公开(公告)号：US06435428B2

公开(公告)日：2002-08-20

申请号：US09776004

申请日：2001-02-02

申请人： Jae Ho Kim ,  In Chel Shin ,  Sang Joon Park ,  Kwan Goo Rha ,  Sang Ho Kim

发明人： Jae Ho Kim ,  In Chel Shin ,  Sang Joon Park ,  Kwan Goo Rha ,  Sang Ho Kim

IPC分类号： B05B114

CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/32082 ,  H01L21/67069

摘要： There is disclosed a showerhead apparatus for radical-assisted deposition including a showerhead of a two-stair structure separated by a given distance, which has a first buffer for uniformly distributing a raw material gas and a second buffer for uniformly distributing a plasma gas, wherein a plasma is generated within the showerheads and the raw material gas sprayed into the plasma is constantly maintained, thus forming a uniform thin film on a wafer or a substrate. The showerhead apparatus for radical-assisted deposition comprises a raw material gas spray mechanism including a first buffer which is divided into upper and lower layers for uniformly distributing a gas introduced from a raw material gas injection tube, wherein a plurality of raw material gas spray holes for spraying the raw material gas distributed within the first buffer at a given flow rate is formed at a lower plate of the spray mechanism; a plasma generating gas spray mechanism including a second buffer for uniformly distributing a plasma generating gas between with the raw material gas spray mechanism, wherein a plurality of plasma generating gas spray holes and through holes for spraying the plasma generating gas distributed within the second buffer are formed at a lower plate of the spray mechanism, respectively; a guide mechanism for communicating the raw material gas spray holes in the raw material gas spray mechanism and the through holes in the plasma generating gas spray mechanism and for inducing the raw material gas and the plasma generating gas so that they are not mixed; and a RF generating mechanism mounted at one outside side of the raw material gas spray mechanism, wherein a RF rod for applying an outside RF power is included at a lower plate of the RF generating mechanism.

摘要翻译： 公开了一种用于自由基辅助沉积的喷头装置，包括分隔给定距离的两层结构的喷头，其具有用于均匀分布原料气体的第一缓冲器和用于均匀分布等离子体气体的第二缓冲器，其中 在喷淋头内产生等离子体，并且恒定地保持喷射到等离子体中的原料气体，从而在晶片或基板上形成均匀的薄膜。 用于自由基辅助沉积的喷头装置包括原料气体喷射机构，其包括分为上层和下层的第一缓冲器，用于均匀分布从原料气体注入管引入的气体，其中多个原料气体喷射孔 在喷雾机构的下板形成用于以给定流量喷射分布在第一缓冲器内的原料气体; 一种等离子体产生气体喷射机构，包括用于在原料气体喷射机构之间均匀分布等离子体产生气体的第二缓冲器，其中多个等离子体产生气体喷射孔和用于喷射分布在第二缓冲器内的等离子体产生气体的通孔 分别形成在喷雾机构的下板上; 用于使原料气体喷射机构中的原料气体喷射孔和等离子体产生气体喷射机构中的通孔连通并引导原料气体和等离子体产生气体使其不混合的引导机构; 以及安装在原料气体喷射机构的一个外侧的RF产生机构，其中用于施加外部RF功率的RF杆包括在RF发生机构的下板处。

公开(公告)号：USD647412S1

公开(公告)日：2011-10-25

申请号：US29375621

申请日：2010-09-24

申请人： Kwan Goo Rha

设计人： Kwan Goo Rha

公开(公告)号：US08980049B2

公开(公告)日：2015-03-17

申请号：US12531068

申请日：2008-04-01

申请人： Won Haeng Lee ,  Kwan Goo Rha ,  Jung Hee Lee ,  Chul Hee Jang ,  Hyang Joo Lee ,  Dong Wan Kim

发明人： Won Haeng Lee ,  Kwan Goo Rha ,  Jung Hee Lee ,  Chul Hee Jang ,  Hyang Joo Lee ,  Dong Wan Kim

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/67069 ,  H01L21/6831 ,  H01L21/68742

摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

摘要翻译： 提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。 提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极， 边缘区域。 提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。

公开(公告)号：US06291850B1

公开(公告)日：2001-09-18

申请号：US09435366

申请日：1999-11-08

申请人： Byung Jae Choi ,  Kwan Goo Rha ,  Hong Seok Kim ,  Jae Young An

发明人： Byung Jae Choi ,  Kwan Goo Rha ,  Hong Seok Kim ,  Jae Young An

IPC分类号： H01L27108

CPC分类号： H01L28/84 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/91

摘要： A structure of a lower electrode of a capacitor includes a first lower electrode, second lower electrodes formed at both sides of the first lower electrode and electrically connected to and higher than the first lower electrode, and a Hemispherical Grain-Silicon (HSG-Si) layer formed on a top surface of the first lower electrode and inside walls of the second lower electrodes.

摘要翻译： 电容器的下电极的结构包括：第一下电极，形成在第一下电极的两侧并与第一下电极电连接并高于第一下电极的第二下电极，以及半球晶格硅（HSG-Si） 层形成在第一下电极的顶表面和第二下电极的内壁上。

公开(公告)号：US20130200437A1

公开(公告)日：2013-08-08

申请号：US13824367

申请日：2011-10-18

申请人： Kwan Goo Rha

发明人： Kwan Goo Rha

IPC分类号： H01L21/306 ,  H01L29/66 ,  G01N27/414

CPC分类号： H01L21/30604 ,  G01N27/4146 ,  H01L29/66409

摘要： Provided is a method of forming a nanogap pattern of a biosensor. First, an oxide layer is formed on a substrate and a first nitride layer is formed on the oxide layer. The first nitride layer is partially etched to form a first nitride layer pattern having a first gap that gradually narrows from a top portion to a bottom portion thereof and exposes the oxide layer. A second nitride layer is formed along the first nitride layer and along sidewalls and a bottom surface of the first gap. The second nitride layer is etched to form a second nitride layer pattern having a second gap narrower than the first gap on the sidewalls of the first gap. The oxide layer is etched by using the second nitride layer pattern as an etching mask to form an oxide layer pattern having a third gap, and thus, the nanogap pattern is completed.

摘要翻译： 提供一种形成生物传感器的纳米斑图案的方法。 首先，在基板上形成氧化物层，在氧化物层上形成第一氮化物层。 第一氮化物层被部分蚀刻以形成第一氮化物层图案，其具有从顶部到底部逐渐变窄的第一间隙，并暴露氧化物层。 沿着第一氮化物层并且沿着第一间隙的侧壁和底表面形成第二氮化物层。 蚀刻第二氮化物层以形成具有比第一间隙的侧壁上的第一间隙窄的第二间隙的第二氮化物层图案。 通过使用第二氮化物层图案作为蚀刻掩模来蚀刻氧化物层，以形成具有第三间隙的氧化物层图案，从而完成纳米图案。

公开(公告)号：USD664459S1

公开(公告)日：2012-07-31

申请号：US29375625

申请日：2010-09-24

申请人： Kwan Goo Rha

设计人： Kwan Goo Rha

公开(公告)号：US06376893B1

公开(公告)日：2002-04-23

申请号：US09638866

申请日：2000-08-15

申请人： Kwan Goo Rha

发明人： Kwan Goo Rha

IPC分类号： H01L21764

CPC分类号： H01L21/764 ,  H01L21/76229 ,  H01L21/76232

摘要： Trench isolation structure includes a first conformal insulating film (preferably consisting of silicon nitride) which lines a trench etched in a silicon substrate, an insulating layer (preferably consisting of silicon dioxide) which caps the lined trench and thereby forms a cavity, and a gas (preferably consisting of carbon dioxide) within the cavity. Fabrication of the trench isolation structure is begun by depositing a first conformal insulating film onto the surface of a trench etched in a silicon substrate, thereby forming a lined trench. An amorphous carbon layer is deposited within the lined trench and the lined trench is capped by an insulating layer which encloses the amorphous carbon within a cavity. The solid amorphous carbon within the cavity is converted to carbon dioxide gas by annealing the substrate in an oxidizing ambient. Planarizing the insulating layer to the level of the substrate completes fabrication of the trench isolation structure.

摘要翻译： 沟槽隔离结构包括第一共形绝缘膜（优选由氮化硅组成），其对在硅衬底中蚀刻的沟槽进行排列，绝缘层（优选由二氧化硅组成），其封盖衬里的沟槽并由此形成空腔，并且气体 （优选由二氧化碳组成）。 通过在蚀刻在硅衬底中的沟槽的表面上沉积第一保形绝缘膜开始制造沟槽隔离结构，由此形成衬里的沟槽。 在衬里的沟槽内沉积无定形碳层，并且衬里的沟槽被封闭在空腔内的无定形碳的绝缘层封盖。 空腔内的固体无定形碳通过在氧化环境中退火衬底而转化为二氧化碳气体。 将绝缘层平坦化到衬底的层面完成了沟槽隔离结构的制造。

公开(公告)号：US6127241A

公开(公告)日：2000-10-03

申请号：US195558

申请日：1998-11-19

申请人： Kwan Goo Rha

发明人： Kwan Goo Rha

IPC分类号： H01L21/22 ,  H01L21/265 ,  H01L21/336 ,  H01L21/762 ,  H01L29/786 ,  H01L21/764

CPC分类号： H01L29/66772 ,  H01L21/76264 ,  H01L29/78612 ,  H01L29/78654 ,  H01L21/26506 ,  H01L21/76267 ,  H01L21/76283 ,  H01L29/66545

摘要： Trench isolation structure includes a first conformal insulating film (preferably consisting of silicon nitride) which lines a trench etched in a silicon substrate, an insulating layer (preferably consisting of silicon dioxide) which caps the lines trench and thereby forms a cavity, and a gas (preferably consisting of carbon dioxide) within the cavity. Fabrication of the trench isolation structure is begun by depositing a first conformal insulating film onto the surface of a trench etched in a silicon substrate, thereby forming a lined trench. An amorphous carbon layer is deposited within the lined trench and the lined trench is capped by an insulating layer which encloses the amorphous carbon within a cavity. The solid amorphous carbon within the cavity is converted to carbon dioxide gas by annealing the substrate in an oxidizing ambient. Planarizing the insulating layer to the level of the substrate completes fabrication of the trench isolation structure.

摘要翻译： 沟槽隔离结构包括在硅衬底中蚀刻的沟槽的第一共形绝缘膜（优选由氮化硅组成），覆盖线沟槽并由此形成空腔的绝缘层（优选由二氧化硅组成） （优选由二氧化碳组成）。 通过在蚀刻在硅衬底中的沟槽的表面上沉积第一保形绝缘膜开始制造沟槽隔离结构，从而形成衬里的沟槽。 在衬里的沟槽内沉积无定形碳层，并且衬里的沟槽被封闭在空腔内的无定形碳的绝缘层封盖。 空腔内的固体无定形碳通过在氧化环境中退火衬底而转化为二氧化碳气体。 将绝缘层平坦化到衬底的层面完成了沟槽隔离结构的制造。

公开(公告)号：US08888950B2

公开(公告)日：2014-11-18

申请号：US12528326

申请日：2008-03-13

申请人： Kyung Ho Lee ,  Jae Ho Guahk ,  Jae Chul Choi ,  Young Ki Han ,  Hee Se Lee ,  Yong Hwan Lim ,  Kwan Goo Rha ,  Seng Hyun Chung ,  Sun Q Jeon ,  Jung Hee Lee

发明人： Kyung Ho Lee ,  Jae Ho Guahk ,  Jae Chul Choi ,  Young Ki Han ,  Hee Se Lee ,  Yong Hwan Lim ,  Kwan Goo Rha ,  Seng Hyun Chung ,  Sun Q Jeon ,  Jung Hee Lee

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67069 ,  H01J37/32431 ,  H01J2237/20 ,  H01L21/0209 ,  H01L21/68735 ,  H01L21/68742

摘要： There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

摘要翻译： 提供了一种能够可靠地支撑诸如其上形成有预定薄膜图案的装置的基板的基板的基板支撑件，以去除形成在基板的后表面上的各种杂质，以及具有该基板的等离子体处理装置。 等离子体处理装置包括：至少一个臂; 以及从臂朝向基板的基板安置位置延伸的支撑部，使得与常规干蚀刻相比，等离子体处理装置可以减少电弧放电的可能性，以提高工艺成品率和产品可靠性，并且确保基板的稳定安装 。

公开(公告)号：US20100096084A1

公开(公告)日：2010-04-22

申请号：US12531068

申请日：2008-04-01

申请人： Won Haeng Lee ,  Kwan Goo Rha ,  Jung Hee Lee ,  Chul Hee Jang ,  Hyang Joo Lee ,  Dong Wan Kim

发明人： Won Haeng Lee ,  Kwan Goo Rha ,  Jung Hee Lee ,  Chul Hee Jang ,  Hyang Joo Lee ,  Dong Wan Kim

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01L21/6831 ,  H01L21/68742

摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

摘要翻译： 提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。 提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极， 边缘区域。 提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。