摘要:
Embodiments of inductive communication devices include first and second galvanically isolated IC die. The first IC die has a first coil proximate to a first surface of the first IC die, and the second IC die has a second coil proximate to a first surface of the second IC die. The first and second IC die are arranged so that the first surfaces of the first and second IC die face each other, and the first coil and the second coil are aligned across a gap between the first and second IC die. One or more dielectric components are positioned within the gap directly between the first and second coils. During operation, a first signal is provided to the first coil, and the first coil converts the signal into a time-varying magnetic field. The magnetic field couples with the second coil, which produces a corresponding second signal.
摘要:
Embodiments of inductive communication devices include first and second galvanically isolated IC die and a dielectric structure. Each IC die has a coil proximate to a first surface of the IC die. The IC die are arranged so that the first surfaces of the IC die face each other, and the first coil and the second coil are aligned across a gap between the first and second IC die. The dielectric structure is positioned within the gap directly between the first and second coils, and a plurality of conductive structures are positioned in or on the dielectric structure and electrically coupled with the second IC die. The conductive structures include portions configured to function as bond pads, and the bond pads may be coupled to package leads using wirebonds. During operation, signals are conveyed between the IC die through inductive coupling between the coils.
摘要:
An interface for processing a variable reluctance sensor signal provided by a variable reluctance sensor including an integrator, an arming comparator and a detect circuit. The integrator includes an input for receiving the variable reluctance sensor signal and an output providing an integrated signal indicative of total flux change of the variable reluctance sensor. The arming comparator compares the integrated signal with a predetermined arming threshold and provides an armed signal indicative thereof. The detect circuit provides a reset signal after the armed signal is provided to reset the integrator. A corresponding method of processing the variable reluctance sensor signal is also described.
摘要:
A variable reluctance sensor system for processing a variable reluctance sensor signal including an arming comparator and an arming circuit. The arming comparator compares the variable reluctance sensor signal with an arming threshold which decreases proportional to 1/t from a predetermined maximum level and asserts an armed signal when the variable reluctance sensor signal reaches the arming threshold. The arming threshold may be decreased based on a scaling factor multiplied by 1/t to ensure detection of each pulse of the variable reluctance sensor signal. The arming threshold may decrease to a predetermined minimum level sufficiently low to intersect the variable reluctance sensor signal and sufficiently high relative to an expected noise level. The arming threshold is reset in response to a timing event, such as zero crossing of the variable reluctance sensor signal.
摘要:
An interface for processing a variable reluctance sensor signal provided by a variable reluctance sensor including an integrator, an arming comparator and a detect circuit. The integrator includes an input for receiving the variable reluctance sensor signal and an output providing an integrated signal indicative of total flux change of the variable reluctance sensor. The arming comparator compares the integrated signal with a predetermined arming threshold and provides an armed signal indicative thereof. The detect circuit provides a reset signal after the armed signal is provided to reset the integrator. A corresponding method of processing the variable reluctance sensor signal is also described.
摘要:
A variable reluctance sensor system for processing a variable reluctance sensor signal including an arming comparator and an arming circuit. The arming comparator compares the variable reluctance sensor signal with an arming threshold which decreases proportional to 1/t from a predetermined maximum level and asserts an armed signal when the variable reluctance sensor signal reaches the arming threshold. The arming threshold may be decreased based on a scaling factor multiplied by 1/t to ensure detection of each pulse of the variable reluctance sensor signal. The arming threshold may decrease to a predetermined minimum level sufficiently low to intersect the variable reluctance sensor signal and sufficiently high relative to an expected noise level. The arming threshold is reset in response to a timing event, such as zero crossing of the variable reluctance sensor signal.
摘要:
Operation of an insulated gate bipolar transistor (IGBT) is monitored by an apparatus that has a capacitor connected between a collector of the IGBT and an input node. A processing circuit, coupled to the input node, responds to current flowing through the capacitor by providing an indication whether a voltage level at the collector is changing and the rate of that change. The processing circuit also employs the capacitor current to provide an output voltage that indicates the voltage at the IGBT collector.
摘要:
A semiconductor device may include first, second, and third semiconductor layers. The first and third layers may have a first dopant type, and the second layer may have a second dopant type. A first region within the third semiconductor layer may have the second dopant type. A second region between the first region and the second semiconductor layer may have the first dopant type. A third region above the second region may have the first dopant type. A fourth semiconductor region adjacent to the third region may have a first concentration of the second dopant type. A source contact region may have a second concentration of the second dopant type adjacent to the third semiconductor region and adjacent to the fourth semiconductor region. The second concentration may be higher than the first concentration.
摘要:
An overvoltage protection circuit (11) for decoupling circuitry (12) from a voltage applied to an input (38). The overvoltage protection circuit (11) is integrated on an integrated circuit along with the circuitry (12). The overvoltage protection circuit (11) comprises a sense circuit (13), a timing circuit (14), a decoupling circuit (16), and a circuit (17). The sense circuit (13) detects when the voltage applied to the input (38) exceeds a threshold voltage. The timing circuit (14) is responsive to the sense circuit (13) and determines when the voltage exceeds the threshold voltage for a predetermined time. The decoupling circuit (16) is responsive to the timing circuit (14) and decouples the circuitry from the voltage applied to the input (38). The circuit (17) generates a logic signal indicating the circuitry has been decoupled.
摘要:
A dual loop DC-to-DC converter is provided that includes a first control loop that maintains a DC output voltage (VOUT) less than or equal to a desired maximum value of the VOUT, a second control loop that operates simultaneously with the first control loop and maintains a DC input voltage (VIN) greater than or equal to a desired minimum value of the VIN, and a duty cycle selection module. The first control loop generates a first clock signal having a first duty cycle, and the second control loop generates a second clock signal having a second duty cycle. The duty cycle selection module continuously determines which one of the first duty cycle and the second duty cycle has a lower duty cycle value, and continuously generates a PWM output signal having a modulated duty cycle equal to the lower duty cycle value.