公开(公告)号：US20150257280A1

公开(公告)日：2015-09-10

申请号：US14639635

申请日：2015-03-05

Applicant: Infineon Technologies AG

Inventor： Alexander Ciliox ,  Nicolas Heuck ,  Christian Stahlhut

IPC: H05K3/34 ,  B23K35/02 ,  B23K1/00 ,  B23K31/02 ,  B05D3/02 ,  B05D5/00

CPC classification number: H05K3/3484 ,  B05D3/0254 ,  B05D5/00 ,  B23K1/0016 ,  B23K1/005 ,  B23K1/008 ,  B23K1/20 ,  B23K31/02 ,  B23K35/02 ,  B23K35/0238 ,  B23K35/025 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K2101/42 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75501 ,  H01L2224/83101 ,  H01L2224/8384 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K1/0306 ,  H05K3/1283 ,  H05K3/341 ,  H05K3/3494 ,  H05K2203/04 ,  H05K2203/111 ,  H05K2203/1545 ,  H01L2924/00

Abstract: One aspect of the invention relates to producing a dried paste layer on a joining partner. For this purpose, a joining partner having a contact surface is provided, to which contact surface a paste is applied. Furthermore, a heating device is provided, which is preheated to a preheating temperature. The paste applied to the contact surface is then dried during a drying phase, such that a dried paste layer arises from the paste. In the drying phase, the joining partner and the preheated heating device are at a distance of at most 5 mm.

Abstract translation: 本发明的一个方面涉及在接合配偶体上制备干糊层。 为此，提供具有接触表面的接合对象，其上施加有粘合剂的接触表面。 此外，提供加热装置，其被预热到预热温度。 然后将施加到接触表面的糊剂在干燥阶段中干燥，从而使糊状物从糊状物产生。 在干燥阶段，接合对象和预热加热装置的距离最大为5mm。

公开(公告)号：US09659793B2

公开(公告)日：2017-05-23

申请号：US14943511

申请日：2015-11-17

Applicant: Infineon Technologies AG

Inventor： Nicolas Heuck ,  Frederik Otto ,  Christian Steininger

IPC: H01L21/00 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L21/4825 ,  H01L21/4842 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/27003 ,  H01L2224/27005 ,  H01L2224/2732 ,  H01L2224/2744 ,  H01L2224/27442 ,  H01L2224/27848 ,  H01L2224/29294 ,  H01L2224/29295 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29373 ,  H01L2224/2939 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/75252 ,  H01L2224/75315 ,  H01L2224/75343 ,  H01L2224/75745 ,  H01L2224/83048 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/832 ,  H01L2224/83203 ,  H01L2224/83207 ,  H01L2224/83208 ,  H01L2224/8322 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/83986 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.

公开(公告)号：US20160148819A1

公开(公告)日：2016-05-26

申请号：US14943511

申请日：2015-11-17

Applicant: Infineon Technologies AG

Inventor： Nicolas Heuck ,  Frederik Otto ,  Christian Steininger

IPC: H01L21/48

CPC classification number: H01L21/4825 ,  H01L21/4842 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/27003 ,  H01L2224/27005 ,  H01L2224/2732 ,  H01L2224/2744 ,  H01L2224/27442 ,  H01L2224/27848 ,  H01L2224/29294 ,  H01L2224/29295 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29373 ,  H01L2224/2939 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/75252 ,  H01L2224/75315 ,  H01L2224/75343 ,  H01L2224/75745 ,  H01L2224/83048 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/832 ,  H01L2224/83203 ,  H01L2224/83207 ,  H01L2224/83208 ,  H01L2224/8322 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/83986 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.

Abstract translation: 公开了一种用于在半导体芯片和金属层之间制造材料接合连接的方法。 为此，提供了具有芯片安装部分的半导体芯片，金属层以及含有金属粉末的接合介质。 金属粉末在烧结过程中烧结。 在这种情况下，在规定的烧结时间内，满足规定的要求，接合介质配置在半导体芯片和金属层之间，从半导体芯片向右延伸到金属层，半导体芯片和金属 层压在超过最小压制压力的压制压力范围内，使粘合介质保持在高于最低温度的温度范围内并且声音信号被引入粘合介质中。

公开(公告)号：US11081464B2

公开(公告)日：2021-08-03

申请号：US15166855

申请日：2016-05-27

Applicant: Infineon Technologies AG

Inventor： Nicolas Heuck ,  Marco Marchitto ,  Roland Speckels

IPC: H01L23/00 ,  B32B5/16 ,  B32B15/04 ,  B32B15/20 ,  B22F7/06

Abstract: A powder carrier, to which a powder layer containing a metal powder is applied, is provided by an automatic powder carrier feed. A first joining partner is pressed onto the powder layer located on the powder carrier so as to bond a powder layer portion to the first joining partner. The first joining partner is raised from the powder carrier together with the powder layer portion bonded to the first joining partner, and the powder layer portion bonded to the first joining partner is arranged between the first and second joining partners. A sintered join is produced between the first and second joining partners by pressing the first and second joining partners against one another such that the powder layer portion makes contact with both the first and second joining partners. The powder layer portion is sintered as the joining partners are being pressed against one another.

公开(公告)号：US20160225735A1

公开(公告)日：2016-08-04

申请号：US15010727

申请日：2016-01-29

Applicant: Infineon Technologies AG

Inventor： Nicolas Heuck ,  Marco Marchitto ,  Roland Speckels

IPC: H01L23/00 ,  B23K35/30 ,  B23K35/02 ,  B23K1/00 ,  B23K1/018

CPC classification number: H01L24/27 ,  B23K1/0016 ,  B23K1/018 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/3006 ,  H01L23/3735 ,  H01L24/29 ,  H01L24/743 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/27332 ,  H01L2224/27442 ,  H01L2224/27831 ,  H01L2224/27848 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29373 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/743 ,  H01L2224/75252 ,  H01L2224/75315 ,  H01L2224/75343 ,  H01L2224/75745 ,  H01L2224/83191 ,  H01L2224/83207 ,  H01L2224/8384 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method for producing a layer including a connecting medium on an assembly partner is provided. The method incudes providing a carrier on which the connecting medium is applied. The connecting medium contains a metal in the form of a multiplicity of metal particles. The assembly partner is placed on the connecting medium located on the carrier and pressed onto the connecting medium located on the carrier, so that a layer of the connecting medium adheres to the assembly partner. The assembly partner together with the layer adhering thereto is removed from the carrier. By means of a gas flow, edges of the layer, at which the latter extends laterally beyond the assembly partner, are removed so that a layer residue of the layer remains adhering to the assembly partner.

Abstract translation: 提供了一种在组装伙伴上制造包括连接介质的层的方法。 该方法包括提供其上施加有连接介质的载体。 连接介质包含多种金属颗粒形式的金属。 组装伙伴放置在位于载体上的连接介质上，并被压在位于载体上的连接介质上，使得连接介质层粘附到组装伙伴上。 组装伙伴与粘附在其上的层一起从载体上去除。 通过气流，去除了侧壁延伸超过组件配合体的层的边缘，使得该层的层残余物保持粘附到组件配合体上。

公开(公告)号：US20160351533A1

公开(公告)日：2016-12-01

申请号：US15166855

申请日：2016-05-27

Applicant: Infineon Technologies AG

Inventor： Nicolas Heuck ,  Marco Marchitto ,  Roland Speckels

IPC: H01L23/00 ,  B32B15/20 ,  B32B37/06 ,  B32B37/24 ,  B32B5/16 ,  B32B15/04

Abstract: A powder carrier, to which a powder layer containing a metal powder is applied, is provided by an automatic powder carrier feed. A first joining partner is pressed onto the powder layer located on the powder carrier so as to bond a powder layer portion to the first joining partner. The first joining partner is raised from the powder carrier together with the powder layer portion bonded to the first joining partner, and the powder layer portion bonded to the first joining partner is arranged between the first and second joining partners. A sintered join is produced between the first and second joining partners by pressing the first and second joining partners against one another such that the powder layer portion makes contact with both the first and second joining partners. The powder layer portion is sintered as the joining partners are being pressed against one another.

Abstract translation: 通过自动粉末载体进料提供施加含有金属粉末的粉末层的粉末载体。 将第一接合对象压在位于粉末载体上的粉末层上，以将粉末层部分粘合到第一接合配对体。 第一接合对象与粉末载体一起与粘合到第一接合配对体的粉末层部分一起升高，并且粘合到第一接合配对体的粉末层部分布置在第一和第二接合配合体之间。 通过将第一和第二接合构件相互压靠在第一和第二接合构件之间来制造烧结接头，使得粉末层部分与第一和第二接合构件接触。 当接合体彼此压紧时，粉末层部分被烧结。