公开(公告)号：US20040094403A1

公开(公告)日：2004-05-20

申请号：US10294199

申请日：2002-11-14

申请人： International Business Machines Corporation

发明人： Laertis Economikos ,  Hariklia Deligianni ,  John M. Cotte ,  Panayotis C. Andricacos

IPC分类号： C25D017/10

CPC分类号： C25D5/48 ,  C25D17/00 ,  C25D17/001 ,  C25D17/10

摘要： An apparatus for plating and planarizing metal on a substrate includes a plurality of dispensing segments, each having at least one hole for dispensing electroplating solution onto the substrate. The dispensing segments form a circular counterelectrode and are movable with respect to each other during an electroplating process, so that the counterelectrode has a variable diameter. The electroplating solution is thus dispensed on an annular portion of the substrate having a diameter corresponding to the diameter of the counterelectrode; accordingly, the variable-diameter counterelectrode permits localized delivery of the plating solution to the substrate.

摘要翻译： 用于在基底上电镀和平面化金属的装置包括多个分配段，每个分配段具有至少一个用于将电镀溶液分配到衬底上的孔。 分配段形成圆形反电极并且可以在电镀过程期间相对于彼此移动，使得反电极具有可变的直径。 因此，电镀溶液被分配在具有对应于反电极的直径的直径的基底的环形部分上; 因此，可变直径对电极允许将电镀液局部输送到基板。

公开(公告)号：US20040113079A1

公开(公告)日：2004-06-17

申请号：US10320835

申请日：2002-12-16

申请人： International Business Machines Corporation

发明人： John M. Cotte ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Keith R. Pope ,  Robert J. Purtell ,  John P. Simons ,  Charles J. Taft

IPC分类号： G01N021/35

CPC分类号： G01N21/359 ,  G01N21/3504

摘要： A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.

摘要翻译： 提供了一种用于半导体制造工艺的工艺参数的现场监测和分析的方法和装置，包括利用超临界流体或诸如CO 2的高压液体清洗半导体晶片。 该方法和装置利用具有靠近保持高压流体的容器的反射镜的光谱仪。 通过窗口传输到容器中并通过相对的窗口传出容器的NIR辐射被反射和检测和测量，并且确定压力容器中的流体的组成，允许用户基于测量的组成来控制工艺参数。

公开(公告)号：US20040112406A1

公开(公告)日：2004-06-17

申请号：US10320836

申请日：2002-12-16

申请人： International Business Machines Corporation

发明人： John M. Cotte ,  Catherine Ivers ,  Kenneth J. McCullough ,  Wayne M. Moreau ,  Robert J. Purtell ,  John P. Simons ,  William A. Syverson ,  Charles J. Taft

IPC分类号： C25F001/00

CPC分类号： B08B7/0021 ,  H01L21/02063 ,  Y10S134/902

摘要： A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodiment the solidification and vaporizing steps are repeated (cycled) before removal of the CO2 from the vessel. The residues are carried away with the vaporized carbon dioxide.

摘要翻译： 提供了一种方法和装置，用于从诸如半导体晶片的电子部件中除去固体和/或液体残留物，其中所述液体或超临界二氧化碳在晶片的表面上固化，然后蒸发并从系统中除去。 在优选的实施方案中，在从容器中除去CO 2之前重复（循环）固化和蒸发步骤。 残余物被蒸发的二氧化碳带走。

公开(公告)号：US20030211312A1

公开(公告)日：2003-11-13

申请号：US10456299

申请日：2003-06-06

申请人： International Business Machines Corporation

发明人： John M. Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Kevin Petrarca ,  John P. Simons ,  Charles J. Taft ,  Richard Volant

IPC分类号： B32B003/26

CPC分类号： H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/249978 ,  Y10T428/24999 ,  H01L2924/00

摘要： A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

公开(公告)号：US20030008129A1

公开(公告)日：2003-01-09

申请号：US09893104

申请日：2001-06-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John M. Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Kevin Petrarca ,  John P. Simons ,  Charles J. Taft ,  Richard Volant

IPC分类号： B32B003/26

CPC分类号： H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/249978 ,  Y10T428/24999 ,  H01L2924/00

摘要： A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

摘要翻译： 在将二氧化碳保持在液态或超临界状态的热力学条件下，通过使低介电常数聚合物与液体或超临界二氧化碳接触而形成的电介质材料，其中形成多孔产品。 因此，热力学条件改变为环境，其中二氧化碳从孔中逸出并被空气替代。

公开(公告)号：US20040113235A1

公开(公告)日：2004-06-17

申请号：US10319724

申请日：2002-12-13

申请人： International Business Machines Corporation

发明人： Douglas D. Coolbaugh ,  John M. Cotte ,  Ebenezer E. Eshun ,  Kenneth J. Stein ,  Kunal Vaed ,  Richard P. Volant

IPC分类号： H01L029/00 ,  H01L021/20

CPC分类号： H01L28/90 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02258 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/76807 ,  H01L21/76831 ,  H01L28/40 ,  H01L28/86

摘要： The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures may be used in analog and mixed signal applications. The capacitor is formed within a trench with pedestals within the trench to provide additional surface area. The top and bottom electrodes are created using damascene integration scheme. The dielectric layer is created as a multilayer dielectric film comprising for instance Al2O3, Al2O3/Ta2O5, Al2O3/Ta2O5/Al2O3 and the like. The dielectric layer may be deposited by methods like atomic layer deposition or chemical vapor deposition. The dielectric layer used in the capacitor may also be produced by anodic oxidation of a metallic precursor to yield a high dielectric constant oxide layer.

摘要翻译： 本发明涉及具有高k电介质层的独特的高表面积BEOL电容器结构及其制造方法。 这些高表面积BEOL电容器结构可用于模拟和混合信号应用。 电容器形成在具有沟槽内的基座的沟槽内，以提供额外的表面积。 顶部和底部电极使用大马士革集成方案创建。 电介质层被形成为包括例如Al 2 O 3，Al 2 O 3 / Ta 2 O 5，Al 2 O 3 / Ta 2 O 5 / Al 2 O 3等的多层电介质膜。 电介质层可以通过诸如原子层沉积或化学气相沉积的方法沉积。 电容器中使用的电介质层也可以通过金属前体的阳极氧化产生高介电常数氧化物层。

公开(公告)号：US20040094511A1

公开(公告)日：2004-05-20

申请号：US10300468

申请日：2002-11-20

申请人： International Business Machines Corporation

发明人： Soon-Cheon Seo ,  Wei-Tsu Tseng ,  Darryl D. Restaino ,  James E. Fluegel ,  Richard O. Henry ,  John M. Cotte ,  Mahadevaiyer Krishnan ,  Hariklia Deligianni ,  Philippe Mark Vereecken ,  Stephen E. Greco

IPC分类号： C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC分类号： H01L21/7684 ,  C25D5/18 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/76879

摘要： A method for controlling the shape of copper features, having the following steps: a) plating a copper feature with a predetermined final shape onto a copper seed layer in a plating bath for a first plating time using a first plating method, wherein the first plating time is less than the total length of time necessary to plate the substantially all of the final shape; and b) electrically treating the plated copper feature in a copper plating bath for a second period of time, the second period of time sufficient to at least form the predetermined final shape.

摘要翻译： 一种用于控制铜特征形状的方法，具有以下步骤：a）使用第一镀覆方法将具有预定最终形状的铜特征镀在电镀浴中的铜种子层上，用于第一电镀时间，其中第一镀层 时间小于对基本上所有最终形状进行平板所需的总时间长度; 以及b）在镀铜浴中电镀铜电镀第二时间段，所述第二时间段足以至少形成预定的最终形状。

公开(公告)号：US20040094427A1

公开(公告)日：2004-05-20

申请号：US10294200

申请日：2002-11-14

申请人： International Business Machines Corporation

发明人： Laertis Economikos ,  Hariklia Deligianni ,  John M. Cotte ,  Henry J. Grabarz ,  Bomy Chen

IPC分类号： C25D005/48

CPC分类号： C25D7/123 ,  C25D5/48 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  Y10S205/917

摘要： A method and apparatus are described for performing both electroplating of a metal layer and planarization of the layer on a substrate. Electroplating and electroetching of metal (such as copper) are performed in a repeated sequence, followed by chemical-mechanical polishing. An electroplating solution, electroetching solution, and a non-abrasive slurry are dispensed on a polishing pad in the respective process steps. The substrate is held against the pad with a variable force in accordance with the process, so that the spacing between substrate and pad may be less during electroplating than during electroetching.

摘要翻译： 描述了用于执行金属层的电镀和在衬底上的层的平坦化的方法和装置。 以重复的顺序进行金属（如铜）的电镀和电蚀刻，然后进行化学机械抛光。 电镀溶液，电蚀溶液和非研磨浆料在相应的工艺步骤中分配在抛光垫上。 根据该工艺，衬底以可变的力保持抵靠衬垫，使得电镀期间衬底和衬垫之间的间隔可能比在电蚀期间更小。

公开(公告)号：US20030059992A1

公开(公告)日：2003-03-27

申请号：US09961009

申请日：2001-09-21

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： John M. Cotte ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

IPC分类号： H01L021/337

CPC分类号： H01L28/24 ,  H01C17/262

摘要： A method of improving the tolerance of a back-end-of-the-line (BEOL) thin film resistor is provided. Specifically, the method of the present invention includes an anodization step which is capable of converting a portion of base resistor film into an anodized region. The anodized resistor thus formed has a sheet resistivity that is higher than that of the base resistor film.

摘要翻译： 提供了一种改进后端（BEOL）薄膜电阻的公差的方法。 具体地，本发明的方法包括能够将基极电阻膜的一部分转变为阳极氧化区域的阳极氧化步骤。 如此形成的阳极氧化电阻的电阻率比基极电阻膜高。