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    Atomic layer deposition reactor
    2.
    发明申请
    Atomic layer deposition reactor 审中-公开
    原子层沉积反应器

    公开(公告)号：US20050092249A1

    公开(公告)日：2005-05-05

    申请号：US10991556

    申请日：2004-11-18

    申请人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

    发明人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

    IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/507 ,  C23C16/509 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

    摘要： Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

    摘要翻译： 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 在一个实施方案中，反应器包括反应室。 喷头板将反应室分成上部和下部。 第一前体指向反应室的下半部分，第二前体指向反应室的上半部分。 基板设置在反应室的下半部内。 喷头板包括多个通道，使得上半部分与反应室的下半部连通。 在另一种布置中，反应室的上半部限定了其中形成原位自由基的等离子体腔。 在另一种布置中，反应室包括挡板，其被构造成选择性地打开和关闭喷头板中的通道。 在其他布置中，喷头板被布置成改变流过反应室的气体的局部流动模式。

    Atomic layer deposition reactor
    4.
    发明授权
    Atomic layer deposition reactor 有权
    原子层沉积反应器

    公开(公告)号：US06820570B2

    公开(公告)日：2004-11-23

    申请号：US10222005

    申请日：2002-08-14

    申请人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

    发明人： Olli Kilpela ,  Ville Saanila ,  Wei-Min Li ,  Kai-Erik Elers ,  Juhana Kostamo ,  Ivo Raaijmakers ,  Ernst Granneman

    IPC分类号： C23C16509

    CPC分类号： C23C16/45544 ,  C23C16/4412 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/507 ,  C23C16/509

    摘要： Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. In one embodiment, the reactor comprises a reaction chamber. A showerhead plate divides the reaction chamber into upper and lower parts. A first precursor is directed towards the lower half of the reaction chamber and a second precursor is directed towards the upper half of the reaction chamber. The substrate is disposed within the lower half of the reaction chamber. The showerhead plate includes plurality passages such that the upper half is in communication with the lower half of the reaction chamber. In another arrangement, the upper half of the reaction chamber defines a plasma cavity in which in-situ radicals are formed. In yet another arrangement, the reaction chamber includes a shutter plate, which is configured to selectively open and close the passages in the showerhead plate. In other arrangements, the showerhead plate is arranged to modify the local flow patterns of the gases flowing through the reaction chamber.

    摘要翻译： 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 在一个实施方案中，反应器包括反应室。 喷头板将反应室分成上部和下部。 第一前体指向反应室的下半部分，第二前体指向反应室的上半部分。 基板设置在反应室的下半部内。 喷头板包括多个通道，使得上半部分与反应室的下半部连通。 在另一种布置中，反应室的上半部限定了其中形成原位自由基的等离子体腔。 在另一种布置中，反应室包括挡板，其构造成选择性地打开和关闭喷头板中的通道。 在其他布置中，喷头板被布置成改变流过反应室的气体的局部流动模式。

    TRENCH ISOLATION STRUCTURES FOR INTEGRATED CIRCUITS
    6.
    发明申请
    TRENCH ISOLATION STRUCTURES FOR INTEGRATED CIRCUITS 审中-公开
    用于集成电路的稳压隔离结构

    公开(公告)号：US20070287261A1

    公开(公告)日：2007-12-13

    申请号：US11844227

    申请日：2007-08-23

    申请人： Ivo Raaijmakers ,  Pekka Soininen ,  Ernst Granneman

    发明人： Ivo Raaijmakers ,  Pekka Soininen ,  Ernst Granneman

    IPC分类号： H01L21/762

    CPC分类号： H01L21/02164 ,  H01L21/02145 ,  H01L21/02178 ,  H01L21/02216 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/76224

    摘要： A dielectric film is formed by atomic layer deposition to conformally fill a narrow, deep trench for device isolation. The method of the illustrated embodiments includes alternately pulsing vapor-phase reactants in a string of cycles, where each cycle deposits no more than about a monolayer of material, capable of completely filling high aspect ratio trenches. Additionally, the trench-fill material composition can be tailored by processes described herein, particularly to match the coefficient of thermal expansion (CTE) to that of the surrounding substrate within which the trench is formed. Mixed phases of mullite and silica have been found to meet the goals of device isolation and matched CTE. The described process includes mixing atomic layer deposition cycles of aluminum oxide and silicon oxide in ratios selected to achieve the desired composition of the isolation material, namely on the order of 30% alumina and 70% silicon oxide by weight.

    摘要翻译： 通过原子层沉积形成电介质膜，以保形地填充狭窄的深沟槽，用于器件隔离。 所示实施方案的方法包括交替地以一系列循环脉冲气相反应物，其中每个循环不超过约单层材料，能够完全填充高纵横比沟槽。 此外，沟槽填充材料组合物可以通过本文所述的方法来定制，特别是使热膨胀系数（CTE）与其中形成沟槽的周围基底的热膨胀系数相匹配。 已经发现莫来石和二氧化硅的混合相达到器件隔离和匹配CTE的目标。 所描述的方法包括以选择的比例混合氧化铝和氧化硅的原子层沉积循环，以达到分离材料的所需组成，即按重量计30％氧化铝和70％氧化硅。

    Oxygen bridge structures and methods to form oxygen bridge structures
    9.
    发明授权
    Oxygen bridge structures and methods to form oxygen bridge structures 有权
    氧桥结构和形成氧桥结构的方法

    公开(公告)号：US07034397B2

    公开(公告)日：2006-04-25

    申请号：US10696244

    申请日：2003-10-28

    申请人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

    发明人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

    IPC分类号： H01L23/48 ,  H01L21/4763

    CPC分类号： H01L21/76846 ,  C23C16/0272 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

    摘要翻译： 提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。 扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。 包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面 在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。 然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。 此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。