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    Semiconductor device with gate insulator formed of high dielectric film
    1.
    发明授权
    Semiconductor device with gate insulator formed of high dielectric film 失效
    具有栅极绝缘体的半导体器件由高介电膜形成

    公开(公告)号：US06278164B1

    公开(公告)日：2001-08-21

    申请号：US08996704

    申请日：1997-12-23

    申请人： Katsuhiko Hieda ,  Yoshitaka Tsunashima ,  Keitaro Imai ,  Tomonori Aoyama

    发明人： Katsuhiko Hieda ,  Yoshitaka Tsunashima ,  Keitaro Imai ,  Tomonori Aoyama

    IPC分类号： H01L2976

    CPC分类号： H01L29/513 ,  H01L29/4983 ,  H01L29/516 ,  H01L29/517 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/78391

    摘要： A p-type silicon substrate has an element isolation region of an STI structure formed therein. A transistor region isolated by the isolation region has a n-type source/drain diffusion layer. Further, a p-channel impurity layer is formed substantially only in its channel region for controlling its threshold voltage (Vth). A gate insulator film consisting of a high dielectric film is formed on the channel region with an Si3N4 film interposed therebetween. A metal gate electrode having its bottom and side surfaces covered with the gate insulator film is provided in a self-alignment manner with respect to the source/drain diffusion layer.

    摘要翻译： p型硅衬底具有形成在其中的STI结构的元件隔离区域。 由隔离区隔离的晶体管区域具有n型源极/漏极扩散层。 此外，p沟道杂质层基本上仅在其沟道区域中形成，用于控制其阈值电压（Vth）。 在沟道区域上形成由高介电膜构成的栅极绝缘膜，其间插入有Si 3 N 4膜。 相对于源极/漏极扩散层以自对准的方式设置具有被栅极绝缘膜覆盖的底部和侧面的金属栅电极。

    Semiconductor device and method of manufacturing the same
    2.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06278152B1

    公开(公告)日：2001-08-21

    申请号：US09105030

    申请日：1998-06-25

    申请人： Katsuhiko Hieda ,  Kazuhiro Eguchi ,  Keitaro Imai ,  Tomonori Aoyama

    发明人： Katsuhiko Hieda ,  Kazuhiro Eguchi ,  Keitaro Imai ,  Tomonori Aoyama

    IPC分类号： H01L2900

    CPC分类号： H01L28/75 ,  H01L21/76877 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/55

    摘要： A semiconductor device comprises a first lower capacitor electrode composed of a first conductive film, a second lower capacitor electrode composed of a second conductive film which covers at least the side face of the first lower capacitor electrode at its top face, a capacitor insulating film provided on the second lower capacitor electrode, and an upper capacitor electrode provided on the capacitor insulating film, wherein film stress in the first conductive film is lower than that in the second conductive film and the volume of the first conductive film is larger than that of the second conductive film. The above-described structure reduces leakage current in the capacitor.

    摘要翻译： 半导体器件包括由第一导电膜构成的第一下电容器电极和由其顶面至少覆盖第一下电容电极的侧面的第二导电膜构成的第二下电容电极，设置有电容器绝缘膜 在第二低电容电极和第二导电膜上设置的上电容器电极，其中第一导电膜中的膜应力低于第二导电膜的膜应力，第一导电膜的体积大于第二导电膜的体积 第二导电膜。 上述结构减小了电容器中的漏电流。

    Method of making a semiconductor device with capacitor
    3.
    发明授权
    Method of making a semiconductor device with capacitor 失效
    制造具有电容器的半导体器件的方法

    公开(公告)号：US6156599A

    公开(公告)日：2000-12-05

    申请号：US189943

    申请日：1998-11-12

    申请人： Tomonori Aoyama ,  Keitaro Imai

    发明人： Tomonori Aoyama ,  Keitaro Imai

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/8244

    CPC分类号： H01L27/10852 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002

    摘要： A semiconductor device comprising a semiconductor substrate and a capacitor formed on the semiconductor substrate, wherein the capacitor is formed of a multilayer comprising a first electrode disposed close to the semiconductor substrate, a second electrode disposed remote from the semiconductor substrate and a dielectric film formed of a metal oxide and interposed between the first electrode and the second electrode, and at least either one of the first and second electrodes contains oxygen and is constituted by an element selected from either one of Group 7A and Group 8 elements belonging to either one of the fifth and sixth periods of Periodic Table, the content of oxygen being in a range of 0.004 to 5 atom. %.

    摘要翻译： 一种半导体器件，包括形成在半导体衬底上的半导体衬底和电容器，其中电容器由包括靠近半导体衬底设置的第一电极的多层构成，远离半导体衬底设置的第二电极和由 金属氧化物并且介于第一电极和第二电极之间，并且第一和第二电极中的至少一个包含氧，并且由选自以下的任何一个的7A和8族元素中的任一个组成： 第五和第六周期的周期表，氧的含量在0.004至5原子的范围内。 ％。

    Semiconductor device with capacitor
    4.
    发明授权
    Semiconductor device with capacitor 失效
    带电容器的半导体器件

    公开(公告)号：US5852307A

    公开(公告)日：1998-12-22

    申请号：US681537

    申请日：1996-07-23

    申请人： Tomonori Aoyama ,  Keitaro Imai

    发明人： Tomonori Aoyama ,  Keitaro Imai

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

    CPC分类号： H01L27/10852 ,  H01L28/55 ,  H01L28/60 ,  H01L2924/0002

    摘要： A semiconductor device comprising a semiconductor substrate and a capacitor formed on the semiconductor substrate, wherein the capacitor is formed of a multilayer comprising a first electrode disposed close to the semiconductor substrate, a second electrode disposed remote from the semiconductor substrate and a dielectric film formed of a metal oxide and interposed between the first electrode and the second electrode, and at least either one of the first and second electrodes contains oxygen and is constituted by an element selected from either one of Group 7A and Group 8 elements belonging to either one of the fifth and sixth periods of Periodic Table, the content of oxygen being in a range of 0.004 to 5 atom.%.

    摘要翻译： 一种半导体器件，包括形成在半导体衬底上的半导体衬底和电容器，其中电容器由包括靠近半导体衬底设置的第一电极的多层构成，远离半导体衬底设置的第二电极和由 金属氧化物并且介于第一电极和第二电极之间，并且第一和第二电极中的至少一个包含氧，并且由选自以下的任何一个的7A和8族元素中的任一个组成： 第五和第六周期的周期表，氧的含量在0.004至5原子％的范围内。

    Semiconductor device and method of manufacturing the same
    7.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08828853B2

    公开(公告)日：2014-09-09

    申请号：US13415232

    申请日：2012-03-08

    申请人： Tomonori Aoyama ,  Kiyotaka Miyano

    发明人： Tomonori Aoyama ,  Kiyotaka Miyano

    IPC分类号： H01L21/20

    CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/78696 ,  H01L29/7926

    摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming an amorphous semiconductor film on a substrate. The method further includes annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film. The method further includes forming a transistor whose channel is the polycrystalline semiconductor film.

    摘要翻译： 在一个实施例中，制造半导体器件的方法包括在衬底上形成非晶半导体膜。 该方法还包括通过用微波照射衬底来从非晶半导体膜形成多晶半导体膜来退火非晶半导体膜。 该方法还包括形成其通道为多晶半导体膜的晶体管。

    Semiconductor device and method of manufacturing the same
    9.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US08198155B2

    公开(公告)日：2012-06-12

    申请号：US12693985

    申请日：2010-01-26

    申请人： Daisuke Ikeno ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

    发明人： Daisuke Ikeno ,  Tomonori Aoyama ,  Kazuaki Nakajima ,  Seiji Inumiya ,  Takashi Shimizu ,  Takuya Kobayashi

    IPC分类号： H01L21/8234 ,  H01L21/8238 ,  H01L29/51

    CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/823807 ,  H01L21/82385 ,  H01L29/1054 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659

    摘要： A semiconductor device according to an embodiment of the present invention includes an N-type transistor formed in a first region on a substrate, and a P-type transistor formed in a second region on the substrate. The device includes the substrate, a first gate insulation film formed on the substrate in the first and second regions, and containing silicon, a second gate insulation film formed on the first gate insulation film in the first region, and containing first metal and oxygen, a third gate insulation film formed on the first gate insulation film in the second region, and containing second metal different from the first metal and oxygen, a fourth gate insulation film formed on the second and third gate insulation films in the first and second regions, and containing hafnium, and a gate electrode layer formed on the fourth gate insulation film in the first and second regions, and containing metal and nitrogen, a thickness of the gate electrode layer formed in the second region being greater than a thickness of the gate electrode layer formed in the first region.

    摘要翻译： 根据本发明的实施例的半导体器件包括形成在衬底上的第一区域中的N型晶体管和形成在衬底上的第二区域中的P型晶体管。 该器件包括衬底，形成在第一和第二区域的衬底上并含有硅的第一栅极绝缘膜，形成在第一区域中的第一栅极绝缘膜上并且包含第一金属和氧的第二栅极绝缘膜， 形成在所述第二区域中的所述第一栅极绝缘膜上并且包含不同于所述第一金属和氧的第二金属的第三栅极绝缘膜，形成在所述第一和第二区域中的所述第二和第三栅极绝缘膜上的第四栅极绝缘膜， 并且含有铪，以及形成在第一和第二区域中的第四栅极绝缘膜上并且包含金属和氮的栅极电极层，在第二区域中形成的栅电极层的厚度大于栅电极的厚度 层形成在第一区域中。

    Semiconductor device having a high-dielectric-constant gate insulating film
    10.
    发明授权
    Semiconductor device having a high-dielectric-constant gate insulating film 失效
    具有高介电常数栅极绝缘膜的半导体器件

    公开(公告)号：US08143676B2

    公开(公告)日：2012-03-27

    申请号：US12261770

    申请日：2008-10-30

    申请人： Seiji Inumiya ,  Takuya Kobayashi ,  Tomonori Aoyama

    发明人： Seiji Inumiya ,  Takuya Kobayashi ,  Tomonori Aoyama

    IPC分类号： H01L21/02

    CPC分类号： H01L21/823857 ,  H01L21/02148 ,  H01L21/02156 ,  H01L21/02161 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/31645

    摘要： A semiconductor device includes a substrate having first and second regions on a surface thereof, a first conductivity type first MISFET formed in the first region and a second conductivity type second MISFET formed in the second region. The first MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate and a first insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film and which has a first element forming electric dipoles that reduce a threshold voltage of the first MISFET and the second MISFET includes a silicon oxide film or a silicon oxynitride film formed on the surface of the substrate, and a second insulating film which is formed in contact with the silicon oxide film or the silicon oxynitride film formed on the surface of the substrate and which has a second element forming electric dipoles in a direction opposite to that in the first MISFET.

    摘要翻译： 半导体器件包括在其表面上具有第一和第二区域的衬底，在第一区域中形成的第一导电类型的第一MISFET和形成在第二区域中的第二导电类型的第二MISFET。 第一MISFET包括在基板的表面上形成的氧化硅膜或氮氧化硅膜，以及形成为与氧化硅膜或氮氧化硅膜接触形成的第一元件的第一绝缘膜，其具有形成电偶极子的第一元件， 降低第一MISFET的阈值电压，并且第二MISFET包括在衬底的表面上形成的氧化硅膜或氧氮化硅膜，以及形成为与氧化硅膜或氮氧化硅膜接触的第二绝缘膜 形成在基板的表面上，并且具有在与第一MISFET中的方向相反的方向上形成电偶极子的第二元件。