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32 条记录 (耗时 0.022 秒)

    Semiconductor optical devices and optical modules
    5.
    发明授权
    Semiconductor optical devices and optical modules 有权
    半导体光学器件和光学模块

    公开(公告)号：US07038233B2

    公开(公告)日：2006-05-02

    申请号：US10782897

    申请日：2004-02-23

    申请人： Tomonobu Tsuchiya ,  Tsukuru Ohtoshi

    发明人： Tomonobu Tsuchiya ,  Tsukuru Ohtoshi

    IPC分类号： H01L29/06 ,  H01L31/328 ,  H01L31/336 ,  H01L31/72 ,  H01L31/109

    CPC分类号： B82Y20/00 ,  H01S5/02208 ,  H01S5/02284 ,  H01S5/0683 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34366

    摘要： An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A semiconductor optical device and an optical module including a package substrate and a semiconductor optical device mounted on the package substrate are provided, whereby there are realized the improvement of device properties and the long-term reliability through the use of an Al composition ratio-reduced tensile strained quantum well layer.

    摘要翻译： 预期基于InGaAlAs的掩埋式激光器可以改善器件的性能，但是由于在有源层中包含Al，所以在再生长界面处产生缺陷，难以实现光通信所需的长期可靠性。 提供了一种半导体光学器件和包括安装在封装衬底上的封装衬底和半导体光学器件的光学模块，由此通过使用Al组成比降低来实现器件性能和长期可靠性的提高 拉伸应变量子阱层。

    Burying type avalanche photodiode and fabrication method thereof
    8.
    发明授权
    Burying type avalanche photodiode and fabrication method thereof 有权
    埋地型雪崩光电二极管及其制造方法

    公开(公告)号：US06635908B2

    公开(公告)日：2003-10-21

    申请号：US09942737

    申请日：2001-08-31

    申请人： Shigehisa Tanaka ,  Yasunobu Matsuoka ,  Kazuhiro Ito ,  Tomohiro Ohno ,  Sumiko Fujisaki ,  Akira Taike ,  Tsukuru Ohtoshi ,  Shinji Tsuji

    发明人： Shigehisa Tanaka ,  Yasunobu Matsuoka ,  Kazuhiro Ito ,  Tomohiro Ohno ,  Sumiko Fujisaki ,  Akira Taike ,  Tsukuru Ohtoshi ,  Shinji Tsuji

    IPC分类号： H01L310328

    CPC分类号： H01L31/1075 ,  H01L31/02161 ,  H01L31/035281 ,  Y02E10/50

    摘要： The object of disclosing the novel art consists in providing a highly reliable mesa-structured avalanche photo-diode using a novel structure capable of keeping the dark current low, and a fabrication method thereof. The avalanche photo-diode for achieving the object has an absorption layer for absorbing light to generate a carrier, a multiplication layer for multiplying the generated carrier, and a field control layer inserted between the absorption layer and the multiplication layer. Moreover, a first mesa including at least part of the multiplication layer and part of the field control layer is formed over a substrate, a second mesa including another part of the field control layer and the absorption layer is formed over the first mesa, the area of the top surface of the first mesa is greater than that of the bottom surface of the second mesa, and a semiconductor layer is formed over the part of the first mesa top surface not covered by the second mesa and the side surface of the second mesa.

    摘要翻译： 公开新技术的目的在于提供一种使用能够保持暗电流低的新型结构的高度可靠的台面结构的雪崩光电二极管及其制造方法。 用于实现物体的雪崩光电二极管具有用于吸收光以产生载流子的吸收层，用于乘以所生成的载流子的乘法层和插入在吸收层和乘法层之间的场控制层。此外，第一台面 包括倍增层的至少一部分和场控制层的一部分形成在衬底上，包括场控制层的另一部分的第二台面和吸收层形成在第一台面上，顶表面的面积 第一台面大于第二台面的底面的第一台面，并且半导体层形成在第一台面顶面的未被第二台面和第二台面的侧面覆盖的部分上。

    Semiconductor laser device
    9.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4563764A

    公开(公告)日：1986-01-07

    申请号：US531710

    申请日：1983-09-13

    申请人： Takao Kuroda ,  Takashi Kajimura ,  Yasutoshi Kashiwada ,  Naoki Chinone ,  Hirobumi Ouchi ,  Tsukuru Ohtoshi

    发明人： Takao Kuroda ,  Takashi Kajimura ,  Yasutoshi Kashiwada ,  Naoki Chinone ,  Hirobumi Ouchi ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2232 ,  H01S5/2234

    摘要： Disclosed is a semiconductor laser device having at least an optical confinement region which includes a first semiconductor layer, and second and third semiconductor layers holding the first semiconductor layer therebetween and having a greater band gap and a lower refractive index than those of the first semiconductor layer, the second and third semiconductor layers having conductivity types opposite to each other; characterized in that the relationship between a donor density (N.sub.D .times.10.sup.17 cm.sup.-3) of the n-conductivity type semiconductor layer in the second and third semiconductor layers and a proportion (.GAMMA..sub.n %) of an optical output existing in the n-conductivity type semiconductor layer relative to a total optical output of the laser is set at N.sub.D .times..GAMMA..sub.n .gtoreq.500. Noise characteristics are sharply improved.

    摘要翻译： 公开了一种半导体激光器件，其至少具有包含第一半导体层的光限制区域，以及将第一半导体层保持在其间并且具有比第一半导体层的更大的带隙和更低的折射率的第二和第三半导体层 所述第二和第三半导体层具有彼此相反的导电类型; 其特征在于，第二和第三半导体层中的n导电型半导体层的供体密度（ND×107cm-3）与存在于n导电型半导体中的光输出的比例（GAMMA n％）之间的关系 相对于激光的总光输出的层设置为NDx GAMMA n> = 500。 噪声特性大幅提高。

    Organic luminescent display device
    10.
    发明授权
    Organic luminescent display device 失效
    有机发光显示装置

    公开(公告)号：US08390549B2

    公开(公告)日：2013-03-05

    申请号：US12647025

    申请日：2009-12-24

    申请人： Shingo Ishihara ,  Tsukuru Ohtoshi

    发明人： Shingo Ishihara ,  Tsukuru Ohtoshi

    IPC分类号： G09G3/32

    CPC分类号： H01L51/5265 ,  H01L27/3211 ,  H01L51/5096 ,  H01L51/5275

    摘要： Organic luminescent elements forming an R sub-pixel, a G sub-pixel, and a B sub-pixel are formed of lower electrodes (3, 4, and 5), hole-transporting layers (7, 8, and 11), luminescent layers (9, 12, and 14), electron-transporting layers (10, 13, and 15), and an upper electrode (16), and each of the organic luminescent elements optimizes an optical interference condition. A dielectric alternate laminated film (17) is formed on the upper electrode (16), and forms a micro-resonator with each of the lower electrodes. The micro-resonator structure raises the directivity of a radiation pattern, and improves the light extraction efficiency of each of the organic luminescent elements. A narrow radiation pattern is alleviated by a view angle-controlling layer (19) formed on the dielectric alternate laminated film (17) so as to broaden until a perfectly diffusing surface radiation pattern. Consequently, the light extraction efficiency can be improved in an organic luminescent display device.

    摘要翻译： 形成R子像素，G子像素和B子像素的有机发光元件由下电极（3,4和5），空穴传输层（7,8和11）形成，发光 层（9,12和14），电子传输层（10,13和15）和上电极（16），并且每个有机发光元件优化光学干涉条件。 在上电极（16）上形成介质交替叠层膜（17），并且与每个下电极形成微谐振器。 微谐振器结构提高了辐射图案的方向性，并且提高了每个有机发光元件的光提取效率。 通过形成在电介质交替叠层膜（17）上的视角控制层（19）来减轻窄辐射图，以便扩展直到完全扩散的表面辐射图。 因此，可以在有机发光显示装置中提高光提取效率。