公开(公告)号：US20240222136A1

公开(公告)日：2024-07-04

申请号：US18091188

申请日：2022-12-29

申请人： Intel Corporation

发明人： Bohan Shan ,  Haobo Chen ,  Srinivas Venkata Ramanuja Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Ashay A. Dani ,  Yiqun Bai ,  Dingying Xu ,  Bai Nie ,  Kyle Jordan Arrington ,  Wei Wei ,  Ziyin Lin

IPC分类号： H01L21/321 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/3212 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/7684

摘要： Mechanical or chemical processes can form roughened surfaces which can be used for coupling layers of electrical systems such as when forming dies, substrates, computer chips or the like that, when subjected to high stress, are robust enough to remain coupled together.

公开(公告)号：US20240203853A1

公开(公告)日：2024-06-20

申请号：US18085281

申请日：2022-12-20

申请人： Intel Corporation

发明人： Bohan Shan ,  Haobo Chen ,  Hongxia Feng ,  Julianne Troiano ,  Dingying Xu ,  Matthew Tingey ,  Xiaoying Guo ,  Srinivas Venkata Ramanuja Pietambaram ,  Bai Nie ,  Gang Duan ,  Bin Mu ,  Kyle Mcelhinny ,  Ashay A. Dani ,  Leonel R. Arana

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/538

CPC分类号： H01L23/49827 ,  H01L21/4846 ,  H01L23/5384

摘要： An electronic device and associated methods are disclosed. In one example, the electronic device can include a substrate, a via, a build-up layer, a top layer, and one or more dies. The substrate can include a conductor coating. The via can be connected to the conductor coating. The build-up layer can be on the substrate. The build-up layer can define a channel that the via is formed within and insulate the via during operation of the electronic device. The top layer can be interproximal to the substrate and the via. The one or more dies can be connected to the via.

公开(公告)号：US20170207152A1

公开(公告)日：2017-07-20

申请号：US15478064

申请日：2017-04-03

申请人： Intel Corporation

发明人： Thomas J. De Bonis ,  Lilia May ,  Rajen S. Sidhu ,  Mukul P. Renavikar ,  Ashay A. Dani ,  Edward R. Prack ,  Carl L. Deppisch ,  Anna M. Prakash ,  James C. Matayabas ,  Jason Jieping Zhang ,  Srinivasa R. Aravamudhan ,  Chang Lin

IPC分类号： H01L23/498 ,  H01L23/31 ,  H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L23/49816 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/76802 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13023 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/37001 ,  H01L2924/00

摘要： An apparatus is described that includes a substrate and a mold compound disposed on the substrate. The semiconductor die is embedded within the mold compound and is electrically coupled to lands on the substrate. Solder balls are disposed around the semiconductor die on the substrate. Each of the solder balls have a solid coating thereon. The solid coating contains a cleaning agent to promote its solder ball's coalescence with another solder ball. Respective vias are formed in the mold compound that expose the solder balls and their respective solid coatings. In combined or alternate embodiments outer edges of the mold compound have smaller thickness than regions of the mold compound between the vias and the semiconductor die. In combined or alternate embodiments micro-channels exist between the solder balls and the mold compound.

公开(公告)号：US10049971B2

公开(公告)日：2018-08-14

申请号：US15478064

申请日：2017-04-03

申请人： Intel Corporation

发明人： Thomas J. De Bonis ,  Lilia May ,  Rajen S. Sidhu ,  Mukul P. Renavikar ,  Ashay A. Dani ,  Edward R. Prack ,  Carl L. Deppisch ,  Anna M. Prakash ,  James C. Matayabas ,  Jason Jieping Zhang ,  Srinivasa R. Aravamudhan ,  Chang Lin

IPC分类号： H01L21/00 ,  H01L23/498 ,  H01L25/065 ,  H01L23/31 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L21/768 ,  H01L25/00 ,  H01L23/00

摘要： An apparatus is described that includes a substrate and a mold compound disposed on the substrate. The semiconductor die is embedded within the mold compound and is electrically coupled to lands on the substrate. Solder balls are disposed around the semiconductor die on the substrate. Each of the solder balls have a solid coating thereon. The solid coating contains a cleaning agent to promote its solder ball's coalescence with another solder ball. Respective vias are formed in the mold compound that expose the solder balls and their respective solid coatings. In combined or alternate embodiments outer edges of the mold compound have smaller thickness than regions of the mold compound between the vias and the semiconductor die. In combined or alternate embodiments micro-channels exist between the solder balls and the mold compound.

公开(公告)号：US20210098326A1

公开(公告)日：2021-04-01

申请号：US16498775

申请日：2017-04-28

申请人： Intel Corporation

发明人： Malavarayan Sankarasubramanian ,  Yongki Min ,  Ashay A. Dani ,  Kaladhar Radhakrishnan

IPC分类号： H01L23/31 ,  H01L23/498 ,  H01L23/522

摘要： A semiconductor package may include a composite magnetic inductor that is formed integral with the semiconductor substrate. The composite magnetic inductor may include a composite magnetic resin layer and a plurality of conductive layers arranged such that the composite magnetic resin layer is interleaved between successive conductive layers. The resultant composite magnetic inductor may be disposed between dielectric layers. A core layer may be disposed proximate the composite magnetic inductor. A build-up layer may be disposed proximate the core layer or proximate the composite magnetic inductor in a coreless semiconductor substrate. semiconductor die may couple to the build-up layer. The composite magnetic inductor beneficially provides a greater inductance than external inductors coupled to the semiconductor package.

公开(公告)号：US11335616B2

公开(公告)日：2022-05-17

申请号：US16498775

申请日：2017-04-28

申请人： Intel Corporation

发明人： Malavarayan Sankarasubramanian ,  Yongki Min ,  Ashay A. Dani ,  Kaladhar Radhakrishnan

IPC分类号： H01L23/31 ,  H01L23/498 ,  H01L23/522

摘要： A semiconductor package may include a composite magnetic inductor that is formed integral with the semiconductor substrate. The composite magnetic inductor may include a composite magnetic resin layer and a plurality of conductive layers arranged such that the composite magnetic resin layer is interleaved between successive conductive layers. The resultant composite magnetic inductor may be disposed between dielectric layers. A core layer may be disposed proximate the composite magnetic inductor. A build-up layer may be disposed proximate the core layer or proximate the composite magnetic inductor in a coreless semiconductor substrate. A semiconductor die may couple to the build-up layer. The composite magnetic inductor beneficially provides a greater inductance than external inductors coupled to the semiconductor package.