公开(公告)号：US20110284100A1

公开(公告)日：2011-11-24

申请号：US13110184

申请日：2011-05-18

申请人： JOZEF KUDELA ,  JONGHOON BAEK ,  JOHN M. WHITE ,  ROBIN TINER ,  SUHAIL ANWAR ,  GAKU FURUTA

发明人： JOZEF KUDELA ,  JONGHOON BAEK ,  JOHN M. WHITE ,  ROBIN TINER ,  SUHAIL ANWAR ,  GAKU FURUTA

IPC分类号： F16L3/00

CPC分类号： B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

摘要翻译： 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

公开(公告)号：US20100311249A1

公开(公告)日：2010-12-09

申请号：US12794756

申请日：2010-06-06

申请人： JOHN M. WHITE ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

发明人： JOHN M. WHITE ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： H01L21/46 ,  C23C16/455 ,  C23C16/00 ,  C23C16/513 ,  C23C16/30 ,  C23C14/00 ,  H05H1/24 ,  C23C16/56

CPC分类号： C23C16/45565 ,  C23C16/45591 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

摘要： Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.

摘要翻译： 本公开的实施例通常提供用于在真空处理室中处理衬底的方法和装置。 在一个实施例中，提供真空处理室，其包括设置在室主体上的室主体和盖。 阻挡板联接到盖子并且与其分隔起来。 气体分配板联接到盖子上。 气体分配板将限定在气体分配板和阻挡板之间的主增压室与室主体内限定的过程体积分开。 气体分配板和阻挡板限定了它们之间的间隔梯度，其影响主增压室内气体的混合。

公开(公告)号：US20090283039A1

公开(公告)日：2009-11-19

申请号：US12467477

申请日：2009-05-18

申请人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

发明人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

IPC分类号： C23C16/54 ,  F28D7/00

CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

摘要翻译： 本发明通常包括组件之间的联接。 当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。 反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。 因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。 然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。 因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

公开(公告)号：US20090274830A1

公开(公告)日：2009-11-05

申请号：US12431455

申请日：2009-04-28

申请人： JOHN M. WHITE ,  Takehara TAKAKO

发明人： JOHN M. WHITE ,  Takehara TAKAKO

IPC分类号： B05D5/12 ,  B05C5/00 ,  C23C16/54

CPC分类号： H01L51/56

摘要： The present invention generally relates to a method and an apparatus for processing one or more substrates on a roll to roll system. The one or more substrates may pass through several processing chambers to deposit the layers necessary to produce an OLED structure. The processing chambers may include ink jetting chambers, chemical vapor deposition (CVD) chambers, physical vapor deposition (PVD) chambers, and annealing chambers. Additional chambers may also be present.

摘要翻译： 本发明一般涉及一种用于在卷对卷系统上处理一个或多个基板的方法和装置。 一个或多个衬底可以通过几个处理室以沉积产生OLED结构所必需的层。 处理室可以包括喷墨室，化学气相沉积（CVD）室，物理气相沉积（PVD）室和退火室。 还可以存在附加的室。

公开(公告)号：US20080072929A1

公开(公告)日：2008-03-27

申请号：US11565400

申请日：2006-11-30

申请人： JOHN M. WHITE

发明人： JOHN M. WHITE

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4412

摘要： The present invention comprises a method and an apparatus for recirculating a process gas through a system. The process gas may be evacuated from the chamber, and a portion of the process gas may pass through at least a particle trap/filter while another portion of the process gas may be evacuated through mechanical backing pumps. The process gas that passes through the particle trap/filter may then join fresh, unrecirculated process gas and enter the processing chamber. The recirculated gas may join the fresh, unrecirculated processing gas after the fresh, unrecirculated processing gas has passed through a remote plasma source. The plasma generated in the remote plasma source may ensure that the recirculated process gas does not deposit on the conduits leading into the process chamber. The amount of gas recirculated may determine the amount of fresh, unrecirculated process gas that may be delivered to the process chamber.

摘要翻译： 本发明包括一种用于使工艺气体再循环通过系统的方法和装置。 工艺气体可以从室抽真空，并且一部分工艺气体可以通过至少一个颗粒捕集器/过滤器，而另一部分工艺气体可以通过机械背衬泵抽空。 然后，通过颗粒捕集器/过滤器的工艺气体可以连接新鲜的未循环的处理气体并进入处理室。 新鲜的未循环处理气体通过远程等离子体源之后，再循环的气体可以连接新鲜的未循环的处理气体。 在远程等离子体源中产生的等离子体可以确保再循环的工艺气体不会沉积在通向处理室的管道上。 再循环的气体量可以确定可能被输送到处理室的新鲜的，未循环的处理气体的量。

公开(公告)号：US20090104732A1

公开(公告)日：2009-04-23

申请号：US11873617

申请日：2007-10-17

申请人： JOHN M. WHITE

发明人： JOHN M. WHITE

IPC分类号： H01L31/18 ,  C23C16/00

CPC分类号： H01L31/1804 ,  C23C16/5096 ,  C23C16/54 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention generally comprises a method and apparatus for supplemental pumping, gas feed, and/or RF current for a process. When depositing amorphous silicon, the amount of process gases, RF current, and vacuum may be less than the amount of process gases, RF current, and vacuum necessary to deposit microcrystalline silicon. When a single chamber is used to deposit both amorphous and microcrystalline silicon, coupling a supplemental power supply, a supplemental gas source, and a supplemental vacuum pump to the chamber may be beneficial. The supplemental power supply, vacuum pump, and gas source, may be coupled with the chamber when the microcrystalline silicon is deposited and uncoupled when amorphous silicon is deposited. In a cluster tool arrangement, the supplemental power supply, vacuum pump, and gas source may serve multiple chambers that each deposit both amorphous and microcrystalline silicon.

摘要翻译： 本发明通常包括用于过程的补充泵送，气体进料和/或RF电流的方法和装置。 当沉积非晶硅时，工艺气体的量，RF电流和真空度可以小于沉积微晶硅所需的工艺气体，RF电流和真空的量。 当使用单个室来沉积非晶硅和微晶硅时，将辅助电源，补充气体源和补充真空泵耦合到腔室可能是有益的。 补充电源，真空泵和气源可以在微晶硅沉积时与腔室耦合，当非晶硅沉积时，该电解质分离。 在集群工具装置中，补充电源，真空泵和气体源可以服务于多个室，每个室均沉积非晶硅和微晶硅。

公开(公告)号：US20080296142A1

公开(公告)日：2008-12-04

申请号：US11754983

申请日：2007-05-29

申请人： HIEN-MINH HUU LE ,  BRADLEY O. STIMSON ,  JOHN M. WHITE

发明人： HIEN-MINH HUU LE ,  BRADLEY O. STIMSON ,  JOHN M. WHITE

IPC分类号： C23C14/00 ,  C25B5/00

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A method and apparatus for uniformly eroding a sputtering target is disclosed. As a racetrack shaped magnetic field formed by a magnetron moves across the sputtering surface of the sputtering target, one or more magnets within the magnetron may swing or pivot relative to other magnets within the magnetron to reduce magnetic field pinching at the turns in the racetrack shaped magnetic field. The swinging or pivoting magnets alter the location on the magnetic field at a turn in the racetrack shape where the coordinate of the magnetic field perpendicular to the sputtering surface equals zero. By altering the location, sputtering target erosion uniformity may be increased.

摘要翻译： 公开了一种用于均匀侵蚀溅射靶的方法和装置。 当由磁控管形成的赛道形状的磁场移动穿过溅射靶的溅射表面时，磁控管内的一个或多个磁体可以相对于磁控管内的其它磁体摆动或枢转，以减少在跑道形状的转弯处的磁场夹紧 磁场。 摆动或旋转的磁体在跑道转弯处改变磁场上的位置，其中垂直于溅射表面的磁场的坐标等于零。 通过改变位置，可以增加溅射靶侵蚀均匀性。

公开(公告)号：US20090060687A1

公开(公告)日：2009-03-05

申请号：US11846389

申请日：2007-08-28

申请人： JOHN M. WHITE

发明人： JOHN M. WHITE

IPC分类号： H01L21/677 ,  G06F19/00

CPC分类号： H01L21/67201 ,  H01L21/67126 ,  H01L21/67196 ,  H01L21/68792

摘要： Embodiments of the invention include a vacuum transfer chamber having one rolling or more rolling diaphragm providing a seal between a robot disposed in the transfer chamber and the transfer chamber and a method for using a substrate transfer chamber having the same.

摘要翻译： 本发明的实施例包括具有一个滚动或更多滚动隔膜的真空传送室，其提供设置在传送室中的机器人与传送室之间的密封，以及使用其具有该传送室的基板传送室的方法。

公开(公告)号：US20080072822A1

公开(公告)日：2008-03-27

申请号：US11846359

申请日：2007-08-28

申请人： JOHN M. WHITE

发明人： JOHN M. WHITE

IPC分类号： C23C16/00 ,  B01D53/14

CPC分类号： C23C16/4412 ,  B01D46/006 ,  B01D46/4218 ,  C23C16/4405 ,  Y02C20/30

摘要： The present invention comprises a method and an apparatus that include a particle trap/filter for recirculating a processing gas through a system. The processing gas may be evacuated from the chamber and may pass through a particle trap/filter. A portion of the gas may recirculate back to the processing chamber while another portion of the process gas may be evacuated through mechanical backing pumps. As the processing gas flows through the particle trap/filter, contaminant substances may be captured by a filter medium inside the particle trap/filter. The recirculated portion of the processing gas may then join fresh, unrecirculated process gas and enter the processing chamber. The recirculated gas may join the fresh, unrecirculated processing gas after the fresh, unrecirculated processing gas has passed through a remote plasma source. The plasma generated in the remote plasma source may ensure that the recirculated process gas does not deposit on the conduits leading into the process chamber. The amount of gas recirculated may determine the amount of fresh, unrecirculated process gas that may be delivered to the process chamber.

摘要翻译： 本发明包括一种包括用于使处理气体通过系统再循环的颗粒捕集器/过滤器的方法和装置。 处理气体可以从室排出并且可以通过颗粒捕集器/过滤器。 气体的一部分可以再循环回处理室，而另一部分工艺气体可以通过机械背衬泵排空。 当处理气体流过颗粒捕集器/过滤器时，污染物质可以通过颗粒捕集器/过滤器内的过滤介质捕获。 处理气体的再循环部分然后可以连接新鲜的未循环的处理气体并进入处理室。 新鲜的未循环处理气体通过远程等离子体源之后，再循环的气体可以连接新鲜的未循环的处理气体。 在远程等离子体源中产生的等离子体可以确保再循环的工艺气体不会沉积在通向处理室的管道上。 再循环的气体量可以确定可能被输送到处理室的新鲜的，未循环的处理气体的量。

公开(公告)号：US20090233387A1

公开(公告)日：2009-09-17

申请号：US12370389

申请日：2009-02-12

申请人： JOHN M. WHITE

发明人： JOHN M. WHITE

IPC分类号： H01L33/00 ,  C23C16/54

CPC分类号： C23C16/545 ,  H01J37/32009 ,  H01J37/3277

摘要： The present invention generally relates to a method and apparatus for depositing a layer onto a substrate as the substrate is moving through the processing chamber. The substrate may move along a roll to roll system. A roll to roll system is a system where a substrate may be unwound from a first roll so that the substrate may undergo processing and then re-wound onto a second roll after the processing. As the substrate moves through the processing chamber, a plasma source may produce a plasma. An electrical bias applied to the substrate may draw the plasma to the substrate and hence, permit deposition of material onto the substrate as the substrate moves through the chamber.

摘要翻译： 本发明一般涉及当衬底移动通过处理室时将层沉积到衬底上的方法和装置。 衬底可以沿着辊到辊系统移动。 卷对卷系统是其中基材可以从第一辊展开的系统，使得基材可以经过加工，然后在加工后重新缠绕到第二辊上。 当衬底移动通过处理室时，等离子体源可产生等离子体。 施加到衬底的电偏压可以将等离子体吸引到衬底，并且因此当衬底移动通过腔室时，允许材料沉积到衬底上。