摘要:
The present invention provides a substrate processing apparatus having a drying mechanism for removing water from the surface of a substrate which has been cleaned by a wet cleaning process, and a substrate processing apparatus and a substrate processing method which are capable of efficiently removing an unnecessary thin film deposited on or adhering to a bevel or edge portion of a substrate. The substrate processing apparatus of this invention has a substrate holder for holding a substrate, and a dry gas supply section for turning an atmosphere to which at least a portion of a surface of the substrate held by the substrate holder is exposed into a humidity-controlled dry gas atmosphere.
摘要:
The present invention relates to a cleaning apparatus which can reduce a potential difference between metals or alloys used to form interconnects on a substrate for thereby minimizing corrosion which may occur during and after a substrate cleaning process. The cleaning apparatus for cleaning a substrate having metal interconnects comprises a cleaning mechanism for cleaning the substrate, and a functional water supply mechanism for supplying functional water to the cleaning mechanism. The cleaning mechanism cleans a surface of the substrate with use of the functional water.
摘要:
An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.
摘要:
A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of rotation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member. The holding members revolve around the axis of rotation when the rotatable member rotates and are allowed to swing about their own central axes.
摘要:
The substrate processing apparatus has substrate holding mechanisms (14) for holding the substrate (W) under a holding force which is changed according to a rotational speed of the substrate holding mechanisms (14), a substrate rotation mechanism (22) for rotating the substrate holding mechanisms (14) to rotate the substrate (W) held by the substrate holding mechanisms (14), and a treatment liquid supply mechanism (12, 15, 19) for supplying a treatment liquid to a desired portion of the substrate (W) held by the substrate holding mechanisms (14).
摘要:
A substrate processing apparatus and a substrate processing method is provided for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. A substrate holding apparatus is provided for holding and rotating a substrate. The substrate processing apparatus for processing a substrate while supplying a fluid to the substrate includes a substrate holder for holding and rotating the substrate, and a holder suction unit for sucking the fluid from the substrate holder. The substrate holding apparatus includes a plurality of rollers which are brought into contact with an edge portion of a substrate so as to hold and rotate the substrate, and at least one moving mechanism for moving the rollers.
摘要:
A heat treatment apparatus for semiconductor wafers includes a reaction chamber, a heater, a heat-insulating member, a first cooling gas path, a second cooling gas path, a blower and a controller. The reaction chamber houses semiconductor wafers. The heater is provided outside the reaction chamber to heat it. The heat-insulating member is provided outside the heater to keep the temperature of the reaction chamber. The first cooling gas path is interposed between the reaction chamber and heater, while the second cooling gas path is disposed between the heater and heat-insulating member. The blower allows gas to flow through the first and second gas paths to cool the reaction chamber. The controller controls the heater to increase the temperature of the reaction chamber and does the blower to decrease the temperature thereof.
摘要:
A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of rotation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.
摘要:
A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of rotation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.
摘要:
An acid solution is continuously supplied to a central portion of a surface of a substrate while the substrate is rotating, and an oxidizing agent solution is continuously or intermittently supplied to a periphery of the substrate. In addition, an oxidizing agent solution and an acid solution are simultaneously or alternately supplied to a reverse side of the substrate.