Forming Features on a Substrate Having Varying Feature Densities
    10.
    发明申请
    Forming Features on a Substrate Having Varying Feature Densities 失效
    在不同特征密度的基体上形成特征

    公开(公告)号:US20120313250A1

    公开(公告)日:2012-12-13

    申请号:US13155776

    申请日:2011-06-08

    摘要: A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material to expose portions of the substrate using a planarizing process, and removing residual portions of the conductive material disposed on the substrate using a reactive ion etch (RIE) process.

    摘要翻译: 一种方法包括在衬底中形成空腔,在空腔中沉积导电材料层并在衬底的暴露部分上方,使用平坦化工艺除去导电材料的部分以暴露衬底的部分,以及除去衬底的剩余部分 使用反应离子蚀刻(RIE)工艺设置在基板上的导电材料。