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1.发明申请公开(公告)号：US20200253000A1
公开(公告)日：2020-08-06
申请号：US16857400
申请日：2020-04-24
Applicant: Infineon Technologies AG
Inventor： Thoralf Kautzsch , Heiko Froehlich , Uwe Rudolph , Alessia Scire , Maik Stegemann , Mirko Vogt
Abstract: A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.
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公开(公告)号：US10684306B2
公开(公告)日：2020-06-16
申请号：US15200299
申请日：2016-07-01
Applicant: Infineon Technologies AG
Inventor： Steffen Bieselt , Heiko Froehlich , Thoralf Kautzsch , Andre Roeth , Maik Stegemann , Mirko Vogt , Bernhard Winkler
IPC: G01P15/125 , G01P15/08
Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.
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公开(公告)号：US10084101B2
公开(公告)日：2018-09-25
申请号：US15345015
申请日：2016-11-07
Applicant: Infineon Technologies AG
Inventor： Thoralf Kautzsch , Heiko Froehlich , Maik Stegemann , Mirko Vogt
IPC: H01L31/0232 , H01L31/0203 , H01L31/02
CPC classification number: H01L31/02327 , H01L27/146 , H01L27/14618 , H01L27/14629 , H01L31/02016 , H01L31/0203
Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.
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4.发明申请公开(公告)号：US20170290098A1
公开(公告)日：2017-10-05
申请号：US15461810
申请日：2017-03-17
Applicant: Infineon Technologies AG
Inventor： Thoralf Kautzsch , Heiko Froehlich , Uwe Rudolph , Alessia Scire , Maik Stegemann , Mirko Vogt
CPC classification number: H05B3/0014 , G01F1/68 , G01N29/02 , G01N29/2418 , G01N2291/021 , G01N2291/02809 , H01L33/44 , H01L33/52 , H01L33/60 , H01L33/642 , H05B2203/017
Abstract: A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.
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公开(公告)号：US09107335B2
公开(公告)日：2015-08-11
申请号：US13769886
申请日：2013-02-19
Applicant: Infineon Technologies AG
Inventor： Marko Lemke , Mirko Vogt , Stefan Tegen
IPC: H05K1/16 , H05K1/18 , H01M4/82 , H05K13/00 , H05K1/02 , H01G9/15 , H01L23/58 , H01L27/01 , H01G11/84
CPC classification number: H05K13/00 , H01G9/15 , H01G11/84 , H01L23/58 , H01L27/016 , H01L2924/0002 , H05K1/0296 , H05K1/16 , H05K2201/10037 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , H01L2924/00
Abstract: A method for manufacturing an integrated circuit may include forming an electronic circuit in or above a carrier; forming at least one metallization layer structure configured to electrically connect the electronic circuit; and forming a solid state electrolyte battery at least partially in the at least one metallization layer structure, wherein the solid state electrolyte battery is electrically connected to the electronic circuit.
Abstract translation: 集成电路的制造方法可以包括在载体中或上方形成电子电路; 形成构造成电连接所述电子电路的至少一个金属化层结构; 以及至少部分地在所述至少一个金属化层结构中形成固态电解质电池，其中所述固态电解质电池电连接到所述电子电路。
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Patent Agency Ranking
6.发明申请METHOD FOR PROCESSING A LAYER AND A METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE 审中-公开一种处理层的方法和一种制造电子设备的方法公开(公告)号：US20150235864A1
公开(公告)日：2015-08-20
申请号：US14181751
申请日：2014-02-17
Applicant: Infineon Technologies AG
Inventor： Mirko Vogt , Felix Braun , Jens Schneider , Bee Kim Hong , Matthias Schmeide
IPC: H01L21/311 , H01L21/266 , H01L21/3213
CPC classification number: H01L21/31144 , H01L21/266 , H01L21/31155 , H01L21/32139
Abstract: A method for processing a layer may include: providing a patterned carbon layer over a layer or over a carrier; and carrying out an ion implantation through the patterned carbon layer into the layer or into the carrier.
Abstract translation: 用于处理层的方法可以包括：在层上或载体上提供图案化碳层; 并且通过图案化的碳层进行离子注入到该层或载体中。
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7.发明申请公开(公告)号：US20140233200A1
公开(公告)日：2014-08-21
申请号：US13769886
申请日：2013-02-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Marko Lemke , Mirko Vogt , Stefan Tegen
CPC classification number: H05K13/00 , H01G9/15 , H01G11/84 , H01L23/58 , H01L27/016 , H01L2924/0002 , H05K1/0296 , H05K1/16 , H05K2201/10037 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , H01L2924/00
Abstract: A method for manufacturing an integrated circuit may include forming an electronic circuit in or above a carrier; forming at least one metallization layer structure configured to electrically connect the electronic circuit; and forming a solid state electrolyte battery at least partially in the at least one metallization layer structure, wherein the solid state electrolyte battery is electrically connected to the electronic circuit.
Abstract translation: 集成电路的制造方法可以包括在载体中或上方形成电子电路; 形成构造成电连接所述电子电路的至少一个金属化层结构; 以及至少部分地在所述至少一个金属化层结构中形成固态电解质电池，其中所述固态电解质电池电连接到所述电子电路。
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公开(公告)号：US12137500B2
公开(公告)日：2024-11-05
申请号：US16857400
申请日：2020-04-24
Applicant: Infineon Technologies AG
Inventor： Thoralf Kautzsch , Heiko Froehlich , Uwe Rudolph , Alessia Scire , Maik Stegemann , Mirko Vogt
Abstract: A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.
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公开(公告)号：US11422151B2
公开(公告)日：2022-08-23
申请号：US16860528
申请日：2020-04-28
Applicant: Infineon Technologies AG
Inventor： Thoralf Kautzsch , Steffen Bieselt , Heiko Froehlich , Andre Roeth , Maik Stegemann , Mirko Vogt , Bernhard Winkler
IPC: G01P15/125 , B81C1/00 , G01P15/08 , H01L21/02 , H01L21/768
Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.
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10.发明申请公开(公告)号：US20220069156A1
公开(公告)日：2022-03-03
申请号：US17461159
申请日：2021-08-30
Applicant: Infineon Technologies AG
Inventor： Andre Roeth , Henning Feick , Heiko Froehlich , Thoralf Kautzsch , Olga Khvostikova , Stefano Parascandola , Thomas Popp , Maik Stegemann , Mirko Vogt
IPC: H01L31/18 , H01L31/105 , H01L31/028 , H01L21/02
Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.
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