公开(公告)号：US20160304815A1

公开(公告)日：2016-10-20

申请号：US15132480

申请日：2016-04-19

Applicant: Intermolecular, Inc. ,  Samsung Electronics Co., Ltd.

Inventor： Jeffrey Lowe ,  Kim Van Berkel ,  Jae-Hyuck Choi

IPC: C11D3/30 ,  B08B3/10 ,  C11D3/28 ,  B08B3/08 ,  G03F1/82 ,  G03F1/22

CPC classification number: C11D3/30 ,  C11D3/28 ,  C11D3/32 ,  G03F1/82 ,  G03F7/425

Abstract: Embodiments provided herein describe methods and chemical solutions for cleaning photomasks. A photomask is provided. The photomask is exposed to a chemical solution. The chemical solution includes a quaternary ammonium hydroxide.The quaternary ammonium hydroxide may include at least one of tetraethyl ammonium hydroxide (TEAH), tetrapropyl ammonium hydroxide (TPAH), or a combination thereof. The photomask may be an extreme ultraviolet (EUV) lithography photomask.

Abstract translation: 季铵氢氧化物可以包括四乙基氢氧化铵（TEAH），四丙基氢氧化铵（TPAH）或其组合中的至少一种。 光掩模可以是极紫外（EUV）光刻光掩模。

公开(公告)号：US20140273497A1

公开(公告)日：2014-09-18

申请号：US14108494

申请日：2013-12-17

Applicant: Intermolecular Inc.

Inventor： Makonnen Payne ,  Kim Van Berkel

IPC: H01L21/67 ,  H01L21/30 ,  H01L21/306

CPC classification number: H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

Abstract: Embodiments provided herein describe systems and methods for processing substrates. A substrate having a plurality of site-isolated regions defined thereon is provided. A plurality of wet processes is simultaneously performed. Each of the plurality of wet processes is performed on one of the plurality of site-isolated regions defined on the substrate. The simultaneously performing includes exposing each of the plurality of site-isolated regions to one of a plurality of wet processing formulations. Each of the plurality of wet processing formulations includes a component. The respective component is added to at least some of the plurality of wet processing formulations during the exposing. A processing condition is varied between at least two of the plurality of wet processes in a combinatorial manner.

Abstract translation: 本文提供的实施例描述了用于处理衬底的系统和方法。 提供了具有限定在其上的多个位置隔离区域的基板。 同时执行多个湿法。 多个湿法中的每一个在限定在基板上的多个位置隔离区域之一上进行。 同时执行的包括将多个位置隔离区域中的每一个暴露于多个湿处理制剂中的一个。 多种湿处理制剂中的每一种都包括一种组分。 在曝光期间将相应的组分添加到至少一些湿处理制剂中。 处理条件以组合的方式在多个湿法工艺中的至少两个之间变化。

公开(公告)号：US08575016B1

公开(公告)日：2013-11-05

申请号：US13656220

申请日：2012-10-19

Applicant: Intermolecular Inc.

Inventor： John Foster ,  Kim Van Berkel

IPC: H01L21/3205

CPC classification number: H01L29/78 ,  H01L21/28114 ,  H01L21/31111 ,  H01L21/32134 ,  H01L29/42376 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66477

Abstract: A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.

Abstract translation: 提供了蚀刻金属栅极叠层的方法。 该方法包括在衬底上形成栅极堆叠，其中栅极堆叠包括金属栅极。 在栅极堆叠上执行湿蚀刻工艺。 湿蚀刻工艺包括将具有栅极堆叠的衬底浸入由湿蚀刻剂和氧化剂组成的水溶液中，从溶液中除去衬底并从蚀刻的栅极堆叠中冲洗溶液。

公开(公告)号：US20140179082A1

公开(公告)日：2014-06-26

申请号：US13725358

申请日：2012-12-21

Applicant: INTERMOLECULAR INC.

Inventor： John Foster ,  Kim Van Berkel

IPC: H01L21/306 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/31111 ,  H01L21/67086 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659

Abstract: Provided are methods for processing semiconductor substrates having hafnium oxide structures as well as one or more of silicon nitride, silicon oxide, polysilicon, and titanium nitride structures. Selected etching solution compositions and processing conditions provide high etching selectivity of hafnium oxide relative to these other materials. As such, hafnium oxide structures may be partially or completely removed without significant damage to other exposed structures made from these other materials. In some embodiments, the etching rate hafnium oxide is two or more times greater than the etching rate of silicon oxide and/or twenty or more times greater that the etching rate of polysilicon. The etching rate of hafnium oxide may be one and half times greater than the etching rate of silicon nitride and/or five or more times greater than the etching rate of titanium nitride.

Abstract translation: 提供了用于处理具有氧化铪结构的半导体衬底以及氮化硅，氧化硅，多晶硅和氮化钛结构中的一种或多种的方法。 所选择的蚀刻溶液组合物和加工条件相对于这些其它材料提供氧化铪的高蚀刻选择性。 因此，氧化铪结构可以部分或完全去除，而不会对由这些其它材料制成的其它暴露结构造成显着的损害。 在一些实施例中，蚀刻速率铪氧化物比氧化硅的蚀刻速率大两倍或更多倍，和/或多晶硅的蚀刻速率的二十或更多倍。 氧化铪的蚀刻速率可以比氮化硅的蚀刻速度大一倍以上，或比氮化钛的蚀刻速度大五倍以上。

公开(公告)号：US20130285159A1

公开(公告)日：2013-10-31

申请号：US13656220

申请日：2012-10-19

Applicant: Intermolecular Inc.

Inventor： John Foster ,  Kim Van Berkel

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L21/28114 ,  H01L21/31111 ,  H01L21/32134 ,  H01L29/42376 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66477

Abstract: A method for etching a metal gate stack is provided. The method includes forming a gate stack on a substrate, where the gate stack includes a metal gate. A wet etch process is performed on the gate stack. The wet etch process includes submersing the substrate with the gate stack in an aqueous solution composed of a wet etchant and an oxidizer, removing the substrate from the solution and rinsing the solution from the etched gate stack.

Abstract translation: 提供了蚀刻金属栅极叠层的方法。 该方法包括在衬底上形成栅极堆叠，其中栅极堆叠包括金属栅极。 在栅极堆叠上执行湿蚀刻工艺。 湿蚀刻工艺包括将具有栅极堆叠的衬底浸入由湿蚀刻剂和氧化剂组成的水溶液中，从溶液中除去衬底并从蚀刻的栅极堆叠中冲洗溶液。

公开(公告)号：US09174323B2

公开(公告)日：2015-11-03

申请号：US13671478

申请日：2012-11-07

Applicant: Intermolecular, Inc.

Inventor： Kim Van Berkel ,  Aaron T. Francis ,  Frank C. Ma ,  George Mirth

IPC: B24B37/26 ,  B24B37/10

CPC classification number: B24B37/26 ,  B24B37/10

Abstract: Polishing and cleaning techniques are combinatorially processed and evaluated. A polishing system can include a reactor assembly having multiple reaction chambers, with at least a reaction chamber including a rotatable polishing head, slurry and chemical distribution, chemical and water rinse, and slurry and fluid removal. Different downward forces can be applied to the polishing heads for evaluating optimum process conditions. Channels in the polishing pads can redistribute slurry and chemical to the polishing area.

Abstract translation: 抛光和清洁技术被组合处理和评估。 抛光系统可以包括具有多个反应室的反应器组件，其中至少一个反应室包括可旋转的抛光头，浆料和化学分布，化学和水冲洗以及淤浆和流体的去除。 可以向抛光头施加不同的向下的力以评估最佳工艺条件。 抛光垫中的通道可以将浆料和化学品重新分配到抛光区域。

公开(公告)号：US20140127974A1

公开(公告)日：2014-05-08

申请号：US13671478

申请日：2012-11-07

Applicant: INTERMOLECULAR, INC.

Inventor： Kim Van Berkel ,  Aaron T. Francis ,  Frank C. Ma ,  George Mirth

IPC: B24B37/00 ,  B24B37/10 ,  B24B37/26

CPC classification number: B24B37/26 ,  B24B37/10

Abstract: Polishing and cleaning techniques are combinatorially processed and evaluated. A polishing system can include a reactor assembly having multiple reaction chambers, with at least a reaction chamber including a rotatable polishing head, slurry and chemical distribution, chemical and water rinse, and slurry and fluid removal. Different downward forces can be applied to the polishing heads for evaluating optimum process conditions. Channels in the polishing pads can redistribute slurry and chemical to the polishing area.

Abstract translation: 抛光和清洁技术被组合处理和评估。 抛光系统可以包括具有多个反应室的反应器组件，其中至少一个反应室包括可旋转的抛光头，浆料和化学分布，化学和水冲洗以及淤浆和流体的去除。 可以向抛光头施加不同的向下的力以评估最佳工艺条件。 抛光垫中的通道可以将浆料和化学品重新分配到抛光区域。