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    REFRIGERATOR
    3.
    发明申请
    REFRIGERATOR 有权
    冰箱

    公开(公告)号：US20100122543A1

    公开(公告)日：2010-05-20

    申请号：US12620721

    申请日：2009-11-18

    申请人： Dong-Hoon LEE ,  Dong-Hoon Lee ,  Tae-Hee LEE

    发明人： Dong-Hoon LEE ,  Dong-Hoon Lee ,  Tae-Hee LEE

    IPC分类号： F25C1/22 ,  F25C5/02

    CPC分类号： F25C5/08 ,  F25C2305/022 ,  F25C2400/10 ,  F25C2500/06 ,  F25C2700/12 ,  F25C2700/14 ,  F25D2317/061

    摘要： A refrigerator includes an ice maker positioned in the refrigerator and configured to make ice. The refrigerator also includes a plate positioned at an open side of the ice making tray and configured to reduce water overflow. The refrigerator further includes a cool air inlet passage configured to allow cool air to be introduced to an area inside of the plate. In addition, the refrigerator includes a cool air outlet passage that is separate from the cool air inlet passage, and configured to allow release of cool air from the area inside of the plate to an exterior of the plate.

    摘要翻译： 冰箱包括位于冰箱中的制冰机，其构造成制冰。 冰箱还包括位于制冰盘的开口侧的板，并且被配置为减少水溢出。 冰箱还包括冷空气入口通道，其构造成允许冷空气被引入到板内部的区域。 此外，冰箱包括与冷空气入口通道分离的冷空气出口通道，并且构造成允许冷空气从板内部的区域释放到板的外部。

    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 审中-公开
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号：US20100155721A1

    公开(公告)日：2010-06-24

    申请号：US12645433

    申请日：2009-12-22

    申请人： Je-Hun LEE ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Do-Hyun KIM

    发明人： Je-Hun LEE ,  Tae-Hyung IHN ,  Dong-Hoon LEE ,  Do-Hyun KIM

    IPC分类号： H01L29/786 ,  H01L21/34

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225

    摘要： A thin film transistor (TFT) array substrate is provided. The thin film transistor (TFT) array substrate includes an insulating substrate, an oxide semiconductor layer formed on the insulating substrate and including an additive element, a gate electrode overlapping the oxide semiconductor layer, and a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, wherein the oxygen bond energy of the additive element is greater than that of a base element of the oxide semiconductor layer.

    摘要翻译： 提供薄膜晶体管（TFT）阵列基板。 薄膜晶体管（TFT）阵列基板包括绝缘基板，形成在绝缘基板上并包括添加元件的氧化物半导体层，与氧化物半导体层重叠的栅极电极以及介于氧化物半导体层和 所述栅电极，其中所述添加元素的氧键能量大于所述氧化物半导体层的基体元素的氧键能。

    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    显示基板及其制造方法

    公开(公告)号：US20120286259A1

    公开(公告)日：2012-11-15

    申请号：US13431448

    申请日：2012-03-27

    申请人： Jae-Woo PARK ,  Dong-Hoon LEE ,  Sung-Haeng CHO ,  Woo-Geun LEE ,  Kap-Soo YOON

    发明人： Jae-Woo PARK ,  Dong-Hoon LEE ,  Sung-Haeng CHO ,  Woo-Geun LEE ,  Kap-Soo YOON

    IPC分类号： H01L29/786 ,  H01L21/44

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

    摘要： Exemplary embodiments of the present invention provide a display substrate including a gate electrode, an oxide semiconductor pattern, a source electrode, a drain electrode, and an etch stop pattern. The gate electrode may be disposed on a base substrate. The oxide semiconductor pattern may be disposed over the gate electrode. The source electrode may be disposed on the oxide semiconductor pattern. The drain electrode may be disposed on the oxide semiconductor pattern and spaced apart from the source electrode. The etch stop pattern may be disposed over the gate electrode, the etch stop pattern may be overlapping a space between the source electrode and the drain electrode and may include a metal oxide. The reliability of the display substrate may, therefore, be improved.

    摘要翻译： 本发明的示例性实施例提供了包括栅电极，氧化物半导体图案，源电极，漏电极和蚀刻停止图案的显示基板。 栅电极可以设置在基底基板上。 氧化物半导体图案可以设置在栅极上。 源极可以设置在氧化物半导体图案上。 漏极可以设置在氧化物半导体图案上并与源电极间隔开。 蚀刻停止图案可以设置在栅电极之上，蚀刻停止图案可以与源电极和漏电极之间的空间重叠，并且可以包括金属氧化物。 因此，可以提高显示基板的可靠性。

    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    液晶显示装置及其制造方法

    公开(公告)号：US20110228207A1

    公开(公告)日：2011-09-22

    申请号：US13069277

    申请日：2011-03-22

    申请人： Seung-Kyu LEE ,  Dong-Wook KIM ,  Chul-Ho KIM ,  Dong-Hoon LEE

    发明人： Seung-Kyu LEE ,  Dong-Wook KIM ,  Chul-Ho KIM ,  Dong-Hoon LEE

    IPC分类号： G02F1/1339 ,  B05D5/12 ,  B05D5/06 ,  B05D3/06 ,  B05D3/02

    CPC分类号： G02F1/133351 ,  G02F1/133707 ,  G02F1/133788 ,  G02F1/13394 ,  G02F2001/133742

    摘要： A liquid crystal display (LCD) device and a method of manufacturing the same are disclosed. The liquid crystal display device includes: a plurality of cell regions including a first substrate upon which a pixel electrode is formed, a second substrate upon which a common electrode is formed, and a liquid crystal layer interposed between the first substrate and the second substrate, and a cutting region formed between the plurality of cell regions, and including the first substrate and the second substrate extended from the plurality of cell regions, and at least one peripheral spacer interposed between the first substrate and the second substrate, where the peripheral spacer contacts at least one of the first and second substrates.

    摘要翻译： 公开了一种液晶显示器（LCD）装置及其制造方法。 液晶显示装置包括：多个单元区域，包括形成有像素电极的第一基板，形成有公共电极的第二基板和插入在第一基板和第二基板之间的液晶层， 以及形成在所述多个单元区域之间并且包括从所述多个单元区域延伸的所述第一基板和所述第二基板的切割区域以及插入在所述第一基板和所述第二基板之间的至少一个外围间隔件，其中所述外围间隔件接触 所述第一和第二基板中的至少一个。

    THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF
    9.
    发明申请
    THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF 有权
    薄膜晶体管面板及其制作方法

    公开(公告)号：US20110012203A1

    公开(公告)日：2011-01-20

    申请号：US12605566

    申请日：2009-10-26

    申请人： Chang-Oh JEONG ,  Dong-Hoon LEE

    发明人： Chang-Oh JEONG ,  Dong-Hoon LEE

    IPC分类号： H01L27/088 ,  H01L21/84

    CPC分类号： H01L27/12 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/66765

    摘要： A thin film transistor panel includes; an insulating substrate, a gate line including a gate electrode disposed on the insulating substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer, the semiconductor layer including a sidewall, a data line including a source electrode disposed on the semiconductor layer, a drain electrode disposed substantially opposite to and spaced apart from the source electrode, a first protective film disposed on the data line, the first protective film including a sidewall, a second protective film disposed on the first protective film and including a sidewall, and a pixel electrode electrically connected to the drain electrode, wherein the sidewall of the second protective film is disposed inside an area where the sidewall of the first protective film is disposed, and the source electrode and the drain electrode cover the sidewall of the semiconductor layer.

    摘要翻译： 薄膜晶体管面板包括： 绝缘基板，包括设置在绝缘基板上的栅电极的栅极线，设置在栅极上的栅极绝缘层，设置在栅极绝缘层上的半导体层，包括侧壁的半导体层，包括源极的数据线 设置在所述半导体层上的电极，与所述源极电极基本相对并间隔设置的漏电极，设置在所述数据线上的第一保护膜，所述第一保护膜包括侧壁，设置在所述第一保护膜上的第二保护膜 并且包括侧壁和与漏电极电连接的像素电极，其中第二保护膜的侧壁设置在设置有第一保护膜的侧壁的区域的内侧，源电极和漏电极覆盖 半导体层的侧壁。