公开(公告)号：US5770511A

公开(公告)日：1998-06-23

申请号：US729870

申请日：1996-10-15

申请人： Kei Matsumoto ,  Hirotaka Kato ,  Hiroshi Furukawa

发明人： Kei Matsumoto ,  Hirotaka Kato ,  Hiroshi Furukawa

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/76

CPC分类号： H01L21/2007

摘要： The present invention, a silicon-on-insulator (SOI) substrate and its fabrication method, is suited to the wafer-bonding method. A pre-oxidation treatment accompanying the oxidation treatment and the adhesive thermal treatment to prevent metal impurities from polluting semiconductor wafers. Before an oxide layer is thermally grown on one wafer or after two bonded wafers are subjected to a adhesive thermal treatment at a temperature T1, the pre-oxidation treatment is performed at a temperature of T2, which satisfies the relation equation of T1-300.ltoreq.T2.ltoreq.T1-100 (.degree.C.). Water steam, pure oxygen, or diluted oxygen, is conducted into the furnace, in which the pre-oxidation treatment is performed in an oxidation ambient. Accordingly, an oxide film having a predetermined thickness is formed on the surface of the SOI substrate serving as a barrier for preventing metal impurities, such as Fe, Cr, or the like, from invading the substrate and degrading the electrical characteristics thereof.

摘要翻译： 本发明的绝缘体上硅（SOI）衬底及其制造方法适用于晶片接合方法。 伴随氧化处理和粘合剂热处理的预氧化处理以防止金属杂质污染半导体晶片。 在氧化物层在一个晶片上热生长之前，或者在两个接合的晶片在温度T1进行粘合剂热处理之后，在T2的温度下进行预氧化处理，该温度满足关系式T1-300 < / = T2

公开(公告)号：US5742175A

公开(公告)日：1998-04-21

申请号：US603081

申请日：1996-02-20

申请人： Hirotaka Kato ,  Kei Matsumoto

发明人： Hirotaka Kato ,  Kei Matsumoto

IPC分类号： G01N21/00 ,  C30B29/06 ,  G01N27/00 ,  G01R31/26 ,  G01R31/265 ,  G01R31/28 ,  H01L21/66

CPC分类号： G01R31/2656 ,  G01R31/2648 ,  G01R31/265 ,  G01R31/2831 ,  H01L22/12

摘要： An evaluation method to efficiently and precisely measure high-density oxygen-precipitation defects in the bulk of a silicon wafer is disclosed. A number of silicon wafers containing oxygen-precipitation defects are provided. The SPV method is utilized to measure the diffusion length of the minority carriers in the silicon wafers. The density of oxygen-precipitation defects is measured by the infrared tomography method. The diffusion length and the defect density are plotted and are found to be correlated. That is, the SPV measured diffusion length of the minority carriers and the defect density obtained by the infrared tomography method have specific relationships. A constant A can then be obtained from the plot. The diffusion length L of minority carriers in silicon wafers provided for evaluation is measured by the SPV method. Finally, the bulk oxygen-precipitation defects density can be calculated from the formula A.times.L.sup.-2. The present invention can precisely obtain the defect density in very short time. Moreover, the bulk density can be obtained since the silicon wafers need not be broken.

摘要翻译： 公开了一种用于有效和精确地测量硅晶片本体中的高密度氧沉淀缺陷的评估方法。 提供了含有氧沉淀缺陷的多个硅晶片。 SPV方法用于测量硅晶片中少数载流子的扩散长度。 氧沉淀缺陷的密度通过红外层析成像方法测定。 绘制扩散长度和缺陷密度，并发现其相关。 也就是说，SPV测量的少数载流子的扩散长度和通过红外层析成像方法获得的缺陷密度具有特定的关系。 然后可以从曲线获得常数A. 用于评估的硅晶片中的少数载流子的扩散长度L通过SPV法测量。 最后，体积氧沉淀缺陷密度可以从公式AxL-2计算。 本发明可以在非常短的时间内精确地获得缺陷密度。 此外，可以获得体积密度，因为硅晶片不需要断裂。

公开(公告)号：US5849603A

公开(公告)日：1998-12-15

申请号：US626852

申请日：1996-04-02

申请人： Hirotaka Kato ,  Yuji Sato ,  Kei Matsumoto

发明人： Hirotaka Kato ,  Yuji Sato ,  Kei Matsumoto

IPC分类号： G01N27/60 ,  G01N1/28 ,  G01N21/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/66 ,  H01L21/302

CPC分类号： H01L21/31111 ,  H01L21/02052 ,  H01L22/20 ,  H01L22/12 ,  Y10S438/974

摘要： A surface processing method for evaluating semiconductor substrate is intended to clean a semiconductor substrate, which has the surface of a silicon layer exposed by removing the epitaxial layer by an acid mixture, by buffered HF and then to perform SC-1 cleaning. Placing the substrate for about 2 hours after the processing, then the varying rate of the SPV value is quite stable at about 5%, so that the minor carrier diffusion length can be measured with high precision. Furthermore, the lead time of evaluating a semiconductor substrate can be significantly reduced over the prior-art method.

摘要翻译： 用于评估半导体衬底的表面处理方法旨在通过缓冲的HF清洁具有通过酸混合物除去外延层而暴露的硅层的表面的半导体衬底，然后执行SC-1清洁。 在处理之后放置基板约2小时，则SPV值的变化率在约5％时相当稳定，从而可以高精度地测量较小的载流子扩散长度。 此外，与现有技术方法相比，可以显着降低半导体衬底的评估的提前时间。

公开(公告)号：US5742176A

公开(公告)日：1998-04-21

申请号：US603083

申请日：1996-02-20

申请人： Hirotaka Kato ,  Kei Matsumoto

发明人： Hirotaka Kato ,  Kei Matsumoto

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： G01R31/2648 ,  H01L22/12

摘要： An evaluation method of a silicon wafer by correctly calculating the Fe--B concentration is disclosed. Even when the SPV method is utilized, the over-estimated Fe--B concentration in silicon wafers containing oxygen-precipitation defects can be avoided. Diffusion lengths Lb and La of minority carriers in a P-type silicon wafer before and after an activation step are measured by the SPV method. A value of (Lb--La)/Lb calculated from La and Lb is compared with a constant C which is read from the plot of Lb vs. (Lb--La). If (Lb--La)/Lb is smaller than constant C, the concentration calculation is terminated since there are oxygen-precipitation defects in the silicon wafer. The calculation is carried out for silicon wafers containing no oxygen-precipitation defects, and is based on the formula of Fe--B concentration (cm.sup.-3).apprxeq.1.times.10.sup.16 (La.sup.-2 --Lb.sup.-2). Therefore, the Fe--B concentration can be precisely determined even though the silicon wafers in which a high-density of oxygen-precipitation defects exist are mixed together with silicon rods.

摘要翻译： 公开了通过正确计算Fe-B浓度的硅晶片的评价方法。 即使采用SPV法，也可以避免含硅析出缺陷的硅晶片中过度估计的Fe-B浓度。 通过SPV法测定活化步骤之前和之后的P型硅晶片中的少数载流子的扩散长度Lb和La。 将从La和Lb计算的（Lb-La）/ Lb的值与从Lb对（Lb-La）的图中读出的常数C进行比较。 如果（Lb-La）/ Lb小于常数C，则由于在硅晶片中存在氧析出缺陷，因此终止浓度计算。 对不含氧沉淀缺陷的硅晶片进行计算，基于Fe-B浓度（cm-3）APPROX 1×1016（La-2-Lb-2）的配方。 因此，即使存在高密度氧沉淀缺陷的硅晶片与硅棒一起混合，也可以精确地确定Fe-B浓度。

公开(公告)号：US5897743A

公开(公告)日：1999-04-27

申请号：US786767

申请日：1997-01-21

申请人： Kazuaki Fujimoto ,  Hiroshi Furukawa ,  Hirotaka Kato

发明人： Kazuaki Fujimoto ,  Hiroshi Furukawa ,  Hirotaka Kato

IPC分类号： C30B35/00 ,  B26D3/28 ,  B29C63/00 ,  B32B43/00 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02 ,  H01L21/30 ,  H01L21/304 ,  H01L21/58 ,  H01L27/12 ,  B32B35/00

CPC分类号： B32B43/006 ,  B26D3/282 ,  B29C63/0013 ,  Y10S156/941 ,  Y10T156/11 ,  Y10T156/1179 ,  Y10T156/19 ,  Y10T29/49822 ,  Y10T29/53683

摘要： A peeling jig is provided for peeling a bonded wafer having voids formed in bonding surfaces so as to rebond, which does not injure the bonding surfaces or cause the adherence of particles thereto. The peeling jig includes a wedge portion 1a for inserting into the bonding surfaces, and a flat portion provided at the both sides of the base of the wedge portion. The apex angle of the wedge portion, when the chamfered angles at the bonding sides of the supporting substrate and active wafer of the bonded wafer to be separated are respectively .alpha. and .beta., is .theta. and .theta.>.alpha.+.beta.. When the wedge portion is inserted into the bonding surfaces, the right and left inclined surfaces of the wedge portion are in contact with the peripheries of the chamfered portions, and then chamfered portions are flared. Accordingly, the bonded wafer is separated by the wedge portion into the supporting substrate and the active wafer without being contacted with the bonding surfaces until the flat portions are in contact with the periphery of the bonded wafer.

摘要翻译： 提供一种剥离夹具，用于剥离在接合表面形成的具有空隙的接合晶片，以便重新粘结，这不会损伤接合表面或引起颗粒附着。 剥离夹具包括用于插入接合表面的楔形部分1a和设置在楔形部分的基部两侧的平坦部分。 当待分离的接合晶片的支撑衬底和有源晶片的接合侧的倒角角度分别为α和β时，楔形部分的顶角为θ和θ>α+β。 当楔形部分插入接合表面时，楔形部分的左右倾斜表面与倒角部分的周边接触，然后倒角部分被展开。 因此，接合晶片被楔形部分分离成支撑衬底和活性晶片，而不与接合表面接触，直到平坦部分与接合晶片的周边接触。

公开(公告)号：US5932048A

公开(公告)日：1999-08-03

申请号：US882348

申请日：1997-06-25

申请人： Hiroshi Furukawa ,  Hirotaka Kato ,  Hiroaki Yamamoto ,  Kazuaki Fujimoto

发明人： Hiroshi Furukawa ,  Hirotaka Kato ,  Hiroaki Yamamoto ,  Kazuaki Fujimoto

IPC分类号： H01L21/18 ,  H01L21/324 ,  H01L21/304

CPC分类号： H01L21/187 ,  Y10S148/003 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/159 ,  Y10S438/906 ,  Y10S438/959 ,  Y10S438/964 ,  Y10S438/967 ,  Y10S438/974 ,  Y10S438/977

摘要： A method of direct-bonding semiconductor wafers limits the time interval between a bonding step and a bonding anneal step or performs a baking step between the bonding and bonding anneal steps at a predetermined temperature for a predetermined time interval to prevent the formulation of voids on the edge regions of the wafers. The method for fabricating laminated semiconductor wafers includes a bonding step to fit together two polished semiconductor wafers by bonding jigs, and a succeeding bonding anneal step to laminate the wafers. In the method the bonding anneal step is preferably carried out within an hour following the bonding step; or a baking step at a predetermined temperature for a predetermined time interval is carried out between the bonding step and the bonding anneal step. Further, the method can prevent heavy metal impurities attached to the surface of the wafer from diffusing into the wafer by baking the wafer for over 5 minutes at above 100.degree. C. in the period between the bonding step and the annealing step.

摘要翻译： 直接接合半导体晶片的方法限制了接合步骤和接合退火步骤之间的时间间隔，或者在预定温度下在预定时间间隔内在接合和接合退火步骤之间进行烘烤步骤，以防止在 晶圆的边缘区域。 用于制造叠层半导体晶片的方法包括通过粘合夹具将两个抛光的半导体晶片配合在一起的接合步骤，以及随后的结合退火步骤以层压晶片。 在该方法中，接合退火步骤优选在接合步骤后一小时内进行; 或者在接合步骤和接合退火步骤之间进行在预定温度下预定时间间隔的烘烤步骤。 此外，该方法可以在粘合步骤和退火步骤之间的时间段内，通过在100℃以上烘烤晶片超过5分钟来防止附着在晶片表面的重金属杂质扩散到晶片中。

公开(公告)号：US20060120828A1

公开(公告)日：2006-06-08

申请号：US11234229

申请日：2005-09-26

申请人： Hirotaka Kato

发明人： Hirotaka Kato

IPC分类号： B42B9/00

CPC分类号： B42D3/002

摘要： To provide a book binding kit easy for a user to fabricate an original book, it includes one set composed of a paper having a printing surface and an adhesive surface to which a release paper having a cut line to form a cover member is attached, a front cover paperboard to be attached to a front cover region of the adhesive surface, a backbone paperboard to be attached to a backbone region of the adhesive surface, a back cover paperboard to be attached to a back cover region of the adhesive surface, and a body of pages made of a plurality of sheets bound together at one end. The release paper is divided into a front cover release paper, a front cover groove release paper, a backbone release paper, a back cover groove release paper, a back cover release paper, and a flap release paper.

摘要翻译： 为了提供易于使用者制作原始书籍的书本装订工具，它包括由具有打印表面和粘合表面的纸组成的一组，其中附着有具有切割线以形成盖构件的剥离纸， 要粘附到粘合剂表面的前盖区域上的前盖纸板，附着到粘合剂表面的主干区域的主干纸板，附着到粘合剂表面的后盖区域的后盖纸板，以及 在一端结合在一起的多个纸张制成的页面主体。 剥离纸分为前盖释放纸，前盖槽释放纸，主干剥离纸，后盖槽释放纸，后盖释放纸和挡片剥离纸。

公开(公告)号：US08888913B2

公开(公告)日：2014-11-18

申请号：US13206310

申请日：2011-08-09

申请人： Kazuhiro Narahara ,  Hirotaka Kato ,  Koichiro Hayashida

发明人： Kazuhiro Narahara ,  Hirotaka Kato ,  Koichiro Hayashida

IPC分类号： C30B21/02 ,  C30B23/06 ,  C23C16/458 ,  C30B25/12 ,  C23C16/24

CPC分类号： C23C16/24 ,  C23C16/4585 ,  C23C16/4586 ,  C30B23/063 ,  C30B25/12 ,  H01L21/68735

摘要： A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

摘要翻译： 提供了形成外延层以提高外延硅晶片的平坦度的方法。 特别地，提供了控制晶片周边部分中的外延层厚度的方法。 一种用于通过在反应炉中生长具有半导体晶片和源气体的反应的外延层来制造外延晶片的装置，包括：放置半导体晶片的凹槽; 固定半导体的基座; 取决于半导体晶片的晶体取向和/或独立于半导体晶片的晶体取向的取向非依赖性控制装置的取向依赖控制装置，其中该装置可以改善外延层的外围部分的平坦度。

公开(公告)号：US08021484B2

公开(公告)日：2011-09-20

申请号：US11731815

申请日：2007-03-30

申请人： Kazuhiro Narahara ,  Hirotaka Kato ,  Koichiro Hayashida

发明人： Kazuhiro Narahara ,  Hirotaka Kato ,  Koichiro Hayashida

IPC分类号： C30B21/06

CPC分类号： C23C16/24 ,  C23C16/4585 ,  C23C16/4586 ,  C30B23/063 ,  C30B25/12 ,  H01L21/68735

摘要： A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

摘要翻译： 提供了形成外延层以提高外延硅晶片的平坦度的方法。 特别地，提供了控制晶片周边部分中的外延层厚度的方法。 一种用于通过在反应炉中生长具有半导体晶片和源气体的反应的外延层来制造外延晶片的装置，包括：放置半导体晶片的凹槽; 固定半导体的基座; 取决于半导体晶片的晶体取向和/或独立于半导体晶片的晶体取向的取向非依赖性控制装置的取向依赖控制装置，其中该装置可以改善外延层的外围部分的平坦度。

公开(公告)号：US06250462B1

公开(公告)日：2001-06-26

申请号：US09434933

申请日：1999-11-05

申请人： Hirotaka Kato

发明人： Hirotaka Kato

IPC分类号： B65D8557

CPC分类号： B42D3/12 ,  B42D1/00 ,  G11B33/0422 ,  G11B33/0494

摘要： Disclosed is a book-like disc casing which comprises a series of a front cover, a spine and a rear cover, made of cardboard, and a plurality of pieces of paper, the front cover, spine and rear cover being folded to be like a book with the pieces of paper interleaved between the front cover and the rear cover. At least one of the front and rear covers has an intermediate member and a lining member laid on each other to form a lamination inside. The intermediate member has a disc accommodating space formed therein, and the lining member has a line of perforations and creases intercepting the line of perforations, which is partly in conformity with the disc accommodating space, thereby facilitating the making of an opening in the lining member to permit the taking-out of the disc from the disc accommodating space.

摘要翻译： 公开了一种书本的盘壳，其包括由纸板制成的一系列前盖，脊柱和后盖，以及多张纸，前盖，脊柱和后盖被折叠成为 与在前盖和后盖之间交错的纸张预订。 前盖和后盖中的至少一个具有彼此叠置以在内部形成层压件的中间构件和衬里构件。 中间构件具有形成在其中的盘容纳空间，并且衬里构件具有一线的穿孔和折痕，其拦截穿孔线，其部分地与盘容纳空间一致，从而有助于在衬里构件中形成开口 以允许从盘容纳空间取出盘。