摘要:
Provided is a regenerative cell extraction system. The regenerative cell extraction system includes: a regenerative cell separation unit which separates fat tissue; and a regenerative cell extraction unit. The regenerative cell separation unit includes: a sub container which is rotated by a torque applied from an external source and includes a space in which fat tissue is housed; a hollow main pipe which is inserted into the sub container; and a pump which is connected to the main pipe. In addition, the regenerative cell extraction unit receives a regenerative cell-containing substance, which is obtained after the fat tissue is centrifuged by the regenerative cell separation unit, from the regenerative cell separation unit, and extracts regenerative cells from the substance by centrifuging the substance. The regenerative cell extraction unit includes: a main container which is rotated by a torque applied from an external source; a hollow first discharge pipe which is inserted into the main container; and a suction device which is connected to the first discharge pipe; and a plurality of protruding housing portions which bulge outwards along a radius direction with respect to a center of rotation of the main container to accommodate relatively heavy components among components separated from the substance.
摘要:
of A method of forming a dielectric layer includes the steps of forming an electrode on a microelectronic substrate, and forming depressions and protrusions on exposed portions of the electrode thereby increasing a surface area thereof. An exposed portion of the electrode including the depressions and protrusions is nitrified, and the electrode is not exposed to oxygen during and between the steps of forming the depressions and protrusions and nitrifying the exposed portion of the electrode. A nitride layer is then formed on a nitrified electrode. Related structures are also discussed.
摘要:
A dry etching method and apparatus improves the uniformity of etching a wafer in the manufacture of a semiconductor device. The dry etching apparatus has a susceptor supporting the wafer, a cooling system installed in the susceptor, an upper RF (radio frequency) electrode which may incorporate a gas diffuser for spraying reactive gas toward the wafer, and an RF power source for producing an electric field used to react the gas and generate plasma. The gap between the upper RF electrode and the susceptor is configured to accommodate for distortions in the wafer or other processing requirements. In addition, the nozzles of the gas diffuser can be configured to spray different amounts of gas to also enhance the etching uniformity. Finally, one of the electrodes may be divided into concentric sections. In this case, the RF power source can generate electric fields of different intensities at the sections. When the divided electrode is the susceptor, the cooling system cools the sections to different temperatures to in turn temperature-condition the wafer in a manner determined in advance to enhance the uniformity of the etching process.
摘要:
A distributor with controlled switching elements (CSE) which simplifies hardware construction by distributing the function of a running adder into a reverse banyan network. The distributor comprises a CSE-based network using switching stages, each switching stage having control switching elements. A control signal input stage switches two packet input signal switching channels, each stage receiving each control signal from an output stage having switching elements. An active packet counter counts and generates an output signal which represents the number of active packets inputted to the CSE network. A tail-of-queue register is used for storing output vectors.
摘要:
Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
摘要:
A display substrate includes a base substrate, a switching element, a gate line, a data line and a pixel electrode. Each of the gate line and the data line includes a first metal layer, and a second metal layer directly on the first metal layer. The switching element is on the base substrate, and includes a control electrode and an input electrode or an output electrode. The control electrode includes the first metal layer and excludes the second metal layer, and extends from the gate line. The input electrode or the output electrode includes a second metal layer and excludes the first metal layer. The input electrode extends from the data line. The pixel electrode is electrically connected to the output electrode of the switching element through a first contact hole, and includes a transparent conductive layer.
摘要:
A display substrate includes a base substrate, a switching element, a gate line, a data line and a pixel electrode. Each of the gate line and the data line includes a first metal layer, and a second metal layer directly on the first metal layer. The switching element is on the base substrate, and includes a control electrode and an input electrode or an output electrode. The control electrode includes the first metal layer and excludes the second metal layer, and extends from the gate line. The input electrode or the output electrode includes a second metal layer and excludes the first metal layer. The input electrode extends from the data line. The pixel electrode is electrically connected to the output electrode of the switching element through a first contact hole, and includes a transparent conductive layer.
摘要:
A developing solution feed system for a semiconductor photolithography process feeds the developing solution while removing any gas contained in the solution at a high solution feed pressure. The developing solution feed system has a plurality of feed tanks and a developing solution feed line having a plurality of first connecting pipes, each connected to the feed tanks, a second connecting pipe connected to the first connecting pipe to be converged into one passage, and a plurality of third connecting pipes branching out from the second connecting pipe. The system also contains nozzles connected to the third connecting pipes to thereby sputter the developing solution onto wafers each located in process chambers, a gas removal device installed in the one passage of the second connecting pipe to thereby remove gas contained in the developing solution, and shut off valves, each installed in the third connecting pipes to thereby open and close passages, so that the developing solution can selectively be fed into only one process chamber at a time through the third connecting pipes.
摘要:
A wireless localization technology using efficient multilateration in a wireless sensor network is disclosed. After calculating estimated distances from each of at least three reference nodes to a blind node using received signal strength of wireless signals that the at least three reference nodes received from the blind node, the estimated location of the blind node is obtained through multilateration using the calculated estimated distances. To correct error in the estimated location, the estimated distances are used, and the error correction direction and error correction distance for the estimated location are calculated by applying a largest weight to the reference node closest to the estimated location. The error of the estimated location is corrected by move the estimated location of the blind node by the calculated error correction direction and error correction distance. Calculation for the error correction is very simple and fast.
摘要:
Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.