摘要:
A duplexer comprising a transmit resonator device and a receive resonator device for filtering transmit and receive signals. The resonator device has a first BAW resonator for generating an acoustic wave signal from an input electric signal, a first acoustic delay for delaying the acoustic wave signal, and an intermediate BAW resonator for receiving the delayed acoustic wave signal at one end and converting the delayed acoustic wave signal to an electric signal. Through electrical coupling, the electric signal also appears at another end of the intermediate BAW resonator for generating a further acoustic wave signal at the other end. The resonator further comprises a second delay for delaying the further acoustic wave signal, and a second BAW resonator for producing an output electric signal from the delayed further acoustic wave signal. The duplexer can be used in a transceiver in a mobile phone.
摘要:
A component has a piezoelectric layer, which is arranged between a first lower electrode and a first upper electrode and also a second lower electrode and a second upper electrode. The first lower electrode, the first upper electrode, the second lower electrode and the second upper electrode are in each case structured, the structures of the first upper electrode and the structures of the second upper electrode, and the structures of the first lower electrode and the structures of the second lower electrode respectively engaging in one another. The component is suitable as a filter, transformer, and impedance matcher in high-frequency applications.
摘要:
A piezoelectric resonator includes a piezoelectric layer having a first resonance frequency temperature coefficient of a first sign, a first and a second electrode, the piezoelectric layer being arranged between the first and second electrodes, and a compensation layer arranged between the first electrode and the piezoelectric layer, of a compensation material having a second resonance frequency temperature coefficient of a second sign opposite to the first one, wherein the compensation material is provided with a modification material to increase a conductivity of the compensation layer in a direction of the first electrode and the piezoelectric layer.
摘要:
A biochemical semiconductor chip laboratory is disclosed including a coupled address and control chip for biochemical analyses and a method for producing the same. In at least one embodiment the semiconductor chip laboratory has a semiconductor sensor chip, which provides numerous analytical positions for biochemical samples in a matrix. The sensor chip is located on the address and control chip and the analytical positions are in electric contact with a printed contact structure on the upper face of the address and control chip via low-resistance through-platings through the semiconductor substrate of the semiconductor chip.
摘要:
A duplexer for connection with an antenna comprises an antenna port, a transmitting filter comprising bulk acoustic wave (BAW) resonators having a first antenna side impedance coupled with the antenna port, a receiving filter comprising BAW resonators having a second antenna side impedance coupled with the antenna port, and a shunt inductance coupled between the antenna port and ground. The shunt inductance and the first and second antenna side impedances of the transmitting filter and the receiving filter are selected in such a way that the shunt inductance turns the first and second input impedance in a negative direction in a Smith diagram.
摘要:
A BAW resonator includes a resonator region having a piezo-electric layer between two excitation electrodes, wherein an acoustic standing wave forms when operating the BAW resonator at a resonant frequency. Furthermore, the BAW resonator includes a leaky wave reflection structure formed to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave.
摘要:
A description is given of a BAW apparatus having a first BAW resonator and a second BAW resonator which are connected antiparallel to one another so as to reduce non-linear effects, in particular harmonics.
摘要:
A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.
摘要:
In a method for manufacturing a piezoelectric oscillating circuit in thin film technology, wherein the oscillating circuit includes a predetermined natural frequency and a plurality of layers, first of all at least a first layer of the piezoelectric oscillating circuit is generated. Subsequently, by processing the first layer a frequency correction is performed. Subsequently, at least a second layer of the piezoelectric oscillating circuit is generated and processed for performing a second frequency correction.
摘要:
A BAW resonator includes a first piezoelectric layer made of a material oriented toward a first direction, and a second piezoelectric layer made of a material oriented toward a second direction which is opposed to the first direction. The first piezoelectric layer and the second piezoelectric layer are acoustically coupled with each other.