Light emitting device and method of manufacturing the same
    3.
    发明申请
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号:US20070200122A1

    公开(公告)日:2007-08-30

    申请号:US11709197

    申请日:2007-02-22

    CPC分类号: H01L33/08 H01L33/20

    摘要: A light emitting device having improved light extraction efficiency is disclosed. The light emitting device includes a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one groove formed through a portion of the first semiconductor layer, the active layer, and the second semiconductor layer.

    摘要翻译: 公开了一种具有提高光提取效率的发光器件。 发光器件包括依次堆叠的包括第一半导体层,有源层和第二半导体层的氮化物半导体层,通过从第二半导体层进行台面蚀刻,第一半导体层的一部分暴露于外部 层到第一半导体层的部分,以及通过第一半导体层,有源层和第二半导体层的一部分形成的至少一个沟槽。

    Backlight unit having light emitting diodes and method for manufacturing the same
    5.
    发明申请
    Backlight unit having light emitting diodes and method for manufacturing the same 有权
    具有发光二极管的背光单元及其制造方法

    公开(公告)号:US20060268567A1

    公开(公告)日:2006-11-30

    申请号:US11442396

    申请日:2006-05-30

    申请人: Jun Jang Young Yee

    发明人: Jun Jang Young Yee

    IPC分类号: F21V7/04

    摘要: A backlight unit having light emitting diodes and a method for manufacturing the same are disclosed, whereby a hot spot is not generated without recourse to use of a conventional lateral light emitting diode package to enable to improve a picture quality, and the method dispenses with an assembling process of placing a hot spot baffle plate to enable to simplify a manufacturing process of a backlight unit, and to reduce a thickness of the backlight unit.

    摘要翻译: 公开了一种具有发光二极管的背光单元及其制造方法,由此不会产生热点而不需要使用传统的横向发光二极管封装以提高图像质量,并且该方法省略了 放置热点挡板的组装过程能够简化背光单元的制造过程,并且减小背光单元的厚度。

    Nitride semiconductor device and method for fabricating the same
    7.
    发明申请
    Nitride semiconductor device and method for fabricating the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号:US20050258442A1

    公开(公告)日:2005-11-24

    申请号:US11127656

    申请日:2005-05-11

    摘要: The present invention relates to a nitride semiconductor device and a method for fabricating the same. According to the present invention, there is an advantage in that trenches isolating respective nitride semiconductor unit devices from one another are filled with crack-inhibiting walls to remove voids, thereby minimizing cracks or damage that may occur in the nitride semiconductor unit devices during a laser lift-off process. In addition, there is an advantage in that the devices are bonded through a bonding-reinforcing plate or the crack-inhibiting walls to a carrier substrate with a bonding member coated thereon, thereby maintaining a strong bonding force to the carrier substrate.

    摘要翻译: 氮化物半导体器件及其制造方法技术领域本发明涉及一种氮化物半导体器件及其制造方法。 根据本发明,具有以下优点:将各个氮化物半导体单元器件彼此隔离的沟槽填充有裂纹抑制壁以去除空隙,从而最小化激光器内的氮化物半导体单元器件中可能发生的裂纹或损坏 剥离过程。 此外,具有通过粘合增强板或抗裂纹壁将粘合剂粘合到载体基材上的优点,其中涂覆有粘合部件,从而保持对载体基材的强结合力。