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    Method for CVD process control for enhancing device performance
    2.
    发明授权
    Method for CVD process control for enhancing device performance 有权
    CVD过程控制方法，用于提高设备性能

    公开(公告)号：US06342453B1

    公开(公告)日：2002-01-29

    申请号：US09454423

    申请日：1999-12-03

    申请人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

    发明人： Shahab Khandan ,  Christopher T. Fulmer ,  Lori D. Washington ,  Herman P. Diniz ,  Lance A. Scudder ,  Arkadii V. Samoilov

    IPC分类号： H01L2131

    CPC分类号： C23C16/45523 ,  C23C16/455 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/66242

    摘要： A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species according to a determined concentration profile of a film introduced on a substrate, and introducing a film on a substrate, the film comprising the species at a first concentration at a first point in the film and a second concentration different than the first concentration at a second point in the film. Also, a bipolar transistor including a collector layer of a first conductivity type, a base layer of a second conductivity type forming a first junction with the collector layer, and an emitter layer of the first conductivity type forming a second junction with the base layer. An electrode configured to direct carriers through the emitter layer to the base layer and into the collector layer is also included. In one embodiment, at least one of the first junction and the second junction is between different semiconductor materials to form at least one heterojunction. The heterojunction has a concentration profile of a semiconductor material such that an electric field changes in an opposite way to that of a mobility change.

    摘要翻译： 根据确定的包含引入到基底上的物质的膜的浓度分布来控制物种的引入的方法和系统。 在一个方面，该方法包括根据确定的引入到基底上的膜的浓度分布来控制物种的流速，以及在基底上引入膜，所述膜在第一点处以第一浓度 并且在膜的第二点处具有与第一浓度不同的第二浓度。 此外，包括第一导电类型的集电极层，形成与集电极层的第一结的第二导电类型的基极层以及与基极层形成第二结的第一导电类型的发射极层的双极晶体管。 还包括被配置为将载流子引导通过发射极层到基极层并进入集电极层的电极。 在一个实施例中，第一结和第二结中的至少一个位于不同的半导体材料之间以形成至少一个异质结。 异质结具有半导体材料的浓度分布，使得电场以与迁移率变化相反的方式改变。

    Tiled showerhead for a semiconductor chemical vapor deposition reactor
    5.
    发明授权
    Tiled showerhead for a semiconductor chemical vapor deposition reactor 有权
    用于半导体化学气相沉积反应器的瓷砖花洒

    公开(公告)号：US09175393B1

    公开(公告)日：2015-11-03

    申请号：US13222890

    申请日：2011-08-31

    申请人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

    发明人： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

    IPC分类号： C23C16/50 ,  H01L21/306 ,  C23F1/00 ,  C23C16/455 ,  C23C16/458

    CPC分类号： H01J37/32834 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67115 ,  H01L21/6776

    摘要： A showerhead for a semiconductor-processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

    摘要翻译： 一种用于由喷头瓦片阵列形成的半导体处理反应器的喷头。 每个喷头瓦具有多个处理气体孔口，其可以在瓦片的中心区域中，或者可以在整个瓦片上延伸。 每个喷头砖的尺寸可以被设计用于处理相应的基板，或者该阵列的尺寸可以用于处理基板。 排气区围绕工艺气体孔。 排气区域具有至少一个排气孔，并且可以包括排气槽，多个连接的排气槽或多个排气孔。 排气区域围绕阵列的喷头瓦片，或者排气区域的相应部分围绕每个喷头瓦片或一组喷头瓦片中的多个处理气体孔。 气幕孔可以在排气区域和淋浴喷头瓦片之一的邻近瓦片的中心区域的处理气体孔之间。

    Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
    7.
    发明授权
    Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE 失效
    使用MOCVD和HVPE在III-V族氮化物薄膜生长中的寄生颗粒抑制

    公开(公告)号：US07585769B2

    公开(公告)日：2009-09-08

    申请号：US11429022

    申请日：2006-05-05

    申请人： David Bour ,  Jacob W. Smith ,  Sandeep Nijhawan ,  Lori D. Washington ,  David Eaglesham

    发明人： David Bour ,  Jacob W. Smith ,  Sandeep Nijhawan ,  Lori D. Washington ,  David Eaglesham

    IPC分类号： H01L21/44

    CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4401 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

    摘要： A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and introducing an organometallic precursor, a particle suppression compound and at least a second precursor to the reaction chamber. The second precursor reacts with the organometallic precursor to form a nucleation layer on the substrate. Also, a method of suppressing parasitic particle formation during formation of a III-V nitride layer is described. The method includes introducing a group III metal containing precursor to a reaction chamber. The group III metal precursor may include a halogen. A hydrogen halide gas and a nitrogen containing gas are also introduced to the reaction chamber. The nitrogen containing gas reacts with the group III metal precursor to form the III-V nitride layer on the substrate.

    摘要翻译： 描述了抑制金属有机化学气相沉积工艺中的寄生颗粒形成的方法。 该方法可以包括向反应室提供底物，并将有机金属前体，颗粒抑制化合物和至少第二前体引入反应室。 第二前驱体与有机金属前驱体反应以在基底上形成成核层。 另外，描述了在形成III-V族氮化物层期间抑制寄生粒子形成的方法。 该方法包括将含III族金属的前体引入反应室。 III族金属前体可以包括卤素。 卤化氢气体和含氮气体也被引入反应室。 含氮气体与III族金属前体反应以在衬底上形成III-V族氮化物层。

    CVD APPARATUS
    9.
    发明申请
    CVD APPARATUS 审中-公开
    CVD装置

    公开(公告)号：US20090194024A1

    公开(公告)日：2009-08-06

    申请号：US12023520

    申请日：2008-01-31

    申请人： Brian H. Burrows ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

    发明人： Brian H. Burrows ,  Ronald Stevens ,  Jacob Grayson ,  Joshua J. Podesta ,  Sandeep Nijhawan ,  Lori D. Washington ,  Alexander Tam ,  Sumedh Acharya

    IPC分类号： C23C16/52 ,  C23C16/46

    CPC分类号： C23C16/452 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68771

    摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.

    摘要翻译： 本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积中的处理室和组件。 该装置包括限定处理量的室主体。 第一平面中的喷头定义了处理量的顶部。 载体板在第二平面中延伸过程体积，形成在喷头和基座板之间的上过程体积。 在第三平面中的透明材料限定了处理体积的底部，其在承载板和透明材料之间形成较低的处理体积。 多个灯形成位于透明材料下方的一个或多个区域。 该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量的增加。

    METHODS AND APPARATUS FOR DEPOSITING A GROUP III-V FILM USING A HYDRIDE VAPOR PHASE EPITAXY PROCESS
    10.
    发明申请
    METHODS AND APPARATUS FOR DEPOSITING A GROUP III-V FILM USING A HYDRIDE VAPOR PHASE EPITAXY PROCESS 审中-公开
    使用氢化物​​蒸气相外延过程沉积III-V族薄膜的方法和装置

    公开(公告)号：US20080289575A1

    公开(公告)日：2008-11-27

    申请号：US11753376

    申请日：2007-05-24

    申请人： Brian H. Burrows ,  Nyi O. Myo ,  Ronald Stevens ,  Jacob Grayson ,  Lori D. Washington ,  Sandeep Nijhawan

    发明人： Brian H. Burrows ,  Nyi O. Myo ,  Ronald Stevens ,  Jacob Grayson ,  Lori D. Washington ,  Sandeep Nijhawan

    IPC分类号： C23C16/08

    CPC分类号： C30B29/403 ,  C23C16/4488 ,  C23C16/4584 ,  C30B25/02 ,  C30B25/14

    摘要： An improved method and apparatus for depositing a Group III-V for a hydride vapor phase epitaxy (HVPE) process are provided. In one embodiment, an apparatus for a hydride vapor phase epitaxy process may include an elongated body having a trough defined between a first and a second wall, a channel formed in the first wall configured to provide a gas to the trough, and an inlet port formed in the body coupled to the channel. In another embodiment, a method for a hydride vapor phase epitaxy process may include providing Group III metal liquid precursor in a container disposed in a chamber, flowing a halogen containing gas across the container to form a Group III metal halide vapor to a reacting zone in the chamber, and mixing the Group III metal halide vapor with a Group V gas supplied in the chamber in the reacting zone.

    摘要翻译： 提供了用于沉积氢化物气相外延（HVPE）工艺的III-V族的改进方法和装置。 在一个实施例中，用于氢化物气相外延工艺的装置可以包括细长体，其具有限定在第一和第二壁之间的槽，在第一壁中形成的通道，其被配置成向槽提供气体，以及入口 形成在与身体相连的通道上。 在另一个实施方案中，氢化物气相外延法的方法可以包括在设置在室中的容器中提供III族金属液体前体，使含卤素气体流过容器以形成第III族金属卤化物蒸汽至反应区 并且将III族金属卤化物蒸气与在反应区中的室中供应的V族气体混合。