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57 条记录 (耗时 0.03 秒)

    Method of bonding together two bodies with silicon oxide and practically pure boron
    1.
    发明授权
    Method of bonding together two bodies with silicon oxide and practically pure boron 失效
    使用氧化硅和实践纯硼连接两个体的方法

    公开(公告)号：US5054683A

    公开(公告)日：1991-10-08

    申请号：US576328

    申请日：1990-08-29

    申请人： Jan Haisma ,  Gijsbertus Spierings ,  Joseph G. Van Lierop ,  Hendrik F. Van Den Berg

    发明人： Jan Haisma ,  Gijsbertus Spierings ,  Joseph G. Van Lierop ,  Hendrik F. Van Den Berg

    IPC分类号： C04B37/00 ,  C04B37/04 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L21/2007 ,  Y10S148/133 ,  Y10S228/903

    摘要： A method is set forth of bonding together two bodies (1, 2), according to which a first body (1) is provided with a flat surface (5) and the second body (2) is provided with a silicon oxide layer (4) with a flat surface (6), after which a connecting layer (7) containing boron is provided on at least one of the two flat surfaces. Subsequently, the two bodies (1, 2) are pressed together at elevated temperature, so that a borosilicate glass layer is formed. According to the invention, a layer of practically pure boron is used by way of connecting layer (7). Among the advantages of this is that the composition of the borosilicate glass layer is exclusively determined by the previously chosen layer thicknesses.

    摘要翻译： 提出了一种将两个主体（1,2）接合在一起的方法，根据该主体，第一主体（1）设置有平坦表面（5），并且第二主体（2）设置有氧化硅层（4） ），之后在两个平坦表面中的至少一个上提供含有硼的连接层（7）。 随后，将两个体（1,2）在升高的温度下压在一起，从而形成硼硅酸盐玻璃层。 根据本发明，通过连接层（7）使用实际上纯硼的层。 其优点之一是硼硅酸盐玻璃层的组成仅由先前选择的层厚决定。

    Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method
    3.
    发明授权
    Method of providing a patterned relief of cured photoresist on a flat substrate surface and device for carrying out such a method 失效
    在平坦基板表面上提供固化的光致抗蚀剂的图案化浮雕的方法和用于执行这种方法的装置

    公开(公告)号：US5425848A

    公开(公告)日：1995-06-20

    申请号：US214888

    申请日：1994-03-15

    申请人： Jan Haisma ,  Martinus Verheijen ,  Johannes T. Schrama

    发明人： Jan Haisma ,  Martinus Verheijen ,  Johannes T. Schrama

    IPC分类号： G02B5/20 ,  B29C35/08 ,  B29C35/10 ,  B29C39/14 ,  G03F7/20 ,  G09F3/02 ,  H01L21/027 ,  B44C1/22 ,  B29C37/00

    CPC分类号： B29C43/003 ,  B29C35/0888 ,  B29C35/10 ,  B29C39/148 ,  G03F7/2012 ,  B29C2035/0827 ,  B29C2043/025

    摘要： A description is given of a method and a device (1) for providing (replicating) a patterned resyntetic resin relief (37) on the surface (25) of a glass substrate (27). For this purpose, a UV-curable acrylate lacquer (33) is applied to the surface (25), after which a transparent mould (3) having a relief (13) is rolled-off over the surface (25). By means of a UV light source (17) and an elliptic mirror (21), the lacquer is cured at the location of the focal line (23), thereby forming said relief (37). The relief (13) of the mould (3) is replicated on the glass substrate (27). The method described enables a relief of small dimensions (10.times.10 .mu.m) to be seamlessly provided on a large fiat surface (1.times.1 m), without being hindered by large release forces.

    摘要翻译： 给出了在玻璃基板（27）的表面（25）上提供（复制）图案化再生树脂浮雕（37）的方法和装置（1）的描述。 为此，将UV可固化的丙烯酸酯漆（33）施加到表面（25）上，之后在表面（25）上滚动具有浮雕（13）的透明模具（3）。 通过UV光源（17）和椭圆镜（21），在焦线（23）的位置处固化漆，从而形成所述浮雕（37）。 模具（3）的浮雕（13）被复制在玻璃基板（27）上。 所描述的方法使得可以在大的平坦表面（1x1m）上无缝地提供小尺寸（10x10μm）的浮雕，而不受大的释放力的阻碍。

    Mixed crystals of doped rare earth gallium garnet
    4.
    发明授权
    Mixed crystals of doped rare earth gallium garnet 失效
    掺杂稀土镓石榴石的混晶

    公开(公告)号：US5302559A

    公开(公告)日：1994-04-12

    申请号：US896489

    申请日：1992-06-02

    申请人： Dieter Mateika ,  Erich Volkel ,  Jan Haisma

    发明人： Dieter Mateika ,  Erich Volkel ,  Jan Haisma

    IPC分类号： C30B15/00 ,  C04B35/60 ,  C04B35/00

    CPC分类号： C30B15/00 ,  C30B29/28

    摘要： A method of growing mixed crystals having at least two lattice sites each having a different number of adjacent oxygen ions from melts of oxidic multi-component systems, homogeneous mixed crystals being grown such that the cations intended to occupy the first lattice site having the highest number of adjacent oxygen ions and to occupy the second lattice site having the next lowest number of adjacent oxygen ions are chosen such that the ratio of the bond length of the cations in the first lattice site to the bond length of the cations in the second lattice site is in the range from 0.7 to 1.5.

    摘要翻译： 生长混合晶体的方法，其具有至少两个晶格点，每个具有不同数量的相邻氧离子与氧化多组分系统的熔融，生长均匀的混合晶体，使得预期占据具有最高数目的第一晶格位点的阳离子 的相邻氧离子并且占据具有次最低数量的相邻氧离子的第二晶格位点，使得第一晶格位点中的阳离子的键长与第二晶格位点中的阳离子的键长的比例 在0.7至1.5的范围内。

    Method of manufacturing a semiconductor device
    5.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5009689A

    公开(公告)日：1991-04-23

    申请号：US7153

    申请日：1987-01-27

    申请人： Jan Haisma ,  Cornelis L. Alting ,  Theodorus M. Michielsen

    发明人： Jan Haisma ,  Cornelis L. Alting ,  Theodorus M. Michielsen

    IPC分类号： H01L27/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/31

    CPC分类号： H01L21/268 ,  H01L21/2007

    摘要： In a method of manufacturing a semiconductor device, at least a support body (1) and a monocrystalline semiconductor body (2) are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), while at least the semiconductor body is provided at the optically smooth surface with an oxide layer (3). The two bodies (1 and 2) are brought into contact with each other in a dust-free atmosphere after their flat surfaces have been cleaned in order to obtain a mechanical connection. Before the bodies are brought into contact with each other, at least the oxide layer (3) on the semiconductor body (2) is subjected to a bonding-activating operation, while after a connection has been formed between the surfaces, radiation (5) of a laser is focused on the connection surface of the two bodies and material of at least the semiconductor body is molten locally near the connection surface by means of the laser radiation. After solidification, a locally fused connection has been established between the two bodies. The semiconductor body (2) is formed from a material admitting a sufficient oxygen diffusion.

    摘要翻译： 在制造半导体器件的方法中，至少一个支撑体（1）和单晶体半导体本体（2）设置有至少一个通过大量减少抛光（镜面抛光）获得的平坦的光学光滑表面，而在 至少半导体体在光学平滑表面上设置有氧化物层（3）。 为了获得机械连接，两个主体（1和2）在其平坦表面被清洁之后在无尘环境中彼此接触。 在物体彼此接触之前，至少在半导体主体（2）上的氧化物层（3）进行接合激活操作，而在表面之间形成连接之后，辐射（5） 激光的焦点集中在两个主体的连接表面上，并且至少半导体主体的材料通过激光辐射局部地熔融在连接表面附近。 凝固后，两个体之间建立了局部融合的连接。 半导体本体（2）由承受足够的氧扩散的材料形成。

    Method of manufacturing a semiconductor device using SEG and a transitory substrate
    9.
    发明授权
    Method of manufacturing a semiconductor device using SEG and a transitory substrate 失效
    制造使用SEG和短暂衬底的半导体器件的方法

    公开(公告)号：US4970175A

    公开(公告)日：1990-11-13

    申请号：US389650

    申请日：1989-08-04

    申请人： Jan Haisma ,  Johannes E. A. M. van den Meerakker ,  Josephus H. C. van Vegchel

    发明人： Jan Haisma ,  Johannes E. A. M. van den Meerakker ,  Josephus H. C. van Vegchel

    IPC分类号： H01L21/306 ,  H01L21/20 ,  H01L21/304 ,  H01L21/3063 ,  H01L21/3105 ,  H01L23/14

    CPC分类号： H01L21/3063 ,  H01L21/2007 ,  H01L21/304 ,  H01L21/3105 ,  H01L23/147 ,  H01L2924/0002 ,  Y10S148/026 ,  Y10S438/977

    摘要： A method of manufacturing a semiconductor device in which a silicon layer (8) is epitaxially grown on the surface of a doped monocrystalline semiconductor body (7), whereafter a connection is established between said semiconductor body (7) and a second semiconductor body (1) which is used as a supporting body, while at least one of the surfaces of the two bodies is firstly provided with an insulating layer (2,3) and a rigid connection is established between the bodies, whereafter the monocrystalline semiconductor body (7) is electrochemically etched away down to the epitaxially grown silicon layer (8), parts of the insulating layer (2,3) being removed prior to establishing the connection between the bodies (1,7), whereafter a layer of electrically conducting material (6) is deposited on the surface with a thickness which is larger than that of the insulating layer, whereafter a polishing treatment is performed at least down to the insulating layer.

    摘要翻译： 一种半导体器件的制造方法，其中在掺杂的单晶半导体本体（7）的表面上外延生长硅层（8），之后在所述半导体本体（7）和第二半导体本体（1）之间建立连接 ），而两个主体的至少一个表面首先设置有绝缘层（2,3），并且在主体之间建立刚性连接，之后单晶半导体本体（7） 电化学蚀刻掉到外延生长的硅层（8）上，绝缘层（2,3）的部分在建立主体（1,7）之间的连接之前被去除，之后是一层导电材料（6） ）沉积在表面上，其厚度大于绝缘层的厚度，然后至少向下至绝缘层进行抛光处理。