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158 条记录 (耗时 0.034 秒)

    Luminosity control system employing semiconductor lasers
    2.
    发明授权
    Luminosity control system employing semiconductor lasers 失效
    使用半导体激光器的荧光灯控制系统

    公开(公告)号：US4038610A

    公开(公告)日：1977-07-26

    申请号：US514286

    申请日：1974-10-11

    申请人： Jun-ichi Nishizawa ,  Ichiemon Sasaki ,  Kaoru Takahashi

    发明人： Jun-ichi Nishizawa ,  Ichiemon Sasaki ,  Kaoru Takahashi

    IPC分类号： H01S5/06 ,  H01S5/40 ,  H01S5/50 ,  H01S3/10

    CPC分类号： H01S5/50 ,  H01S5/4006 ,  H01S5/0608

    摘要： A luminosity control device comprises a first semiconductor laser operable in a spontaneous mode to emit noncoherent light and in a laser mode different from its inherent laser mode to emit coherent light. The first semiconductor laser is electrically biased into its spontaneous laser mode. A second semiconductor laser is operated in a laser mode to emit coherent light which is applied to the first semiconductor laser to optically bias the first semiconductor laser into the laser mode of the second semiconductor laser. The second semiconductor laser is electrically biased into operating in its laser mode and the optical coupling between the two semiconductor lasers is such that the coherent light output from the first semiconductor laser varies exponentially with respect to the electrical energy input into the second semiconductor laser.

    Field effect transistor having saturated drain current characteristic
    3.
    发明授权
    Field effect transistor having saturated drain current characteristic 失效
    具有饱和漏极电流特性的场效应晶体管

    公开(公告)号：US5585654A

    公开(公告)日：1996-12-17

    申请号：US782789

    申请日：1991-10-24

    申请人： Jun-ichi Nishizawa

    发明人： Jun-ichi Nishizawa

    IPC分类号： G11B3/12 ,  H01L29/10 ,  H01L29/772 ,  H01L29/808

    CPC分类号： G11B3/128 ,  H01L29/1066 ,  H01L29/7722

    摘要： A field effect transistor has the property that the product of its series resistance and its true transconductance is less than one throughout the entire range of drain voltage in the operative state of the transistor, the series resistance being the sum of the resistance from source to channel and the resistance of this channel. In order to prevent an excessive increase in the active resistance of the channel, the channel is made to have an impurity concentration as low as less than 10.sup.15 atoms/cm.sup.3, preferably less than 10.sup.14 atoms/cm.sup.3, so that the depletion layers extending from the gates grow extensively to become contiguous in response to a small increase in the reverse gate voltage applied. As a result, the field effect transistor of this invention has an unsaturated drain current versus drain voltage characteristic.

    摘要翻译： 场效应晶体管具有在晶体管的工作状态下，其串联电阻与其真正跨导的乘积在整个漏极电压范围内小于1的特性，串联电阻是源极与沟道之间的电阻之和 和这个渠道的阻力。 为了防止通道的有效电阻的过度增加，使沟道的杂质浓度低至1015原子/ cm3，优选小于1014原子/ cm3，从而从 栅极响应于施加的反向栅极电压的小的增加而广泛地生长以变得连续。 结果，本发明的场效晶体管具有不饱和漏极电流对漏极电压特性。

    Method of and apparatus for epitaxially growing chemical compound crystal
    4.
    发明授权
    Method of and apparatus for epitaxially growing chemical compound crystal 失效
    外延生长化合物晶体的方法和装置

    公开(公告)号：US5463977A

    公开(公告)日：1995-11-07

    申请号：US91747

    申请日：1993-07-15

    申请人： Nobuaki Manada ,  Junji Ito ,  Toru Kurabayashi ,  Jun-ichi Nishizawa

    发明人： Nobuaki Manada ,  Junji Ito ,  Toru Kurabayashi ,  Jun-ichi Nishizawa

    IPC分类号： C30B25/14 ,  C30B25/16 ,  C30B29/42 ,  H01L21/205

    CPC分类号： C23C16/45561 ,  C30B25/14 ,  C30B25/165

    摘要： In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

    摘要翻译： 在用于外延生长化合物晶体的方法和装置中，将多种原料气体交替地引入晶体生长装置的封闭室中以使放置在封闭室内的晶体生长。 在晶体生长时，来自光源的光被发射到晶体的晶体生长膜。 测量从晶体生长膜反射并由光电检测器接收的光的强度。 基于反射光强度的变化，通过控制系统控制各原料气体的电荷量，由此控制生长膜的生长速度。

    Short channel MOSFET with buried anti-punch through region
    5.
    发明授权
    Short channel MOSFET with buried anti-punch through region 失效
    短沟道MOSFET，具有埋入的抗穿通区域

    公开(公告)号：US5384476A

    公开(公告)日：1995-01-24

    申请号：US62333

    申请日：1987-06-09

    申请人： Jun-ichi Nishizawa ,  Tadahiro Ohmi

    发明人： Jun-ichi Nishizawa ,  Tadahiro Ohmi

    IPC分类号： H01L23/556 ,  H01L27/108 ,  H01L29/10 ,  H01L29/49 ,  H01L29/772 ,  H01L29/78

    CPC分类号： H01L29/4966 ,  H01L23/556 ,  H01L27/10808 ,  H01L29/105 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/7722 ,  H01L29/78 ,  H01L2924/0002

    摘要： A semiconductor device having a source region, a drain region and a channel region which are formed in a surface portion of a semiconductor substrate, and a gate formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further include, in the semiconductor substrate to extend along the channel region, a highly-doped region having a conductivity type opposite to that of the source region. This highly-closed region may have an impurity concentration gradient which is greater toward its portion facing the abovesaid surface of the substrate. These arrangements serve to prevent extinction of memory due to current leakage during absence of bias voltage which otherwise would develop in semiconductor devices having short-channel and thin gate oxide layer, and due to irradiation of alpha-particle onto the device.

    摘要翻译： 具有形成在半导体基板的表面部分中的源极区域，漏极区域和沟道区域的半导体器件和形成有相对于源极区域具有相对较高内置电压的材料的栅极。 该半导体器件还可以在半导体衬底中沿沟道区域延伸具有与源极区域相反的导电类型的高掺杂区域。 这个高度封闭的区域可以具有对其面向衬底的上述表面的部分更大的杂质浓度梯度。 这些布置用于防止由于不存在偏置电压时的电流泄漏而导致的存储器的消光，否则将在具有短沟道和薄栅极氧化物层的半导体器件中以及由于α粒子照射到器件上而产生。

    Step cut type insulated gate SIT having low-resistance electrode and method of manufacturing the same
    6.
    发明授权
    Step cut type insulated gate SIT having low-resistance electrode and method of manufacturing the same 失效
    具有低电阻电极的步进式绝缘栅极SIT及其制造方法

    公开(公告)号：US5060029A

    公开(公告)日：1991-10-22

    申请号：US483740

    申请日：1990-02-23

    申请人： Jun-ichi Nishizawa ,  Nobuo Takeda

    发明人： Jun-ichi Nishizawa ,  Nobuo Takeda

    IPC分类号： H01L21/28 ,  H01L21/335 ,  H01L29/49 ,  H01L29/772 ,  H01L29/78

    CPC分类号： H01L29/66416 ,  H01L21/28052 ,  H01L21/2815 ,  H01L29/4933 ,  H01L29/7722 ,  H01L29/7827

    摘要： This invention provides a step cut type insulated gate static induction tsistor having a first main electrode formed in one major surface of a semiconductor substrate, a second main electrode formed in a bottom portion of a U-shaped groove formed in one major surface of a semiconductor substrate, a control electrode formed on a side wall of the U-shaped groove and consisting of a thin insulating film and a polysilicon layer, and a low-resistance electrode of a refractory metal layer or a refractory metal silicide layer formed in at least part of the side wall of the polysilicon layer of the control electrode.

    摘要翻译： 本发明提供了一种具有在半导体衬底的一个主表面上形成的第一主电极的切割型绝缘栅静电感应晶体管，形成在半导体的一个主表面上的U形槽的底部的第二主电极 基板，形成在U形槽的侧壁上并由薄绝缘膜和多晶硅层构成的控制电极以及难熔金属层或难熔金属硅化物层的低电阻电极，其形成在至少部分 的控制电极的多晶硅层的侧壁。

    Semiconductor switching device
    9.
    发明授权
    Semiconductor switching device 失效
    半导体开关装置

    公开(公告)号：US4985738A

    公开(公告)日：1991-01-15

    申请号：US939259

    申请日：1986-12-05

    申请人： Jun-ichi Nishizawa ,  Tadahiro Ohmi

    发明人： Jun-ichi Nishizawa ,  Tadahiro Ohmi

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7392

    摘要： A semiconductor thyristor of the Static Induction type having a split-gate structure, e.g., driving gates and non-driving gates, for controlling cathode-anode current flow. The split-gate structure comprises a plurality of primary gates formed in recesses of the channel region which respond to an external control signal for providing primary current control, and a plurality of secondary non-driving gates which are influenced by electric fields in the channel region extant during thyristor operation for providing secondary current control. In operation, the driving and non-driving gates coact so that the non-driving gates, having an induced potential lower than the potential applied to the driving gates, absorb charge carriers injected in the channel during thyristor operation. The relative disposition of the non-driving gates and the anode, as well as the respective doping concentrations of the anode and channel regions, enable the non-driving gates to absorb a substantial portion of charge carriers injected from the anode into the channel during high-power operation. Fast turn-on and turn-off is achieved by exclusion of the non-driving gate capacitance in the driving gate circuit.

    摘要翻译： 具有用于控制阴极 - 阳极电流的具有分离栅极结构（例如驱动栅极和非驱动栅极）的静态感应型的半导体晶闸管。 分离栅极结构包括形成在沟道区的凹部中的多个主栅极，其响应于用于提供初级电流控制的外部控制信号，以及受到沟道区域中的电场影响的多个次级非驱动栅极 在晶闸管操作期间提供二次电流控制。 在操作中，驱动和非驱动栅极共同作用，使得具有低于施加到驱动栅极的电位的感应电位的非驱动栅极在晶闸管操作期间吸收在沟道中注入的电荷载流子。 非驱动栅极和阳极的相对配置以及阳极和沟道区域的各自的掺杂浓度使得非驱动栅极能够在高的期间吸收从阳极注入到沟道中的大部分电荷载流子 电力操作。 通过排除驱动门电路中的非驱动栅极电容来实现快速导通和关断。