公开(公告)号：US20140273374A1

公开(公告)日：2014-09-18

申请号：US13842694

申请日：2013-03-15

申请人： Joseph Yedinak ,  Richard Stokes ,  Sukhendu Deb Roy ,  Steven Sapp

发明人： Joseph Yedinak ,  Richard Stokes ,  Sukhendu Deb Roy ,  Steven Sapp

IPC分类号： H01L29/66

CPC分类号： H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7805 ,  H01L29/7813

摘要： Vertical doping in power semiconductor devices and methods for making such dopant profiles are described. The methods include providing a semiconductor substrate, providing an epitaxial layer on the substrate, the epitaxial layer comprising a bottom portion containing a first conductivity type dopant in a substantially constant, first concentration throughout the bottom portion; and an upper portion containing a first conductivity type dopant having a second concentration lower than the first concentration; providing a trench in the epitaxial layer; forming a transistor structure in the trench; and forming a well region in the upper part of the epitaxial layer adjacent the trench, the well region containing a second conductivity type dopant that is opposite the first conductivity type. Other embodiments are described.

摘要翻译： 描述了功率半导体器件中的垂直掺杂和用于制造这种掺杂剂分布的方法。 所述方法包括提供半导体衬底，在衬底上提供外延层，所述外延层包含底部，该底部包含基本上恒定的第一浓度遍及整个底部的第一导电型掺杂剂; 和含有第二浓度低于第一浓度的第一导电型掺杂剂的上部; 在外延层中提供沟槽; 在沟槽中形成晶体管结构; 以及在与所述沟槽相邻的所述外延层的上部中形成阱区，所述阱区包含与所述第一导电类型相反的第二导电型掺杂剂。 描述其他实施例。

公开(公告)号：US20050167742A1

公开(公告)日：2005-08-04

申请号：US11026276

申请日：2004-12-29

申请人： Ashok Challa ,  Alan Elbanhawy ,  Thomas Grebs ,  Nathan Kraft ,  Dean Probst ,  Rodney Ridley ,  Steven Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter Wilson ,  Joseph Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak Sani ,  Richard Stokes ,  Gary Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James Murphy ,  Gordon Madson ,  Bruce Marchant ,  Christopher Rexer ,  Christopher Kocon ,  Debra Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Thomas Grebs ,  Nathan Kraft ,  Dean Probst ,  Rodney Ridley ,  Steven Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter Wilson ,  Joseph Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak Sani ,  Richard Stokes ,  Gary Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James Murphy ,  Gordon Madson ,  Bruce Marchant ,  Christopher Rexer ,  Christopher Kocon ,  Debra Woolsey

IPC分类号： G06F1/26 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/336 ,  H01L21/68 ,  H01L23/495 ,  H01L23/498 ,  H01L29/06 ,  H01L29/165 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H02M3/00 ,  H02M3/335

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

摘要翻译： 公开了用于改进的功率器件的各种实施例及其制造方法，封装和结合其的用于各种功率电子应用的电路。 本发明的一个方面结合了许多电荷平衡技术和用于减小寄生电容的其它技术，以获得具有改进的电压性能，较高开关速度和较低导通电阻的功率器件的不同实施例。 本发明的另一方面提供了用于低，中和高电压装置的改进的端接结构。 根据本发明的其它方面提供了改进的功率器件制造方法。 提出了具体的处理步骤的改进，例如沟槽的形成，沟槽内的电介质层的形成，台面结构的形成以及用于降低衬底厚度的工艺等。 根据本发明的另一方面，电荷平衡功率器件在同一管芯上并入温度和电流检测元件，例如二极管。 本发明的其它方面改进了用于功率器件的等效串联电阻（ESR），在与功率器件相同的芯片上并入附加电路，并提供对电荷平衡功率器件的封装的改进。

公开(公告)号：US20060214222A1

公开(公告)日：2006-09-28

申请号：US11445111

申请日：2006-05-31

申请人： Ashok Challa ,  Alan Elbanhawy ,  Thomas Grebs ,  Nathan Kraft ,  Dean Probst ,  Rodney Ridley ,  Steven Sapp ,  Qi Wang ,  Chongman Yun ,  J. Lee ,  Peter Wilson ,  Joseph Yedinak ,  J. Jung ,  H. Jang ,  Babak Sani ,  Richard Stokes ,  Gary Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James Murphy ,  Gordon Madson ,  Bruce Marchant ,  Christopher Rexer ,  Christopher Kocon ,  Debra Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Thomas Grebs ,  Nathan Kraft ,  Dean Probst ,  Rodney Ridley ,  Steven Sapp ,  Qi Wang ,  Chongman Yun ,  J. Lee ,  Peter Wilson ,  Joseph Yedinak ,  J. Jung ,  H. Jang ,  Babak Sani ,  Richard Stokes ,  Gary Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James Murphy ,  Gordon Madson ,  Bruce Marchant ,  Christopher Rexer ,  Christopher Kocon ,  Debra Woolsey

IPC分类号： H01L29/76

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

公开(公告)号：US20060214221A1

公开(公告)日：2006-09-28

申请号：US11445020

申请日：2006-05-31

申请人： Ashok Challa ,  Alan Elbanhawy ,  Thomas Grebs ,  Nathan Kraft ,  Dean Probst ,  Rodney Ridley ,  Steven Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter Wilson ,  Joseph Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak Sani ,  Richard Stokes ,  Gary Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James Murphy ,  Gordon Madson ,  Bruce Marchant ,  Christopher Rexer ,  Christopher Kocon ,  Debra Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Thomas Grebs ,  Nathan Kraft ,  Dean Probst ,  Rodney Ridley ,  Steven Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter Wilson ,  Joseph Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak Sani ,  Richard Stokes ,  Gary Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James Murphy ,  Gordon Madson ,  Bruce Marchant ,  Christopher Rexer ,  Christopher Kocon ,  Debra Woolsey

IPC分类号： H01L29/76

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

公开(公告)号：US20080135931A1

公开(公告)日：2008-06-12

申请号：US12032123

申请日：2008-02-15

申请人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridlay ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak S. Sanl ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

发明人： Ashok Challa ,  Alan Elbanhawy ,  Thomas E. Grebs ,  Nathan L. Kraft ,  Dean E. Probst ,  Rodney S. Ridlay ,  Steven P. Sapp ,  Qi Wang ,  Chongman Yun ,  J.G. Lee ,  Peter H. Wilson ,  Joseph A. Yedinak ,  J.Y. Jung ,  H.C. Jang ,  Babak S. Sanl ,  Richard Stokes ,  Gary M. Dolny ,  John Mytych ,  Becky Losee ,  Adam Selsley ,  Robert Herrick ,  James J. Murphy ,  Gordon K. Madson ,  Bruce D. Marchant ,  Christopher L. Rexer ,  Christopher B. Kocon ,  Debra S. Woolsey

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.

摘要翻译： 半导体功率器件包括第一导电类型的漂移区域，在漂移区域上方延伸并且具有与第一导电类型相反的第二导电类型的阱区域，延伸穿过阱区域并进入漂移区域的有源沟槽，源极区域 具有形成在邻近有源沟槽的阱区中的第一导电类型，以及在阱区下延伸并设置在器件的有源区的外边缘处的第一端接沟槽。 有源沟槽的侧壁和底部衬有介电材料，并且基本上填充有形成上电极的第一导电层和形成下电极的第二导电层，上电极设置在下电极之上， 电介质材料。 第一端接沟槽可以衬有一层电介质材料，其比在有源沟槽侧壁上的电介质材料更厚，并且基本上填充有导电材料。

公开(公告)号：US20090008706A1

公开(公告)日：2009-01-08

申请号：US11964419

申请日：2007-12-26

申请人： Joseph A. Yedinak ,  Nathan L. Kraft ,  Christopher B. Kocon ,  Richard Stokes

发明人： Joseph A. Yedinak ,  Nathan L. Kraft ,  Christopher B. Kocon ,  Richard Stokes

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor power device includes active trenches that define an active area and an edge area that is located outside of the active area. The active trenches include a lower shield poly, an upper gate poly, a first oxide layer and a second oxide layer wherein the first oxide layer separates the lower shield poly from the upper gate poly and the second oxide layer covers the upper gate poly. The lower shield poly, upper gate poly, first oxide layer and second oxide layer conform to the shape of the active trench and extend from the active trench to a surface of the edge area. The edge area includes a first opening that extends through the first oxide layer to the lower shield poly and a second opening that extends through the second oxide layer to the upper gate poly. The first opening is filled with a conductive material that makes electrical contact with the lower shield poly and the second opening is filled with conductive material that makes electrical contact with the upper gate poly. The lower shield poly is electrically insulated from the substrate. The second oxide layer can be directly over the upper gate poly, the upper gate poly can be directly over the first oxide layer, the first oxide layer can be directly over the lower shield poly, and the first opening can be lower than the second opening. The device can further include a perimeter trench with extensions in the longitudinal direction that are staggered with respect to the active trenches so that there can be offset between the extensions of the perimeter trench and the active trenches.

摘要翻译： 半导体功率器件包括有源沟槽，其限定有源区域和位于有源区域外部的边缘区域。 有源沟槽包括下屏蔽多晶硅，上栅极多晶硅，第一氧化物层和第二氧化物层，其中第一氧化物层将下屏蔽多晶硅与上栅极多晶硅分开，第二氧化物层覆盖上栅极聚合物。 下屏蔽多晶硅，上栅极多晶硅，第一氧化物层和第二氧化物层符合有源沟槽的形状并从有源沟槽延伸到边缘区域的表面。 边缘区域包括延伸穿过第一氧化物层到下屏蔽多孔体的第一开口和延伸穿过第二氧化物层到第二氧化物层的第二开口到上部栅极聚合物。 第一开口填充有导电材料，其与下屏蔽多孔电接触，并且第二开口填充有与上栅极聚电接触的导电材料。 下屏蔽多晶硅与基板电绝缘。 第二氧化物层可以直接在上栅极多晶硅上方，上栅极多晶硅可以直接在第一氧化物层上方，第一氧化物层可以直接在下屏蔽多晶硅上方，并且第一开口可以低于第二开口 。 该装置还可以包括在纵向方向上延伸的周边沟槽，其相对于有源沟槽交错排列，使得可以在周边沟槽和有源沟槽的延伸部之间偏移。

公开(公告)号：US20180231178A1

公开(公告)日：2018-08-16

申请号：US15889922

申请日：2018-02-06

申请人： Richard Stokes

发明人： Richard Stokes

IPC分类号： F16M13/02 ,  A01K5/00

CPC分类号： F16M13/022 ,  A01K5/00

摘要： A tree mountable bracket for suspending a bucket therefrom. The tree mountable bucket bracket includes a V-shaped member with a first segment and a second segment extended from a vertex point forming an angle. The first segment has a first bar attached distally from the vertex point. The first bar has a first end and a second end, the first end and the second end each have a hole. The second segment has a brace attached distally from the vertex point. A cable is secured in the hole of the first end of the first bar. An extension arm is attached via a hinge to the V-shaped member at a point adjacent to the vertex point opposite of the first and the second segment. The extension arm has a chain slot on an end distal to the hinge. A pulley is attached to the extension arm adjacent to the chain slot Tree Mountable Bucket Bracket

公开(公告)号：US08129245B2

公开(公告)日：2012-03-06

申请号：US13219281

申请日：2011-08-26

申请人： Joseph A. Yedinak ,  Nathan L. Kraft ,  Christopher B. Kocon ,  Richard Stokes

发明人： Joseph A. Yedinak ,  Nathan L. Kraft ,  Christopher B. Kocon ,  Richard Stokes

IPC分类号： H01L21/336

CPC分类号： H01L29/407 ,  H01L21/26586 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/6835 ,  H01L23/4952 ,  H01L23/49816 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/495 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7396 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7805 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/7828 ,  H01L29/7831 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H02M3/00 ,  H02M3/33592 ,  H02M7/48 ,  Y02B70/1475 ,  H01L2924/00 ,  H01L2924/00014

摘要： Methods of manufacturing power semiconductor devices include forming an epitaxial and dielectric layer, patterning and etching the dielectric layer, forming a first oxide layer, forming a first conductive layer on top of the first oxide layer, etching the first conductive layer away inside an active trench, forming a second oxide layer and second conductive layer. The second conductive layer does not extend completely over the first conductive layer in a first region outside of the active trench. The methods further include forming a third oxide layer over the second conductive layer, etching a first opening through the third oxide layer exposing the second conductive layer outside the active trench, etching a second opening through the second oxide layer outside the active trench in the first region exposing the first conductive layer but not the second conductive layer, and filling the first and second openings with conductive material.

摘要翻译： 制造功率半导体器件的方法包括形成外延和电介质层，图案化和蚀刻介电层，形成第一氧化物层，在第一氧化物层的顶部形成第一导电层，在有源沟槽内部蚀刻第一导电层 ，形成第二氧化物层和第二导电层。 第二导电层在有源沟槽外部的第一区域中不完全延伸到第一导电层上。 所述方法还包括在所述第二导电层上形成第三氧化物层，蚀刻通过所述第三氧化物层的第一开口，将所述第二导电层暴露于所述有源沟槽外部，在所述第一导电层中的所述有源沟槽外蚀刻穿过所述第二氧化物层的第二开口 区域暴露第一导电层而不暴露第二导电层，以及用导电材料填充第一和第二开口。

公开(公告)号：US20110082742A1

公开(公告)日：2011-04-07

申请号：US12726841

申请日：2010-03-18

申请人： Richard Stokes

发明人： Richard Stokes

IPC分类号： G06Q30/00

CPC分类号： G06Q30/02 ,  G06Q30/0246

摘要： The present disclosure provides methods and apparatus for estimating advertisement impressions and advertiser search share. These estimates are improved by eliminating duplicate traffic based on similar words having similar traffic estimates. In addition, coverage is estimated for a particular advertiser keywords using statistical sampling. This coverage estimate is then used as a weighing factor when estimating traffic for an entire business category (e.g., group of keywords) by squaring the individual traffic estimates, summing the squared estimates, and then taking the square root of that sum.

摘要翻译： 本公开提供了用于估计广告印象和广告商搜索份额的方法和装置。 通过基于具有相似流量估计的类似词语来消除重复流量来改进这些估计。 另外，使用统计抽样估计特定广告客户关键字的覆盖率。 然后，通过对各个业务量估计进行平方，对平方估计进行求和，然后取该和的平方根来估计整个业务类别（例如，关键字组）的业务量时，将该覆盖率估计值用作权重因子。

公开(公告)号：USD534627S1

公开(公告)日：2007-01-02

申请号：US29226845

申请日：2005-04-01

申请人： Richard Stokes

设计人： Richard Stokes