-
公开(公告)号：US20120088151A1
公开(公告)日：2012-04-12
申请号：US13242135
申请日：2011-09-23
CPC分类号： H01M4/5825 , B82Y30/00 , H01M4/131 , H01M4/133 , H01M4/364 , H01M4/587 , H01M4/625 , H01M10/052 , H01M2220/30 , Y02T10/7011
摘要： A positive-electrode active material with improved electrical conductivity, and a power storage device using the material are provided. A positive-electrode active material with large capacity, and a power storage device using the material are provided. A core including lithium metal oxide is used as a core of a main material of the positive-electrode active material, and one to ten pieces of graphene is used as a covering layer for the core. A hole is provided for graphene, whereby transmission of a lithium ion is facilitated, resulting in improvement of use efficiency of current.
摘要翻译： 提供导电性提高的正极活性物质和使用该材料的蓄电装置。 提供具有大容量的正极活性物质和使用该材料的蓄电装置。 使用包含锂金属氧化物的芯作为正极活性材料的主要材料的芯，并且使用一至十个石墨烯作为芯的覆盖层。 为石墨烯提供了一个孔，从而促进了锂离子的传输，从而提高了电流的使用效率。
-
2.发明授权Lithium-ion secondary battery with graphene and composite oxide layered electrode 有权具有石墨烯和复合氧化物层状电极的锂离子二次电池公开(公告)号：US09059478B2
公开(公告)日：2015-06-16
申请号：US13425576
申请日：2012-03-21
CPC分类号： H01M4/366 , H01M4/131 , H01M4/133 , H01M4/136 , H01M4/485 , H01M4/5825 , H01M4/587 , H01M4/62 , H01M4/621 , H01M10/0525 , H01M2004/028 , Y02E60/122 , Y02P70/54 , Y02T10/7011
摘要： To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.
摘要翻译： 提供具有较高放电容量和较高能量密度的锂离子二次电池及其制造方法。 锂离子二次电池包括正极，负极和设置在正极和负极之间的电解质。 正极包括设置在正极集电体上的正极集电体和正极活性物质层。 在正极活性物质层中交替设置石墨烯和含锂复合氧化物。 所述含锂复合氧化物是b轴方向的长度短于a轴方向和c轴方向的长度的平坦的单晶粒子。 此外，在正极集电体上设置含锂复合氧化物，使得单晶粒子的b轴与正极集电体的表面相交。
-
公开(公告)号：US20120244430A1
公开(公告)日：2012-09-27
申请号：US13425576
申请日：2012-03-21
CPC分类号： H01M4/366 , H01M4/131 , H01M4/133 , H01M4/136 , H01M4/485 , H01M4/5825 , H01M4/587 , H01M4/62 , H01M4/621 , H01M10/0525 , H01M2004/028 , Y02E60/122 , Y02P70/54 , Y02T10/7011
摘要： To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector.
摘要翻译： 提供具有较高放电容量和较高能量密度的锂离子二次电池及其制造方法。 锂离子二次电池包括正极，负极和设置在正极和负极之间的电解质。 正极包括设置在正极集电体上的正极集电体和正极活性物质层。 在正极活性物质层中交替设置石墨烯和含锂复合氧化物。 所述含锂复合氧化物是b轴方向的长度短于a轴方向和c轴方向的长度的平坦的单晶粒子。 此外，在正极集电体上设置含锂复合氧化物，使得单晶粒子的b轴与正极集电体的表面相交。
-
4.发明授权公开(公告)号：US10141120B2
公开(公告)日：2018-11-27
申请号：US13033877
申请日：2011-02-24
IPC分类号： H01M6/04 , H01G11/26 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01G11/28 , H01G11/32 , H01M4/02
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.
-
公开(公告)号：US08940610B2
公开(公告)日：2015-01-27
申请号：US13085234
申请日：2011-04-12
IPC分类号： H01L21/331 , H01L21/02 , H01L29/04
CPC分类号： H01L29/045 , H01L21/02532 , H01L21/0262 , H01L21/02672 , Y02E60/122 , Y02P70/54
摘要： An electrode for an energy storage device with less deterioration due to charge and discharge, and a method for manufacturing thereof are provided. Further, an energy storage device having large capacity and high endurance can be provided. In an electrode of an energy storage device in which an active material is formed over a current collector, the surface of the active material is formed of a crystalline semiconductor film having a {110} crystal plane. The crystalline semiconductor film having a {110} crystal plane may be a crystalline silicon film containing a metal element which reacts with silicon to form a silicide. Alternatively, the crystalline semiconductor film having a {110} crystal plane may be a crystalline semiconductor film containing silicon as its main component and also containing germanium and a metal element which reacts with silicon to form a silicide.
摘要翻译： 提供了一种用于由于充放电而劣化较少的储能装置的电极及其制造方法。 此外，可以提供具有大容量和高耐久性的能量存储装置。 在其中在集电体上形成活性物质的能量存储装置的电极中，活性物质的表面由具有{110}晶面的结晶半导体膜形成。 具有{110}晶面的结晶半导体膜可以是含有与硅反应形成硅化物的金属元素的结晶硅膜。 或者，具有{110}晶面的结晶半导体膜可以是含有硅作为其主要成分并且还含有锗和与硅反应形成硅化物的金属元素的结晶半导体膜。
-
公开(公告)号：US08492758B2
公开(公告)日：2013-07-23
申请号：US12887646
申请日：2010-09-22
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L21/2636 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/12 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
-
公开(公告)号：US08637866B2
公开(公告)日：2014-01-28
申请号：US12490447
申请日：2009-06-24
申请人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
发明人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
IPC分类号： H01L29/72
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
摘要翻译： 至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。
-
8.发明授权公开(公告)号：US08329520B2
公开(公告)日：2012-12-11
申请号：US12750739
申请日：2010-03-31
IPC分类号： H01L21/84
CPC分类号： H01L27/1251 , H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L27/1281
摘要： An island-shaped single crystal semiconductor layer whose top surface has a plane within ±10° from a {211} plane is formed on an insulating surface; a non-single-crystal semiconductor layer is formed in contact with the top surface and a side surface of the single crystal semiconductor layer and on the insulating surface; the non-single-crystal semiconductor layer is irradiated with laser light to melt the non-single-crystal semiconductor layer, and to crystallize the non-single-crystal semiconductor layer formed on the insulating surface with use of the single crystal semiconductor layer as a seed crystal, so that a crystalline semiconductor layer is formed. A semiconductor device having an n-channel transistor and a p-channel transistor formed with use of the crystalline semiconductor layer is provided.
摘要翻译： 在绝缘面上形成顶面与{211}面成±10°以内的岛状单晶半导体层， 形成与单晶半导体层的顶表面和侧表面以及绝缘表面接触的非单晶半导体层; 用激光照射非单晶半导体层以熔化非单晶半导体层，并且使用单晶半导体层将形成在绝缘表面上的非单晶半导体层结晶为 晶种，从而形成结晶半导体层。 提供了具有使用晶体半导体层形成的n沟道晶体管和p沟道晶体管的半导体器件。
-
公开(公告)号：US08309961B2
公开(公告)日：2012-11-13
申请号：US12897419
申请日：2010-10-04
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/045 , H01L29/45 , H01L29/78606 , H01L29/78696
摘要： In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.
摘要翻译： 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。
-
公开(公告)号：US08124972B2
公开(公告)日：2012-02-28
申请号：US12429486
申请日：2009-04-24
申请人： Koji Dairiki , Hidekazu Miyairi , Toshiyuki Isa , Akiharu Miyanaga , Takuya Hirohashi , Shunpei Yamazaki , Takeyoshi Watabe
发明人： Koji Dairiki , Hidekazu Miyairi , Toshiyuki Isa , Akiharu Miyanaga , Takuya Hirohashi , Shunpei Yamazaki , Takeyoshi Watabe
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01J37/32091 , H01L27/1214 , H01L27/1218 , H01L27/1288 , H01L29/04 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer.
摘要翻译： 薄膜晶体管包括覆盖栅电极的栅极绝缘层，在具有绝缘表面的基板上; 形成在非晶结构中包含多个晶体区域的沟道形成区域的半导体层; 赋予形成源极区域和漏极区域的一种导电型的杂质半导体层; 以及由位于半导体层和杂质半导体层之间的非晶半导体形成的缓冲层。 薄膜晶体管包括晶体区域，其包括微小晶粒和倒锥形或倒棱锥晶粒，其每一个从远离栅极绝缘层和半导体层之间的界面的位置朝向半导体层的方向大致径向地生长 沉积在不到达杂质半导体层的区域中。
-
-
-
-
-
-
-
-
-
搜索结果
5368 条记录 (耗时 0.041 秒)
