Abstract:
Disclosed is an apparatus and a method to inject errors to a memory. In one embodiment, a dedicated interface includes an error injection system address register and an error injection mask register coupled to the error injection system address register. If the error injection system address register includes a system address that matches an incoming write address, the error injection mask register outputs an error to the memory.
Abstract:
Embodiments of the present disclosure describe methods, apparatus, and system configurations for providing rank-specific cyclic redundancy checks in memory systems.
Abstract:
A mechanism is described for achieving high memory reliability, availability, and serviceability (RAS) according to one embodiment of the invention. A method of embodiments of the invention includes detecting a permanent failure of a first memory device of a plurality of memory devices of a first channel of a memory system at a computing system, and eliminating the first failure by merging a first error-correction code (ECC) locator device of the first channel with a second ECC locator device of a second channel, wherein merging is performed at the second channel.
Abstract:
A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.”
Abstract:
A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.”
Abstract:
An apparatus and method are described for store durability and ordering in a persistent memory architecture. For example, one embodiment of a method comprises: performing at least one store operation to one or more addresses identifying at least one persistent memory device, the store operations causing one or more memory controllers to store data in the at least one persistent memory device; sending a request message to the one or more memory controllers instructing the memory controllers to confirm that the store operations are successfully committed to the at least one persistent memory device; ensuring at the one or more memory controllers that at least all pending store operations received at the time of the request message will be committed to the persistent memory device; and sending a response message from the one or more memory controllers indicating that the store operations are successfully committed to the persistent memory device.
Abstract:
Methods, techniques, systems and apparatuses for utilizing reserved space for error correcting functionality. A cache line (“reserved line”) in a plurality of cache lines to store error correcting code (ECC) data is utilized for storing ECC data corresponding to other cache lines within the plurality of cache lines when a memory device has failed.