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    Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide
    1.
    发明授权
    Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide 失效
    在半导体器件中形成栅电极的方法，包括用于抑制栅极氧化物的厚度的再氧化

    公开(公告)号：US06905927B2

    公开(公告)日：2005-06-14

    申请号：US10680813

    申请日：2003-10-07

    申请人： Jae-Young Ahn ,  Bong-Hyun Kim ,  Jae-Duk Lee ,  Man-Sug Kang

    发明人： Jae-Young Ahn ,  Bong-Hyun Kim ,  Jae-Duk Lee ,  Man-Sug Kang

    IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/115

    CPC分类号： H01L21/28247 ,  H01L21/28061 ,  H01L21/28176 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521

    摘要： A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/or a sidewall of the conductive layer pattern, with damage cured therein by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased.

    摘要翻译： 公开了一种半导体器件和制造方法，该方法包括在半导体衬底上形成初步栅电极，该初步栅电极包括栅极氧化层图案和层叠在栅氧化层图案上的导电层图案， 用于固化半导体衬底和/或导电层图案的侧壁的损伤的氧化工艺，当通过在预选栅电极的外表面上和在半导体衬底上形成氧化物层而形成预备栅电极时， 氧气和含氯气体，同时抑制栅极氧化物层图案的厚度增加; 并且所述半导体器件包括形成在半导体衬底上的初步栅电极，所述预选栅电极包括栅极氧化物层图案和层叠在所述栅极氧化物层图案上的导电层图案，以及再氧化半导体衬底和/或侧壁 的导电层图案，其中通过供给氧气和含氯气体同时抑制其中的腐蚀而同时抑制栅极氧化物层图案的厚度增加。

    Method for forming a gate electrode in a semiconductor device
    2.
    发明授权
    Method for forming a gate electrode in a semiconductor device 有权

    公开(公告)号：US06660587B2

    公开(公告)日：2003-12-09

    申请号：US10205987

    申请日：2002-07-26

    申请人： Jae-Young Ahn ,  Bong-Hyun Kim ,  Jae-Duk Lee ,  Man-Sug Kang

    发明人： Jae-Young Ahn ,  Bong-Hyun Kim ,  Jae-Duk Lee ,  Man-Sug Kang

    IPC分类号： H01L21336

    CPC分类号： H01L21/28247 ,  H01L21/28061 ,  H01L21/28176 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521

    摘要： A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/or a sidewall of the conductive layer pattern, with damage cured therein by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased.

    Methods of manufacturing a semiconductor device
    4.
    发明申请
    Methods of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US20070010068A1

    公开(公告)日：2007-01-11

    申请号：US11481928

    申请日：2006-07-07

    申请人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

    发明人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/32105 ,  H01L21/28273 ,  H01L29/42324

    摘要： Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode. The radical re-oxidation process may be performed by providing a nitrogen gas onto the semiconductor substrate while increasing a temperature of the semiconductor substrate to a first temperature to passivate a surface of the gate electrode under a nitrogen gas atmosphere, providing an oxygen gas onto the semiconductor substrate while increasing the temperature from a first temperature to a second temperature to perform a first oxidation process and/or performing a second oxidation process at the second temperature.

    摘要翻译： 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其它示例实施例涉及制造具有栅电极的半导体器件的方法。 在制造半导体器件的方法中，可以在半导体衬底上形成栅电极。 可以通过自由基再氧化工艺固化或修复半导体衬底和栅电极的侧壁的损伤，以在半导体衬底和栅电极上形成氧化物层。 可以通过在半导体衬底上提供氮气同时将半导体衬底的温度提高到第一温度以在氮气气氛下钝化栅电极的表面来进行自由基再氧化工艺，从而将氧气提供到 半导体衬底，同时将温度从第一温度升至第二温度，以进行第一氧化工艺和/或在第二温度下进行第二氧化工艺。

    Methods of manufacturing a semiconductor device
    8.
    发明授权
    Methods of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07592227B2

    公开(公告)日：2009-09-22

    申请号：US11481928

    申请日：2006-07-07

    申请人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

    发明人： Yong-Sun Lee ,  Jai-Dong Lee ,  Bong-Hyun Kim ,  Man-Sug Kang ,  Jung-Hwan Kim ,  Hyun-Jin Shin ,  Won-Seok Yoo ,  Seung-Mok Shin

    IPC分类号： H01L21/336

    CPC分类号： H01L21/32105 ,  H01L21/28273 ,  H01L29/42324

    摘要： Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode. The radical re-oxidation process may be performed by providing a nitrogen gas onto the semiconductor substrate while increasing a temperature of the semiconductor substrate to a first temperature to passivate a surface of the gate electrode under a nitrogen gas atmosphere, providing an oxygen gas onto the semiconductor substrate while increasing the temperature from a first temperature to a second temperature to perform a first oxidation process and/or performing a second oxidation process at the second temperature.

    摘要翻译： 本发明的示例性实施例涉及制造半导体器件的方法。 本发明的其它示例实施例涉及制造具有栅电极的半导体器件的方法。 在制造半导体器件的方法中，可以在半导体衬底上形成栅电极。 可以通过自由基再氧化工艺固化或修复半导体衬底和栅电极的侧壁的损伤，以在半导体衬底和栅电极上形成氧化物层。 可以通过在半导体衬底上提供氮气同时将半导体衬底的温度提高到第一温度以在氮气气氛下钝化栅电极的表面来进行自由基再氧化工艺，从而将氧气提供到 半导体衬底，同时将温度从第一温度升至第二温度，以进行第一氧化工艺和/或在第二温度下进行第二氧化工艺。

    Method of manufacturing a capacitor and method of manufacturing a semiconductor device using the same
    9.
    发明授权
    Method of manufacturing a capacitor and method of manufacturing a semiconductor device using the same 有权
    制造电容器的方法和使用其制造半导体器件的方法

    公开(公告)号：US07629218B2

    公开(公告)日：2009-12-08

    申请号：US11592177

    申请日：2006-11-03

    申请人： Woo-Sung Lee ,  Man-Sug Kang ,  Tae-Han Kim ,  Keum-Joo Lee

    发明人： Woo-Sung Lee ,  Man-Sug Kang ,  Tae-Han Kim ,  Keum-Joo Lee

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/91 ,  H01L27/10814 ,  H01L27/10852

    摘要： Example embodiments relate to a method of manufacturing a capacitor and a method of manufacturing a semiconductor device using the same. Other example embodiments relate to a method of manufacturing a capacitor having improved characteristics and a method of manufacturing a semiconductor device using the same. In a method of manufacturing a capacitor having improved characteristics, an insulation layer, including a pad therein, may be formed on a substrate. An etch stop layer may be formed on the insulation layer. A mold layer may be formed on the etch stop layer. The mold layer may be partially etched by a first etching process to form a first contact hole exposing the etch stop layer. The mold layer may be partially etched by a second etching process to form a second contact hole. The exposed etch stop layer may be etched by a third etching process to form a third contact hole exposing the pad. A native oxide layer on the exposed pad may be removed by a fourth etching process to form a capacitor contact hole. A conductive layer may be formed in the capacitor contact hole to form a capacitor.

    摘要翻译： 示例性实施例涉及制造电容器的方法和使用其制造半导体器件的方法。 其他示例性实施例涉及制造具有改进特性的电容器的方法以及使用其制造半导体器件的方法。 在制造具有改进特性的电容器的方法中，可以在衬底上形成包括衬垫的绝缘层。 可以在绝缘层上形成蚀刻停止层。 可以在蚀刻停止层上形成模具层。 可以通过第一蚀刻工艺部分蚀刻模具层，以形成露出蚀刻停止层的第一接触孔。 可以通过第二蚀刻工艺部分地蚀刻模具层以形成第二接触孔。 可以通过第三蚀刻工艺蚀刻暴露的蚀刻停止层，以形成露出焊盘的第三接触孔。 暴露焊盘上的自然氧化物层可以通过第四蚀刻工艺去除以形成电容器接触孔。 可以在电容器接触孔中形成导电层以形成电容器。