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    SEMICONDUCTOR DEVICES WITH ASYMMETRIC HALO IMPLANTATION AND METHOD OF MANUFACTURE
    2.
    发明申请
    SEMICONDUCTOR DEVICES WITH ASYMMETRIC HALO IMPLANTATION AND METHOD OF MANUFACTURE 有权
    具有不对称HALO植入的半导体器件及其制造方法

    公开(公告)号：US20150054094A1

    公开(公告)日：2015-02-26

    申请号：US14505536

    申请日：2014-10-03

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： Darshana N. BHAGAT ,  Thomas J. DUNBAR ,  Yen L. LIM ,  Jed H. RANKIN ,  Eva S. HOLMES

    IPC: H01L29/78 ,  H01L21/266 ,  H01L21/265

    CPC classification number: H01L29/7835 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L21/823807 ,  H01L29/7833

    Abstract: A method includes forming a hardmask over one or more gate structures. The method further includes forming a photoresist over the hardmask. The method further includes forming an opening in the photoresist over at least one of the gate structures. The method further includes stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further includes removing the photoresist. The method further includes providing a halo implant on a side of the least one of the at least one of the gate structures.

    Abstract translation: 一种方法包括在一个或多个栅极结构上形成硬掩模。 该方法还包括在硬掩模上形成光致抗蚀剂。 该方法还包括在至少一个栅极结构上的光致抗蚀剂中形成开口。 该方法还包括剥离暴露在开口中且位于至少一个栅极结构之上的硬掩模。 该方法还包括去除光致抗蚀剂。 该方法还包括在所述至少一个栅极结构中的至少一个栅极结构的一侧提供晕轮植入物。

    TUNABLE FILTER STRUCTURES AND DESIGN STRUCTURES
    3.
    发明申请
    TUNABLE FILTER STRUCTURES AND DESIGN STRUCTURES 有权
    TUNABLE过滤器结构和设计结构

    公开(公告)号：US20150244345A1

    公开(公告)日：2015-08-27

    申请号：US14700744

    申请日：2015-04-30

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Robert K. LEIDY ,  Anthony K. STAMPER

    IPC: H03H9/54 ,  H03H9/17

    CPC classification number: H03H9/545 ,  H03H9/0547 ,  H03H9/171 ,  H03H9/173 ,  H03H9/56 ,  H03H2009/02204 ,  Y10T29/42

    Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.

    Abstract translation: 公开了可调谐滤波器结构，制造方法和设计结构。 形成滤波器结构的方法包括在空腔结构上形成压电谐振滤波器。 压电谐振滤波器的形成包括：在压电材料的一侧上形成上电极; 以及在所述压电材料的相对侧上形成下电极。 该方法还包括在致动时与压电谐振滤波器接触的位置处形成微机电结构（MEMS）悬臂梁。

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