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    COMPOSITION COMPRISING EUPATORIUM SPP. EXTRACT AS ACTIVE INGREDIENT FOR PREVENTING AND TREATING OBESITY AND METABOLIC BONE DISEASE
    1.
    发明申请
    COMPOSITION COMPRISING EUPATORIUM SPP. EXTRACT AS ACTIVE INGREDIENT FOR PREVENTING AND TREATING OBESITY AND METABOLIC BONE DISEASE 审中-公开
    包含EUPATORIUM SPP的组合物。 提取物作为预防和治疗肥胖和代谢性骨髓疾病的主要成分

    公开(公告)号：US20150157675A1

    公开(公告)日：2015-06-11

    申请号：US14389957

    申请日：2012-04-02

    申请人： Hyun Seok Kim ,  Ki Moon Park ,  Min Ji Kim ,  Youngmin Lee ,  Haeng Ran Kim ,  Kang Jin Cho

    发明人： Hyun Seok Kim ,  Ki Moon Park ,  Min Ji Kim ,  Youngmin Lee ,  Haeng Ran Kim ,  Kang Jin Cho

    IPC分类号： A61K36/28 ,  A23L2/52 ,  A61K9/48 ,  A23L1/30 ,  A61K9/14 ,  A61K9/20

    CPC分类号： A61K36/28 ,  A23L2/52 ,  A23L33/105 ,  A23V2002/00 ,  A61K9/14 ,  A61K9/20 ,  A61K9/48 ,  A23V2200/332 ,  A23V2250/156 ,  A23V2250/21 ,  A23V2250/702 ,  A23V2250/704 ,  A23V2250/708 ,  A23V2250/72

    摘要： The present invention relates to a Eupatorium spp. extract having anti-obesity effects as a result of decreasing adipocytes and increasing osteoblasts, as well as the effects of preventing bone disease or fractures by increasing osteoblasts and of preventing osteoporosis by decreasing adipocytes and increasing osteoblasts by the same proportion in mesenchymal stem cells. DCM fraction layers of a Eupatorium spp. stem extract collected on a monthly basis and Eupatorium spp. stem extract collected only in September may inhibit the activity of PPARγ, AP2, CD36, adiponectin C/EBPα, and LPL, which serve as significant factors for adipocyte differentiation in C3H10T1/2 cells and primary mesenchymal stem cells, which are pluripotent stem cell lines, and may increase the activity of ALP, osterix, CO1I and RUNX2, which serve as significant factors for osteoblast differentiation. The Eupatorium spp. extract of the present invention exhibits the effects of increasing bone mineral density (BMD) and decreasing adipocytes in bone marrow in an osteoporosis animal model experiment involving an ovariectomy, and therefore may be used as a useful material for preventing and treating osteoporosis.

    摘要翻译： 本发明涉及一种番茄属（Eupatorium spp。） 提取物具有作为脂肪细胞减少和成骨细胞增加的结果的抗肥胖效果，以及通过增加成骨细胞并通过减少脂肪细胞并在间充质干细胞中以相同比例增加成骨细胞来预防骨质疏松症来预防骨质疏松症的效果。 紫杉属的DCM级分层。 每月收集茎提取物和紫茎泽兰属 仅在9月份收集的茎提取物可能抑制PPARγ，AP2，CD36，脂联素C /EBPα和LPL的活性，其作为C3H10T1 / 2细胞和原代间充质干细胞的脂肪细胞分化的重要因子，其为多能干细胞系 ，并且可能增加ALP，osterix，CO1I和RUNX2的活性，其作为成骨细胞分化的重要因素。 紫ium属 本发明的提取物在涉及卵巢切除术的骨质疏松动物模型实验中表现出增加骨矿物质密度（BMD）和减少骨髓中的脂肪细胞的作用，因此可用作预防和治疗骨质疏松症的有用材料。

    Non-volatile memory, method of operating the same, memory system including the same, and method of operating the system
    2.
    发明授权
    Non-volatile memory, method of operating the same, memory system including the same, and method of operating the system 有权
    非易失性存储器，操作方法，包括相同的存储器系统以及操作系统的方法

    公开(公告)号：US08885409B2

    公开(公告)日：2014-11-11

    申请号：US13618604

    申请日：2012-09-14

    申请人： Sang Hoon Lee ,  Hyun Seok Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Jae Yong Jeong

    发明人： Sang Hoon Lee ,  Hyun Seok Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Jae Yong Jeong

    IPC分类号： G11C16/04

    CPC分类号： G11C16/04 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/26 ,  G11C29/00

    摘要： A nonvolatile memory device includes an array of nonvolatile memory cells and a plurality of page buffers configured to receive a plurality of pages of data read from the same page in the array using different read voltage conditions. A control circuit is provided, which is electrically coupled to the plurality of page buffers. The control circuit is configured to perform a test operation by driving the plurality of page buffers with control signals that cause generation within the nonvolatile memory device of a string of XOR data bits, which are derived from a comparison of at least two of the multiple pages of data read from the same page of nonvolatile memory cells using the different read voltage conditions. An input/output device is provided, which is configured to output test data derived from the string of XOR data bits to another device located external to the nonvolatile memory device.

    摘要翻译： 非易失性存储器件包括非易失性存储器单元的阵列和多个页缓冲器，其被配置为使用不同的读取电压条件从阵列中的同一页面接收多页数据。 提供了一种控制电路，其电耦合到多个页面缓冲器。 控制电路被配置为通过用控制信号驱动多个页面缓冲器来执行测试操作，该控制信号导致非易失性存储器件内的异或数据位串的产生，这是从多个页面中的至少两个的比较导出的 使用不同的读取电压条件从同一页的非易失性存储单元读取数据。 提供了一种输入/输出设备，其被配置为将从XOR数据位串导出的测试数据输出到位于非易失性存储器件外部的另一个设备。

    Semiconductor memory apparatus with power-meshed structure
    3.
    发明授权
    Semiconductor memory apparatus with power-meshed structure 失效
    具有电力网格结构的半导体存储器件

    公开(公告)号：US08503212B2

    公开(公告)日：2013-08-06

    申请号：US12843647

    申请日：2010-07-26

    申请人： Boo Ho Jung ,  Jun Ho Lee ,  Hyun Seok Kim ,  Sun Ki Cho ,  Yang Hee Kim ,  Young Won Kim

    发明人： Boo Ho Jung ,  Jun Ho Lee ,  Hyun Seok Kim ,  Sun Ki Cho ,  Yang Hee Kim ,  Young Won Kim

    IPC分类号： G11C5/06 ,  H01L23/52

    CPC分类号： G11C5/063 ,  G11C5/025

    摘要： A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.

    摘要翻译： 一种半导体存储装置，包括：多个存储体，每个存储体具有多个单元格层; 多个电源线，布置在所述多个银行的每一个的预定部分上; 与每个组的至少一个侧面相邻设置的列控制区，其垂直于电力线的延伸方向; 以及设置在所述列控制区域上并电连接到所述多个电力线的导电板。

    METHOD FOR OPERATING MEMORY CONTROLLER, AND MEMORY SYSTEM INCLUDING THE SAME
    5.
    发明申请
    METHOD FOR OPERATING MEMORY CONTROLLER, AND MEMORY SYSTEM INCLUDING THE SAME 有权
    用于操作存储器控制器的方法，以及包括其的存储器系统

    公开(公告)号：US20130036261A1

    公开(公告)日：2013-02-07

    申请号：US13564076

    申请日：2012-08-01

    申请人： Hyun Seok Kim ,  Sung Bin Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Sang Hoon Lee

    发明人： Hyun Seok Kim ,  Sung Bin Kim ,  Sung-Hwan Bae ,  Jong-Nam Baek ,  Sang Hoon Lee

    IPC分类号： G06F12/00

    CPC分类号： G06F13/16 ,  G06F11/00 ,  G06F11/1048 ,  G06F11/1076 ,  G11C16/26 ,  G11C16/349

    摘要： A method for operating a memory controller capable of controlling a maximum count of a read retry operation is disclosed. The method includes programming a first real time clock (RTC) value indicating a time-of-day when a program operation is performed when the program operation for programming a data to a storage region of a non-volatile memory, obtaining information for the storage region by using the first RTC value read from the non-volatile memory and a second RTC value indicating a time-of-day when a read operation is performed, when the read operation for the data programmed to the storage region is performed, and decreasing a maximum count of a read retry operation by using the information, when the read retry operation is performed for the storage region.

    摘要翻译： 公开了一种用于操作能够控制读取重试操作的最大计数的存储器控​​制器的方法。 该方法包括编程第一实时时钟（RTC）值，其指示在将数据编程到非易失性存储器的存储区域的程序操作时执行程序操作的时间，获得用于存储的信息 通过使用从非易失性存储器读取的第一RTC值和表示执行读取操作的时间的第二RTC值，执行对存储区域的编程的数据的读取操作，并且减少 当对存储区域执行读取重试操作时，通过使用该信息的重试操作的最大计数。

    SEMICONDUCTOR MEMORY APPARATUS WITH POWER-MESHED STRUCTURE
    8.
    发明申请
    SEMICONDUCTOR MEMORY APPARATUS WITH POWER-MESHED STRUCTURE 失效
    具有功率结构的半导体存储器件

    公开(公告)号：US20110235385A1

    公开(公告)日：2011-09-29

    申请号：US12843647

    申请日：2010-07-26

    申请人： Boo Ho JUNG ,  Jun Ho Lee ,  Hyun Seok Kim ,  Sun Ki Cho ,  Yang Hee Kim ,  Young Won Kim

    发明人： Boo Ho JUNG ,  Jun Ho Lee ,  Hyun Seok Kim ,  Sun Ki Cho ,  Yang Hee Kim ,  Young Won Kim

    IPC分类号： G11C5/02

    CPC分类号： G11C5/063 ,  G11C5/025

    摘要： A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of banks; a column control region disposed adjacent to at least one of sides of each bank which are perpendicular to an extending direction of the power lines; and a conductive plate disposed over the column control region and electrically connected to the plurality of power lines.

    摘要翻译： 一种半导体存储装置，包括：多个存储体，每个存储体具有多个单元格层; 多个电源线，布置在所述多个银行的每一个的预定部分上; 与每个组的至少一个侧面相邻设置的列控制区，其垂直于电力线的延伸方向; 以及设置在所述列控制区域上并电连接到所述多个电力线的导电板。

    Liquid crystal display device with voltage compensator
    10.
    发明授权
    Liquid crystal display device with voltage compensator 有权
    带电压补偿器的液晶显示装置

    公开(公告)号：US07502020B2

    公开(公告)日：2009-03-10

    申请号：US11022652

    申请日：2004-12-28

    申请人： Seok Su Kim ,  Hyun Seok Kim ,  Sun Young Choi

    发明人： Seok Su Kim ,  Hyun Seok Kim ,  Sun Young Choi

    IPC分类号： G09G5/00 ,  G09G3/36

    CPC分类号： G09G3/3655 ,  G09G2320/0233

    摘要： A liquid crystal display device and a driving method thereof for preventing a brightness difference between horizontal line blocks are disclosed. In the liquid crystal display device, a liquid crystal display panel has a liquid crystal cell matrix. A power supply generates a common voltage. Common lines directly on a substrate of the liquid crystal display panel are connected to a common electrode of the liquid crystal cell. A common voltage compensator compensates for the common voltage into a large resistance value with a resistance value greater than a combination of resistances of the common lines and the large resistance directly between the power supply and the common lines.

    摘要翻译： 公开了一种用于防止水平线块之间的亮度差的液晶显示装置及其驱动方法。 在液晶显示装置中，液晶显示面板具有液晶单元矩阵。 电源产生公共电压。 直接在液晶显示面板的基板上的公用线连接到液晶单元的公共电极。 公共电压补偿器将公共电压补偿为大电阻值，其电阻值大于公共线的电阻和电源和公共线之间的大电阻的组合。