摘要:
An apparatus and a method for simultaneously testing or burning in all the integrated circuit chips on a product wafer. The apparatus comprises a glass ceramic carrier having test chips and means for connection to pads of a large number of chips on a product wafer. Voltage regulators on the test chips provide an interface between a power supply and power pads on the product chips, at least one voltage regulator for each product chip. The voltage regulators provide a specified Vdd voltage to the product chips, whereby the Vdd voltage is substantially independent of current drawn by the product chips. The voltage regulators or other electronic means limit current to any product chip if it has a short. The voltage regulator circuit may be gated and variable and it may have sensor lines extending to the product chip. The test chips can also provide test functions such as test patterns and registers for storing test results.
摘要:
A method and system for predicting gate reliability. The method comprises the steps of stressing a gate dielectric test site to obtain gate dielectric test site data and using the test site data to predict gate reliability. Preferably, the test structure and the product structure are integrated in such a manner that a test site occupies some of the product area and the product itself occupies the remainder of the product area. A preferred methodology, more specifically, is as follows: (1) Test structures at start both in parallel stress mode and in ring oscillator or “product” mode; (2) Analyze the breakdown data as per the present state of the art for each of the areas based on the parallel stress mode; (3) Combine the above breakdown distributions using the area scaling to improve the confidence bounds of the Weibull slope of the cumulative distribution function; (4) Test the ring oscillators in the product mode to determine how many of the stress fails are also product fails as defined by an operational degradation; (5) Subdivide the failures to determine the relationship between the first fail, and the second fail, and the nth fail; (6) Investigate which stress fail, if not the first stress fail, is more likely to cause a product fail as defined by operational degradation; and (7) Based on the subdivision in step 5 and the results in step 6, make projection based on that fail which is most likely to cause fail. The methodology as outlined above bridges between dielectric stress fails and product degradation both in the case of each stress fail causing a product degradation, as well as in the case where more than one stress fail occurs before any product degradation occurs. And this relationship can be quantified.
摘要:
Disclosed is an integrated circuit device, comprising: a first power rail for supplying power to first latch and a circuit during a first clock phase; a second power rail for supplying power to a second latch during a second clock phase; and the circuit coupled between an output of the first latch and an input of the second latch.
摘要:
A method and system for predicting gate reliability. The method comprises the steps of stressing a gate dielectric test site to obtain gate dielectric test site data and using the test site data to predict gate reliability. Preferably, the test structure and the product structure are integrated in such a manner that a test site occupies some of the product area and the product itself occupies the remainder of the product area. A preferred methodology, more specifically, is as follows: (1) Test structures at start both in parallel stress mode and in ring oscillator or “product” mode; (2) Analyze the breakdown data as per the present state of the art for each of the areas based on the parallel stress mode; (3) Combine the above breakdown distributions using the area scaling to improve the confidence bounds of the Weibull slope of the cumulative distribution function; (4) Test the ring oscillators in the product mode to determine how many of the stress fails are also product fails as defined by an operational degradation; (5) Subdivide the failures to determine the relationship between the first fail, and the second fail, and the nth fail; (6) Investigate which stress fail, if not the first stress fail, is more likely to cause a product fail as defined by operational degradation; and (7) Based on the subdivision in step 5 and the results in step 6, make projection based on that fail which is most likely to cause fail. The methodology as outlined above bridges between dielectric stress fails and product degradation both in the case of each stress fail causing a product degradation, as well as in the case where more than one stress fail occurs before any product degradation occurs. And this relationship can be quantified.
摘要:
Test equipment provides interrupt capability to automatic testing as a means of actively controlling temperature of the device under test. A processor coupled to memory is responsive to computer-executable instructions contained in the memory. A test socket is coupled to a device under test and coupled to the processor. The processor is configured to interrupt an application pattern running on the device under test. In response to interrupting the application pattern, the processor is configured to cause a control pattern to run on the device under test and then cause the application pattern to restart running from the point of interruption on the device under test.
摘要:
Test equipment provides interrupt capability to automatic testing as a means of actively controlling temperature of the device under test. A processor coupled to memory is responsive to computer-executable instructions contained in the memory. A test socket is coupled to a device under test and coupled to the processor. The processor is configured to interrupt an application pattern running on the device under test. In response to interrupting the application pattern, the processor is configured to cause a control pattern to run on the device under test and then cause the application pattern to restart running from the point of interruption on the device under test.
摘要:
A system for modifying the power up and diagnostic procedure of systems such that the system voltage is lowered to a predetermined voltage level that has been shown to detect delay faults. The system conducts the normal procedure of power up/diagnostic routines at the described VLV condition and then logs failures to this VLV condition. Upon completion of the VLV power up, the system is shut down normally and then subsequently powered up again at the normal voltage conditions. Discrepancies between the VLV power up/diagnostics are noted in the system log and communicated appropriately.
摘要:
A method and system are provided that minimize wafer or package level test time without adversely impacting yields in downstream manufacturing processes or degrading outgoing quality levels. The method provides optimization by determining, a priority, the most effective set of tests for a given lot or wafer. The invention implements a method using a processor-based system involving the integration of multiple sources of data that include: historical and realtime, product specific and lot specific, from wafer fabrication data (i.e., process measurements, defect inspections, and parametric testing), product qualification test results, physical failure analysis results and manufacturing functional test results. These various forms of data are used to determine an optimal set of tests to run using a test application sequence, on a given product to optimize test time with minimum risk to yield or product quality.