利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

155 条记录 (耗时 0.037 秒)

    EUV collector debris management
    2.
    发明授权
    EUV collector debris management 失效
    EUV收集器碎片管理

    公开(公告)号：US08075732B2

    公开(公告)日：2011-12-13

    申请号：US10979945

    申请日：2004-11-01

    申请人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    发明人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    IPC分类号： C23F1/00

    CPC分类号： B08B7/00

    摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

    摘要翻译： 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

    Laser produced plasma EUV light source
    3.
    发明授权
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号：US08035092B2

    公开(公告)日：2011-10-11

    申请号：US12655987

    申请日：2010-01-11

    申请人： Alexander N. Bykanov ,  Norbert Bowering ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  Oleh Khodykin

    发明人： Alexander N. Bykanov ,  Norbert Bowering ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  Oleh Khodykin

    IPC分类号： H04H1/04

    CPC分类号： G03F7/70916 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70908 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/008

    摘要： A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

    摘要翻译： 公开了一种可以包括在等离子体位置处产生等离子体的系统，等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件，例如多个远离现场的多层反射镜，以及设置在等离子体和光学元件之间的流动气体，该气体建立足以在该距离上操作的气体压力， d，在离子到达光学器件之前，将离子能量降低到预先选定的值以下。 在一个实施方案中，气体可以包含氢气，并且在一个具体实施方案中，气体可以包含大于50体积％的氢气。

    Laser system
    6.
    发明授权
    Laser system 有权
    激光系统

    公开(公告)号：US07746913B2

    公开(公告)日：2010-06-29

    申请号：US11981449

    申请日：2007-10-30

    申请人： Alexander I. Ershov ,  William N. Partlo ,  Daniel J. W. Brown ,  Igor V. Fomenkov ,  Robert A. Bergstedt

    发明人： Alexander I. Ershov ,  William N. Partlo ,  Daniel J. W. Brown ,  Igor V. Fomenkov ,  Robert A. Bergstedt

    IPC分类号： H01S3/22

    CPC分类号： H01S3/2333 ,  G03F7/70025 ,  G03F7/70041 ,  G03F7/70558 ,  G03F7/70583 ,  H01S3/005 ,  H01S3/08 ,  H01S3/08059 ,  H01S3/105 ,  H01S3/2251 ,  H01S3/235 ,  H01S3/2366

    摘要： An apparatus/method which may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a seed laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser system output light beam of pulses, which may comprise a ring power amplification stage; a seed injection mechanism.

    摘要翻译： 可以包括线变窄的脉冲准分子或分子氟气体放电激光系统的装置/方法，其可以包括种子激光振荡器，其产生包括种子激光输出的脉冲光束的输出，所述种子激光输出光束可以包括第一气体放电准分子或分子氟激光 房间 第一振荡器腔内的线窄模块; 在第二气体放电准分子或分子氟激光室中包含放大增益介质的激光放大级，其接收种子激光振荡器的输出并放大种子激光振荡器的输出，以形成激光系统输出，该激光系统输出包括激光系统输出光束 的脉冲，其可以包括环形功率放大级; 种子注射机制。

    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
    7.
    发明授权
    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权
    用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法

    公开(公告)号：US07732793B2

    公开(公告)日：2010-06-08

    申请号：US11705954

    申请日：2007-02-13

    申请人： Alexander I. Ershov ,  William F. Marx ,  Norbert Bowering ,  Bjorn A. M. Hansson ,  Oleh Khodykin ,  Igor V. Fomenkov

    发明人： Alexander I. Ershov ,  William F. Marx ,  Norbert Bowering ,  Bjorn A. M. Hansson ,  Oleh Khodykin ,  Igor V. Fomenkov

    IPC分类号： C25F1/00

    CPC分类号： B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/7085 ,  G03F7/70916 ,  G21K1/06 ,  G21K2201/06 ,  H05G2/001

    摘要： Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

    摘要翻译： 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面，提供了一种EUV计量监测器，其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面，公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面，EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面，公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

    Laser system
    9.
    发明授权
    Laser system 有权
    激光系统

    公开(公告)号：US07630424B2

    公开(公告)日：2009-12-08

    申请号：US11981195

    申请日：2007-10-30

    申请人： Alexander I. Ershov ,  William N. Partlo ,  Daniel J. W. Brown ,  Igor V. Fomenkov

    发明人： Alexander I. Ershov ,  William N. Partlo ,  Daniel J. W. Brown ,  Igor V. Fomenkov

    IPC分类号： H01S3/22

    CPC分类号： H01S3/2333 ,  G03F7/70025 ,  G03F7/70041 ,  G03F7/70583 ,  H01S3/005 ,  H01S3/08036 ,  H01S3/08059 ,  H01S3/10092 ,  H01S3/225 ,  H01S3/2251 ,  H01S3/235 ,  H01S2301/02

    摘要： A method/apparatus may comprise operating a line narrowed pulsed excimer or molecular fluorine gas discharge laser system by using a seed laser oscillator to produce an output which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module; a laser amplification stage which may comprise a ring power amplification stage; the method of operation may the steps of: selecting a differential timing between an electrical discharge between a pair of electrodes in the first laser chamber and in the second laser chamber which at the same time keeps ASE below a selected limit and the pulse energy of the laser system output light beam of pulses essentially constant.

    摘要翻译： 方法/装置可以包括通过使用种子激光振荡器来操作线窄的脉冲准分子或分子氟气体放电激光系统以产生可包括第一气体放电准分子或分子氟激光室的输出; 线缩小模块; 可以包括环功率放大级的激光放大级; 操作方法可以是：选择第一激光室中的一对电极与第二激光室中的一对电极之间的放电之间的差分定时，同时使ASE保持在选定的极限以下，并且脉冲能量 激光系统输出光束的脉冲基本恒定。

    Drive laser delivery systems for euv light source
    10.
    发明申请
    Drive laser delivery systems for euv light source 有权
    驱动用于euv光源的激光输送系统

    公开(公告)号：US20090267005A1

    公开(公告)日：2009-10-29

    申请号：US12322669

    申请日：2009-02-04

    申请人： Alexander N. Bykanov ,  Igor V. Fomenkov ,  Oleh Khodykin ,  Alexander I. Ershov

    发明人： Alexander N. Bykanov ,  Igor V. Fomenkov ,  Oleh Khodykin ,  Alexander I. Ershov

    IPC分类号： G01J3/10

    CPC分类号： H05G2/003 ,  G03F7/70033 ,  H01S3/0064 ,  H01S3/073 ,  H01S3/0805 ,  H01S3/08054 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/10092 ,  H01S3/105 ,  H01S3/1066 ,  H01S3/115 ,  H01S3/121 ,  H01S3/127 ,  H01S3/2232 ,  H01S3/2316 ,  H01S3/2325 ,  H01S3/2383 ,  H05G2/008

    摘要： An LPP EUV light source is disclosed having an optic positioned in the plasma chamber for reflecting EUV light generated therein and a laser input window. For this aspect, the EUV light source may be configured to expose the optic to a gaseous etchant pressure for optic cleaning while the window is exposed to a lower gaseous etchant pressure to avoid window coating deterioration. In another aspect, an EUV light source may comprise a target material positionable along a beam path to participate in a first interaction with light on the beam path; an optical amplifier; and at least one optic directing photons scattered from the first interaction into the optical amplifier to produce a laser beam on the beam path for a subsequent interaction with the target material to produce an EUV light emitting plasma.

    摘要翻译： 公开了一种LPP EUV光源，其具有位于等离子体室中的光学器件，用于反射在其中产生的EUV光和激光输入窗口。 对于该方面，EUV光源可以被配置为将窗口暴露于更低的气体蚀刻剂压力以将窗口暴露于气体蚀刻剂压力以进行光学清洁，以避免窗口涂层变质。 在另一方面，EUV光源可以包括沿着光束路径定位以参与与光束路径上的光的第一相互作用的目标材料; 光放大器; 以及至少一个光导向光子从第一相互作用散射到光放大器中以在光束路径上产生激光束，用于随后与目标材料的相互作用以产生EUV发光等离子体。