hyo Chan BANG ,  Jee Sook EUN ,  Se Won OH ,  Jae Heum LEE ,  Jong-Hyun PARK ,  Hyung-Jin AHN ,  Kwang-Hoon KIM

发明人： Hyo Chan BANG ,  Jee Sook EUN ,  Se Won OH ,  Jae Heum LEE ,  Jong-Hyun PARK ,  Hyung-Jin AHN ,  Kwang-Hoon KIM

IPC分类号： H04Q5/22

CPC分类号： G06F9/545 ,  G06F9/541

摘要： The present invention relates to an RFID application interface method and a system thereof. In the present invention, an RFID middleware system changes a control request input from a user or an RFID application system according to a communication protocol of an RFID device to be controlled, and sends it to the RFID device. Also, when the user or the RFID application system inputs a data process policy that is common to various RFID devices of a logical RFID device group, the RFID middleware system generates data process rules that are suitable for communication capability and data processing capability of each RFID device based on the data process policy and provides an interface that allows processing of data by a corresponding RFID device. In addition, the RFID middle system defines a procedural flow of at least one of services and at least one of tasks that constitute an RFID business process and provides an interface to support interconnection and cooperation of services that are included in the RFID business process.

摘要翻译： 本发明涉及一种RFID应用接口方法及其系统。 在本发明中，RFID中间件系统根据要控制的RFID装置的通信协议改变来自用户或RFID应用系统的控制请求，并将其发送给RFID装置。 此外，当用户或RFID应用系统输入逻辑RFID设备组的各种RFID设备共有的数据处理策略时，RFID中间件系统生成适合于每个RFID的通信能力和数据处理能力的数据处理规则 基于数据处理策略的设备，并提供允许由相应RFID设备处理数据的接口。 另外，RFID中间系统定义了至少一个服务的程序流程，以及构成RFID业务流程的任务中的至少一个，并且提供了支持RFID业务流程中包括的服务的互连和协作的接口。

公开(公告)号：US20090134974A1

公开(公告)日：2009-05-28

申请号：US12176661

申请日：2008-07-21

申请人： Se Won OH ,  Hyo Chan BANG ,  Yong Joon LEE ,  Jong-Hyun PARK

发明人： Se Won OH ,  Hyo Chan BANG ,  Yong Joon LEE ,  Jong-Hyun PARK

IPC分类号： H04Q5/22

CPC分类号： G06K7/0008

摘要： An apparatus for managing a plurality of RFID readers includes a service policy managing unit that defines demands in the form of service policies to be understood by the plurality of RFID readers, a data processing rule managing unit that generates a data processing rule on the basis of the service policies, a collected data processing unit that receives a plurality of RFID tag data from the plurality of RFID readers, and generates integrated RFID events by applying the data processing rule to the plurality of RFID tag data, and a service report processing unit that provides results corresponding to the integrated RFID events.

摘要翻译： 一种用于管理多个RFID读取器的装置，包括：服务策略管理单元，其定义要由多个RFID读取器理解的服务策略的形式的需求;数据处理规则管理单元，其基于以下步骤生成数​​据处理规则 服务策略，收集的数据处理单元，其从多个RFID读取器接收多个RFID标签数据，并通过将数据处理规则应用于多个RFID标签数据来生成集成的RFID事件;以及服务报告处理单元， 提供与集成RFID事件相对应的结果。

公开(公告)号：US20170104000A1

公开(公告)日：2017-04-13

申请号：US15291662

申请日：2016-10-12

申请人： Joo-Hee PARK ,  Jong-Min LEE ,  Seon-Kyung KIM ,  Kee-Jeong RHO ,  Jin-hyun SHIN ,  Jong-Hyun PARK ,  Jin-Yeon WON

发明人： Joo-Hee PARK ,  Jong-Min LEE ,  Seon-Kyung KIM ,  Kee-Jeong RHO ,  Jin-hyun SHIN ,  Jong-Hyun PARK ,  Jin-Yeon WON

IPC分类号： H01L27/115 ,  H01L23/528

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

摘要： A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that vertical to a top surface of the substrate, a plurality of gate lines and a conductive line on the substrate. The gate lines are stacked on top of each other. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction. The conductive line cuts the gate lines along the first direction. A width of the conductive line is periodically and repeatedly changed.

公开(公告)号：US20160268287A1

公开(公告)日：2016-09-15

申请号：US15047882

申请日：2016-02-19

申请人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Dae-Seok BYEON

发明人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Dae-Seok BYEON

IPC分类号： H01L27/115 ,  H01L29/792

CPC分类号： H01L27/11575 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： A semiconductor device includes a substrate including cell and dummy regions, first channel structures on the cell region and extending in a first direction vertical with respect to the substrate, gate lines surrounding outer sidewalls of the first channel structures and extending in a second direction parallel to the substrate, the gate lines being spaced apart from each other along the first direction, cutting lines between the gate lines on the cell region and extending in the second direction, dummy patterns spaced apart from each other along the first direction on the dummy region, the dummy patterns having a stepped shape along a third direction parallel to the top surface of the substrate and perpendicular to the second direction, at least a portion of the dummy patterns including a same conductive material as that in the gate lines, and dummy lines through the dummy patterns.

摘要翻译： 一种半导体器件包括：包括单元和虚设区域的基板，单元区域上的第一通道结构，并且相对于基板垂直于第一方向延伸;栅极线，其围绕第一通道结构的外侧壁延伸，并且沿第二方向平行延伸 所述基板，所述栅极线沿着所述第一方向彼此间隔开，在所述单元区域上的所述栅极线之间切割并沿所述第二方向延伸，在所述虚拟区域上沿着所述第一方向彼此间隔开的虚拟图案， 所述虚拟图案沿着与所述基板的顶面平行且垂直于所述第二方向的第三方向具有台阶状，所述虚设图案的至少一部分包括与所述栅极线相同的导电性材料， 虚拟模式。

公开(公告)号：US20110148584A1

公开(公告)日：2011-06-23

申请号：US12825561

申请日：2010-06-29

申请人： KYONG HEE LEE ,  Ju Wan KIM ,  Hae Won SON ,  Gwang Ja JIN ,  Jeong-Ho PARK ,  Seung Yong LEE ,  Kyoung-Wook MIN ,  Jong-Hyun PARK

发明人： KYONG HEE LEE ,  Ju Wan KIM ,  Hae Won SON ,  Gwang Ja JIN ,  Jeong-Ho PARK ,  Seung Yong LEE ,  Kyoung-Wook MIN ,  Jong-Hyun PARK

IPC分类号： H04Q5/22

CPC分类号： G06K19/0723

摘要： A method includes: placing a Radio Frequency Identification (RFID) tag for underground use under a ground surface, wherein a ground plate which has a diameter greater than that of the RFID tag or a tag antenna and on a top of which the RFID tag is mounted is placed underground such that the RFID tag protrudes above the ground surface or a bottom of the RFID tag is aligned with the ground surface.

摘要翻译： 一种方法包括：在地面下放置用于地下使用的射频识别（RFID）标签，其中直径大于RFID标签或标签天线的直径的接地板，并且其顶部上的RFID标签是 安装在地下，使得RFID标签突出在地面上方或RFID标签的底部与地面对齐。

公开(公告)号：US20110084276A1

公开(公告)日：2011-04-14

申请号：US12753732

申请日：2010-04-02

申请人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

发明人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78609 ,  H01L29/78618

摘要： A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

摘要翻译： 公开了一种薄膜晶体管（TFT）及其制造方法。 TFT包括衬底，设置在衬底上的栅电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上方并包括多晶硅（poly-Si）层的半导体层，设置的欧姆接触层 超过半导体层的预定区域，设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层，以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此，当控制底栅型TFT的截止电流时，可以通过简单的处理来防止由漏电流引起的特性的劣化。

公开(公告)号：US20100137001A1

公开(公告)日：2010-06-03

申请号：US12582570

申请日：2009-10-20

申请人： Youngsu CHO ,  Byung Doo KIM ,  Seong Yun CHO ,  Sung Jo YUN ,  Sun-Joong KIM ,  Wan Sik CHOI ,  Jong-Hyun PARK

发明人： Youngsu CHO ,  Byung Doo KIM ,  Seong Yun CHO ,  Sung Jo YUN ,  Sun-Joong KIM ,  Wan Sik CHOI ,  Jong-Hyun PARK

IPC分类号： H04W24/00 ,  H04B1/38

CPC分类号： H04W48/20 ,  H04W64/00 ,  H04W88/06 ,  Y02D70/122 ,  Y02D70/14

摘要： The present invention relates to a terminal and a terminal location providing method. The terminal for selectively accessing a plurality of base stations supporting different communication systems includes a first network interface card that is turned on when the terminal is turned on, a second network interface card that is turned on or activated when receiving the terminal's location information request, a power controller for controlling power of the first and second network interface cards, and a processor for receiving the terminal's location information request and controlling the power of the first and second network interface cards through the power controller.

摘要翻译： 本发明涉及终端和终端位置提供方法。 用于选择性地访问支持不同通信系统的多个基站的终端包括当终端被接通时被接通的第一网络接口卡，当接收终端的位置信息请求时被接通或激活的第二网络接口卡， 用于控制第一和第二网络接口卡的电力的功率控制器，以及用于接收终端的位置信息请求并通过功率控制器控制第一和第二网络接口卡的电力的处理器。

公开(公告)号：US20090113232A1

公开(公告)日：2009-04-30

申请号：US12163487

申请日：2008-06-27

申请人： Dong-Hwan PARK ,  Yong Joon LEE ,  Jong-Hyun PARK ,  Sun Yang KIM ,  Kyung Won NAM ,  Myung Ae LEE ,  In Kyo HAN

发明人： Dong-Hwan PARK ,  Yong Joon LEE ,  Jong-Hyun PARK ,  Sun Yang KIM ,  Kyung Won NAM ,  Myung Ae LEE ,  In Kyo HAN

IPC分类号： G06F11/07 ,  G06F15/173

CPC分类号： H04L41/0893 ,  H04L41/0654 ,  H04L67/12 ,  H04W24/04 ,  H04W84/18

摘要： An apparatus for managing a plurality of wireless sensor networks selects a configuring policy according to a characteristic of each wireless sensor network and configures a network with the selected configuring policy for management. When an error occurs in the wireless sensor network, the apparatus performs error diagnosis based on a configuring policy applied to the error-detected wireless sensor network, infers a cause of the error, and provides an error recovery method corresponding to the inferred cause of the error to the error-detected wireless sensor network.

摘要翻译： 用于管理多个无线传感器网络的装置根据每个无线传感器网络的特性来选择配置策略，并使用所选择的配置策略配置网络以进行管理。 当无线传感器网络发生错误时，设备根据应用于错误检测的无线传感器网络的配置策略进行错误诊断，推测出错误的原因，并提供与推断的原因相对应的错误恢复方法 错误检测无线传感器网络的错误。

公开(公告)号：US20130292651A1

公开(公告)日：2013-11-07

申请号：US13676707

申请日：2012-11-14

申请人： Chun-Gi YOU ,  Joon-Hoo CHOI ,  Jong-Hyun PARK ,  Kyung-Hoon PARK ,  Jeong-Hwan KIM ,  Seong-Kweon HEO

发明人： Chun-Gi YOU ,  Joon-Hoo CHOI ,  Jong-Hyun PARK ,  Kyung-Hoon PARK ,  Jeong-Hwan KIM ,  Seong-Kweon HEO

IPC分类号： H01L51/50

CPC分类号： H01L51/5092 ,  H01L27/3248 ,  H01L27/326 ,  H01L27/3265 ,  H01L51/5206 ,  H01L51/5212 ,  H01L2251/5392

摘要： The organic light emitting display apparatus includes a substrate; a buffer film on the substrate, the buffer film including a via hole, a thin film transistor (TFT) on the buffer film, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first electrode electrically connected to one of the source electrode and the drain electrode and corresponding to the via hole; an intermediate layer on the first electrode, the intermediate layer including an organic emission layer, and a second electrode on the intermediate layer.

摘要翻译： 有机发光显示装置包括：基板; 衬底上的缓冲膜，缓冲膜包括通孔，缓冲膜上的薄膜晶体管（TFT），包括有源层的TFT，栅电极，源电极和漏电极，第一电极 电连接到源电极和漏电极中的一个并对应于通孔; 所述第一电极上的中间层，所述中间层包括有机发射层，以及在所述中间层上的第二电极。

公开(公告)号：US20130270538A1

公开(公告)日：2013-10-17

申请号：US13898186

申请日：2013-05-20

申请人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

发明人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

IPC分类号： H01L51/52 ,  H01L29/786

CPC分类号： H01L51/5281 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/66765 ,  H01L29/78678

摘要： A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

摘要翻译： 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。