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公开(公告)号：US08617704B2
公开(公告)日：2013-12-31
申请号：US13273528
申请日：2011-10-14
CPC分类号： A61L27/306 , A61K6/02 , A61K6/0205 , A61L2400/18 , A61L2430/12 , Y10T156/10 , Y10T428/261 , Y10T428/265 , Y10T428/31667 , A61K6/0017 , C08L43/04
摘要： A coated medical implant, such as a coated dental component, is provided, the coated medical implant including a substrate surface formed of a material comprising available hydroxyl groups and a silicon oxide coating layer chemisorbed on the substrate surface. A method for the preparation of such coated implants is also provided, the method involving application of the silicon oxide coating layer to the substrate surface by chemical vapor deposition. A dental structure is also provided, which includes a first dental component having a substrate surface formed of a material comprising available hydroxyl groups; a silicon oxide coating layer chemisorbed on the substrate surface; a silane coupling agent overlying and covalently attached to the silicon oxide layer; a dental cement overlying and coupled to the silane coupling agent; and a second dental component having a surface bonded to the dental cement.
摘要翻译： 提供涂覆的医疗植入物，例如涂覆的牙科部件，涂覆的医疗植入物包括由包含可用羟基的材料形成的基底表面和在基底表面上化学吸附的氧化硅被覆层。 还提供了用于制备这种涂覆植入物的方法，该方法包括通过化学气相沉积将氧化硅涂层施加到基底表面。 还提供牙科结构，其包括具有由包含可用羟基的材料形成的基底表面的第一牙齿部件; 化学吸附在基材表面上的氧化硅涂层; 覆盖并共价连接到氧化硅层上的硅烷偶联剂; 覆盖并与硅烷偶联剂偶联的牙科水泥; 以及具有粘合到所述牙科粘固剂的表面的第二牙齿部件。
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公开(公告)号：US20120034572A1
公开(公告)日：2012-02-09
申请号：US13273528
申请日：2011-10-14
IPC分类号： A61C8/00 , A61C13/007 , A61C5/04 , A61C5/00 , B32B37/12 , A61C7/14 , C23C16/40 , B32B37/14 , C23C16/02 , A61C5/08 , A61C5/02
CPC分类号： A61L27/306 , A61K6/02 , A61K6/0205 , A61L2400/18 , A61L2430/12 , Y10T156/10 , Y10T428/261 , Y10T428/265 , Y10T428/31667 , A61K6/0017 , C08L43/04
摘要： A coated medical implant, such as a coated dental component, is provided, the coated medical implant including a substrate surface formed of a material comprising available hydroxyl groups and a silicon oxide coating layer chemisorbed on the substrate surface. A method for the preparation of such coated implants is also provided, the method involving application of the silicon oxide coating layer to the substrate surface by chemical vapor deposition. A dental structure is also provided, which includes a first dental component having a substrate surface formed of a material comprising available hydroxyl groups; a silicon oxide coating layer chemisorbed on the substrate surface; a silane coupling agent overlying and covalently attached to the silicon oxide layer; a dental cement overlying and coupled to the silane coupling agent; and a second dental component having a surface bonded to the dental cement.
摘要翻译： 提供涂覆的医疗植入物，例如涂覆的牙科部件，涂覆的医疗植入物包括由包含可用羟基的材料形成的基底表面和在基底表面上化学吸附的氧化硅被覆层。 还提供了一种用于制备这种涂覆植入物的方法，该方法包括通过化学气相沉积将氧化硅涂层施加到基底表面。 还提供牙科结构，其包括具有由包含可用羟基的材料形成的基底表面的第一牙齿部件; 化学吸附在基材表面上的氧化硅涂层; 覆盖并共价连接到氧化硅层上的硅烷偶联剂; 覆盖并与硅烷偶联剂偶联的牙科水泥; 以及具有粘合到所述牙科粘固剂的表面的第二牙齿部件。
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公开(公告)号：US20130209951A1
公开(公告)日：2013-08-15
申请号：US13880277
申请日：2011-10-20
IPC分类号： A61C7/00 , A61K6/08 , A61C8/00 , A61K6/02 , A61C5/04 , A61C5/02 , A61C7/14 , A61K6/04 , A61C5/08
CPC分类号： A61C8/0015 , A61C5/30 , A61C5/40 , A61C5/50 , A61C5/70 , A61C5/77 , A61C7/00 , A61C7/14 , A61C8/00 , A61C13/0006 , A61C13/225 , A61K6/0029 , A61K6/0205 , A61K6/0225 , A61K6/0235 , A61K6/024 , A61K6/04 , A61K6/0687 , A61K6/08 , A61L27/06 , A61L27/10 , A61L27/105 , A61L27/14 , A61L27/50 , A61L2400/18 , A61L2430/12 , B05D3/0433 , B05D3/104 , B05D3/141 , C08L83/16
摘要： A fluoride treated medical implant, such as a dental component, is provided, the medical implant comprising fluorinated metal oxide on the substrate surface. A method for the preparation of such treated implants is also provided, the method involving exposure of the medical implant to a fluorine-containing reagent. A dental structure is also provided, which includes a first dental component comprising a fluorinated metal oxide layer on its surface, a silane coupling agent, a dental cement, and a second dental component having a surface bonded to the dental cement. An additional dental structure, which includes a first dental component comprising a fluorinated metal oxide layer on its surface, a dental cement, and a second dental component having a surface bonded to the dental cement is also provided.
摘要翻译： 提供氟化物处理的医疗植入物，例如牙科部件，医疗植入物在基底表面上包括氟化金属氧化物。 还提供了用于制备这种处理的植入物的方法，该方法涉及将医用植入物暴露于含氟试剂。 还提供了一种牙科结构，其包括其表面上包含氟化金属氧化物层的第一牙科成分，硅烷偶联剂，牙科粘合剂和具有粘合到牙科粘固剂的表面的第二牙齿部件。 还提供另外的牙科结构，其包括在其表面上包含氟化金属氧化物层的第一牙科部件，牙科牙科粘合剂和具有粘合到牙科粘固剂的表面的第二牙科部件。
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4.发明授权Fabrication of a high surface area boron-doped diamond coated metal mesh for electrochemical applications 失效制造用于电化学应用的高表面积硼掺杂金刚石涂层金属网公开(公告)号：US06267866B1
公开(公告)日：2001-07-31
申请号：US09418355
申请日：1999-10-14
申请人： John W. Glesener , Paul M. Natishan , William E. O'Grady , Arthur A. Morrish , Brian R. Stoner , Patrick L. Hagans
发明人： John W. Glesener , Paul M. Natishan , William E. O'Grady , Arthur A. Morrish , Brian R. Stoner , Patrick L. Hagans
IPC分类号： C25B300
CPC分类号： G01N27/308 , C02F1/46109 , C02F1/4672 , C02F1/4676 , C02F2001/46138 , C02F2001/46157 , C02F2101/30 , C02F2101/36 , C02F2305/023 , C25B11/0478
摘要： An electrode for electrochemical uses is made of a conductive metal mesh coated with boron-doped diamond. The electrode may be used in electrochemical reactions either as a cathode or as an anode, or can be used with an alternating current.
摘要翻译： 用于电化学用途的电极由涂覆有硼掺杂金刚石的导电金属网制成。 电极可以用作电化学反应，作为阴极或阳极，或者可以与交流电一起使用。
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公开(公告)号：US5672240A
公开(公告)日：1997-09-30
申请号：US658467
申请日：1996-06-05
申请人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
发明人： Brian R. Stoner , Joseph S. Holmes, Jr. , David L. Dreifus , Scott R. Sahaida , Roy E. Fauber , Michelle L. Hartsell , Dean Malta
CPC分类号： H01L21/2007 , H03H3/08 , H03H9/02582
摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.
摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。
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6.发明授权Microelectronic structure having an array of diamond structures on a nondiamond substrate and associated fabrication methods 失效微电子结构在非金刚石衬底上具有金刚石结构阵列，并且具有相关的制造方法
公开(公告)号：US5420443A
公开(公告)日：1995-05-30
申请号：US35643
申请日：1993-03-23
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C23C16/458 , C23C16/50 , C23C16/511 , C30B25/10 , H01L21/205 , H01L21/338
CPC分类号： C23C16/274 , C23C16/02 , C23C16/4581 , C30B25/105
摘要： A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting diamond layer on each of the diamond structures. The diamond structures are preferably oriented relative to a single crystal nondiamond substrate so that the diamond structures have a (100)-oriented outer face for forming the semiconductor devices thereon. The microelectronic structure may be diced into discrete devices, or the devices interconnected, such as to form a higher powered device. One embodiment of the microelectronic structure includes the plurality of diamond structures, wherein each diamond structure is formed of a highly oriented textured diamond layer approaching single crystal quality, yet capable of fabrication on a single crystal nondiamond substrate. A method for fabricating the nondiamond highly oriented textured diamond layer includes carburizing a face of the nondiamond substrate, nucleating the carburized face by electrical bias enhanced nucleation, and selectively growing diamond favoring growth of the (100)-oriented grains.
摘要翻译： 一种微电子结构，包括多个间隔开的金刚石结构，其上可以形成多个半导体器件。 半导体器件包括在每个金刚石结构上的半导体金刚石层。 金刚石结构优选相对于单晶非金刚石基底定向，使得金刚石结构具有用于在其上形成半导体器件的（100）取向的外表面。 微电子结构可以被切割成分立的设备，或者互连的设备，以形成更高功率的设备。 微电子结构的一个实施例包括多个金刚石结构，其中每个金刚石结构由接近单晶质量的高取向纹理金刚石层形成，但能够在单晶非金刚石基底上制造。 用于制造非金刚石高取向纹理金刚石层的方法包括使非金刚石基底的表面渗碳，通过电偏压增强的成核使渗碳表面成核，以及选择性地生长有利于（100）取向晶粒生长的金刚石。
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公开(公告)号：US5397428A
公开(公告)日：1995-03-14
申请号：US937481
申请日：1992-08-28
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C23C16/458 , C23C16/50 , C23C16/511 , C30B25/10 , C30B29/00
CPC分类号： C23C16/274 , C23C16/02 , C23C16/4581 , C30B25/105
摘要： A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate. The laser reflection interferometer is used to monitor growth of the diamond film and cooperates with a controller to control the processing parameters during the diamond growing process.
摘要翻译： 一种用于通过在将衬底和由此偏置的金刚石膜暴露于含碳等离子体的同时电气偏置邻近衬底的金刚石膜来预处理衬底来增强金刚石成核的方法和装置。 偏置预处理可以在约1小时至2小时的范围内保持一段时间，以获得高的金刚石成核密度。 或者，可以继续施加偏压，直到金刚石膜形成由衬底的表面的反射率的变化来表示。 偏置预处理可用于使具有异质外延的金刚石成核，该基体具有由具有与金刚石相似的晶格匹配的材料形成的表面膜，例如β-碳化硅。 该装置包括用于监测基板表面的激光反射干涉仪。 激光反射干涉仪用于监测金刚石膜的生长，并与控制器配合以控制金刚石生长过程中的加工参数。
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公开(公告)号：US20110048711A1
公开(公告)日：2011-03-03
申请号：US12547281
申请日：2009-08-25
IPC分类号： E21B33/13
摘要： The present disclosure is directed to a system and method for sonically activating cement slurries. In some implementations, a method of treating a subterranean formation includes positioning a settable composition including a capsule in a wellbore. The capsule is used to increase a setting rate in response to at least sonic signals. A sonic signal is transmitted to at least a portion of the settable composition to release an activator from the capsule.
摘要翻译： 本公开涉及一种用于声波活化水泥浆的系统和方法。 在一些实施方案中，处理地下地层的方法包括将包含胶囊的可固化组合物定位在井眼中。 胶囊用于响应于至少声音信号而增加设定速率。 声音信号被传送到可凝固组合物的至少一部分以从胶囊释放活化剂。
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公开(公告)号：US5523160A
公开(公告)日：1996-06-04
申请号：US466922
申请日：1995-06-06
CPC分类号： H01L29/1602 , H01L21/02381 , H01L21/02527 , H01L21/02573 , H01L21/02595 , H01L21/02609 , H01L21/0262 , H01L29/045 , Y10T428/24744 , Y10T428/30
摘要： The highly-oriented diamond film is a diamond film formed by chemical vapor deposition, with at least 95% of its area consisting of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} between the adjacent crystals satisfying (.vertline..DELTA..alpha..vertline..ltoreq.1.degree., .vertline..DELTA..beta..vertline..ltoreq.1.degree. and .vertline..DELTA..gamma..vertline..ltoreq.1.degree.) simultaneously. Thus obtained highly-oriented diamond film has few grain boundaries and high carrier mobility. And the area of the diamond film can be large.
摘要翻译： 高度取向的金刚石膜是通过化学气相沉积形成的金刚石膜，其面积的至少95％由（100）或（111）晶面组成，并且差异{DELTAα，DELTAβ，DELTAγ} 的相邻晶体之间的欧拉角{α，β，γ}同时满足（| DELTAα|
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公开(公告)号：US5491348A
公开(公告)日：1996-02-13
申请号：US313986
申请日：1994-09-28
IPC分类号： H01L21/314 , H01L21/338 , H01L29/04 , H01L29/16 , H01L29/812
CPC分类号： H01L29/1602 , H01L29/045 , H01L29/812
摘要： A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.
摘要翻译： 在第一半导体金刚石膜上形成源电极，在第二半导体金刚石膜上形成漏电极。 在第一和第二半导体金刚石膜之间放置厚度在10埃至1毫米至10欧姆或更大的电阻之间的高度耐磨的金刚石薄膜。 在耐高压金刚石膜上形成栅电极。 因此，通过这些第一和第二半导体金刚石膜以及高度耐磨的金刚石膜形成沟道区。 所述第一和第二半导体金刚石膜的全部或至少一部分和高度耐金刚石膜由高取向金刚石膜制成，金刚石的（100）或（111）晶面覆盖至少80％的膜表面 ，并且表示晶面取向的欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}满足| DELTAα| <10°，| DELTA beta | <10°，| DELTA gamma | <10°，同时在相邻的晶面之间。
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