摘要:
Methods and apparatus to compensate for low-frequency tracking errors in motion control of a movable stage are provided. By recording tracking errors during earlier traversal of a trajectory, filtering, and applying those recorded tracking errors to subsequent traversals of the same or a similar trajectory, tracking errors of the subsequent traversals may be significantly reduced.
摘要:
A beam re-registration system and method for error correction of a particle or other beam are disclosed. The beam re-registration system and method may include a particle or other beam, a stage movable in relation to the particle beam, at least two servos for controlling movement of the stage, a fixed target or grid located on the stage, and a re-registration controller adapted to control the servos. The re-registration controller may attenuate high frequency signals and amplify low frequency signals, and may be a type 2 controller which accurately corrects a ramp disturbance.
摘要:
A beam re-registration system and method for error correction of a particle or other beam are disclosed. The beam re-registration system and method may include a particle or other beam, a stage movable in relation to the particle beam, at least two servos for controlling movement of the stage, a fixed target or grid located on the stage, and a reregistration controller adapted to control the servos. The reregistration controller may attenuate high frequency signals and amplify low frequency signals, and may be a type 2 controller which accurately corrects a ramp disturbance.
摘要:
An apparatus and method for deflecting electron beams with high precision and high throughput. At least one electrode of a deflecting capacitor is connected to a signal source via a coaxial cable. A termination resistor is further connected to the coaxial cable and the electrode at the joint of the coaxial cable and the electrode. The termination resistor has a resistance matched to the impedance of the coaxial cable and the electrode has an impedance matched to half of the impedance of the coaxial. The deflecting capacitors of the present invention have a minimized loss of precision due to eddy current. The spacing of electrodes in the deflecting capacitors is reduced by a factor of approximately two compared to the state-the-art system.
摘要:
An apparatus and method for deflecting electron beams with high precision and high throughput. At least one electrode of a deflecting capacitor is connected to a signal source via a coaxial cable. A termination resistor is further connected to the coaxial cable and the electrode at the joint of the coaxial cable and the electrode. The termination resistor has a resistance matched to the impedance of the coaxial cable and the electrode has an impedance matched to half of the impedance of the coaxial. The deflecting capacitors of the present invention have a minimized loss of precision due to eddy current. The spacing of electrodes in the deflecting capacitors is reduced by a factor of approximately two compared to the state-the-art system.
摘要:
A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.
摘要:
An apparatus and method for reducing the voltage in a photovoltaic system to allow servicing of solar modules. The apparatus includes a switch that electrically shorts conductors of the system, thereby reducing high voltage conditions at the modules. The apparatus and method can also include use of a detector that measures voltage and/or current in the system to control switch operations.
摘要:
Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.