公开(公告)号：US20120249718A1

公开(公告)日：2012-10-04

申请号：US13439147

申请日：2012-04-04

申请人： Jin-seung Sohn ,  Sang-hun Lee ,  In-kyeong Yoo ,  Eun-hyoung Cho

发明人： Jin-seung Sohn ,  Sang-hun Lee ,  In-kyeong Yoo ,  Eun-hyoung Cho

IPC分类号： B41J2/435 ,  B05D5/06 ,  G02B1/10 ,  G02B5/09 ,  G02B27/14

CPC分类号： G02B1/005 ,  G02B5/1809 ,  G02B5/1861 ,  G02B27/102 ,  G02B27/1086

摘要： A color printing paper includes a substrate having a printing region and a plurality of photonic crystal patterns formed on the printing region. The plurality of photonic crystal layer patterns have different respective optical reflection characteristics. The printing method includes selecting pixels including a plurality of photonic crystal layer patterns that express at least one of a red color, a green color, and a blue color, and changing optical reflection characteristics of at least a portion of the plurality of photonic crystal layer patterns of the selected pixels.

摘要翻译： 彩色打印纸包括具有打印区域和形成在打印区域上的多个光子晶体图案的基板。 多个光子晶体层图案具有不同的相应的光学反射特性。 打印方法包括选择包括表示红色，绿色和蓝色中的至少一种的多个光子晶体层图案的像素，以及改变多个光子晶体层的至少一部分的光学反射特性 所选像素的图案。

公开(公告)号：US08164130B2

公开(公告)日：2012-04-24

申请号：US10852287

申请日：2004-05-25

申请人： Sun-ae Seo ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Wan-jun Park

发明人： Sun-ae Seo ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Wan-jun Park

IPC分类号： G11C11/34

CPC分类号： G11C13/0007 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

公开(公告)号：US08043926B2

公开(公告)日：2011-10-25

申请号：US12926042

申请日：2010-10-22

申请人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

发明人： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

IPC分类号： H01L21/02

CPC分类号： H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

公开(公告)号：US07901586B2

公开(公告)日：2011-03-08

申请号：US11882112

申请日：2007-07-30

申请人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

发明人： In-kyeong Yoo ,  Soo-hwan Jeong ,  Sun-ae Seo ,  In-sook Kim

IPC分类号： B44C1/22 ,  H01L21/302

CPC分类号： B82B3/00 ,  B29C59/022 ,  B29C59/026 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/32139

摘要： A method of manufacturing a nanochannel-array and a method of fabricating a nanodot using the nanochannel-array are provided. The nanochannel-array manufacturing method includes: performing first anodizing to form a first alumina layer having a channel array formed by a plurality of cavities on an aluminum substrate; etching the first alumina layer to a predetermined depth and forming a plurality of concave portions on the aluminum substrate, wherein each concave portion corresponds to the bottom of each channel of the first alumina layer; and performing second anodizing to form a second alumina layer having an array of a plurality of channels corresponding to the plurality of concave portions on the aluminum substrate. The array manufacturing method makes it possible to obtain finely ordered cavities and form nanoscale dots using the cavities.

摘要翻译： 提供一种制造纳米通道阵列的方法和使用纳米通道阵列制造纳米点的方法。 纳米通道阵列制造方法包括：执行第一阳极氧化以形成具有由铝基板上的多个空腔形成的沟道阵列的第一氧化铝层; 将第一氧化铝层蚀刻到预定深度并在铝基板上形成多个凹部，其中每个凹部对应于第一氧化铝层的每个通道的底部; 以及进行第二阳极氧化以形成具有与所述铝基板上的所述多个凹部对应的多个通道的阵列的第二氧化铝层。 阵列制造方法使得可以使用空腔获得精细排列的空腔并形成纳米级点。

公开(公告)号：US20090045450A1

公开(公告)日：2009-02-19

申请号：US11976250

申请日：2007-10-23

申请人： June-mo Koo ,  Suk-pil Kim ,  Young-gu Jin ,  Won-joo Kim ,  In-kyeong Yoo ,  Yoon-dong Park

发明人： June-mo Koo ,  Suk-pil Kim ,  Young-gu Jin ,  Won-joo Kim ,  In-kyeong Yoo ,  Yoon-dong Park

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L29/66825 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7881

摘要： Provided are a non-volatile memory device, which may have higher integration density, improved or optimal structure, and/or reduce or minimize interference between adjacent cells without using an SOI substrate, and a method of fabricating the non-volatile memory device. The non-volatile memory device may include: a semiconductor substrate comprising a body, and a pair of fins protruding from the body; a buried insulating layer filling between the pair of fins; a pair of floating gate electrodes on outer surfaces of the pair of fins to a height greater than that of the pair of fins; and a control gate electrode on the pair of floating gate electrodes.

摘要翻译： 提供了一种非易失性存储器件，其可以具有更高的集成密度，改进的或最优的结构，和/或减少或最小化相邻单元之间的干扰而不使用SOI衬底，以及制造非易失性存储器件的方法。 非易失性存储器件可以包括：半导体衬底，其包括主体和从主体突出的一对鳍; 埋在绝缘层之间的一对散热片; 一对浮栅电极，其在所述一对翅片的外表面上的高度大于所述一对鳍片的高度; 以及一对浮栅上的控制栅电极。

公开(公告)号：US07355951B2

公开(公告)日：2008-04-08

申请号：US10252085

申请日：2002-09-23

申请人： In-kyeong Yoo ,  Won-bong Choi ,  Hyun-jung Shin

发明人： In-kyeong Yoo ,  Won-bong Choi ,  Hyun-jung Shin

IPC分类号： G11B9/00

CPC分类号： G11B9/10 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1463 ,  G11B11/115

摘要： A rapid data recording/reproducing method, a data recording system adopting the same, media for the system, and a tracking method, wherein the recording/reproducing method includes preparing media having a data recording layer in which a phase change is generated through electron absorption, generating electrons using an electron generating source at a position separated from the data recording layer by a predetermined interval, forming a magnetic field on the path of the electrons and cyclotron moving the electrons, recording data through local melting and cooling due to absorption of the electrons by the data recording layer. A micro-tip does not contact the data recording layer during electron collisions therewith, hence no damage is caused by or to the micro-tip. The present invention allows the region where the electron beam reaches the data recording layer to be minimized thereby maximizing the data recording density.

摘要翻译： 一种快速数据记录/再现方法，采用该记录系统的数据记录系统，用于该系统的介质和跟踪方法，其中记录/再现方法包括制备具有通过电子吸收产生相变的数据记录层的介质 在与数据记录层隔开预定间隔的位置处使用电子发生源产生电子，在电子和回旋加速器的移动电子的路径上形成磁场，通过局部熔化和冷却来记录数据 电子由数据记录层。 在与电子碰撞期间，微尖端不接触数据记录层，因此不会对微尖端造成损伤。 本发明允许电子束到达数据记录层的区域最小化，从而最大化数据记录密度。

公开(公告)号：US20060181220A1

公开(公告)日：2006-08-17

申请号：US11254793

申请日：2005-10-21

申请人： Chang-wook Moon ,  In-kyeong Yoo

发明人： Chang-wook Moon ,  In-kyeong Yoo

IPC分类号： H01L21/00 ,  H01J7/24

CPC分类号： H01J9/025

摘要： A method and apparatus for fabricating an emitter by colliding an arc with the surface of a wafer inside a vacuum chamber are provided. The apparatus includes: a vacuum chamber in which a wafer is inserted; a magnetic field generating unit for generating a uniform magnetic field inside the vacuum chamber; an electric field generating unit for forming an electric field parallel to the magnetic field inside the vacuum chamber; and a master emitter for emitting electrons towards the wafer. The electrons emitted from the master emitter move along the magnetic field and the electric field. The arc is generated when the electric field or the driving voltage surpasses a threshold by controlling the strength of the electric field and the driving voltage of the master emitter. Thus, the surface of the wafer is instantaneously melted and solidified by the arc, thereby forming the emitter with a sharp tip on the surface of the wafer.

摘要翻译： 提供了一种用于通过使电弧与真空室内的晶片的表面碰撞来制造发射器的方法和装置。 该装置包括：其中插入有晶片的真空室; 磁场产生单元，用于在真空室内产生均匀的磁场; 电场产生单元，用于形成与真空室内的磁场平行的电场; 以及用于向晶片发射电子的主发射器。 从主发射器发射的电子沿着磁场和电场移动。 当电场或驱动电压通过控制电场的强度和主发射极的驱动电压而超过阈值时，产生电弧。 因此，晶片的表面被电弧瞬间熔化和凝固，从而在晶片的表面上形成具有尖锐尖端的发射极。

公开(公告)号：US20060086966A1

公开(公告)日：2006-04-27

申请号：US11296510

申请日：2005-12-08

申请人： In-kyeong Yoo ,  Byong-man Kim

发明人： In-kyeong Yoo ,  Byong-man Kim

IPC分类号： H01L29/76

CPC分类号： B82Y10/00 ,  G11C2216/08 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

摘要： A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.

公开(公告)号：US06992923B2

公开(公告)日：2006-01-31

申请号：US11097157

申请日：2005-04-04

申请人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

发明人： Dong-wook Kim ,  In-kyeong Yoo ,  Jung-hyun Sok ,  June-key Lee

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A single transistor type magnetic random access memory device and a method of operating and manufacturing the same, wherein the single transistor type magnetic random access memory device includes a substrate, first and second doped regions spaced apart from each other, a gate dielectric layer on a portion of the semiconductor substrate between the first and second doped regions, a magnetic tunnel junction on the gate dielectric layer, word lines on the magnetic tunnel junction extending in a first direction which is the same direction as the second doped region, bit lines connected to the first doped region in a second direction perpendicular to the first direction, and an insulating layer covering the gate dielectric layer, the magnetic tunnel junction, and the word lines. The single transistor type magnetic random access memory device has a simple circuit structure, has a prolonged lifetime and is easy to manufacture.

公开(公告)号：US06953946B2

公开(公告)日：2005-10-11

申请号：US10674459

申请日：2003-10-01

申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC分类号： G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L29/06 ,  H01L29/12 ,  H01L29/82 ,  H01L43/00

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

摘要： An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

摘要翻译： 提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。 电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层 模式。 该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。 发射极在绝缘层内提供均匀的电场，并简化其制造方法。