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公开(公告)号：US4745204A
公开(公告)日：1988-05-17
申请号：US871046
申请日：1986-06-05
IPC分类号： C07B41/02 , C07B31/00 , C07C27/00 , C07C29/70 , C07C31/32 , C07C37/66 , C07C39/235 , C07C67/00 , C07F5/06
摘要： Aluminum alkoxide or aluminum aryloxide is produced by dissolving aluminum in gallium and/or gallium-based alloy wherein the gallium and/or gallium-based alloy is in a liquid form. The aluminum is then reacted with an organic compound having at least one reactive hydroxyl group to thereby obtain the aluminum alkoxide or aluminum aryloxide.
摘要翻译： 通过将铝溶解在其中镓和/或镓基合金为液体形式的镓和/或镓基合金中来制备烷氧基铝或铝氧化铝。 然后使铝与具有至少一个反应性羟基的有机化合物反应，从而得到烷氧基铝或芳氧化铝。
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公开(公告)号：US4416725A
公开(公告)日：1983-11-22
申请号：US454922
申请日：1982-12-30
申请人： Jerome J. Cuomo , Pamela A. Leary , Dennis S. Yee
发明人： Jerome J. Cuomo , Pamela A. Leary , Dennis S. Yee
CPC分类号： H05K3/382 , C23F4/00 , H05K2203/095
摘要： The invention is a room-temperature dry process for texturing copper on polyester, to improve adhesion of coatings to the copper surface through mechanical as well as chemical bonding. An iodine plasma is produced by backfilling an evacuated chamber with iodine and applying an RF potential. The iodine plasma includes both positive and negative iodine ions. Unprotected surface areas of the copper form a copper iodide; when the copper iodide is removed, the remaining surface is highly textured. The associated polyester is not damaged. The copper iodide is conveniently removed by a 10% hydrochloric acid solution which has no damaging effects on the associated polyester or on the metallic copper, or on associated polyester in a plastic laminated with copper.
摘要翻译： 本发明是用于在聚酯上织造铜的室温干燥方法，以通过机械和化学键合来改善涂层对铜表面的附着力。 通过用碘回填真空室并施加RF电位来产生碘等离子体。 碘等离子体包括正和负碘离子。 不受保护的铜表面积形成碘化铜; 当除去碘化铜时，剩余的表面是高度纹理的。 相关聚酯不损坏。 通过10％盐酸溶液方便地除去碘化铜，对相关的聚酯或金属铜或与铜层压的塑料中的相关聚酯没有损伤作用。
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公开(公告)号：US4448487A
公开(公告)日：1984-05-15
申请号：US43398
申请日：1979-05-29
CPC分类号： F24J2/487 , Y02E10/40 , Y10S126/908
摘要： Photon energy can be efficiently absorbed by a material having a reflectivity control surface region wherein the index of refraction, the thickness, and the contour of the external surface of the reflecting control surface region operate to curtail all reradiation components.
摘要翻译： 可以通过具有反射控制表面区域的材料有效地吸收光子能量，其中反射控制表面区域的外表面的折射率，厚度和轮廓操作以限制所有再辐射分量。
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公开(公告)号：US4358291A
公开(公告)日：1982-11-09
申请号：US221650
申请日：1980-12-31
申请人： Jerome J. Cuomo , Jerry M. Woodall
发明人： Jerome J. Cuomo , Jerry M. Woodall
CPC分类号： C01B3/08 , Y02E60/36 , Y02P20/133 , Y02P20/134
摘要： A solid state renewable energy supply is provided by the oxidation of a passivating oxide forming solid state material in the presence of oxygen under the control of a passivating oxide preventing agent forming thereby an oxide reaction product, heat and hydrogen. The oxide reaction product is then electrolytically or thermo chemically reduced to recover the solid state material. Aluminum is hydrolized in the presence of gallium producing aluminum oxide, heat and hydrogen. The aluminum oxide is in turn electrolyzed back to aluminum.
摘要翻译： 固态可再生能源通过氧化形成固态材料的钝化氧化物在氧的存在下在钝化氧化物防止剂形成的控制下由氧化反应产物，热和氢提供。 然后将氧化物反应产物电解或热化学还原以回收固态材料。 铝在产生镓的氧化铝，热和氢的存在下水解。 氧化铝又被电解回到铝。
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公开(公告)号：US4352117A
公开(公告)日：1982-09-28
申请号：US155729
申请日：1980-06-02
CPC分类号： H01J1/308
摘要： A high brightness, essentially monoenergetic electron source is constructed in solid state material by providing a semiconductor body with an electron confinement barrier over most of the surface, the barrier having a relatively small opening exposing the semiconductor body, in the relatively small opening a material is placed in contact with the semiconductor body that has a work function that is lower than the energy of excited electrons in the semiconductor. In this structure electrons from hole-electron pairs generated in the semiconductor are repelled and recombination is inhibited by the barrier except in the relatively small opening where they are injected into the surrounding environment through the lower work function material. The hole-electron pair generation may be by irradiation or by electrical injection. The electron source is useful for such applications as high brightness sources, digital communications, cathode ray tube electron sources and scanning electron microscopes.
摘要翻译： 通过在绝大多数表面上提供具有电子约束势垒的半导体器件，在固态材料中构造高亮度，基本上单能量的电子源，该阻挡层具有暴露半导体本体的相对较小的开口， 与具有比半导体中激发的电子的能量低的功函数的半导体本体接触。 在这种结构中，在半导体中产生的空穴 - 电子对的电子被排斥，复合被屏障抑制，除了在相对小的开口中，它们通过较低的功函数材料注入到周围环境中。 可以通过照射或电喷射来产生空穴 - 电子对。 电子源可用于高亮度源，数字通信，阴极射线管电子源和扫描电子显微镜等应用。
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公开(公告)号：US06582823B1
公开(公告)日：2003-06-24
申请号：US09304422
申请日：1999-04-30
IPC分类号： B32B2736
CPC分类号： C23C16/30 , G02B1/105 , G02B1/14 , G02B1/18 , Y02T50/67 , Y10T428/31507 , Y10T428/31536 , Y10T428/31612 , Y10T428/31663 , Y10T428/31667
摘要： A substantially optically transparent article such as a lens having a wear-resistant surface comprises a substantially optically transparent polymeric substrate (e.g., a polycarbonate or polymethyl methacrylate substrate), and having a surface portion. A hard antiabrasive interconnecting layer is formed on the surface portion (typically by vacuum deposition and preferably by plasma-enhanced chemical vapor deposition), and a lubricious hydrophobic coating layer is bonded to the interconnecting layer. The lubricious hydrophobic coating layer, together with the hard antiabrasive interconnecting layer, form a wear-resistant surface on the substrate. The lubricious coating layer is formed from a hydrophobic organic lubricant such as a perfluoropolyether, a fatty acid, or a fatty acid esters. Methods of making such articles are also disclosed.
摘要翻译： 基本上光学透明的制品，例如具有耐磨表面的透镜，包括基本上光学透明的聚合物基材（例如，聚碳酸酯或聚甲基丙烯酸甲酯基材），并具有表面部分。 在表面部分（通常通过真空沉积，优选通过等离子体增强化学气相沉积）形成硬的耐磨互连层，并且将润滑的疏水涂层粘合到互连层。 润滑的疏水涂层与硬质耐磨互连层一起在基材上形成耐磨表面。 润滑涂层由疏水性有机润滑剂如全氟聚醚，脂肪酸或脂肪酸酯形成。 还公开了制造这种制品的方法。
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公开(公告)号：US5585673A
公开(公告)日：1996-12-17
申请号：US346208
申请日：1994-11-22
IPC分类号： H01L21/28 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/498 , H01L23/522 , H01L23/532 , H01L29/43
CPC分类号： H01L21/76843 , H01L21/76838 , H01L21/7684 , H01L21/76847 , H01L21/76849 , H01L21/76852 , H01L21/76877 , H01L23/49866 , H01L23/53223 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , Y10S148/015 , Y10S257/915 , Y10S438/959
摘要： Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.
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公开(公告)号：US5241040A
公开(公告)日：1993-08-31
申请号：US551716
申请日：1990-07-11
申请人： Jerome J. Cuomo , Jeffrey D. Gelorme , Michael Hatzakis, Jr. , David A. Lewis , Jane M. Shaw , Stanley J. Whitehair
发明人： Jerome J. Cuomo , Jeffrey D. Gelorme , Michael Hatzakis, Jr. , David A. Lewis , Jane M. Shaw , Stanley J. Whitehair
CPC分类号： H05B6/705 , B01J19/126 , C08G73/1025 , G01N22/00 , H05B6/68 , B01J2219/00191 , B01J2219/1215 , H05K1/0346 , H05K3/4644 , Y02B40/143 , Y10T428/31681 , Y10T428/31721
摘要： A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance.The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material.In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction. Processing time has been reduced thirty fold as compared to conventional thermal methods.
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9.发明授权Hollow cathode enhanced plasma for high rate reactive ion etching and deposition 失效用于高速反应离子蚀刻和沉积的空心阴极增强等离子体
公开(公告)号：US4637853A
公开(公告)日：1987-01-20
申请号：US759762
申请日：1985-07-29
IPC分类号： H05K3/08 , C23C14/34 , C23F1/04 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01J37/32082 , C23C14/34 , H01J37/32541 , H01J37/32596 , H01J2237/3341
摘要： A metallic hollow cathode electrode structure for use in a RF-RIE sputter/etch system. The electrode defines a critical aspect ratio hollow cathode volume. In accordance with one embodiment of the invention, the electrode structure may consist of two closely spaced metal elements separated by a distance of a few centimeters. The elements are electrically and structurally connected by supports around their outer rim. An RF voltage is applied between the improved hollow cathode electrode structure and an evacuated chamber containing same through a suitable matching network. A plasma gas is supplied to the system from a point outside the electrodes and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. Samples to be sputtered are then placed on either of the inside electrode surfaces for sputter/etching. The aspect ratio (longest dimension of one of the elements/spacing between the elements) should be at least 4.According to a further embodiment, the hollow cathode electrode structure is characterized by a single plate having a plurality of cylindrical chambers or holes therein, each hole producing a hollow cathode glow when the system is energized. The aspect ratio (largest dimension of the chamber cross-section/depth of the chamber) for this embodiment should be at least 1.5.
摘要翻译： 用于RF-RIE溅射/蚀刻系统的金属中空阴极电极结构。 电极定义了关键的纵横比空心阴极体积。 根据本发明的一个实施例，电极结构可以由两厘米间隔开的两个紧密间隔的金属元件组成。 元件通过支撑件在其外缘周围电连接和结构连接。 在改进的中空阴极电极结构和通过合适的匹配网络包含它的真空室之间施加RF电压。 从电极外部的点向系统供应等离子体气体，并且使用合适的泵送系统来将操作压力保持在0.1至400毫托范围内。 然后将溅射的样品放置在内部电极表面中用于溅射/蚀刻。 长宽比（元件之一的最长尺寸/元件之间的间隔）应至少为4.根据另一实施例，中空阴极电极结构的特征在于具有多个圆柱形腔室或孔中的单个板， 当系统通电时，每个孔产生空心阴极辉光。 该实施例的纵横比（室的横截面的最大尺寸/室的深度）应至少为1.5。
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公开(公告)号：US4588490A
公开(公告)日：1986-05-13
申请号：US736918
申请日：1985-05-22
CPC分类号： H01J37/3405
摘要： A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc-source combined with a conventional plasma sputter etching/deposition system such as a magnetron. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic field and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.
摘要翻译： 等离子体溅射蚀刻/沉积系统，其包括与常规等离子体溅射蚀刻/沉积系统如磁控管组合的电子发射空心阴极电弧源。 所发射的电子被耦合到固有的高能量例如磁场中，并被等离子体电势加速并且引起显着增加的等离子体密度。 所得到的组合允许比以前的装置更大的溅射/沉积效率。 根据本发明的另一方面，切换操作是可能的，由此蚀刻可以从各向同性到各向异性。 还描述了用于增强某些溅射/沉积工艺的侧面放电中空阴极结构，其中电子可以从中空阴极室侧面的一个或多个开口发射，以在大的处理室中实现更均匀的电子发射。
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