Method and apparatus for a monolithic integrated MESFET and p-i-n optical receiver
    2.
    发明授权
    Method and apparatus for a monolithic integrated MESFET and p-i-n optical receiver 失效
    单片集成MESFET和p-i-n光接收机的方法和装置

    公开(公告)号:US06429499B1

    公开(公告)日:2002-08-06

    申请号:US09573748

    申请日:2000-05-18

    IPC分类号: H01L31075

    摘要: Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p region in a p-well of the substrate and forming at least one n region in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p region in an absorption region of the substrate when forming the at least one p region in the p well of the FET and forming at least one n region in the absorption region of the substrate when forming the at least one n region in the p-well of the FET.

    摘要翻译: 公开了用于在半导体衬底上制造集成的FET和光电检测器光接收器的半导体结构和制造工艺。 通过在衬底的p阱中形成至少一个p区并在衬底的p阱中形成至少一个n区形成FET。 当在FET的p阱中形成至少一个p区域并且在该阱的吸收区域中形成至少一个n区域时,通过在衬底的吸收区域中形成至少一个p区域而在衬底中形成引脚光电探测器 当在FET的p阱中形成至少一个n区时,衬底。

    Method and apparatus for a monolithic integrated mesfet and p-i-n optical receiver
    3.
    发明授权
    Method and apparatus for a monolithic integrated mesfet and p-i-n optical receiver 失效
    单片集成滤波器和p-i-n光接收机的方法和装置

    公开(公告)号:US06673645B2

    公开(公告)日:2004-01-06

    申请号:US10142093

    申请日:2002-05-08

    IPC分类号: H01L2100

    摘要: Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p channel in a p-well of the substrate and forming at least one n channel in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p well of the FET and forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.

    摘要翻译: 公开了用于在半导体衬底上制造集成的FET和光电检测器光接收器的半导体结构和制造工艺。 通过在基板的p阱中形成至少一个p沟道并在衬底的p阱中形成至少一个n沟道而形成FET。 当在FET的p阱中形成至少一个p沟道并且在该阱的吸收区域中形成至少一个n沟道时,通过在衬底的吸收区域中形成至少一个p沟道而在衬底中形成pin光电检测器 在FET的p阱中形成至少一个n沟道时的衬底。

    Optical power meter derived from common-mode voltage of optical transimpedance amplifier
    4.
    发明授权
    Optical power meter derived from common-mode voltage of optical transimpedance amplifier 失效
    光功率计源自光互阻放大器的共模电压

    公开(公告)号:US06528777B2

    公开(公告)日:2003-03-04

    申请号:US09761526

    申请日:2001-01-16

    IPC分类号: H01J4014

    摘要: An optical transceiver with a transimpedance amplifier generates a dynamic common mode voltage of the peak-to-peak output current of the photodetector for use as an in-situ optical power meter. Peak-to-peak voltage signal are imposed on the common mode voltage so optical power measurements are obtained using preexisting electrical contacts. An nfet and a capacitor of the transimpedance amplifier smooths the peak-to-peak voltage to create the control signal for the common mode voltage. The common mode current is mirrored into a bank of pfets at the output stage to create a current sink. Depending upon the potential of the common mode voltage, more or less current will be drawn from the peak-to-peak voltage signals output from a final differential amplifier stage of the transimpedance amplifier.

    摘要翻译: 具有跨阻抗放大器的光收发器产生光电检测器的峰 - 峰输出电流的动态共模电压,用作原位光功率计。 峰值电压信号施加在共模电压上,因此可以使用预先存在的电触点获得光功率测量。 跨导放大器的nfet和电容器平滑峰峰值电压以产生共模电压的控制信号。 在输出阶段,共模电流被镜像到一组pfets中,以创建电流接收器。 根据共模电压的电位,将从跨阻抗放大器的最终差分放大器级输出的峰 - 峰电压信号中得到或多或少的电流。

    Packaged multicore fiber optical transceiver module
    9.
    发明授权
    Packaged multicore fiber optical transceiver module 有权
    封装多芯光纤收发模块

    公开(公告)号:US08488921B2

    公开(公告)日:2013-07-16

    申请号:US13105104

    申请日:2011-05-11

    摘要: A method and structure for coupling to a plurality of multicore optical fiber strands. A first plurality of optoelectronic devices is provided on a surface of a substrate, the first optoelectronic devices being arranged in a 2D array pattern that corresponds to a 2D array pattern corresponding to different light cores of a first multicore optical fiber. A second plurality of optoelectronic devices is provided on the surface of the substrate, the second optoelectronic devices being arranged in a 2D array pattern that corresponds to a 2D array pattern corresponding to different light cores of a second multicore optical fiber. Each optoelectronic device on the substrate surface provides one of a receive function and a transmit function for interacting with a corresponding core of a multicore optical fiber strand.

    摘要翻译: 一种用于耦合到多个多芯光纤线束的方法和结构。 第一多个光电子器件设置在衬底的表面上,第一光电子器件被布置成2D阵列图案,其对应于对应于第一多芯光纤的不同光核的2D阵列图案。 第二多个光电子器件设置在衬底的表面上,第二光电器件被布置成2D阵列图案,其对应于对应于第二多芯光纤的不同光芯的2D阵列图案。 衬底表面上的每个光电子器件提供了与多芯光纤线的对应芯相互作用的接收功能和发射功能之一。

    PACKAGED MULTICORE FIBER OPTICAL TRANSCEIVER MODULE
    10.
    发明申请
    PACKAGED MULTICORE FIBER OPTICAL TRANSCEIVER MODULE 有权
    包装多光纤光纤收发器模块

    公开(公告)号:US20120014639A1

    公开(公告)日:2012-01-19

    申请号:US13105104

    申请日:2011-05-11

    IPC分类号: G02B6/122 G02B6/02 G02B6/13

    摘要: A method and structure for coupling to a plurality of multicore optical fiber strands. A first plurality of optoelectronic devices is provided on a surface of a substrate, the first optoelectronic devices being arranged in a 2D array pattern that corresponds to a 2D array pattern corresponding to different light cores of a first multicore optical fiber. A second plurality of optoelectronic devices is provided on the surface of the substrate, the second optoelectronic devices being arranged in a 2D array pattern that corresponds to a 2D array pattern corresponding to different light cores of a second multicore optical fiber. Each optoelectronic device on the substrate surface provides one of a receive function and a transmit function for interacting with a corresponding core of a multicore optical fiber strand.

    摘要翻译: 一种用于耦合到多个多芯光纤线束的方法和结构。 第一多个光电子器件设置在衬底的表面上,第一光电子器件被布置成2D阵列图案,其对应于对应于第一多芯光纤的不同光核的2D阵列图案。 第二多个光电子器件设置在衬底的表面上,第二光电器件被布置成2D阵列图案,其对应于对应于第二多芯光纤的不同光芯的2D阵列图案。 衬底表面上的每个光电子器件提供了与多芯光纤线的对应芯相互作用的接收功能和发射功能之一。