公开(公告)号：US5423284A

公开(公告)日：1995-06-13

申请号：US209485

申请日：1994-03-14

申请人： Kohsuke Nishimura ,  Kazuo Sakai ,  Yasuyuki Nagao

发明人： Kohsuke Nishimura ,  Kazuo Sakai ,  Yasuyuki Nagao

IPC分类号： H01L21/365 ,  C30B25/02 ,  C30B25/14 ,  H01L33/28 ,  H01L33/30 ,  C30B25/04

CPC分类号： C30B25/02 ,  C30B29/48

摘要： A method which permits the growth of high-quality crystals of n-type II-VI compound semiconductors containing sulfur, by suppressing the reaction of a group III or VII element as a dopant with a group II material at low temperature. A raw material gas containing an organometallic material of the group III or organic material of the group VII is premixed with a raw material gas containing organic sulfur material, then the premixture is mixed with a raw material gas containing an organometallic material of the group II, and the mixture is used to grow a crystal of an n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method.

摘要翻译： 通过抑制III族或VII族元素作为掺杂剂与II族材料在低温下的反应，允许生长含有硫的n型II-VI化合物半导体的高质量晶体的方法。 将含有III族有机金属材料或VII族有机材料的原料气体与含有机硫材料的原料气体预混合，然后将预混合物与含有II族有机金属材料的原料气体混合， 并且通过金属有机气相外延生长法将混合物用于在半导体衬底上生长n型II-VI化合物半导体的晶体。

公开(公告)号：US5450813A

公开(公告)日：1995-09-19

申请号：US205953

申请日：1994-03-03

申请人： Kohsuke Nishimura ,  Yasuyuki Nagao ,  Kazuo Sakai

发明人： Kohsuke Nishimura ,  Yasuyuki Nagao ,  Kazuo Sakai

IPC分类号： C30B23/08 ,  C30B25/02 ,  C30B29/48 ,  H01L21/205 ,  H01L21/363 ,  H01L21/365 ,  H01L33/28 ,  C30B23/06

CPC分类号： C30B25/02 ,  C30B29/48 ,  Y10T117/10 ,  Y10T117/1016

摘要： Nitrogen-doped group II-VI compound semiconductor thin film manufacturing method and apparatus which are applicable to an MOVPE process. The group II-VI compound semiconductor thin film manufacturing method according to the present invention is characterized by the use of osmium as a catalyst to activate nitrogen molecules. The growth device according to the present invention has a construction wherein a nitrogen gas introducing pipe for blowing a nitrogen gas against a semiconductor substrate is disposed in a reaction chamber for growing the group II-VI compound semiconductor thin film by the MOVPE process and the osmium is disposed between the semiconductor substrate and the nitrogen gas introducing pipe.

摘要翻译： 适用于MOVPE工艺的氮掺杂基团II-VI化合物半导体薄膜制造方法和装置。 根据本发明的II-VI族化合物半导体薄膜制造方法的特征在于使用锇作为催化剂活化氮分子。 根据本发明的生长装置具有这样的结构，其中用于将氮气吹向半导体衬底的氮气引入管设置在用于通过MOVPE工艺生长II-VI族化合物半导体薄膜的反应室中，并且锇 设置在半导体衬底和氮气引入管之间。

公开(公告)号：US5010376A

公开(公告)日：1991-04-23

申请号：US560692

申请日：1990-07-31

申请人： Kohsuke Nishimura ,  Kazuo Sakai

发明人： Kohsuke Nishimura ,  Kazuo Sakai

IPC分类号： H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01L33/44 ,  H01S5/00 ,  H01S5/02 ,  H01S5/32 ,  H01S5/327 ,  H01S5/347

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/06 ,  H01S5/327 ,  H01S5/347 ,  H01S5/0211 ,  H01S5/0218 ,  H01S5/3201

摘要： A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer (3), deposited on a substrate (1). The substrate (1) is made of GaAs, InP, GaAsP or Ge. Said active layer (3) and said clad layers (2, 4) are made of II-VI group compound semiconductor which is lattice-matched with the substrate at both room temperature and growing temperature, for instance 500.degree. C. Said II-VI group compound semiconductor has the same linear thermal expansion coefficient as that of the substrate. The linear thermal expansion coefficient of the II-IV group compound semiconductor is adjusted by additive of Cd, Mg or Hg.

摘要翻译： 发射蓝色和/或绿色光的发光半导体器件具有活性层和夹在活性层（3）上的一对包覆层，沉积在衬底（1）上。 衬底（1）由GaAs，InP，GaAsP或Ge制成。 所述有源层（3）和所述覆盖层（2,4）由在室温和生长温度例如500℃下与衬底晶格匹配的II-VI族化合物半导体制成。所述II-VI 基团化合物半导体具有与基板相同的线性热膨胀系数。 通过添加Cd，Mg或Hg调节II-IV族化合物半导体的线性热膨胀系数。

公开(公告)号：US4992837A

公开(公告)日：1991-02-12

申请号：US432641

申请日：1989-11-07

申请人： Kazuo Sakai ,  Yukitoshi Kushiro ,  Kohsuke Nishimura

发明人： Kazuo Sakai ,  Yukitoshi Kushiro ,  Kohsuke Nishimura

IPC分类号： H01L33/06 ,  H01L33/26 ,  H01L33/28 ,  H01S5/02 ,  H01S5/22 ,  H01S5/32 ,  H01S5/327 ,  H01S5/34 ,  H01S5/347

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/26 ,  H01S5/32 ,  H01S5/34 ,  H01S5/021 ,  H01S5/22 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/322 ,  H01S5/327 ,  H01S5/3422 ,  H01S5/3428 ,  H01S5/347

摘要： A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer, and which are deposited on a semiconductor substrate. The substrate is made of one of GaAs, GaP, InP, Si, Ge, ZnSe and mixed crystals of GaAsP. The active layer is made of at least one of II-VI group compound semiconductor, I-III-VI.sub.2 group compound semiconductor, and II-IV-V.sub.2 group compound semiconductor. The clad layer is made of II-transition metal-VI group compound semiconductor, which is lattice-matched to the active layer.

摘要翻译： 发射蓝色和/或绿色光的发光半导体器件具有活性层和一对夹层有源层并且沉积在半导体衬底上的包层。 衬底由GaAs，GaP，InP，Si，Ge，ZnSe和GaAsP的混晶中的一种制成。 有源层由II-VI族化合物半导体，I-III-VI2族化合物半导体和II-IV-V2族化合物半导体中的至少一种制成。 包层由与活性层晶格匹配的II-过渡金属-VI族化合物半导体制成。

公开(公告)号：US5315422A

公开(公告)日：1994-05-24

申请号：US22016

申请日：1993-02-24

申请人： Katsuyuki Utaka ,  Yasuyuki Nagao ,  Yuichi Matsushima ,  Kazuo Sakai

发明人： Katsuyuki Utaka ,  Yasuyuki Nagao ,  Yuichi Matsushima ,  Kazuo Sakai

IPC分类号： G02F1/017 ,  G02F1/225 ,  G02F1/35 ,  G02F1/355 ,  G02F3/00 ,  G02B6/10 ,  G02B26/00

CPC分类号： B82Y20/00 ,  G02F1/3517 ,  G02F3/00 ,  G02F1/017 ,  G02F1/225 ,  G02F1/3556

摘要： An optical logic element is disclosed which performs an XOR operation through utilization of the high-speed property of light. On each branched waveguide of a Mach-Zehnder interference type optical waveguide there is provided a phase modulating element whose refractive index undergoes a change when it is irradiated by light. The interference type optical waveguide is adapted to provide different optical output levels when the refractive index changes of the phase modulating elements are both zero or a predetermined value and when they differ from each other. Thus, the optical logic element is capable of performing the XOR or XNOR operation at an ultrahigh speed.

摘要翻译： 公开了一种光逻辑元件，其通过利用光的高速特性来执行异或运算。 在马赫曾德尔干涉型光波导的每个分支波导上，提供了一种相位调制元件，其在被光照射时其折射率发生变化。 干涉型光波导适合于当相位调制元件的折射率变化为零或预定值并且当它们彼此不同时，提供不同的光输出电平。 因此，光逻辑元件能够以超高速执行XOR或XOR运算。

公开(公告)号：US20110065749A1

公开(公告)日：2011-03-17

申请号：US12992681

申请日：2009-06-02

申请人： Kazuo Sakai

发明人： Kazuo Sakai

IPC分类号： A61K31/445 ,  A61K31/4453 ,  A61P25/24 ,  A61P25/18 ,  A61P25/22 ,  A61P25/28 ,  A61P25/32

CPC分类号： A61K31/445 ,  A61K31/4453 ,  A61K45/06 ,  C07D295/08 ,  A61K2300/00

摘要： A method of treating a mental disorder including administering to a patient in need thereof, an effective amount of a pharmaceutical composition including 1,1-diphenyl-4-piperidine-1-ylbuthan-1-ol or a pharmaceutically acceptable salt thereof. The mental disorder is depression, bipolar disorder, anxiety disorder, impulsive disorder, bulimia, panic disorder, social anxiety disorder, insomnia, attention deficit hyperactivity disorder (ADHD), schizophrenia, dementia, personality disorder, alcoholism, dissociative disorder, sleep apnea syndrome, or fibromyalgia. In a preferred embodiment, the mental disorder as a therapeutic target is fibromyalgia, chronic fatigue syndrome (CFS), or depression with pain, and the administration of the pharmaceutical composition is capable of reducing the pain caused by these diseases.

摘要翻译： 一种治疗精神障碍的方法，包括向有需要的患者施用有效量的包含1,1-二苯基-4-哌啶-1-基戊烷-1-醇或其药学上可接受的盐的药物组合物。 精神障碍是抑郁症，双相情感障碍，焦虑症，冲动性疾病，贪食症，惊恐障碍，社会焦虑症，失眠症，注意力缺陷多动障碍（ADHD），精神分裂症，痴呆，人格障碍，酒精中毒，解离障碍，睡眠呼吸暂停综合征， 或纤维肌痛。 在优选的实施方案中，作为治疗靶标的精神障碍是纤维肌痛，慢性疲劳综合征（CFS）或具有疼痛的抑郁症，并且药物组合物的施用能够减少由这些疾病引起的疼痛。

公开(公告)号：US20090203738A1

公开(公告)日：2009-08-13

申请号：US11992426

申请日：2006-09-22

申请人： Kazuo Sakai

发明人： Kazuo Sakai

IPC分类号： A61K31/4353 ,  A61K31/135

CPC分类号： A61K45/06 ,  A61K31/135 ,  A61K31/27 ,  A61K31/407 ,  A61K31/445 ,  A61K31/473 ,  A61K31/553 ,  A61K31/662

摘要： Provided is a pharmaceutical composition for the treatment of bulimia in which a cholinesterase inhibitor is combined with at least one member selected from the group consisting of sibutramine, a pharmacologically acceptable salt thereof, an active metabolite thereof, a prodrug thereof and a solvate thereof. The pharmaceutical composition is useful in treating bulimia and depression arising from bulimia.

摘要翻译： 本发明提供一种用于治疗贪食症的药物组合物，其中胆碱酯酶抑制剂与选自西布曲明，其药理学上可接受的盐，其活性代谢物，其前药及其溶剂合物中的至少一种组合。 药物组合物可用于治疗由食欲过盛引起的贪食症和抑郁症。

公开(公告)号：US20070053976A1

公开(公告)日：2007-03-08

申请号：US11523803

申请日：2006-09-20

申请人： Kazuo Sakai ,  John Ieni ,  Raymond Pratt

发明人： Kazuo Sakai ,  John Ieni ,  Raymond Pratt

IPC分类号： A61K31/165 ,  A61K31/137 ,  A61K31/381 ,  A61K31/405 ,  A61K9/20

CPC分类号： A61K45/06 ,  A61K31/137 ,  A61K31/165 ,  A61K31/381 ,  A61K31/405 ,  A61K2300/00

摘要： A novel antidepressant composition of a cholinesterase inhibitor in combination with a selective serotonin reuptake inhibitor, milnacipran or duloxetine is disclosed, which has a significantly high therapeutic effect as compared with conventional antidepressants. The therapeutic method using a cholinesterase inhibitor in combination with a selective serotonin reuptake inhibitor, milnacipran or duloxetine is beneficial for the treatment of depression, in particular, refractory depression.

摘要翻译： 公开了一种胆碱酯酶抑制剂与选择性5-羟色胺再摄取抑制剂米那普仑或度洛西汀组合的新型抗抑郁药组合物，其与常规抗抑郁药相比具有显着高的治疗效果。 使用胆碱酯酶抑制剂与选择性5-羟色胺再摄取抑制剂，米那普仑或度洛西汀组合的治疗方法有利于治疗抑郁症，特别是难治性抑郁症。

公开(公告)号：US07157843B2

公开(公告)日：2007-01-02

申请号：US10979112

申请日：2004-11-03

申请人： Takeo Ito ,  Hajime Tanaka ,  Tomoko Nakazawa ,  Taichiro Nakayama ,  Takaaki Shinohara ,  Yoichiro Nakayama ,  Kazuo Sakai

发明人： Takeo Ito ,  Hajime Tanaka ,  Tomoko Nakazawa ,  Taichiro Nakayama ,  Takaaki Shinohara ,  Yoichiro Nakayama ,  Kazuo Sakai

IPC分类号： H01J29/10 ,  H01J9/00 ,  B32B33/00

CPC分类号： H01J31/123 ,  H01J29/28 ,  H01J2329/28 ,  Y10T428/1476 ,  Y10T428/253 ,  Y10T428/265 ,  Y10T428/31681 ,  Y10T428/31692

摘要： A transfer film comprising a base film (11), a parting-agent layer (12), a protective film (13), and a metal film (14), the latter three being formed on the base film (11) in order, wherein the protective film (13) contains a softening agent such as a phosphate, an aliphatic monobasic acid ester, an aliphatic dibasic acid ester, or a dihydric alcohol ester. By using such a transfer film, a metal back layer is formed. Since the transfer layer of the transfer film has a surface resistivity of as high as 102–108 Ω/, the surface resistivity of the formed metal back layer is high, and discharge is suppressed.

摘要翻译： 一种转印膜，其包含基膜（11），脱模剂层（12），保护膜（13）和金属膜（14），后者三次依次形成在基膜（11）上， 其中，保护膜（13）含有磷酸盐，脂肪族一元酸酯，脂肪族二元酸酯，二元醇酯等软化剂。 通过使用这种转印膜，形成金属背层。 由于转印膜的转印层的表面电阻率高达10〜10 -8Ω，因此形成的金属背层的表面电阻率高， 并且放电被抑制。

公开(公告)号：US20050007034A1

公开(公告)日：2005-01-13

申请号：US10676974

申请日：2003-09-30

申请人： Toshio Kobayashi ,  Tetsuya Matsumoto ,  Tadashi Masuda ,  Hiroyuki Ikoshi ,  Kazuo Sakai ,  Kiyoshi Komatsu ,  Kiyomi Watanabe

发明人： Toshio Kobayashi ,  Tetsuya Matsumoto ,  Tadashi Masuda ,  Hiroyuki Ikoshi ,  Kazuo Sakai ,  Kiyoshi Komatsu ,  Kiyomi Watanabe

IPC分类号： H02M3/28 ,  H02M7/06 ,  H05B37/02

CPC分类号： H02M3/28 ,  H02M7/06

摘要： This discharge power supply apparatus is for supplying a D. C. voltage to a discharge load 6 and discharging the same. The discharge power supply apparatus includes an inverter circuit 2 that converts D. C. voltage to A. C. voltage; a transformer 3 having a primary winding 3a to which the A. C. voltage output by the inverter circuit 2 is supplied and a secondary winding 3b; a full-wave rectifier circuit 4 that has a plurality of diodes 4A to 4D and rectifies the A. C. voltage generated by the secondary winding 3b; and a trigger capacitor 7 connected in parallel to a part of the diodes of the full-wave rectifier circuit 4.

摘要翻译： 该放电电源装置用于向放电负载6提供D.C电压并对其放电。 放电电源装置包括将C.C.电压转换成A.C电压的反相电路2。 变压器3，其具有供给由逆变器电路2输出的A.C电压的初级绕组3a和次级绕组3b; 全波整流电路4具有多个二极管4A〜4D，对由次级绕组3b产生的A.C电压进行整流; 以及与全波整流电路4的二极管的一部分并联连接的触发电容器7。